• 한국전기전자재료학회논문지
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• 제33권1호
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• pp.25-30
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• 2020

Oxide (SiO₂)/Metal(Ag)/Oxide(SiO₂, ITO, ZnO) multilayer films were fabricated using a magnetron sputtering technique at room temperature on Si (p-type, 100) and a glass substrate. The electrical and optical properties of the asymmetric multilayer films depended on the thickness of the mid-layer film and the type of oxide in the bottom layer. As the metal layer becomes thicker, the sheet resistance decreases. However, the transmittance decreases when the metal layer exceeds a threshold thickness of approximately 10~12 nm. In addition, the sheet resistance and transmittance change according to the type of oxide in the bottom layer. If the oxide has a large resistivity, the overall sheet resistance increases. In addition, the anti-reflection effect changes according to the refractive index of the oxide material. The optical and electrical properties of multilayer films were investigated using an ultraviolet visible (UV-Vis) spectrophotometer and a 4-point probe, respectively. The optimum structure is SiO₂ (30 nm)/Ag (10 nm)/ZnO (30 nm) multilayer, with the highest FOM value of 7.7×10^-3 Ω^-1.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.313-314
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• 2007

Ga-doped ZnO(GZO) multilayer coatings were prepared on glass by DC sputtering. Optimization of the deposition conditions of both AZO and Au layers were performed for better electrical and optical characteristics. The properties of multilayer were affected by the deposition process of both GZO and Au layers. The best multilayer coating exhibits low resistivity of $2.72{\times}10^{-3}\;{\Omega}-cm$ and transmittance of 77%. From these results, we can confirm a possibility of the application as transparent conductive electrodes.

• 대한기계학회논문집A
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• 제26권6호
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• pp.1001-1007
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• 2002

To improve the performance of the PZT thin flms, each PZT and PT layer was alternately deposited on a Pt/Ti/Si$_3$N$_4$/SiO$_2$/Si substrate by a modified sol-gel solid precursor technique. For comparison, PZT thin films were also prepared with an identical method under the same conditions. XRD measurement revealed that the diffraction pattern of the multilayer film was due to the superimposition of the PZT and PT patterns. At 1㎑, a dielectric constant of 389 and 558, a dielectric loss of 1.2% and 1.1% were obtained for the PZT/PT and PZT thin films, respectively. If we consider the PT dielectric constant to be 260, it is clear that the dielectric constant of alternately deposited PZT/PT thin films was well adjusted. The PZT/PT thin film showed a low dielectric constant and a similar dielectric loss compared with those of the PZT film. The figures of merit on detectivity for the PZT/PT and PZT thin films were 20.3$\times$10$\^$-6/㎩$\^$-$\sfrac{1}{2}$/, and 18.7$\times$10$\^$-6/㎩$\^$-$\sfrac{1}{2}$/, and the figures of merit on voltage response were 0.038㎡/C and 0.028 ㎡/C, respectively. The high figures of merit for the PZT/PT film were ascribed to its relatively low dielectric constant when compared to the PZT thin films.

• 반도체디스플레이기술학회지
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• 제16권2호
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• pp.27-31
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• 2017

AZO/Ag/AZO multi-layer films deposited on glass substrate by RF magnetron sputtering and thermal evaporator have a much better electrical properties than Al-doped ZnO thin films. The multi-layer structure consisted of three layers, AZO/Ag/AZO, the electrical and optical properties of AZO/Ag/AZO were changed mainly by thickness of Ag layers. The optimum thickness of Ag layers was determined to be $90{\AA}$ for high optical transmittance and good electrical conductivity. The Ag layers thickness $90{\AA}$ is an optical transmittance greater than 80% of visible light and the obtained multilayer thin film with the low resistivity of $8.05{\times}10-3{\Omega}cm$ and the low sheet resistance $5.331{\Omega}/sq$. Applying to TCO and Solar electrode will improve efficiency.

• 열처리공학회지
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• 제22권3호
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• pp.143-148
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• 2009

We have fabricated Ti metal films on Cu wire substrates by using a RF magnetron sputtering method at different RF powers (0, 30 and 60 W) in a high vacuum, and we have investigated the thin film characteristics and resistivity. The ion bombardment effect is increased by the method to superimpose RF power to DC power applied to two poles of the base; thus, the thin film is deposited at sputtering gas pressures below 1 Pa. Moreover, the thin film formation of the multilayer structure becomes possible by gradually injecting the RF power, and the thin film quality is improved.

• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.309-309
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• 2006

Latest developments on hybrid nanostructured materials fabricated by applying self-assembly strategies on organic/inorganic nanotemplates are discussed. Within this frame, numerous functional nanomaterials including arrays of composite metal/semiconductor nanoparticles, planar waveguides and functional multilayer thin films are generated using self-assembled polymers as templates or building blocks. In particular, surface plasmon resonance based optical sensing is employed to investigate nanofabrication processes occurring in nanoscale dimention. We also suggest unprecedented pathways to hybrid supramolecular multilayer nanoarchitectures in 1D or 2D geometry via layer-by-layer self-assembly.

• 반도체디스플레이기술학회지
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• 제16권4호
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• pp.1-4
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• 2017

Encapsulation of organic based devices is essential issue due to easy deterioration of organic material by water vapor. Atomic layer deposition (ALD) is a promising solution because of its low temperature deposition and quality of the deposited film. Moisture permeation has a mechanism to pass through defects, Thin Film Encapsulation using inorganic / organic / inorganic hybrid film has been used as promising technology. $Al_2O_3$ / Polymer / $Al_2O_3$ multilayer film has shown excellent environmental protection characteristics despite of thin thicknesses of the films.

• 한국광학회지
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• 제15권4호
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• pp.361-368
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• 2004

콤팩트디스크(CD-R; Compact DiskRecordable)를 성분별로 분리하여 제작하고, 다층 박막 구조를 만들어서 레이저빔의 에너지를 변화시켜 가면서 조사하여 각 성분 층에서의 최적 미소 점 마킹 조건과 홈 형성 과정에 관하여 연구하였다. 본 연구는 Q-스위치 Nd:YAG 레이저를 이용하여 준비된 각 시료의 표면에 27∼373 mJ 빔을 80 $\mu\textrm{m}$의 점적 크기로 조사하여 샘플에 형성된 흠 형태를 광학현미경(OM; Optical Microscope)과 광 결맞음 단층촬영기(OCT; Optical Coherence Tomography)로 비교-관찰하여 미소 점 마킹의 형성 과정을 분석하였다. 다층 박막에서 용융된 기판 층은 짧은 시간동안 충분한 열 흐름이 발생하여 증배의 형성을 야기하며, 반사 층과 염료 층 사이에 흡수된 에너지는 염료를 용융시키고 체적을 증가시켰으며, 증배가 식으면서 표면장력의 영향 및 레이저빔에 의한 순간적인 시편의 온도상승으로 기화와 반동압력에 의한 질량흐름 때문에 두 층의 경계면에서 홈과 외륜의 발생을 설명할 수 있었다. 따라서 다층 박막에서의 미소 점 마킹의 형성 과정은 표면장력, 용융 점성력, 층 두께, 다층 박막 성분 물질의 물리화학적ㆍ광학적 성질과 관계가 있음을 알 수 있었다.

• 센서학회지
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• 제24권4호
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• pp.219-223
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• 2015

Indium free consisting of three alternating layers GTO/Ag/GTO has been fabricated by radio-frequency (RF) sputtering for the applications as transparent conducting electrodes and the structural, electrical and optical properties of the gallium tin oxide (GTO) films were carefully studied. The gallium tin oxide thin films deposited at room temperature are found to have an amorphous structure. Hall Effect measurements show a strong influence on the conductivity type where it changed from n-type to p-type at $700^{\circ}C$. GTO/Ag/GTO multilayer structured electrode with a few nm of Ag layer embedded is fabricated and show the optical transmittance of 86.48% in the visible range (${\lambda}$ = 380~770 nm) and quite low electrical resistivity of ${\sim}10^{-5}{\Omega}cm$. The resultant power conversion efficiency of 2.60% of the multilayer based OPV (GAG) is lower than that of the reference commercial ITO. GTO/Ag/GTO multilayer is a promising transparent conducting electrode material due to its low resistivity, high transmittance, low temperature deposition and low cost components.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 D
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• pp.2209-2210
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• 2006

In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coaled on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at $650^{\circ}C$ showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field wore 16.48 ${\mu}C/cm^2$ and 35.48kV/cm, respectively.