• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.329-329
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• 2010

적층 액츄에이터는 우수한 압전특성 및 그 재료가 가진 고유한 특성 때문에 최근 이동통신 단말기용 햅틱 소자 및 PC 와 그 주변기기로 수요가 폭발적으로 증대되고 있으며, 향후에도 CATV 네트워크와 무선통신기기를 비롯한 디지털 통신분야로 응용분야가 확대되리라 예상된다. 적층 액츄에이터에서 발생되는 에너지는 세라믹 그린시트 두께와 전극 면적에 비례하여 변위 및 응력이 증가하게 되므로 고적층형에 대한 필요성이 증대되고 있다. 이러한 고적층 액츄에이터의 경우 소성과정에 서 warpage 및 de-lamination 같은 결함이 발생하기 쉬우므로 그린시트의 균일성 및 전극과의 matching성 확보가 중요한 요소이다. 본 연구에서는 슬러리의 분산성과 시트 내 유기물 함량 최적화 실험을 진행하여 적층 액츄에이터용 그린시트를 최적화 한 후 공정 적용성 및 저온소성 전극인 Ag-Pd 전극과의 매칭성을 확보하고자 하였다. 이러한 후막공정 기술 개선을 통해 적층 액츄에이터를 제조하여 압전 특성을 측정하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.443-443
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• 2008

본 연구에서는 Ga-doped ZnO(GZO)-Ag-GZO 다층 투명전극을 Dual DC magnetron sputtering system을 이용 하여 유리기판 위에 상온에서 제작하여 Ag 두께에 따른 전기적, 광학적, 구조적 특성변화를 조사하였다. Hall effect measurement와 UV/Vis spectrometer로 전기적, 광학적 특성을 분석하였으며, X-ray diffraction(XRD)와FE-SEM분석을 통해 결정성과 표면 특성을 조사하였다. FE-SEM 분석결과 island 형태에서 continuous layer로 박막의 형상이 바뀌면서 다층 투명전극의 전기적, 광학적 특성에 영향을 미치는 것을 알 수 있었다. 본 실험에서 Ag 두께 12 nm에서 가장 최적화되어 유리기판위에 상온에서 증착되었음에도 불구하고 $5.5{\times}{\times}10^{-5}\Omega$-cm, $6\Omega$/sq. 의 매우 낮은 면저항과 비저항을 각각 나타내었고 550 nm 파장에서 87 % 의 높은 광 투과도를 나타내었다. 또한 두께 12 nm의 Ag가 삽입된 다층 투명전극을 polyethylene terephthalate (PET) 기판위에 성막하여 Bending test를 실시하여 0.1% 이하의 매우 낮은 저항변화를 확인함으로써 플렉시블 기반의 디스플레이나 태양전지의 투명 전극으로서의 응용 가능성을 확인하였고 마지막으로 최적화된 다층 투명전극을 유기물태양전지의 애노드에 적용하여 기존 ITO 애노드를 대체할 수 있는 투명전극으로서의 가능성을 제시하였다.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.4
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• pp.9-17
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• 1998

BiNbO$_{4}$ ceramics with 0.07wt% V$_{2}$O$_{5}$ and 0.03wt% CuO (BNC3V7) sintered at 900 .deg. C where it is possible for these to be co-fired with ag electronde. Dielectric constant of 44.3 TCF (Thermal Coefficient of resonance Frequency) of 2 ppm/.deg. C and Qxf value 22,000 GHz can be obtained from BNC3V7. the laminatedchip LC filter is indispensible to the minimaturization of PCS (Personal Communication System) terminals. Therefore, multilayer type BPF has been fabricated by screen-printing with silver electrode after tape casting. The simulated characteristics of the fabricated filters sintered at 900.deg. C werecomparedwith the designed ones. for Band Pass Filter widths was similar that ofdesigned ones. For Low Pass Filter (LPF), insertion loss value of band pass widths (2.4 dB) which is a few higher than that of designed (1dB), but characteristization of band pass widths was similar that of designed ones.s.of designed ones.s.

• Bulletin of the Korean Chemical Society
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• v.23 no.5
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• pp.741-744
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• 2002

Single phase of multicomponent oxide ZrTiO4 film could be prepared through surface sol-gel route simply by coating the mixture of 100 mM zirconium butoxide and titanium butoxide on $Pt/Ti/SiO_2Si(100)$ substrate, following pyro lysis at $450^{\circ}C$, and annealing it at 770 $^{\circ}C.$ The dielectric constant of the film was reduced as the film thickness decreased due to of the interfacial effects caused by layer/electrode and a few voids inside the multilayer. However, the dielectric property was independent of applied dc bias sweeps voltage (-2 to +2 V).The dielectric constant of bulk film, 31.9, estimated using series-connected capacitor model was independent of film thickness and frequency in the measurement range, but theoretical interfacial thickness, ti, was dependent on the frequency. It reached a saturated ti value, $6.9{\AA}$, at high frequency by extraction of some capacitance component formed at low frequency range. The dielectric constant of bulk ZrTiO4 pellet-shaped material was 33.7 and very stable with frequency promising as good applicable devices.

• Journal of the Korean Ceramic Society
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• v.35 no.2
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• pp.123-128
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• 1998

Multilayer ceramic capacitors(MLCC) were prepared by laminating the layer of composition with dif-ferent Curie temperature to improve temperature coefficient in the Pb(Mg1/3Nb2/3)O3-PbTiO3 binary system. Green sheet was formed by tape casting using Pb(Mg1/3Nb2/3)O3-PbTiO3 and PbTiO3 synthesized with solid state reaction of PBO. Nb2O5 MgO and TiO2. Green sheet with electrode of 70Ag-30Pd was laminated under 300 kg/cm2 at 70$^{\circ}C$ and sintered at 1100$^{\circ}C$ for 2hr. Curie temperatues for MLCC with 10 layers of pure PMN and 0.9PMN-0.1PT were lowered to -22$^{\circ}C$ and 36$^{\circ}C$ respectively. MLCC with 7 layers of PMN and 3 layers of 0.9PMN-0.1PT showed nearly zero temperature coefficient of capacitance in the range of -20∼30$^{\circ}C$ and sum of dissipation factor of each layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.124-124
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• 2010

Currently, extreme ultraviolet lithography (EUVL) is being investigated for next generation lithography. EUVL is one of competitive lithographic technologies for sub-22nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance due to the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore, new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.198.2-198.2
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• 2014

We investigated change of the electronic structure, chemical states and elements ratio in graphene film by using photoelectron spectroscopy (PES). The graphene electrode has attracted considerable interest due to its possible applications in flexible organic light emitting diodes (F-OLEDs). However, to use the graphene for OLEDs, sufficient increase of work function is required, that is related with hole injection barrier. Plasma treatment is one of the most widely used method in OLEDs to increase the work function of the anode such as indium tin oxide (ITO). In this work, we used the plasma treatment, which is generated by various gas types such as O2, and Ar to increase the work function of the graphene film. From these results, we discuss the relation among the change of work function, plasma power, plasma treatment time and gas types.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.166.1-166.1
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• 2014

We have controlled the graphene surface in two ways to improve the device performance of optoelectronics based on graphene transparent conductive films. We controlled multilayer graphene (MLG) work function and localized surface plasmon resonance wavelength using a silver nanoparticles formed on graphene surface. Graphene substrates were prepared using a chemical vapor deposition and transfer process. Various size of silver nanoparticles were prepared using a thermal evaporator and post annealing process on graphene surface. Silver nanoparticles were confirmed by using scanning electron microscopy (SEM). Work functions of graphene surface with various sizes of Ag nanoparticles were measured using ultraviolet photoelectron spectroscopy (UPS). The result shows that the work functions of MLG could be controlled from 4.39 eV to 4.55 eV by coating different amounts of silver nanoparticles while minimal changes in the sheet resistance and transmittance. Also the Localized surface plasmon resonance (LSPR) wavelength was investigated according to various sizes of silver nanoparticles. LSPR wavelength was measured using the absorbance spectrum, and we confirmed that the resonance wavelength could be controlled from 396nm to 425nm according to the size of silver nanoparticles on graphene surface. To confirm improvement of the device performance, we fabricated the organic solar cell based on MLG electrode. The results show that the work function and plasmon resonance wavelength could be controlled to improve the performance of optoelectronics device.

• Korean Journal of Materials Research
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• v.13 no.12
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• pp.779-784
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• 2003

Nickel powders were obtained by various preparation methods, and their sintering characteristics were investigated. Nickel powders made by wet chemical process (WCP) had a higher surface area and more narrow size distribution than that of chemical vapor deposition (CVD) method. Nickel-oxide powders by the WCP method were prepared at $200^{\circ}C$ for 3 hr. The oxidation behaviour of nickel-oxide powder is similar with that of the CVD method. Nickel powders made by the WCP method showed a higher shrinkage in the range of $600^{\circ}C$∼$900^{\circ}C$ than that of commercial powder made by the CVD method. The similar results were observed on the surface microstructure of sintered bodies by SEM measurements.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.1
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• pp.39-43
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• 2009

In order to develop piezoelectric inverter module for CCFL driving, Rosen-type multilayer piezoelectric transformer was fabricated. The output power and efficiency of mutilayer piezoelectric transformer according to the variation inner electrode layer were investigated. Mutilayer piezoelectric transformer was fabricated conventional mutilayer ceramic method using PZT base ceramics. Also, piezoelectric inverter module was adopted driving circuit with half-bridge type. The piezoelectric inverter module was set up with input voltage 12.5 V, switching frequency 104.3 KHz. The results showed the value of step-up ratio 100, efficiency 87% at load resistance of $100k{\Omega}$.