• Journal of the Korean Vacuum Society
• /
• v.8 no.3B
• /
• pp.283-289
• /
• 1999

Multilayer thin film reference materials for the sputter depth profiling analysis are used to calibrate the sputter depth scale by measuring the sputtering rate and to optimize the sputtering conditions for the best depth resolution. Surface analysis group of Korea Research Institute of Standards and science (KRISS) have developed various types of multilayer thin films by using an ion beam sputter deposition and in-situ surface analysis system. The chemical states of the thin films reference materials were certified by in-situ XPS and the thicknesses were certified by transmission electron microscopy (TEM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.04a
• /
• pp.249-252
• /
• 1997

Electroluminescence(EL) devices based on organic thin layers have attracted lot of interests because of their possible application as large-area display-emitting display. One of the problems of such devices is lifetime of the cell, where the degradation of the cell is partially due to the crystalliyzation of organic layers. In large part, this problem can be solved by using a multilayer device structure prepared by vapor deposition technique. In this study, blue light-emitting multilayer organic electroluminescence devices were fabricated vsing Poly (9-vinylcarbaEole) (PVK) and 2- (4-tert-butylphenyl)-5-(4$^{#}$-bis-phenyl) 1,3,4-oxadiazole (PBO) as hole trasport and electron transport material, respectively, where trim(8-hyd roxyquinolinate) aluminum (Al $q_3$) was used as a luminescenct material. A cell structure of glass sub- strate/indume-tin-oxide(ITO)/PCK/Al $q_3$/PBD/Mg:In was employed. Blue emission peak at 510nm was observed with this cell structure.e.

• Proceedings of the KIEE Conference
• /
• 1997.07d
• /
• pp.1563-1565
• /
• 1997

Electroluminescence(EL)devices based on organic thin layers have attracted lot of interests because of their possible application as large-area light-emitting display. One of the problems of such devices is lifetime of the cell, where the degradation of the cell is partially due to the crystalliyzation of organic layers. In large part, this problem can be solved by using a multilayer device structure prepared by vapor deposition technique. In this study, blue lightemitting multilayer organic electroluminescence devices were fabricated using Poly (9-vinyl-carbazole) (PVK) and 2-(4'-tert-butylpheny])-5-(4"-bis-phenyl)1,3,4-oxadiazole (PBD) as hole trasport and electron transport material, respectively, where tris(8-hydroxyquinolinate) aluminum (Alq3) was used as a luminescenct material. A cell structure of glass substrate/indume-tin-oxide(ITO)/PVK/$Alq_3$/PBD/Mg:In was employed.

• Journal of Mechanical Science and Technology
• /
• v.20 no.10
• /
• pp.1646-1652
• /
• 2006

A model of mechanical behavior of microcantilever due to intrinsic strain during deposition of MEMS structures is derived. A linear ordinary differential equation is derived for the beam deflection as a function of the thickness of the deposited layer. Closed-form solutions are not possible, but numerical solutions are plotted for various dimensionless ratios of the beam stiffness, the intrinsic strain, and the elastic moduli of the substrate and deposited layer. This model predicts the deflection of the cantilever as a function of the deposited layer thickness and the residual stress distribution during deposition. The usefulness of these equations is that they are indicative of the real time behavior of the structures, i.e. it predicts the deflection of the beam continuously during deposition process.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.20 no.6
• /
• pp.59-69
• /
• 2021

Directed energy deposition (DED) is an additive manufacturing technology involving a focused high-power laser or electron beam propagating over the substrate, resulting in melt pool formation while simultaneously supplying metal powder to the melt pool area to deposit the material. DED is performed to repair and strengthen parts in various applications, as it can be easily integrate local area cladding and cross-material deposition. In this study, we characterize stainless steel 316 L parts fabricated via DED based on various deposition conditions and geometries to widen the application of DED. The deposition characteristics are investigated by varying the laser power and powder feed rate. Multilayer deposition with a laser power of 362 W and a powder feed rate of 6.61 g/min indicate a height closest to the design value while affording high surface quality. The microhardness of the specimen increases from the top to the bottom of the deposited area. Tensile tests of specimens with two different deposition directions indicate that horizontally long specimens with respect to a substrate demonstrate a higher ultimate tensile strength and yield strength than vertically long specimens with lower elongation.

• 한국신재생에너지학회:학술대회논문집
• /
• 2005.06a
• /
• pp.102-108
• /
• 2005

We have developed highly stabilized (p-i-n)-type protocrystalline silicon (pc-Si:H) multilayer solar cells. To achieve a high conversion efficiency, we applied a double-layer p-type amorphous silicon-carbon alloy $(p-a-Si_{1-x}C_x:H)$ structure to the pc-Si:H multilayer solar cells. The less pronounced initial short wavelength quantum efficiency variation as a function of bias voltage proves that the double $(p-a-Si_{1-x}C_x:H)$ layer structure successfully reduces recombination at the p/i interface. It was found that a natural hydrogen treatment involving an etch of the defective undiluted p-a-SiC:H window layer before the hydrogen-diluted p-a-SiC:H buffer layer deposition and an improvement of the order in the window layer. Thus, we achieved a highly stabilized efficiency of $9.0\%$ without any back reflector.

• Journal of Sensor Science and Technology
• /
• v.24 no.4
• /
• pp.219-223
• /
• 2015

Indium free consisting of three alternating layers GTO/Ag/GTO has been fabricated by radio-frequency (RF) sputtering for the applications as transparent conducting electrodes and the structural, electrical and optical properties of the gallium tin oxide (GTO) films were carefully studied. The gallium tin oxide thin films deposited at room temperature are found to have an amorphous structure. Hall Effect measurements show a strong influence on the conductivity type where it changed from n-type to p-type at $700^{\circ}C$. GTO/Ag/GTO multilayer structured electrode with a few nm of Ag layer embedded is fabricated and show the optical transmittance of 86.48% in the visible range (${\lambda}$ = 380~770 nm) and quite low electrical resistivity of ${\sim}10^{-5}{\Omega}cm$. The resultant power conversion efficiency of 2.60% of the multilayer based OPV (GAG) is lower than that of the reference commercial ITO. GTO/Ag/GTO multilayer is a promising transparent conducting electrode material due to its low resistivity, high transmittance, low temperature deposition and low cost components.

• Journal of Industrial Technology
• /
• v.25 no.A
• /
• pp.157-162
• /
• 2005

In this study, the fabrication of PZT films was performed from a multilayer structure comprising $TiO_2$, $ZrO_2$ and PbO thin films prepared by rapid themal chemical vapor deposition(RTMOCVD). $TiO_2$, $ZrO_2$ and PbO are the component layers of oxide multilayer system for a single phase PZT thin film. The composition control of PZT thin film was done by the thickness control of individual component layer. The composition ratio of Pb:Ti:Zr with thickness were 1:0.94:0.55. Occurrence of a single-phase of PZT was initiated at around $550^{\circ}C$ and almost completed at $750^{\circ}C$ under the fixed time of 1hr. As the concentration of Pb increased, the roughness and crystallization in the film increased. From the as result of using XPS and TEM, the single phase formation through annealing is evident. The electrical properites of the prepared PZT thin film(Zr/Ti=40/60, 300 nm) on a Pt-coated substrate were as follow: dielectric constant ${\varepsilon}_r=475$, coercive field Ec=320 kV/cm, and remanant polarization $P_r=11{\mu}C/cm^2$ at an applied voltage of 18 V.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2009.05a
• /
• pp.92-92
• /
• 2009

• Proceedings of the Korean Vacuum Society Conference
• /
• 2008.02a
• /
• pp.336-336
• /
• 2008