• Journal of the Semiconductor & Display Technology
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• v.16 no.1
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• pp.1-5
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• 2017

Encapsulation of organic based devices is essential issue due to easy deterioration of organic material by water vapor. Thin layer of encapsulation film is required to preserve transparency yet protecting materials in it. Atomic layer deposition(ALD) is a promising solution because of its low temperature deposition and quality of the deposited film. $Al_2O_3$ or $Al_2O_3/TiO_2/Al_2O_3$ multilayer film has shown excellent environmental protection characteristics despite of thin thicknesses of the films. $Al_2O_3/TiO_2/Al_2O_3$ multilayer and 1.5 dyad layer of $Al_2O_3/polymer/Al_2O_3$ deposited by ALD was measured to have water vapor transmittance rate(WVTR) well below the detection limit($5.0{\times}10^{-5}g/m^2day$) of MOCON Aquatran 2 equipment.

• Biotechnology and Bioprocess Engineering:BBE
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• v.9 no.3
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• pp.179-183
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• 2004

A biocompatible polyelectrolyte complex multilayer (PECML) film consisting of poly-L-lysine (PLL) as a polycation and hyaluronic acid (HA) as a polyanion was developed to test its use for surface modification to prevent cell attachment and protein drug delivery. The formation of PECML through the electrostatic interaction of HA and PLL was confirmed by contact angle measurement, ESCA analysis, and HA content analysis. HA content increased rapidly up to 8 cycles for HA/PLL deposition and then slightly increased with an increasing number of deposition cycle. In vitro release of PLL in the PECML continued up to 4 days and ca. 25% of HA remained on the chitosan-coated cover glass after in vitro release test for 7 days. From the results, PECML of HA and PLL appeared to be stable for about 4 days. The surface modification of the chitosan-coated cover glass with PECML resulted in drastically reduced peripheral blood mononuclear cell (PBMC) attachment. Concerned with its use for protein drug delivery, we confirmed that bovine serum albumin (BSA) as a model protein could be incorporated into the PECML and its release might be triggered by the degradation of HA with hyaluronidase.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.9
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• pp.798-801
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• 2007

Multilayer transparent electrodes, having a much lower electrical resistance than the widely used transparent conducting oxide electrodes, were prepared by using radio frequency magnetron sputtering. The multilayer structure consisted of five layers, indium tin oxided (ITO)/zinc oxide (ZnO)/Ag/zinc oxide (ZnO)/ITO. With about 50 nm thick ITO films, the multilayer showed a high optical transmittance in the visible range of the spectrum and had color neutrality. The electrical and optical properties of ITO/ZnO/Ag/ZnO/ITO multilayer were changed mainly by Ag film properties, which were affected by the deposition process of the upper layer. Especially ZnO layer was improved to adhesion of Ag and ITO. A high quality transparent electrode, having a resistance as low as and a high optical transmittance of 91% at 550 nm, was obtained. It could satisfy the requirement for the flexible OLED and LCD.

• Journal of the Semiconductor & Display Technology
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• v.13 no.2
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• pp.13-16
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• 2014

We prepared the ITO/Ag multilayer thin films on soda-lime glass substrate by the Facing Target Sputtering System (FTS) at room temperature. To confirm the effect of Ag layer in ITO/Ag multilayer thin films, we have prepared various range of Ag layer in its thickness and investigated prior to the setting of ITO/Ag multilayer thin films. The thickness of Ag layer was controlled by the sputtering deposition time. Properties of as-prepared samples were investigated by using a four-point probe, UV-Visual spectrometer with a spectral visual range (400 - 800 nm) and X-ray diffractometer (XRD). As a result, the transmittance of as-prepared samples turned out to be very low in the visible range due to light-scattering on the surface of thin film as the thickness of Ag layer got increased. However, reduction of phenomenon of light-reflection in visual range was observed around 20nm of Ag thickness. We prepared the ITO/Ag multilayer thin film with a resistivity of about $8{\times}10^{-5}[{\Omega}-cm]$ and a transmittance of more than 80 % at 550 nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.1
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• pp.27-32
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• 2021

In this study, we fabricated multilayer graphene on a glass substrate by stacking the monolayer graphene synthesized via chemical vapor deposition. The electrical sheet resistance and optical transmittance were evaluated to confirm the quality of the stacked multilayer graphene. Using the fabricated multilayer graphene/glass structure, we characterized its thermal radiative property in terms of the integrated emissivity. The integrated emissivity of the multilayer graphene/glass structure was tuned from 0.91 to 0.72 when the number of graphene layers was changed from 1 to 12. We also demonstrated that the emissivity tunability provided a way to control the apparent temperature of an object that can be used in infrared stealth applications.

• Transactions on Electrical and Electronic Materials
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• v.2 no.2
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• pp.16-20
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• 2001

Optoelectronic characteristics of the superlattice diode as a function of deposition temperature and annealing conditions have been studied. The multilayer nanocrystalline silicon/adsorbed oxygen (nc/Si/O) superlattice formed by molecular beam epitaxy (MBE) system. Experimental results showed that deposition temperature of 550$^{\circ}C$, followed by hydrogen annealing leads to best results, in terms of optical photoluminescence (PL) and electrical current-voltage (I-V) characteristics. Consequently, the experimental results of multilayer Si/O superlattic device showed the stable photoluminescence and good insulating behavior with high breakdown voltage. This is very useful promise for Si-based optoelectronic devices, and can be readily integrated with conventional silicon ULSI processing.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.470-473
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• 1995

We have constructed an apparatus for in sity measurement of stress of the film prepared by sputtering using an optical noncontact displacement detector. A Change of the gap distance between the detector and the substrate, caused by stress of a deposited film, was detected by a corresponding change of the reflectivity. The sensitivity of the displacement detector was $5.9\;{\mu}V/{\AA}$ and thus, it was turned out to be good enough to detect stress caused by deposition of a monoatomic layer. The apparatus was applied to in situ stress measurements of Co/X(X=Pd or Pt) multilayer thin films prepared on the glass substrates by dc magnetron sputtering. At the very beginning of the deposition, both Co and X sublayers have subjected to their own intrinsic stresses. However, when the film was thicker than about $100{\AA}$, constant tensile stress in the Co sublayer and compressive stress in the X sublayer were observed, which is believed to be related to a lattice mismatch between the matching planes of Co and X.

• Journal of the Semiconductor & Display Technology
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• v.16 no.4
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• pp.1-4
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• 2017

Encapsulation of organic based devices is essential issue due to easy deterioration of organic material by water vapor. Atomic layer deposition (ALD) is a promising solution because of its low temperature deposition and quality of the deposited film. Moisture permeation has a mechanism to pass through defects, Thin Film Encapsulation using inorganic / organic / inorganic hybrid film has been used as promising technology. $Al_2O_3$ / Polymer / $Al_2O_3$ multilayer film has shown excellent environmental protection characteristics despite of thin thicknesses of the films.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2000.11a
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• pp.18-19
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• 2000

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.179-183
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• 2000

For a ground plane in high-temperature superconducting ramp-edge junction devices, YBa$_2$Cu$_3$O$_{7-{\delta}}$/SrTiO$_3$/YBa$_2$Cu$_3$O$_{7-{\delta}}$ multilayer structures were fabricated using pulsed laser deposition and ECR ion milling. Various process parameters were adjusted to enhance the device characteristics. By etching the STO layer to form a tapered edge of about 15$^{\circ}$ and in-situ RF plasma treatment of bottom YBCO surface prior to deposition of top YBCO, the top-to-bottom YBCO showed T$_c$ of 75${\sim}$80 K and I$_c$ of about 40 mA through holes. It was found that the deposition of bottom YBCO at a reduced laser repetition rate of 1Hz increased the T$_c$ of top YBCO to 79.9 K. The resistivity of 570 layer was about 10$^6$ ${\Omega}$cm at 60 K, which ensures good electrical isolation between successive YBCO layers.