• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.364-364
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• 2009

The solar cell is in the spotlight as a future green energy source. In the solar cells based on silicon wafer, the improvement of efficiency is one of crucial issues. One of techniques for high efficiency is texturing on the surface of solar cells. We studied the laser texturing on the surface of multi-crystalline silicon solar cells. The laser texturing followed by chemical etching is adequate for the multi-crystalline structure which have random crystallographic directions. We used the fiber laser for texturing and the SiNx as a masking layer for etching process. We investigated the shapes of holes for texturing in the various laser power conditions and analyzed the holes after removal of thermal damages caused by laser ablation through a 3D profiler.

• Journal of the Semiconductor & Display Technology
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• v.15 no.4
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• pp.67-72
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• 2016

In this study, the texturing and the emitter formation processes were carried out with the wafer adhesion method to increase the productivity and reduce the production cost of the multi-crystalline silicon solar cell. After fabricating $156{\times}156mm$ solar cell according to the wafer adhesion method, the operation characteristics were analyzed and compared with those of the solar cell fabricated by the standard process method. In the case of a solar cell formed by the wafer adhesion method, it showed Jsc of $32.87mA/cm^2$, Voc of 0.612V, FF of 78.04% and efficiency of 15.71% respectively. The efficiency of the solar cell formed by the wafer adhesion method was 0.1% higher than that of the solar cell formed by the standard method. In addition, the productivity of the texturing and the emitter formation processes is expected to be approximately doubled. Therefore, it is expected that the manufacturing cost of the multi-crystalline solar cell can be reduced due to the improved productivity compared with the standard process.

• KIEE International Transactions on Electrophysics and Applications
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• v.2C no.5
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• pp.258-261
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• 2002

Electrical forming dependent current-voltage (I-V) and numerically derived differential conductance(dI／dV) characteristics have been presented in the multi-layer nano-crystalline silicon／oxygen (no-Si／O) superlattice. Distinct staircase-like features, indicating the presence of resonant tunnel barriers, are clearly observed in the dc I-V characteristics. Also, all samples showed a continuous change in current and zero conductivity around OV corresponding to the Coulomb blockade in the calculated dI／dV-V curve. Also, Ra-man scattering measurement showed the presence of a nano-crystalline Si structure. This result becomes a step in the right direction for the fabrication of silicon-based optoelectronic and quantum devices as well as for the replacement of silicon-on-insulator (SOI) in high speed and low power silicon MOSFET devices of the future.

• Current Photovoltaic Research
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• v.2 no.2
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• pp.41-47
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• 2014

Extensive investigation on silicon based thin film reveals a wide range of film characteristics, from low optical gap to high optical gap, from amorphous to micro-crystalline silicon etc. Fabrication of single junction, tandem and triple junction solar cell with suitable materials, indicate that fabrication of solar cell of a relatively moderate efficiency is possible with a better light induced stability. Due to these investigations, various competing materials like wide band gap silicon carbide and silicon oxide, low band gap micro-crystalline silicon and silicon germanium etc were also prepared and applied to the solar cells. Such a multi-junction solar cell can be a technologically promising photo-voltaic device, as the external quantum efficiency of such a cell covers a wider spectral range.

• Current Photovoltaic Research
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• v.5 no.1
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• pp.25-27
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• 2017

Nanoscale textured black silicon has attracted intensive attention due to its great potential as applications in multicrystalline silicon-based solar cells. It absorbs sunlight over a broad range of wavelengths but introduces large recombination centers, non-uniform doping into cell. In this study, we present a metal-assisted chemical etching technique plus alkaline etching process to fabricate nanoscale pyramid structures with optimized condition. To make the structures, silver nanoparticles-loaded mc-Si wafer was submerged into $H_2O_2/HF$ solution first for nanohole texturing the wafer and textured wafer etched again with KOH solution for making nanoscale pyramid structures. The average reflectivity (350-1050 nm) is about 8.42% with anti-reflection coating.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.109-109
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• 2006

Screen printing (SP) metal contact is typically applied to the solar cells for mass production. However, SP metal contact has low aspect ratio, low accuracy, hard control of the substrate penetration and unclean process. On the other hand, photo lithograpy (PL) metal contact can reduce defects by metal contact. In this investigation, PL metal contact was obtained the multi-layer structure of Ti/Pd/Ag by e-beam process. We applied SP metal contact and PL metal contact to single crystalline silicon solar cells, and demonstrated the difference of conversion efficiency. Because PL metal contact silicon solar cell has Jsc (short circuit current density) better than silicon solar cell applied SP metal contact.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.12
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• pp.1015-1020
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• 2012

Resistance of the front electrode is the highest proportion of the ingredients of the series resistance in crystalline silicon solar cell. While resistance of the front electrode is decreased with larger area, it induces the optical loss, causing the conversion efficiency drop. Therefore the front electrode with high aspect ratio increasing its height and decreasing is necessary for high-efficiency solar cell in considering shadowing loss and resistance of front electrode. In this paper, we used the screen printing method to form high aspect ratio electrode by multiple printing. Screen printing is the straightforward technology to establish the electrodes in silicon solar cell fabrication. The several printed front electrodes with Ag paste on silicon wafer showed the significantly increased height and slightly widen finger. As a result, the resistance of the front electrode was decreased with multiple printing even if it slightly increased the shadowing loss. We showed the improved electrical characteristics for c-Si solar cell with repeatedly printed front electrode by 0.5%. It lays a foundation for high efficiency solar cell with high aspect ratio electrode using screen printing.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.5
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• pp.195-199
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• 2008

Production of the silicon feedstock for the semiconductor industry cannot meet the requirement for the solar cell industry because the production volume is too small and production cost is too high. This situation stimulates the solar cell industry to try the lower grade silicon feedstock like UMG (Upgraded Metallurgical Grade) silicon of 5$\sim$6 N in purity. However, this material contains around 1 ppma of dopant atoms like boron or phosphorous. Calculation of the composition profile of these impurities using segregation coefficient during crystal growth makes us expect the change of the type from p to n : boron rich area in the early solidified part and phosphorous rich area in the later solidified part of the silicon ingot. It was expected that the change of the growth speed during the silicon crystal growth is effective in controlling the amount of the metal impurities but not effective in reducing the amount of dopants.

• Journal of Integrative Natural Science
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• v.4 no.3
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• pp.192-196
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• 2011

New method to encode multiple photonic features of Bragg type reflector on silicon wafer has been investigated. Multiple bit encodes of distributed Bragg reflector features have been prepared by electrochemical etching of crystalline silicon by using various square wave current densities. Optical characterization of multi-encoding of distributed Bragg reflectors on porous silicon was achieved by Ocean optics 2000 spectrometer for the search of possible applications of multiple bit encoding of distributed Bragg reflectors such as multiplexed assays and chemical sensors. The morphology and cross-sectional structure of multi-encoded distributed Bragg reflectors was investigated by field emission scanning electron micrograph.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.68-69
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• 2007

To make cost-effective solar cells, We have to use low cost material or make short process time or high temperature process. In solar cells, formation of emitter is basic and important technique according to build-up P-N junction. Diffusion process using spin-on dopants has all of this advantage. In this paper, We investigated n+ emitter formation spin-on dopants to apply crystalline silicon solar cells. We known variation of sheet resistance according to variation of temperature and single-crystalline and multi-crystalline silicon wafer using Honeywell P-8545 phosphorus spin-on dopants. We obtain uniformity of sheet resistance within 3~5% changing RPM of spin coater.