• Title/Summary/Keyword: mott insulator

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Mott-Insulator Metal Switching Technology for New Concept Devices (신개념 스위칭 소자를 위한 모트-절연체 금속 전이 기술)

  • Kim, H.T.;Roh, T.M.
    • Electronics and Telecommunications Trends
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    • v.36 no.3
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    • pp.34-40
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    • 2021
  • For developing a switching device of a new concept that cannot be implemented with a semiconductor device, we introduce the Mott insulator-metal transition (IMT) phenomenon occurring out of the semiconductor regime, such as the temperature-driven IMT, the electric-field or voltage-driven IMT, the negative differential resistance (NDR)-IMT switching generated at constant current, and the NDR-based IMT-oscillation. Moreover, the possibilities of new concept IMT switching devices are briefly explained.

Metal-Insulator Transition of Vanadium Dioxide Based Sensors (바나듐 산화물의 금속-절연체 전이현상 기반 센서 연구)

  • Baik, Jeong Min
    • Journal of Sensor Science and Technology
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    • v.23 no.5
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    • pp.314-319
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    • 2014
  • Here, we review the various methods for the preparation of vanadium dioxide ($VO_2$) films and nanowires, and their potential applications to the sensors such as gas sensor, strain sensor, and temperature sensor. $VO_2$ is an interesting material on account of its easily accessible and sharp Mott metal-insulator transition (MIT) at ${\sim}68^{\circ}C$ in the bulk. The MIT is also triggered by the electric field, stress, magnetic field etc. This paper involves exceptionally sensitive hydrogen sensors based on the catalytic process between hydrogen molecules and Pd nanoparticles on the $VO_2$ surface, and fast responsive sensors based on the self-heating effects which leads to the phase changes of the $VO_2$. These features will be seen in this paper and can enable strategies for the integration of a $VO_2$ material in advanced and complex functional units such as logic gates, memory, FETs for micro/nano-systems as well as the sensors.

Resistive Switching Properties of N and F co-doped ZnO

  • Kim, Minjae;Kang, Kyung-Mun;Wang, Yue;Chabungbam, Akendra Singh;Kim, Dong-eun;Kim, Hyung Nam;Park, Hyung-Ho
    • Journal of the Microelectronics and Packaging Society
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    • v.29 no.2
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    • pp.53-58
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    • 2022
  • One of the most promising emerging technologies for the next generation of nonvolatile memory devices based on resistive switching (RS) is the resistive random-access memory mechanism. To date, RS effects have been found in many transition metal oxides. However, no clear evidence has been reported that ZnO-based resistive transition mechanisms could be associated with strong correlation effects. Here, we investigated N, F-co-doped ZnO (NFZO), which shows bipolar RS. Conducting micro spectroscopic studies on exposed surfaces helps tracking the behavioral change in systematic electronic structural changes during low and high resistance condition of the material. The significant difference in electronic conductivity was observed to attribute to the field-induced oxygen vacancy that causes the metal-insulator Mott transition on the surface. In this study, we showed the strong correlation effects that can be explored and incorporated in the field of multifunctional oxide electrons devices.

Colossal Resistivity Change of Polycrystalline NiO Thin Film Deposited by RF Magnetron Sputtering (RF 마그네트론 스퍼터 방법에 의한 다결정 NiO 박막의 비저항 변화)

  • Kim, Youmg-Eun;No, Young-Soo;Park, Dong-Hee;Choi, Ji-Won;Chae, Keun-Hwa;Kim, Tae-Hwan;Choi, Won-Kook
    • Journal of the Korean Vacuum Society
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    • v.19 no.6
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    • pp.475-482
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    • 2010
  • Polycrystalline NiO thin films were deposited on glass substrate by RF magnetron sputtering using only Ar as a plasma sputter gas. based on the analysis of x-ray diffraction (XRD), NiO films had a polycrystalline cubic (NaCl type) structure. NiO thin films grown below and above $200^{\circ}C$ showed preferred orientation of (111) and (220) respectively. It showed colossal change in electrical resistivity as much a ${\sim}10^7$ order form an insulating state of $105\;{\Omega}cm$ below $200^{\circ}C$ to a conducting state of $10^{-2}{\sim}10^{-1}\;{\Omega}cm$ above $300^{\circ}C$ such a Mott metal-insulator transition (MIT) in polycrystalline.

Synthesis and Temperature-Dependent Local Structural Properties of Ti2O3

  • Hwang, Inhui;Jin, Zhenlan;Park, Changin;Jiang, Bingzhi;Han, S.W.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.202.2-202.2
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    • 2013
  • Ti2O3 is known as a typical Mott insulator with a transition temperature of near $200^{\circ}C$. Unlike VO2, Ti2O3 does not have a structural phase transition near the metal-insulator-transition (MIT) temperature. We investigated the temperature-dependent thermal vibration change using temperature-dependent x-ray absorption fine structure (XAFS) at Ti K-edge in the temperature range of 300~600 K. Ti2O3 powder and films were synthesized using thermal chemical vapor deposition (CVD) at $800{\sim}900^{\circ}C$. X-ray diffraction measurements show a single phased Ti2O3 at room temperature. XAFS confirmed no structural phase transition in the temperature of 300~600 K. A small but distinguishable structural disorder change was observed near the transition temperature. We will discuss the MIT behavior with the change of structural disorder.

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In Situ Spectroscopy in Condensed Matter Physics

  • Noh, Tae Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.92-92
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    • 2014
  • Recently, many state-of-art spectroscopy techniques are used to unravel the mysteries of condensed matters. And numerous heterostructures have provided a new avenue to search for new emergent phenomena. Especially, near the interface, various forms of symmetry-breaking can appear, which induces many novel phenomena. Although these intriguing phenomena can be emerged at the interface, by using conventional measurement techniques, the experimental investigations have been limited due to the buried nature of interface. One of the ways to overcome this limitation is in situ investigation of the layer-by-layer evolution of the electronic structure with increasing of the thickness. Namely, with very thin layer, we can measure the electronic structure strongly affected by the interface effect, but with thick layer, the bulk property becomes strong. Angle-resolved photoemission spectroscopy (ARPES) is powerful tool to directly obtain electronic structure, and it is very surface sensitive. Thus, the layer-by-layer evolution of the electronic structure in oxide heterostructure can be investigated by using in situ ARPES. LaNiO3 (LNO) heterostructures have recently attracted much attention due to theoretical predictions for many intriguing quantum phenomena. The theories suggest that, by tuning external parameters such as misfit strain and dimensionality in LNO heterostructure, the latent orders, which is absent in bulk, including charge disproportionation, spin-density-wave order and Mott insulator, could be emerged in LNO heterostructure. Here, we performed in situ ARPES studies on LNO films with varying the misfit strain and thickness. (1) By using LaAlO3 (-1.3%), NdGaO3 (+0.3%), and SrTiO3 (+1.7%) substrates, we could obtain LNO films under compressive strain, nearly strain-free, and tensile strain, respectively. As strain state changes from compressive to tensile, the Ni eg bands are rearranged and cross the Fermi level, which induces a change of Fermi surface (FS) topology. Additionally, two different FS superstructures are observed depending on strain states, which are attributed to signatures of latent charge and spin orderings in LNO films. (2) We also deposited LNO ultrathin films under tensile strain with thickness between 1 and 10 unit-cells. We found that the Fermi surface nesting effect becomes strong in two-dimensions and significantly enhances spin-density-wave order. The further details are discussed more in presentation. This work was collaborated with Hyang Keun Yoo, Seung Ill Hyun, Eli Rotenberg, Ji Hoon Shim, Young Jun Chang and Hyeong-Do Kim.

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