• Title/Summary/Keyword: monolithic amplifier IC

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Compact 2.5 Gb/s Burst-Mode Receiver with Optimum APD Gain for XG-PON1 and GPON Applications

  • Kim, Jong-Deog;Le, Quan;Lee, Mun-Seob;Yoo, Hark;Lee, Dong-Soo;Park, Chang-Soo
    • ETRI Journal
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    • v.31 no.5
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    • pp.622-624
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    • 2009
  • This letter presents a compact 2.5 Gb/s burst-mode receiver using the first reported monolithic amplifier IC developed with 0.25 ${\mu}m$ SiGe BiCMOS technology. With optimum avalanche photodiode gain, the receiver module can obtain a fast response, high sensitivity and wide dynamic range, satisfying the overhead timing and various power specifications for a 2.5 Gb/s next-generation passive optical network (PON), as well as a legacy 1.25 Gb/s PON in the upstream.

The study on Characteristics and Fabrication of L-C Library components (L-C Library 박막 소자의 제조와 특성에 관한 연구)

  • Kim, In-Sung;Min, Bok-Ki;Song, Jae-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.861-863
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    • 2003
  • In this work, the preparations and characteristics of capacitors and inductors for RF IC as a integrated devices are investigated. These kinds of capacitors and inductors can be applicable to the passive components utilized in voltage controlled oscillator(VCO), low noise amplifier(LAN), mixer and synthesizer for mobile telecommunication of radio frequency band(900 MHz to 2.2GHz), and in a library of monolithic microwave integrated circuit(MMIC). The results show that these inductors and capacitors array for RF IC may be applicable to the RF IC passive components for mobile telecommunication.

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Full-Digital Controlled High Power Soft Switching DC/DC Converter for Resistance Welding (저항용접용 풀-디지털제어 대용량 소프트 스위칭 DC/DC 켄버터)

  • 김은수;김태진;변영복;조기연;조상명
    • Proceedings of the KWS Conference
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    • 2000.04a
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    • pp.99-102
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    • 2000
  • Conventionally, ZVS FB DC/DC converter was controlled by monolithic IC UC3879, which includes the functions of oscillator, error amplifier and phase-shift circuit. Also, microprocessor and DSP have been widely used for the remote control and for the immediate waveform control in ZVS FB DC/DC converter. However the conventional microprocessor controller is complex and difficult to control because the controller consists of analog and digital parts. In the case of the control of FB DC/DC converter, the output is required of driving a direct signal to the switch drive circuits by the digital controller. So, this paper presents the method and realization of designing the digital-to-phase shift PWM circuit controlled by DSP (TMX320C32) in a 2,500A, 40㎾ WS FB DC/DC converter.

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An Wideband GaN Low Noise Amplifier in a 3×3 mm2 Quad Flat Non-leaded Package

  • Park, Hyun-Woo;Ham, Sun-Jun;Lai, Ngoc-Duy-Hien;Kim, Nam-Yoon;Kim, Chang-Woo;Yoon, Sang-Woong
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.2
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    • pp.301-306
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    • 2015
  • An ultra-compact and wideband low noise amplifier (LNA) in a quad flat non-leaded (QFN) package is presented. The LNA monolithic microwave integrated circuit (MMIC) is implemented in a $0.25{\mu}m$ GaN IC technology on a Silicon Carbide (SiC) substrate provided by Triquint. A source degeneration inductor and a gate inductor are used to obtain the noise and input matching simultaneously. The resistive feedback and inductor peaking techniques are employed to achieve a wideband characteristic. The LNA chip is mounted in the $3{\times}3-mm^2$ QFN package and measured. The supply voltages for the first and second stages are 14 V and 7 V, respectively, and the total current is 70 mA. The highest gain is 13.5 dB around the mid-band, and -3 dB frequencies are observed at 0.7 and 12 GHz. Input and output return losses ($S_{11}$ and $S_{22}$) of less than -10 dB measure from 1 to 12 GHz; there is an absolute bandwidth of 11 GHz and a fractional bandwidth of 169%. Across the bandwidth, the noise figures (NFs) are between 3 and 5 dB, while the output-referred third-order intercept points (OIP3s) are between 26 and 28 dBm. The overall chip size with all bonding pads is $1.1{\times}0.9mm^2$. To the best of our knowledge, this LNA shows the best figure-of-merit (FoM) compared with other published GaN LNAs with the same gate length.

Digital-To-Phase-Shift PWM Circuit for High Power ZVS Full Bridge DC/DC Converter (대용랑 ZVS Full Bridge DC/DC 컨버터에 있어서 Digital-To-Phase Shift PWM 발생회로)

  • Kim, Eun-Su;Kim, Tae-Jin;Byeon, Yeong-Bok;Park, Sun-Gu;Kim, Yun-Ho;Lee, Jae-Hak
    • The Transactions of the Korean Institute of Electrical Engineers B
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    • v.49 no.1
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    • pp.54-61
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    • 2000
  • Conventionally, ZVS FB DC/DC converter was controlled by monolithic IC UC3879, which includes the functions of oscillator, error amplifier and phase-shift circuit. Also, microprocessor and DSP have been widely used for the remote control and for the immediate waveform control in ZVS FB DC/DC converter. However the conventional microprocessor controller is complex and difficult to control because the controller consists of analog and digital parts. In the case of the control of FB DC/DC converter, the output is required of driving a direct signal to the switch drive circuits by the digital controller. So, this paper presents the method and realization of designing the digital-to-phase shift PWM circuit controlled by DSP (TMX320C32) in a 2,500A, 40㎾ ZVS FB DC/DC converter.

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Development of V-band Wireless Transceiver using MMIC Modules (MMIC 모듈을 이용한 V-band 무선 송수신 시스템의 구축)

  • Lee, Sang-Jin;An, Dan;Lee, Mun-Kyo;Go, Du-Hyun;Jin, Jin-Man;Kim, Sung-Chan;Kim, Sam-Dong;Park, Hyun-Chang;Park, Hyung-Moo;Rhee, Jin-Koo
    • Proceedings of the IEEK Conference
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    • 2005.11a
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    • pp.575-578
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    • 2005
  • We report on a low-cost V-band wireless transceiver with no use of any local oscillator in the receiver block using a self-heterodyne architecture. V-band Microwave monolithic IC (MMIC) modules were developed to demonstrate the wireless transceiver using coplanar waveguide (CPW) and GaAs PHEMT technologies. The MMIC modules such as the MMIC low noise amplifier (LNA), medium power amplifier (MPA) and the up/down-mixer were installed in the transceiver system. To interface the MMIC chips with the component modules for the transceiver system, CPW-to-waveguide fin-line transition modules of WR-15 type were designed and fabricated. The fabricated LNA modules showed a $S_{21}$ gain of 8.4 dB and a noise figure of 5.6 dB at 58 GHz. The MPA modules exhibited a gain of 6.9 dB and a $P_1$ $_{dB}$ of 5.4 dBm at 58 GHz. The conversion losses of the up-mixer and the down-mixer module were 14.3 dB at a LO power of 15 dBm, and 19.7 dB at a LO power of 0 dBm, respectively. From the measurement of V-band wireless transceiver, a conversion gain of 0.2 dB and a P $_{1dB}$ of 5.2 dBm were obtained in the transmitter block. The receiver block showed a conversion gain of 2.1 dB and a P $_{1dB}$ of -18.6 dBm. The wireless transceiver system demonstrated a successful data transfer within a distance of 5 meters.

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V-band Self-heterodyne Wireless Transceiver using MMIC Modules

  • An, Dan;Lee, Mun-Kyo;Lee, Sang-Jin;Ko, Du-Hyun;Jin, Jin-Man;Kim, Sung-Chan;Kim, Sam-Dong;Park, Hyun-Chang;Park, Hyung-Moo;Rhee, Jin-Koo
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.5 no.3
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    • pp.210-219
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    • 2005
  • We report on a low-cost V-band wireless transceiver with no use of any local oscillator in the receiver block using a self-heterodyne architecture. V-band millimeter-wave monolithic IC (MMIC) modules were developed to demonstrate the wireless transceiver using coplanar waveguide (CPW) and GaAs PHEMT technologies. The MMIC modules such as the MMIC low noise amplifier (LNA), medium power amplifier (MPA) and the up/down-mixer were installed in the transceiver system. To interface the MMIC chips with the component modules for the transceiver system, CPW-to-waveguide fin-line transition modules of WR-15 type were designed and fabricated. The fabricated LNA modules showed a $S_{21}$ gain of 8.4 dB and a noise figure of 5.6 dB at 58 GHz. The MPA modules exhibited a gain of 6.9 dB and a $P_{1dB}$ of 5.4 dBm at 58 GHz. The conversion losses of the up-mixer and the down-mixer module were 14.3 dB at a LO power of 15 dBm, and 19.7 dB at a LO power of 0 dBm, respectively. From the measurement of V-band wireless transceiver, a conversion gain of 0.2 dB and a $P_{1dB}$ of 5.2 dBm were obtained in the transmitter block. The receiver block showed a conversion gain of 2.1 dB and a $P_{1dB}$ of -18.6 dBm. The wireless transceiver system demonstrated a successful data transfer within a distance of 5 meters.