• Title/Summary/Keyword: mobile mixer

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Field Applicability Evaluation of SB Latex-Modified Concrete for Concrete Bridge Deck Overlay (콘크리트 교면 덧씌우기를 위한 SB 라텍스개질 콘크리트의 현장적용성 평가)

  • Yun, Kyong-Ku;Lee, Joo-Hyung;Hong, Chang-Woo;Kim, Ki-Hyun;Kim, Tae-Kyong
    • International Journal of Highway Engineering
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    • v.3 no.4 s.10
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    • pp.93-103
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    • 2001
  • This study focused on the field applicability evaluation of SB latex-modified concrete (LMC) for concrete bridge deck overlay using mobile mixer. The main experimental factors were water-cement ratio(31, 33, 35 37%), latex contents(0, 5, 10, 15, 20%), and fine aggregate ratio(55, 56, 57, 58%) in order to evaluate the workability, mechanical properties, and durability property of LMC. The slump loss, air content, compressive and flexible strength tests were used to evaluate LMC workability and strength properties. Also, the rapid chloride permeability test was used to evaluate the relative permeability of LMC. As a results, the LMC with enough workability and good quality was produced when it was mixed in field using mobile mixer, satisfying the target compressive strength and flexural strength. The required water-cement ratio of LMC for same workability when mixing with mobile mixer was less than that when mixing in laboratory. Increasing the amount of latex produced concrete with increased flexural strength by mobile mixer. The required cement-water ratios for same initial $19{\pm}3cm$ slump were 37% and 33% at laboratory and mobile mixer, respectively. The mobile mixer was accurately calibrated satisfying the required specification.

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A 1.8GHz Low Voltage CMOS RF Down-Conversion Mixer (1.8GHz 대역의 저전압용 CMOS RF하향변환 믹서 설계)

  • 김희진;이순섭;김수원
    • Proceedings of the IEEK Conference
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    • 2000.06e
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    • pp.61-64
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    • 2000
  • This paper describes a RF Down-Conversion Mixer for mobile communication systems. This circuit achieves low voltage operation and low power consumption by reducing stacked devices of conventional gilbert cell mixer. In order to reduce stacked devices, we use source-follower structure. The proposed RF Down-Conversion mixer operates up to 1.85GHz at 1.5V power supply with 0.25um CMOS technology and consumes 2.2mA.

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Reconfigurable Multi-Band Mixer for SDR System

  • Kim, Jeong-Pyo;Choi, Jae-Hoon
    • Journal of electromagnetic engineering and science
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    • v.7 no.4
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    • pp.154-160
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    • 2007
  • A reconfigurable multi-band mixer for the SDR system is proposed. The proposed reconfigurable mixer is operated between $850\;MHz{\sim}2\;GHz$, which includes all commercial mobile communication service. Because the varactor diodes are used to select a specific frequency and to adjust the impedance characteristic of the selected frequency band, the proposed reconfigurable mixer can be achieved to similar performance across all of the tuning range. In addition, the designed reconfigurable mixer is applicable for the SDR system since it has a single signal path for the multi-band signals and wide band tuning range.

Low IF Resistive FET Mixer for the 4-Ch DBF Receiver with LNA (LNA를 포함하는 4채널 DBF 수신기용 Low IF Resistive FET 믹서)

  • 민경식;고지원;박진생
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2002.11a
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    • pp.16-20
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    • 2002
  • This paper describes the resistive FET mixer with low IF for the 4-Ch DBF(Digital Beam Forming) receiver with LNA(Low Noise Amplifier). This DBF receiver based on the direct conversion method is generally suitable for high-speed wireless mobile communications. A radio frequency(RF), a local oscillator(LO) and an intermediate frequency(IF) considered in this research are 2.09 ㎓, 2.08 ㎓ and 10㎒, respectively. The RF input power, LO input power and Vgs are used -10㏈m, 6㏈m and -0.4 V, respectively. In the 4-Ch resistive FET mixer with LNA, the measured IF and harmonic components of 10㎒, 20㎒, 2.09㎓ and 4.17㎓ are about -12.5 ㏈m, -57㏈m, -40㏈m and -54㏈m, respectively. The IF output power observed at each channel of 10㎒ is about -12.5㏈m and it is higher 27.5 ㏈m than the maximum harmonic component of 2.09㎓. Each IF output spectrum of the 4-Ch is observed almost same value and it shows a good agreement with the prediction.

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Design for the Low If Resistive FET Mixer for the 4-Ch DBF Receiver

  • Ko, Jee-Won;Min, Kyeong-Sik;Arai, Hiroyuki
    • Journal of electromagnetic engineering and science
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    • v.2 no.2
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    • pp.117-123
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    • 2002
  • This paper describes the design for the resistive FET mixer with low If for the 4-Ch DBF(Digital Beam Forming) receiver This DBF receiver based on the direct conversion method is generally suitable for high-speed wireless mobile communications. A radio frequency(RF), a local oscillator(LO) and an intermediate frequency(If) considered in this research are 2.09 GHz, 2.08 CHz and 10 MHz, respectively. This mixer is composed of band pass filter, a low pass filter and a DC bias circuit. Super low noise HJ FET of NE3210S01 is considered in design. The RE input power, LO input power and Vcs are used -10 dBm, 6 dBm and -0.4 V, respectively. In the 4-Ch resistive FET mixer, the measured If and harmonic components of 10 MHe, 20 MHz and 2.087 CHz are about -19.2 dBm, -66 dBm and -48 dBm, respectively The If output power observed at each channel of 10 MHz is about -19.2 dBm and it is higher 28.8 dBm than the maximum harmonic component of 2.087 CHz. Each If output spectrum of the 4-Ch is observed almost same value and it shows a good agreement with the prediction.

CMOS Front-End for a 5 GHz Wireless LAN Receiver (5 GHz 무선랜용 수신기의 설계)

  • Lee, Hye-Young;Yu, Sang-Dae;Lee, Ju-Sang
    • Proceedings of the KIEE Conference
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    • 2003.11c
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    • pp.894-897
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    • 2003
  • Recently, the rapid growth of mobile radio system has led to an increasing demand of low-cost high performance communication IC's. In this paper, we have designed RF front end for wireless LAN receiver employ zero-IF architecture. A low-noise amplifier (LNA) and double-balanced mixer is included in a front end. The zero-IF architecture is easy to integrate and good for low power consumption, so that is coincided to requirement of wireless LAN. But the zero-IF architecture has a serious problem of large offset. Image-reject mixer is a good structure to solve offset problem. Using offset compensation circuit is good structure, too. The front end is implemented in 0.25 ${\mu}m$ CMOS technology. The front end has a noise figure of 5.6 dB, a power consumption of 16 mW and total gain of 22 dB.

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A Study on the Computational Design of Static Mixer and Mixing Characteristics of Liquid Silicon Rubber using Fluidic Analysis for LED Encapsulation (LED Encapsulation을 위한 스태틱 믹서의 전산 설계 및 유동해석을 이용한 액상 실리콘의 혼합 특성에 대한 연구)

  • Cho, Yong-Kyu;Ha, Seok-Jae;Huxiao, Huxiao;Cho, Myeong-Woo;Choi, Jong Myeong;Hong, Seung-Min
    • Design & Manufacturing
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    • v.7 no.1
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    • pp.55-59
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    • 2013
  • A Light Emitting Diode(LED) is a semiconductor device which converts electricity into light. LEDs are widely used in a field of illumination, LCD(Liquid Crystal Display) backlight, mobile signals because they have several merits, such as low power consumption, long lifetime, high brightness, fast response, environment friendly. In general, LEDs production does die bonding and wire bonding on board, and do silicon and phosphor dispensing to protect LED chip and improve brightness. Then lens molding process is performed using mixed liquid silicon rubber(LSR) by resin and hardener. A mixture of resin and hardener affect the optical characteristics of the LED lens. In this paper, computational design of static mixer was performed for mixing of liquid silicon. To evaluate characteristic of mixing efficiency, finite element model of static mixer was generated, and fluidic analysis was performed according to length of mixing element. Finally, optimal condition of length of mixing element was applied to static mixer from result of fluidic analysis.

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Design of a CMOS Tx RF/IF Single Chip for PCS Band Applications (PCS 대역 송신용 CMOS RF/IF 단일 칩 설계)

  • Moon, Yo-Sup;Kwon, Duck-Ki;Kim, Keo-Sung;Park, Jong-Tae;Yu, Chong-Gun
    • Journal of IKEEE
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    • v.7 no.2 s.13
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    • pp.236-244
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    • 2003
  • In this paper, RF and IF circuits for mobile terminals which have usually been implemented using expensive BiCMOS processes are designed using CMOS circuits, and a Tx CMOS RF/IF single chip for PCS applications is designed. The designed circuit consists of an IF block including an IF PLL frequency synthesizer, an IF mixer, and a VGA and an RF block including a SSB RF mixer and a driver amplifier, and performs all transmit signal processing functions required between digital baseband and the power amplifier. The phase noise level of the designed IF PLL frequency synthesizer is -114dBc/Hz@100kHz and the lock time is less than $300{\mu}s$. It consumes 5.3mA from a 3V power supply. The conversion gain and OIP3 of the IF mixer block are 3.6dB and -11.3dBm. It consumes 5.3mA. The 3dB frequencies of the VGA are greater than 250MHz for all gain settings. The designed VGA consumes 10mA. The designed RF block exhibits a gain of 14.93dB and an OIP3 of 6.97dBm. The image and carrier suppressions are 35dBc and 31dBc, respectively. It consumes 63.4mA. The designed circuits are under fabrication using a $0.35{\mu}m$ CMOS process. The designed entire chip consumes 84mA from a 3V supply, and its area is $1.6㎜{\times}3.5㎜$.

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A Study on the Receiving Performance Improvement of Digital Mobile Communication (디지털 이동통신의 수신성능개선에 관한 연구)

  • 주재한
    • Journal of the Korea Computer Industry Society
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    • v.2 no.11
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    • pp.1477-1482
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    • 2001
  • In this paper, we examined receiving parameters of receiver and also analyzed them through simulation based on J-STD-018, which is the minimum specification of PCS mobile station. Receiving system was made a passive double balance mixer which has low gain and high IIP3, and an intermediate frequency amplifier for enhancing the low gain. The result of simulating receiving parameter is as follows: noise figure which is the parameter of specification of the receiving sensitivity is 6.746dB, IIP3 which is the parameter of specification of the intermodulation spurious response attenuation is -11.358dBm.

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