• 폴리머
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• 제26권6호
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• pp.752-758
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• 2002

사슬길이가 서로 다른 두 종류의 n-paraffin 혼합물이 결정을 형성할 때 사슬의 움직임과 형성된 라멜라의 구조를 조사하기 위하여 FTIR, FT-Raman, XRD 실험방법을 이용하였다. FTIR crystal field splitting, Raman longitudinal acoustic mode, 그리고 SAXS long period 측정 결과들을 비교하여 사슬길이가 다른 두 n-paraffin 사슬이 혼합되어 하나의 라멜라를 형성하거나 분리되어 각각의 라멜라를 형성하는 과정을 연구하였다.

• 대한화장품학회:학술대회논문집
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• 대한화장품학회 2003년도 IFSCC Conference Proceeding Book II
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• pp.357-368
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• 2003

II-A isotherms and phase behaviors of 'tocomide', a newly synthesized 1,3-bis(N-(2-hydroxyethyl)-tocopherol succinylamino)-2-hydroxypropane, mixed with cholesterol and linoleic acid, was studied for its monolayer miscibility and a stable delivery formulation for antioxidant applications. The monolayer of tocomide and cholesterol was formed in a homogeneously mixed state at air-water interface. The ternary mixtures with linoleic acid showed various bulk structures, including a stable and transparent solution of thermodynamically stable lamellar phase. The lamellar structure was confirmed by the X-ray diffraction (XRD) patterns and polarized microscopy such that pure tocomide formed a liquid crystal at room temperature with a lamellar periodicity of 36.7 $\AA$(2$\theta$=2.41$^{\circ}$).

• 한국결정성장학회지
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• 제16권4호
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• pp.157-161
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• 2006

혼합소스 HVPE(hydride vapor phase epitaxy) 방법을 이용하여 InGaN 층을 GaN 층이 성장된 사파이어 (0001) 기판 위에 성장하였다. InGaN 층을 성장하기 위해 금속 In에 Ga을 혼합하여 III족 소스로 이용하였으며 V족 소스로는 $NH_3$를 이용하였다. InGaN층은 금속 In에 Ga을 혼합한 소스와 HCl을 흘려 반응한 In-Ga 염화물이 다시 $NH_3$와 반응하도록 하여 성장하였다. XPS 측정을 통해 혼합소스 HVPE 방법으로 성장한 층이 InGaN 층임을 확인할 수 있었다. 선택 성장된 InGaN 층의 In 조성비는 PL과 CL을 통해서 분석하였다. 그 결과 In 조성비는 약 3%로 평가되었다. 또한, 4원 화합물인 InAlGaN 층을 성장하기 위해 In 금속에 Ga과 Al을 혼합하여 III족 소스로 사용하였다. 본 논문에서는 혼합소스 HVPE 방법에 의해 III족 소스물질로 금속 In에 Ga(Al)을 혼합한 소스를 이용하여 In(Al)GaN층을 성장할 수 있음을 확인할 수 있었다.

• Bulletin of the Korean Chemical Society
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• 제34권9호
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• pp.2800-2802
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• 2013

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.71-72
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• 2006

The stochiometric mixture of evaporating materials for the $ZnIn_2S_4$ single crystal thin film was prepared from horizontal furnace. To obtain the $ZnIn_2S_4$ single crystal thin film. $ZnIn_2S_4$ mixed crystal was deposited on throughly etched semi-insulating GaAs(100). In the Hot Wall Epitaxy(HWE) system. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $ZnIn_2S_4$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 0.0148 eV and 0.1678 eV at $10_{\circ}K$, respectively.

• 대한치과기공학회지
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• 제31권4호
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• pp.25-30
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• 2009

Zirconia($ZrO_2$) has attracted much attention in science and technology because of its high refractive index, high melting temperature, hardness, low thermal conductivity and corrosion barrier properties. And it is widely used as the dental restoration material because of its esthetic appearance. In this research, we analyzed the particle size and composition of the imported dental porcelain for zirconia. And the glass frit was produced. To decrease the glass transition temperature and softening temperature of the glass frit, $Li_2O$ was added into it and the effect of $Li_2O$ on the firing temperature was researched. Then the glass which contains leucite crystal with a high coefficient of thermal expansion(CTE) was manufactured and it was mixed with the glass frit to control the CTE. The phase composition were analyzed using the X-ray diffraction. The morphologies of the samples were observed by the scanning electron microscope. The 4wt% $Li_2O$-added glass frit has the optimal glass transition temperature and softening temperature. And 6 wt% leucite crystal was mixed with the glass frit to control the CTE. From the experimental results of crystallization, the crystal phase was found only leucite crystal.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.237-242
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• 2001

The stochiometric mix of evaporating materials for the CuGaSe$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CuGaSe$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 610$^{\circ}C$ and 450$^{\circ}C$, respectively The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuGaSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting Δ So and the crystal field splitting ΔCr were 91 meV and 249.8 meV at 20 K, respectively. From the Photoluminescence measurement on CuGaSe$_2$ single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (D$^{\circ}$,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy 7f neutral acceptor bound excision were 8 meV and 35.2 meV, respectivity. By Haynes rule, an activation energy of impurity was 355.2 meV

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.124-127
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• 2003

The stochiometric $AgGaSe_2$ polycrystalline mixture of evaporating materials for the $AgGaSe_2$ single crystal thin film was prepared from horizontal furnance. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal and semi-insulating GaAs(100) wafer were used as source material and substrate for the Hot Wall Epitaxy (HWE) system, respectively. The source and substrate temperature were fixed at $630^{\circ}C$ and $420^{\circ}C$, respectively. The thickness of grown single crystal thin films is $2.1{\mu}m$. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. From the photoluminescence measurement of $AgGaSe_2$ single crystal thin film, we observed free excition ($E_x$) observable only in high quality crystal and neutral bound excition ($D^{\circ}$,X) having very strong peak intensity. And, the full width at half maximum and binding energy of neutral donor bound excition were 8 meV and 14.1 meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.

• 한국물환경학회지
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• 제21권1호
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• pp.59-65
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• 2005

A phosphate recovery system from artificial wastewater was developed using a completely mixed phosphorus crystallization reactor, in which powdered converter slag was used as a seeding crystal. In preliminary test, the optimal pH range for meta-stable hydroxyapatite crystallization for high phosphorus concentration was observed to be 6.0 to 7.0, which was different from the conventionally known pH range (8.0~9.5) for effective crystallization in relatively low phosphorus concentration less than 5 mg/L. The average phosphorus removal efficiency in a lab-scaled completely mixed crystallization system for artificial wastewater with about 100 mg/L of average $PO_4-P$ concentration was shown to be 60.9% for 40 days of lapsed time. XRD analysis exhibited that crystalline of hydroxyapatite formed on the surface of seed crystal, which was also observed in SEM analysis. In EDS mapping analysis, composition mole ratio (=Ca/P) of the crystalline was found to be 1.78, indicating the crystalline on the surface of seed crystal is likely to be hydroxyapatite. Particle size distribution analysis showed that average size of seed crystal increased from $28{\mu}m$ up to $50{\mu}m$, suggesting that phosphorus recycling from wastewater with high phosphorus concentration can be successfully obtained by using the phosphorus crystallization recovery system.

• Bulletin of the Korean Chemical Society
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• 제22권1호
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• pp.103-106
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• 2001