• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2002.11a
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• pp.69-73
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• 2002

We have designed and fabricated a low-cost, V-band CPW receiver chip set using GaAs PHEMT technology for the application of millimeter-wave wireless communication systems. Low noise amplifiers and down-converters were developed for this chip set. The fabricated low noise amplifier showed an S$\sub$21/ gain of 14.9 ㏈ at 60 ㎓ and a noise figure of 4.1 ㏈ at 52 ㎓. The down-converter exhibited a high conversion gain of 2 ㏈ at the low LO Power of 0 ㏈m. This work demonstrates that the GaAs PHEMT technology is a viable low-cost solution for V-band applications.

• ETRI Journal
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• v.28 no.5
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• pp.656-659
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• 2006

This letter presents a new polarizer which has a simple comb structure inside a circular waveguide. The electrical performance of the proposed comb polarizer is optimized by a circular waveguide radius and by the physical parameters of the comb plates. This polarizer is suitable for providing good performance in millimeter-band application because of its simple structure and low fabrication cost. In our experiments the dual-band comb polarizer designed in band 1(K) and band 2(Ka) showed good electrical performance without any tuning elements.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.4
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• pp.45-50
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• 2004

In this paper, we present the low voltage and high efficiency Q-band MIMIC oscillator using device-level power combined structure. The oscillator was successfully integrated by using 0.1 ${\mu}{\textrm}{m}$ GaAs PHEMTS and the CPW transmission line. We show that the highest efficiency is 19 % with an output power of 2.6 ㏈m at a frequency of 34.56 ㎓. The operating voltage of the oscillator is 2.2 V which is lower voltage than that of previously reported oscillators at Q-band. And the maximum output power of 6.7 ㏈m was obtained at a frequency of 34.56 ㎓.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.1133-1136
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• 2002

We designed and fabricated a low local oscillation (LO) power V-band CPW mixer module using a CPW-to-waveguide transition technology for the application of millimeter-wave wireless communication systems. The mixer was designed using a unique gate mixing architecture to achieve simultaneously a low LO input power, a high conversion gain, and good LO-RF isolation characteristics. The fabricated mixer exhibited a high conversion gain of 2 dB at a low LO power of 0 dBm. For data transmission of the 60 ㎓ wireless LNA systems, we fabricated a CPW-to-waveguide converter module of WR-15 type and mounted the fabricated mixer in the converter module. The fabricated V-band mixer exhibited a higher conversion gain and a lower LO input power than other reported V-band mixers.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.12
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• pp.103-108
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• 2004

In this paper, we present MIMIC(Millimeter-wave Monolithic Integrated Circuit) up-mixer with low conversion loss and low LO power for the V-band transmitter applications. The up-mixer was successfully integrated by using 0.1 ㎛ GaAs pseudomorphic HEMTs(PHEMTs) and coplanar waveguide (CPW) structures. The circuit is designed to operate at RF frequencies of 60.4 GHz, IF frequencies of 2.4 GHz, and LO frequencies of 58 GHz. The fabricated MIMIC up-mixer size is 2.3 mmxl.6 mm. The measured results show that the low conversion loss of 1.25 dB when input signal is -10.25 dBm at LO power of 5.4 dBm. The LO to RF isolation is 13.2 dB at 58 GHz. The fabricated V-band up-mixer represents lower LO input power and conversion loss characteristics than previous reported millimeter-wave up-mixers.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.7 s.361
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• pp.105-111
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• 2007

In this paper, we designed and fabricated a 3-dB tandem coupler using air-bridge technology for millimeter-wane monolithic integrated circuits, operating at W-band($75{\sim}110\;GHz$) frequency. Tightly edge-coupled CPW line has low directivity due to different even-mode and odd-mode phase velocity. To overcome this disadvantage, a 3-dB tandem coupler which comprises the two-sectional weakly parallel-coupled lines with equal phase velocity was designed at W-band. The proposed coupler was fabricated using air-bridge technology to monolithically materialize the uniplanar coupler structure instead of conventional multilayer or wire bonded structure. From the measurements, the coupling coefficient of $2.9{\sim}3.6\;dB$ and the good phase difference of $91.2{\pm}2.9^{\circ}$ were obtained in broad frequency range of $75{\sim}100\;GHz$.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2002.11a
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• pp.25-28
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• 2002

In this paper, a micromachined millimeter-wave end-gap band-pass filter (BPF) is presented. The millimeter-wave BPF is designed using 3D design software, Zeland IE3D with the center frequency of 60 GHz, band width of 3 GHz, ripple of 1㏈ and insertion loss of 2.5dB. This type of micromachined BPF can be used in millimeter-wave circuit.

• Journal of the Korea Institute of Military Science and Technology
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• v.15 no.2
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• pp.161-168
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• 2012

In this paper, we have experimentally studied on phase characteristics of airborne radome for ELINT directional finding system, because it is difficult to find theoretical solutions for phase error of the radome. Especially, we described the millimeter wave band radome that was fabricated with cyanate-ester material and its thickness was 2mm. We presented the phase error about millimeter band radome. That phase error is about 30 degrees for parallel and perpendicular polarization in the K-Ka band. That is reasonable value for the ELINT directional finding system.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.335-338
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• 2004

We suggest Q-band MEMS MIMIC (Millimeter wave Monolithic Integrated Circuit) HEMT Oscillator using DAML (Dielectric-supported Airgapped Mcrostrip Line) structure. We elevated the signal lines from the substrate using dielectric post, in order to reduce the substrate dielectric loss and obtain low losses at millimeter-wave frequency. These DAML are composed with heist of $10\;{\mu}m$ and post size with $20\;{\mu}m\;{\times}\;20\;{\mu}m$. The MEMS oscillator was successfully integrated by the process of $0.1\;{\mu}m$ GaAs PHEMTs, CPW transmission line and DAML. The phase noise characteristic of the MEMS oscillator was improved more than 7.5 dBc/Hz at a 1 MHz offset frequency than that of the CPW oscillator And the high output power of 7.5 dBm was measured at 34.4 GHz.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.5 s.335
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• pp.55-60
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• 2005

A V-band MIMIC quadruple subharmonic mixer is reported in this paper. The cascode harmonic generator is proposed for a high conversion gain. The proposed cascode harmonic generator is shown with a 4-th harmonic output characteristic that represents an average of 2.9 dB and a maximum of 4 dB higher than the conventional multiplier. The measured result of the subharmonic mixer has a conversion gain of 3_4 dB which a good conversion gain at a LO power of 13 dBm. Isolations of LO-to-IF and LO-to-RF were obtained -53.6 dB and -46.2 dB, respectively. The conversion gain of the subharmonic mixer in this study has a higher conversion gain compared with some other reports in millimeter-wave range.