• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.348-348
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• 2014

차세대 디스플레이 구동 회로 소자를 위한 재료로서, Amorphous Oxide Semiconductor (AOS)가 주목받고 있다. AOS는 기존의 Amorphous Silicon과 비교하여 뛰어난 이동도를 가지고 있으며, 넓은 밴드 갭에 의한 투명한 광학적 특성을 가지고 있다. 이러한 장점을 이용하여, AOS 박막은 thin film transistor (TFT)의 active channel로 이용 되고 있다. 하지만, AOS를 이용한 TFT의 경우, 시간이 경과함에 따라 $O_2$ 및 $H_2O$ 흡착에 의해 전기적 특성이 변하는 현상이 있다. 이러한 현상은 소자의 신뢰성에 있어 중요한 문제가 된다. 이러한 문제를 연구하기 위해 본 논문에서는, AOS 박막을 이용하여 bottom 게이트형 TFT를 제작하였다. 이를 위해 먼저, p-type Si 위에 건식산화방식으로 $SiO_2$(100 nm)를 성장시켜 게이트 산화막으로 이용하였다. 그리고 Zn과 Sn이 1: 2의 조성비를 가진 ZnSnO (ZTO) 용액을 제조한 후, 게이트 산화막 위에 spin coating 하였다. Splin coating된 용액에 남아 있는 솔벤트를 제거하기 위해 10분 동안 $230^{\circ}C$로 열처리를 한 후, 포토리소그래피와 에칭 공정을 이용하여 ZTO active channel을 형성하였다. 그 후, 박막 내에 남아 있는 불순물을 제거하고 ZTO TFT의 전기적인 특성을 향상시키기 위하여, $600^{\circ}C$의 열처리를 30분 동안 진행 하여 junctionless형 TFT 제작을 완료 하였다. 제작된 소자의 시간 경과에 따른 열화를 확인하기 위하여, 대기 중에서 2시간마다 HP-4156B 장비를 이용하여 전기적인 특성을 확인 하였으며, 이러한 열화는 후처리 공정을 통하여 회복시킬 수 있었다. 열화의 회복을 위한 후처리 공정으로, 퍼니스를 이용한 고온에서의 열처리와 microwave를 이용하여 저온 처리를 이용하였다. 결과적으로, TFT는 소자가 제작된 이후, 시간에 경과함에 따라서 on/off ratio가 감소하여 열화되는 경향을 보여 주었다. 이러한 현상은, TFT 소자의 ZTO back-channel에 대기 중에 있는 $O_2$ 및 $H_2O$의 분자의 물리적인 흡착으로 인한 것으로 보인다. 그리고 추가적인 후처리 공정들에 통해서, 다시 on/off ratio가 회복 되는 현상을 확인 하였다. 이러한 추가적인 후처리 공정은, 열화된 소자에 퍼니스에 의한 고온에서의 장시간 열처리, microwave를 이용한 저온에서 장시간 열처리, 그리고 microwave를 이용한 저온에서의 단 시간 처리를 수행 하였으며, 모든 소자에서 성공적으로 열화 되었던 전기적 특성이 회복됨을 확인 할 수 있었다. 이러한 결과는, 저온임에도 불구하고, microwave를 이용함으로 인하여, 물리적으로 흡착된 $O_2$ 및 $H_2O$가 짧은 시간 안에 ZTO TFT의 back-channel로부터 탈착이 가능함과 동시에 소자의 특성을 회복 가능 함 의미한다.

• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.269-277
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• 1996

The vacuum systems of PLS linac provides average pressure of $2.6\times 10^{-6}$Pa under high power microwave of 54 MW peak with 4.1 $\mu \textrm s$ pulse width and 10 Hz repetition rates. The base pressure of system is$2.4\times 10^{-6}$Pa with 45$^{\circ}C$ cooling water. The outgassing rate of the system is decreased from $3.0\times 10^{-11}Torr-l/sec-\textrm{cm}^2$ at the initial stage after installation to $1\times 10^{-12}Torr-l/sec-\textrm{cm}^2$ at present. Total accumulated microwave energy dose is about 140 GJ per module. All ion pumps are working under saturated regime and effective pumping speeds of 60 I/s, 230 I/s ion pumps are 45 I/s, 65 I/s, 140 I/s under the operating range. Main problems occurred in recent year are troubles of ion pump controller and vacuum gauge controller, vacuum leak of energy doubler window and electron gun ceramic, and water leak in the dummy load of acceleraing columns. Total of 41 troubles with 140. 8 hours down time give good system availability of 98%. Down time can be reduced by high power waveguide valves and water dummy loads under development, and then availability is expected to be increased up to 99.5%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.124-124
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• 2009

We observed the changes of crystal structure of Rubrene (5,6,11,12-tetraphenylnaphthacene) polycrystal thin films at various in situ substrate temperature and process by scanning electron microscope(SEM), x-ray diffraction (XRD) and near-field microwave microprobe (NFMM). Amorphous rubrene thin film was initially obtained on 200 nm thick $SiO_2/Si$ substrate at 35 $^{\circ}C$ in a vacuum evaporation but in situ long time postannealing at the temperature 80 $^{\circ}C$ transformed the amorphous phase into crystalline. Four heating conditions are followed : (a) preheating (b) annealing (c) preheating, annealing (d) preheating, cooling(35 $^{\circ}C$), annealing. We have obtained the largest polycrystal disk in sample (c). But the highest crytallity and conductivity of the rubrene thin films were obtained in sample (d).

• Journal of the Korean Vacuum Society
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• v.18 no.3
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• pp.229-235
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• 2009

Millimeter-scale aligned arrays of thin-multiwalled carbon nanotube (t-MWCNT) on layered Si substrates have been synthesized by oxygen-assisted microwave plasma chemical vapor deposition (MPCVD). We have succeeded in growth of vertically aligned MWCNTs up to 2.7 mm in height for 150 min. The effect of $O_2$ and water vapour on growth rate was systematically investigated. In the case of $O_2$ gas, the growth rate was ${\sim}22{\mu}m/min$, which is outstanding growth rate comparing with those of conventional thermal CVD (TCVD). Scanning electron microscope (SEM), energy-dispersive spectroscopy (EDS), and Raman spectroscopy were used to analyze the CNT morphology, composition and growth mechanism. The role of $O_2$ gas during the CNT growth was discussed on.

• Research in Plant Disease
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• v.27 no.1
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• pp.8-16
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• 2021

This study was conducted to check the sterilization efficacy of microwave plasma (MWP) against the watermelon seeds infected with Acidovorax citrulli 11-251. Watermelon seeds were artificially vacuum inoculated to produce A. citrulli 11-251 infected seeds. Aac ImmunoStrip and scanning electron microscope (SEM) results suggests that, seeds (coat and endosperm) were infected under the concentration of 1×107/30 min. MWP sterlization process was carried out at 50 W (3 min, 5 min, and 10 min), 80 W (3 min, 5 min, and 10 min), and 100 W (3 min, 5 min, and 10 min). According to the results, MWP sterilized the artificially inoculated seed coats by 95.96% at 80 W/10 min and seed endosperms by 100% at 100 W/10 min respectively. Although, seeds were sterlized by MWP, germination rate of seeds were low as compared to non treated (negative control) seeds. Moreover, cell membrane of A. citrulli 11-251 was damaged while observed in SEM after sterilized with MWP. Further studies regarding the appropriate sterilization condition by MWP against A. citrulli infected seeds for germination will be conducted in our next study.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.185.1-185.1
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• 2016

Cutoff probe, diagnostics instrument for plasma density, have been received an extensive attention due to simple, robust and lowest assumption. Although the cutoff probe has a long history, physical model is limited in low density plasma. For that reason, we propose a novel transmission line model of cutoff probe for precise measurement of high density plasma. In addition simplified circuit model can be obtained from transmission line model. It can explain simply physics of cutoff probe in high density plasma.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.182.2-182.2
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• 2016

Hollow cathode discharge(중공 음극)는 음극 표면에서 발생되는 2차 전자를 이용하여 높은 밀도의 플라즈마를 만들 수 있는 장점이 있다. 전원으로 microwave, RF, DC, pulsed dc등을 사용할 수 있으며 박막의 증착, 식각 등에 응용 가능하다. 물리적 현상으로는 중공 음극 재료 표면 물질의 가열 및 이온 스퍼터링, 2차 전자의 가열, 자기장 인가 구조의 경우 전자 거동이 있다. PIC(particle-in-cell)방식의 모델링과 fluid model을 이용한 방법이 있는데 본 연구에서는 상용 fluid model software인 ESI사의 CFD-ACE+를 사용하여 모델링 하였다. 구동 주파수는 13.56 MHz의 상용 고주파 전원과 보다 낮은 1 MHz, 100 kHz의 수치 모델을 이용하여 HF, MF, LF 영역에서의 동작 특성을 해석하였다. 1차적으로는 가스 유동의 특성을 2D, 3D로 조사하였고 플라즈마 거동은 2차원을 주로 진행하였으며 계산 시간이 오래 거리는 3차원 모델을 하나 만들어 그 특성을 조사하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.376-376
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• 2016

Poly(ethylene oxide) (PEO)/functionalized bacterial cellulose nanowhiskers (f-BCNW) (0.1 wt%) composite nanofibers were fabricated by electrospinning process and the thermomechanical properties were significantly enhanced more than the PEO and PEO/bacterial cellulose nanowhiskers (BCNW) (0.1 wt%) composite nanofibers. The functionalization of BCNW (f-BCNW) was performed by microwave plasma treatment for effects of nitrogen functionalization of chemically-driven BCNW. The N-containing functional groups of f-BCNW enhanced chemical bonding between the hydroxyl groups of the polymer chains in the PEO matrix and diameter size of PEO/f-BCNW (0.1 wt%) composite nanofibers were decreased more than PEO and PEO/BCNW (0.1 wt%) composite nanofibers on the same concentration. The strong interfacial interactions between the f-BCNW nanofillers and polymer matrix were improved the thermomechanical properties such as crystallization temperature, weight loss and glass transition temperature (Tg) compared to PEO and PEO/BCNW composites nanofibers. The results demonstrated that N2 plasma treatment of BCNW is very useful in improving thermal stability for bio-applications.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.167-170
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• 1998

To apply diamond films in microelectromechanical systems(MEMS), it is necessary to develop the patterning technologies of diamond films in the micrometer scale. In this paper, three different kinds of technologies for patterning CVD diamond films carried out by us were demonstrated: selective growth by improved diamond nucleation in DC bias-enhanced microwave plasma chemical vapor deposition (MPCVD) system, selective growth of seeding using diamond-particle-mixed photoresist, and selective etching of oxygen ion beam using Al as the mask. It was show that high selectivity and precise patterns had been achieved, and all the processes were compatible with IC process.

• Proceedings of the Korean Vacuum Society Conference
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• 2002.06a
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• pp.109-109
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• 2002