• Title/Summary/Keyword: microwave surface resistance

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Formability of Non-Vinyl Pre-coated Metal Sheet (Non-Vinyl Pre-coated Metal재의 성형성에 관한 연구)

  • Kim, Dong-Hwan;Kim, Byung-Min
    • Journal of the Korean Society for Precision Engineering
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    • v.18 no.4
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    • pp.121-128
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    • 2001
  • This study has been performed to investigate formability of non-vinyl PCM(pre-coated metal)sheet. First, physical test of PCM sheets were tested to evaluate finish coating characteristic of PCM. And then, test equipment was made for friction test and three non-vinyl PCM sheets were tested by straight pulling method. This paper provides the results of the friction tests showing the influence of sheet surface texture and process conditions. It was found that the influence of contact pressure and speed had an effect upon the level of friction. Also using tests, the scratch resistance of a series of polyester coating has been investigated. This investigation aims to clarify the process conditions that prevent the scratch of PCM to form the good electrical appliances such as microwave oven, air conditioner and refrigerator etc.

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A Comparative Study on the Effective Surface Resistance of High-$T_c$ Superconductor Films as Measured by Using the S-parameter Circle-fit and the Lorentzian-fit Methods (S-parameter Circle-fit과 Lorentzian-fit 방법으로 측정된 고온초전도체 박막의 유효표면저항 비교)

  • Kim, Min-Jeong;Jung, Ho-Sang;Lee, J.H.;Lee, Sang-Young
    • Progress in Superconductivity
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    • v.9 no.2
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    • pp.146-151
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    • 2008
  • Measurements of surface resistance ($R_s$) of high temperature superconductor (HTS) films with accuracy are essential for microwave applications of HTS materials. In using the dielectric resonator method, uncertainties in the unloaded quality factor of the resonator cause significant errors in the measured $R_s$ of HTS films. We compare the Rs values of $YBa_2Cu_3O_{7-{\delta}}$ films calculated from the $Q_0$ as determined from the Lorentzian fit with that from the $Q_0$ as determined from the S-parameter circle-fit at temperatures between 15 K and 77 K. The two sets of values appeared to differ by 5%, 7%, 6%, and 11% at temperatures of 15, 60, 70, and 77 K, respectively, from each other, implying that careful error analysis needs to be performed in obtaining the $R_s$ of HTS films by using the Lorentzian-fit method, with the ones determined from the S-parameter circle-fit used as the reference.

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A Comparative Study for the Microwave Surface Resistances of $YBa_2$$Cu_3$$O-{7-$\delta$}$ Films Measured with a Microstrip Resonator and a Inutile-loaded Cavity Resonator (마이크로스트립 공진기와 Rutile-loaded Cavity 공진기로 측정한 $YBa_2$$Cu_3$$O-{7-$\delta$}$박막의 마이크로파 표면저항 비교 연구)

  • O. K. Kwon;H. J. Kwon;Lee, J. H.;Jung Hur;Lee, Sang-Young
    • Progress in Superconductivity
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    • v.2 no.2
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    • pp.86-91
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    • 2001
  • Temperature dependences of the unloaded Q(Q$_{0}$) and the resonant frequency ( $f_{0}$) of YB $a_2$C $u_3$ $O_{7-{\delta}}$ (YBCO) microstrip ring resonators and rutile-loaded cylindrical cavity resonators were measured at low temperatures. Dc magnetron-sputtered YBCO films grown on Ce $O_2$-buffered r-cut sapphire (CbS) substrates were used fur this purpose. The surface resistances ( $R_{s}$) of YBCO films measured by both a microstrip ring resonator and a TE $01\delta$/ mode rutile-loaded cylindrical cavity resonator are compared with each other. It turned out that the values of $R_{s}$ measured by the microstrip resonator technique are comparable to those by the rutile-loaded resonator technique at temperatures lower than ~50 K. However, above 50 K, the $R_{s}$ measured by the microstrip resonator technique appeared higher according to the temperature. Our results show that the current crowding effects near the edge of a microstrip resonator become more significant at temperatures near the critical temperature.emperature.e.e.e.e.e.e.

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Effect of FTO coated on stainless steel bipolar plate for PEM fuel cells

  • Park, Ji-Hun;Jang, Won-Yeong;Byeon, Dong-Jin;Lee, Jung-Gi
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.05a
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    • pp.55.2-55.2
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    • 2009
  • A polymer electrolyte membrane (PEM) fuel cell has been getting large interest as a typical issue in useful applications. The PEMFC is composed of a membrane, catalyst and the bipolar plate. SnOx:F films on SUS316 stainless steel were prepared as a function of substrate with using electron cyclotron resonance-metal organic chemical vapor deposition (ECR-MOCVD) in order to achieve the corrosion-resistant and low contact resistance bipolar plates for PEM fuel cells. The SnOx:F films coated on SUS316 substrate at surface plasma treatment for excellent stability, before/after heat treatment for good crystalline structure and microwave power for were characterized by X-ray diffraction (XRD), auger electron microscopy (AES) and field emission-scanning electron microscopy (FE-SEM). The SnOx:F film coated on SUS316 substrate with various process parameters were able to observe optimum interfacial contact resistance (ICR) and corrosion resistance. It can be concluded that fluorine-doping content plays an important function in electrical property and characteristic of corrosion-protective film.

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Accurate Measurements of the Unloaded Q of a Dielectric-loaded High-Q $TE_{01{\delta}}$ mode Cavity Resonator with HTS Endplates

  • Kwon, H.J.;Hur, Jung;Lee, Sang-Young
    • Progress in Superconductivity
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    • v.1 no.1
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    • pp.36-41
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    • 1999
  • Methods for mode identification and accurate measurements of the unloaded Q ($Q_0$) of a dielectric-loaded $TE_{01{\delta}}$ mode cavity resonator with HTS endplates are proposed. A resonator with a sapphire rod and $YBa_2Cu_3O_{7-x}$(YBCO) endplates was prepared and its microwave properties were studied at temperatures above 30 K. The $TE_{01{\delta}}$ mode $Q_0$ of the resonator, designed to work as a tunable resonator with variations in the gap distance (s) between the sapphire rod and the top YBCO, was more than 1000000 at s = 0 mm and at 30 K with the resonant frequency of 19.56 GHz. The $TE_{01{\delta}}$ mode $Q_0$ decreases as s increases for s < 2 mm until mode couplings between the $TE_{01{\delta}}$ mode and other modes appeared at s = 2 mm. Significant dependence of the $TE_{01{\delta}}$ mode $Q_0$ on the input and output coupling constants was also observed. Applications of the open-ended $TE_{01{\delta}}$ mode cavity resonator for a tunable resonator with a very high Q as well as a characterization tool for the surface resistance measurements of HTS films are described.

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Optical and Electrical Properties of Fluorine-Doped Tin Oxide Prepared by Chemical Vapor Deposition at Low Temperature (저온 증착된 불소도핑 주석 산화 박막의 광학적·전기적 특성)

  • Park, Ji Hun;Jeon, Bup Ju
    • Korean Journal of Materials Research
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    • v.23 no.9
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    • pp.517-524
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    • 2013
  • The electrical and optical properties of fluorine-doped tin oxide films grown on polyethylene terephthalate film with a hardness of 3 using electron cyclotron resonance plasma with linear microwave of 2.45 GHz of high ionization energy were investigated. Fluorine-doped tin oxide films with a magnetic field of 875 Gauss and the highest resistance uniformity were obtained. In particular, the magnetic field could be controlled by varying the distribution in electron cyclotron deposition positions. The films were deposited at various gas flow rates of hydrogen and carrier gas of an organometallic source. The surface morphology, electrical resistivity, transmittance, and color in the visible range of the deposited film were examined using SEM, a four-point probe instrument, and a spectrophotometer. The electromagnetic field for electron cyclotron resonance condition was uniformly formed in at a position 16 cm from the center along the Z-axis. The plasma spatial distribution of magnetic current on the roll substrate surface in the film was considerably affected by the electron cyclotron systems. The relative resistance uniformity of electrical properties was obtained in film prepared with a magnetic field in the current range of 180~200A. SEM images showing the surface morphologies of a film deposited on PET with a width of 50 cm revealed that the grains were uniformly distributed with sizes in the range of 2~7 nm. In our experimental range, the electrical resistivity of film was able to observe from $1.0{\times}10^{-2}$ to $1.0{\times}10^{-1}{\Omega}cm$ where optical transmittance at 550 nm was 87~89 %. These properties were depended on the flow rate of the gas, hydrogen and carrier gas of the organometallic source, respectively.

The Study of Near-field Scanning Microwave Microscope for the Nondestructive Detection System (비파괴 측정을 위한 근접장 마이크로파 현미경 연구)

  • Kim, Joo-Young;Kim, Song-Hui;Yoo, Hyun-Jun;Yang, Jong-Il;Yoo, Hyung-Keun;Yu, Kyong-Son;Kim, Seung-Wan;Lee, Kie-Jin
    • Journal of the Korean Society for Nondestructive Testing
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    • v.24 no.5
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    • pp.508-517
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    • 2004
  • We described a near-field scanning microwave microscope which uses a high-quality dielectric resonator with a tunable screw. The operating frequency is f=4.5 5GHz. The probe tip is mounted in a cylindrical resonant cavity coupled to a dielectric resonator We developed a hybrid tip combining a reduced length of the tapered part with a small apex. In order to understand the function of the probe, we fabricated three different tips using a conventional chemical etching technique and observed three different NSMM images for patterened Cr films on glass substrates. We measured the reflection coefficient of different metal thin film samples with the same thickness of 300m and compared with theoretical impedance respectly. By tuning the tunable screw coming through the top cover, we could improve sensitivity, signal-to-noise ratio, and spatial resolution to better than $1{\mu}m$. To demonstrate the ability of local microwave characterization, the surface resistance of metallic thin films has been mapped.

Comparative Study for the Unloaded Quality Factors of High-Tc Superconductor-Dielectric Resonators Measured by Using S-parameter Circle-fit Method and Lorentzian-fit Method (S-parameter circle fit 방법과 Lorentzian fit 방법으로 측정된 고온초전도 유전체 공진기의 Unloaded Quality Factor 비교)

  • Kim, M.J.;Lee, J.H.;Park, E.K.;Yang, W.I.;Jung, H.S.;Choi, Y.O.;Lee, S.Y.
    • Progress in Superconductivity
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    • v.8 no.2
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    • pp.143-151
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    • 2007
  • Accurate measurements of the microwave surface resistance (Rs) of high temperature superconductor (HTS) films are important with regard to applications of HTS materials for wireless communications. As the surface resistance values of HTS films are usually extracted from the measured unloaded quality factor ($Q_0$) of resonators made of HTS films, it is essential to measure the resonator $Q_0$ with accuracy. The $TE_{011}\;mode\;Q_0$ of sapphire resonators with the endplates made of $YBa_2Cu_3O_{7-{\delta}}$(YBCO) film on $LaAlO_3$ is measured by using the S-parameter circle-fit method at a frequency of about 19.6 GHz and temperatures of 30 K to 90 K, which is compared with the measured values by using the Lorentzian-fit method. Good agreements are found between the two sets of $Q_0$ values measured by using the two different methods whether the resonator is used in a weak-coupling scheme or a strong-coupling scheme, showing reliability of both methods fur measuring the resonator $Q_0$ accurately. The $Q_0$ of sapphire resonators with a gap between the top plate and the rest of the resonator is also discussed.

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Characteristics of Low Dielectric Constant SiOF Thin Films with Post Plasma Treatment Time (플라즈마 후처리 시간에 따른 저유전율 SiOF 박막의 특성)

  • 이석형;박종완
    • Journal of the Korean Vacuum Society
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    • v.7 no.3
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    • pp.167-272
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    • 1998
  • The fluorine doped silicon oxide (SiOF) intermetal dielectric (IMD) films havc been of interest due to their lower dielectric constant and compatibility with existing process tools. However, instability issues related to hond and increasing dielectric constant due to water absorption when the SiOF film was exposured to atmospheric ambient. Therefore, the purpose nf this research is to study the effect of post oxygen plasma treatment on the resistance of nioisture absorption and reliability of SiOF film. Improvement of moisture ahsorption resistance of SiOF film is due to the forming of thin $SiO_2$ layer at the SiOF film surface. It is thought that the main effect of the improvement of moisture absorption resistance was densification of the top layer and reduction in the numher of Si-F honds that tend to associate with OH honds. However, the dielectric constant was inucased when plasma treatment time is above 5 min. In this study, therefore, it is thought that the proper plasma treatment time is 3 min when plasma treatment condition is 700 W of microwave power, 3 mTorr of process pressure and $300^{\circ}C$ of substrate temperature.

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