• 한국세라믹학회지
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• 제32권8호
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• pp.865-872
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• 1995

Ultra-fine $\beta$-SiC powders were fabricated by self-propagating high temperature synthesis process (SHS) using microwave oven. The flexural strength, fracture toughness, and hardness of hot pressed sample at 200$0^{\circ}C$ for 60 min using synthesized SiC powders, which had 2 wt% of Al2O3 and 2.5 wt% of B4C content, showed 438 MPa, 4.15MPa.m1/2 and 28 GPa, respectively. The highest strength, fracture toughness, and hardness of composites containing 4wt% of Al2O3, which had highest relative density of 99.9%, showed 458 MPa, 4.6MPa.m1/2 and 36.2 GPa, respectively.

• 대한전기학회논문지
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• 제43권3호
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• pp.442-446
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• 1994

In this study, microwave dielectric properties of 0.182BaO-0.818TiOS12T ceramics were investigated with sintering temperature and annealing time, and the application for the microwave dielectric resonator was studied. In the specimen simtered at 1400[$^{\circ}C$], dielectric constant, unloaded Q and temperature coefficient of resonant frequency had good values of 35.36, 5692, -4.43[ppm/$^{\circ}C$], respectively. The specimen which temperature coefficient of resonant frequency($\tau$f) was vared positive to negative value was selected, thereafter microwave dielctric properties was investigated with annealing time(0~4[hr]) in the fixed annealing temperature of 1350[$^{\circ}C$]. Increasing the annealing time, dielectric constant and unloaded Q were increased and temperature coefficient of resonant frequency was decreased.

• 한국세라믹학회지
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• 제41권10호
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• pp.783-787
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• 2004

[ $Ba_5Nb_4O_{15}$ ] 세라믹스의 소결 온도를 낮추기 위하여 $PbO-B_2O_3-SiO_2$계 glass frit를 $0.5\~10w\%$ 첨가하고 소결 조건 변화에 따른 마이크로파 유전특성과 미세구조를 조사하였다. $Ba_5Nb_4O_{15}$ 유전체의 소결 밀도와 마이크로파 유전특성은 액상 소결조제로서 첨가한 glass frit의 첨가량에 따라 크게 변화하였다. $PbO-B_2O_3-SiO_2$계 glass frit을 $3wt\%$ 첨가하고 $900^{\circ}C$에서 2시간 소결한 시편은 유전상수(K) 41.4, 품질계수(Q$\times$f) 13,485 GHz, 공진주파수 온도계수(TCF) 9 ppm/$^{\circ}C$의 마이크로파 유전특성을 나타내었다. 또한, 상기 조성의 유전체 재료는 Ag 전극과의 동시소결에도 물리, 화학적 반응이 없어 적층형 유전체 필터 재료로서 적합한 재료라고 판단된다.

• 한국세라믹학회지
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• 제41권2호
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• pp.165-169
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• 2004

$Zn_{1-x}(Li_{1/2}La_{1/2})_xTiO_3$ ($0.01{\leq}x{\leq}0.05$)세라믹스에 $H_3BO_3$를 4 wt% 첨가 후 $(Li_{1/2}La_{1/2})^{2+}$ 치환량 변화에 따른 저온 소결 거동 및 마이크로파 유전특성을 고찰하였다. 저온 소결첨가제인 H$_3$BO$_3$를 4 wt% 첨가하여 소결온도를 $1150^{\circ}C$에서 $875^{\circ}C$로 낮출 수 있었으며, 치환량 변화에 따른 유전상수와 공진주파수 온도계수(TCF)의 변화는 존재상의 유전체 혼합 법칙(dielectric mixing rule)에 의존하였고, 품질계수(Qf)는 소결 시편의 밀도와 미세구조에 의존하여 변화되었다 $875^{\circ}C$에서 3시간 소결한 경우 x=0.03에서 K=26.5, Qf=19,030 GHz, TCF=7.5 ppm$/^{\circ}C$를 얻을 수 있었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1293_1294
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• 2009

The sintering and high frequency electro-magnetic properties of Ba-hexagonal ferrite were investigated. All samples of the Ba-hexagonal ferrite were prepared by the conventional mixed oxide method and sintered at $1150^{\circ}C$~$1400^{\circ}C$. From the X-ray diffraction patterns of sintered Ba-hexagonal ferrite, the $Ba_3Co_2Fe_{24}O_{41}$ phase was represented as main phase in the almost sintering conditions. The bulk densities with sintering temperature and decreased at $1400^{\circ}C$. The permittivity ($\varepsilon$') and loss tangent of permittivity ($\varepsilon$"/$\varepsilon$') of $Ba_3Co_2Fe_{24}O_{41}$ ceramics increased and decreased with sintering temperature, respectively. The permeability of $Ba_3Co_2Fe_{24}O_{41}$ ceramics decreased with sinteirng temperature. The loss tangent of permeability was not changed compared each other with sintering temperature. The bulk density of $Ba_3Co_2Fe_{24}O_{41}$ ceramics sintered at $1300^{\circ}C$ was 4.79 g/$cm^3$. The permittivity, loss tangent of permittivity and permeability, loss tangent of permeability were 19.896, 0.1718 and 14.218, 0.2046 at 210 MHz, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 추계학술대회 논문집 전기물성,응용부문
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• pp.98-100
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• 2003

The microwave dielectric properties and microstructure of the $0.7Mg_4Ta_2O_9-0.3CaTiO_3$ ceramics were investigated. All sample of the $0.7Mg_4Ta_2O_9-0.3CaTiO_3$ ceramics were prepared by conventional mixed oxide method. The sintering temperature was $1375^{\circ}C{\sim}1450^{\circ}C$. The structural properties of the $0.7Mg_4Ta_2O_9-0.3CaTiO_3$ ceramics were investigated by X-ray diffractormeter. According to the X-ray diffraction patterns of the $0.7Mg_4Ta_2O_9-0.3CaTiO_3$ ceramics, the major phase of the hexagonal $Mg_4Ta_2O_9$ were presented. In the case of the $0.7Mg_4Ta_2O_9-0.3CaTiO_3$ ceramics sintered at $1425^{\circ}C$, density, dielectric constant, quality factor were $5.799g/cm^2$, 23.26, 40,054 GHz, respectively.

• Advances in materials Research
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• 제3권2호
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• pp.105-116
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• 2014

The microwave dielectric properties of $CeO_2$ nanoparticles (0.5, 1.0 & 1.5wt%) doped $Mg_2TiO_4$ (MTO) ceramics have been investigated at cryogenic temperatures. The XRD patterns of the samples were refined using the full proof program reveal the inverse spinel structure without any secondary phases. The addition of $CeO_2$ nanoparticles lowered the sintering temperature with enhancement in density and grain size as compared to pure MTO ceramics. This is attributed to the higher sintering velocity of the fine particles. Further, the microwave dielectric properties of the MTO ceramics were measured at cryogenic temperatures in the temperature range of 6.5-295 K. It is observed that the loss tangent ($tan{\delta}$) of all the samples increased with temperature. However, the $CeO_2$ nanoparticles doped MTO ceramics manifested lower loss tangents as compared to the pure MTO ceramics. The loss tangents of the pure and MTO ceramics doped with 1.5 wt% of $CeO_2$ nanoparticles measured at 6.5K are found to be $6.6{\times}10^{-5}$ and $5.4{\times}10^{-5}$, respectively. The addition of $CeO_2$ nanoparticles did not cause any changes on the temperature stability of the MTO ceramics at cryogenic temperatures. On the other hand, the temperature coefficient of the permittivity increased with rise in temperature and with the wt% of $CeO_2$ nanoparticles. The obtained lower loss tangent values at cryogenic temperatures can be attributed to the decrease in both intrinsic and extrinsic losses in the MTO ceramics.

• 마이크로전자및패키징학회지
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• 제10권1호
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• pp.57-63
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• 2003

$BaO-Nd_2O_3-TiO_2$계 유전체 세라믹스에 lithium borosilicate계 유리를 첨가하여 저온소결특성과 마이크로파 유전특성을 조사하였다. 유리 프릿을 10∼l3 wt%의 범위로 첨가함으로서 순수한 $BaO-Nd_2O_3-TiO_2$계 세라믹스의 소결온도($1300^{\circ}C$)보다 현저히 낮은 850∼$900^{\circ}C$의 온도범위에서 상대밀도 97%이상의 소결체를 얻을 수 있었다. 10 wt%의 유리 프릿을 첨가함으로서 85$0^{\circ}C$의 소성온도에서 유전율($\epsilon_r$)54 및 품질계수($Q{\times}f$)2400 GHz그리고 공진주파수의 온도계수($\tau_f$)는 $+8ppm/^{\circ}C$으로서 우수한 유전 특성을 가지는 소결체를 얻을 수 있었다.

• 한국전기전자재료학회논문지
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• 제28권7호
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• pp.428-432
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• 2015

Sintering and microwave dielectric properties of $Zn_{2-2x}Si_{1+x}O_4$ (x=0~0.10) ceramics were investigated. The secondary phase of ZnO was observed in the specimen for x=0 whereas $SiO_2$ was detected in that for x=0.05. The composition of $Zn_2SiO_4$ might be close to x=0.02, i.e., $Zn_{1.96}Si_{1.02}O_4$; the ratio of Zn/Si is 1.922. The insufficient grain growth was observed in the specimen of x=0. For the specimens of $x{\geq}0.05$, the grain growth sufficiently occurred through the liquid phase sintering. The value of quality factor of all specimens was dependent on the x value, i.e., the ratio of Zn/Si, whereas that of dielectric constant was independent. Relative density, dielectric constant, and quality factor ($Q{\times}f$) of the specimen for x=0.05, i.e., $Zn_{1.9}Si_{1.05}O_4$, sintered at $1,400^{\circ}C$ were 96.5%, 6.43, and 115,166 GHz, respectively.

• Advances in materials Research
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• 제2권3호
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• pp.133-140
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• 2013

This paper aims to focus on the microwave processing of thick films which is a fast, cheap technique and could be the alternative to the currently used conventional high temperature processing technique. Microwave processing has gained worldwide acceptance as a novel method for heating and sintering a variety of materials, as it offers specific advantages in terms of speed, energy efficiency, process simplicity, finer microstructures and lower environmental hazards. Silver conducting thick films were prepared and processed in the household microwave oven. The films sintered at different time period by keeping the other parameter such as microwave power, film thickness etc constant. The microstructure analysis revealed that the surface morphology of the microwave processed films become compact with respect to the processing time. The sheet resistance for microwave sintered silver films is in the range of 0.003 to $1.207{\Omega}/{\Box}$ where as the films fired at 750 and $850^{\circ}C$ showed the resistance of 0.009 and $0.003{\Omega}/{\Box}$ which can be comparable. The results revealed that the microstructure of the microwave sintered films has more uniform and compact surface than that of the conventionally fired films. The paper reports upon the preparation of silver thick film by screen printing technique and processing the same by microwave which also compared with the conventionally processed thick films.