• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.6
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• pp.835-840
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• 1993

In this paper a FET mixer is designed realized by small-signal S-parameter using microwave CAD, LINMIC + at Ku-band. The mixer has conversion gain 9.88dB at 14GHz RF, 1GHz IF, and + 1dBm LO imput. The maximum conversion gain is obtained 11.71dB at 1.1GHz. The result shows that the FET mixer does not need pre-and/or IF amplifier. The mixer maintains the desired conversion gain with low LO power level. The conversion gain of the mixer is higher than the available gain of a amplifier, which is experimentally verified.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.4 s.107
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• pp.387-392
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• 2006

In this paper, measurement scheme and uncertainty estimation of the K-band attenuation standard fitted with 3.5 mm coaxial connectors are described. The standard comprises a build-up chain of four steps of power ratio mea-surement and operates in the frequency range of 18 GHz to 26.5 GHz. The nominal attenuation of each step is around 20 dB and total dynamic range is 80 dB. The expanded uncertainty of the overall system is 0.01 dB at the confidence level of approximately 95%.

• Nuclear Engineering and Technology
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• v.54 no.2
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• pp.442-448
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• 2022

Intermediate-level radioactive waste (ILW) is not subject to legal approval for cave disposal in Korea. To solve this problem, a spent resin treatment device that separates ¹⁴C-containing resin from zeolite/activated carbon and desorbs ¹⁴C through a microwave device has been developed. In this study, we evaluated the radiological safety of the operators performing repair work in the event of a failure in such a device treating 1 ton of spent resin mixture per day. Based on the safety evaluation results, it is possible to formulate a design plan that can ensure the safety of workers while developing a commercialized device. When each component of the resin treatment device can be repaired from the outside, the maximum and minimum allowable repair times are calculated as 263.2 h and 27.7 h for the ¹⁴C-detached resin storage tank and zeolite/activated carbon storage tank, respectively. For at least 6 h per quarter, the worker's annual dose limit remains within 50 mSv/year; further, over 5 years, it remained within 100 mSv. At least 6 h of repair time per quarter is considered, under conservative conditions, to verify the radiological safety of the worker during repair work within that time.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.1 s.116
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• pp.37-43
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• 2007

In this.paper, we introduce design and implementation results of the single balanced diode mixer for European point-to-point microwave radio in order to improve flatness performance. When a resonator such as RF filter is integrated with a mixer, impedance characteristic of 50 ohm is maintained only in RF band, not in LO band resulting deterioration of flatness performance because of LO power variation on the diode. In the paper, we suggest a design method of mixer integrated with image rejection filter and LO harmonic filter to have a better performance of flatness using embedding electrical length between filter and mixer's port. Frequency specification of fabricated mixer is $21.2{\sim}22.6\;GHz$ for RF, $19.32{\sim}20.72\;GHz$ for LO and 1.88 GHz+/-50 MHz for IF, respectively. Measured results show conversion loss of 8.5 dB, flatness of 2 dB, input PldB of 8 dBm, IIP3 of 15 dBm under LO power level of 10 dBm. Return losses of RF, LO and IF port are under -12 dB, -10 dB and -5 dB, respectively. Isolations of LO/RF and LO/IF are 20 dB and 50 dB, respectively.

• Asia-pacific Journal of Multimedia Services Convergent with Art, Humanities, and Sociology
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• v.9 no.6
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• pp.711-718
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• 2019

Spectrum analyzer and electromagnetic field meter were used to investigate the EM generation behaviour in different types of home electrical appliances. During microwave oven operation, the EM power measured at a point 30cm apart was measured in the range of 8~11mW/㎡, the strength of the low frequency magnetic field was 60~80mG and the electric field strength was measured at 150~160V/m. For smart phone wireless charging pad, it was measured at an electromagnetic power of 0.4mW/㎡, an electric field of 160 V/m and a magnetic field of 1mG at a point 10cm away. For microwave oven and wireless charging pad, if used within 10cm, the size of the electric field has been measured at a large value that exceeds the human body protection standard and may be hazardous to humans. On the other hand, home appliances such as TVs, hairdryers and refrigerators all showed very low levels of electromagnetic waves, electric fields and magnetic fields, with no harmful effects seen. For electromagnetic shielding, the metal Cu fabric and metal foil had a high level of EM shielding, while polymer films had a low EM shielding characteristic.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.6
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• pp.449-456
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• 2018

Herein, several multibeam forming methods that can be applied to microwave wireless power transmission are presented. Because the conventional multibeam forming methods do not consider an active element pattern(AEP), an intended beam shape will contain a steering angle error when applied to an actual system. To solve this problem, a method of considering the average of the AEP and a method of considering all the AEPs by the modified Fourier series method have been proposed. We confirmed that the proposed method reduces the error with the intended beam shape in the multibeam formation. In addition, for the side lobe level(SLL) and null control, a method of multibeam forming by applying the superposition principle to the Dolph-Tschebyscheff method is proposed. We also confirmed that SLL control can be simultaneously achieved with the multibeam formation.

• Radiation Oncology Journal
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• v.8 no.1
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• pp.7-15
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• 1990

The ultimate objective of our experiment is to obtain the precise distribution of temperature in malignant tumors occurring in cerebral parenchyme of human beings when we will carry out interstitial hyperthermia in the near future. To achieve this purpose, first of all, it is necessary to make an attempt at performing interstitial hyperthermia in vivo under the similar condition of human beings. Therefore, we chose cats as materials much alike tissue characteristics of human beings. Moreover, it is also necessary to get the basic data from dynamic phantom in order to standardize and compare results obtained from interstitial hyperthermia carried out in cats. By having performed these experiments we got the following results. 1) On doing interstitial hyperthermia with 915 MHz microwave, the possible treated volume was 2 cm by 2 cm by 6 cm according to $50\%$ specific absorption rate (SAR). 2) The distribution of temperature within non-circulated static phantom was much the same as power density in air, but we observed that the temperature, within $5\~10$ minutes, rose to more higher than $55^{\circ}C$ not measured with Ga-As fiberoptic thermistor which was not impeded by microwave after performing interstitial hyperthermia. 3) Within dynamic phantom in which normal saline was circulating, temperature reached steady state which was maintained for more than 45 minutes through transit period in 5 minutes after starting interstitial hyperthermia. 4) When we interrupted circulation in the dynamic phantom, we observed that temperature rose to the same level as in the static phantom. 5) We could carry out interstitial hyperthermia safely when we used the generating power below 5 watts. Abrupt interruption of circulation caused a rapid increase in temperature. Times taking to rise to maximum $55^{\circ}C$ were 15.2 minutes (SE 0.4),9.7 minutes (SE 0.3), and 6.3 min-utes (SE 0.4) respectively with generating powers of 5,10, and 15 watts.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.11
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• pp.1-8
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• 2011

One of the most important parameters that limit maximum output power of transistor is breakdown. InAlAs/InGaAs/GaAs Metamorphic HEMTs (MHEMTs) have some advantages, especially for cost, compared with InP-based ones. However, GaAs-based MHEMTs and InP-based HEMTs are limited by lower breakdown voltage for output power even though they have good microwave and millimeter-wave frequency performance with lower minimum noise figure. In this paper, InAlAs/$In_xGa_{1-x}As$/GaAs MHEMTs are simulated and analyzed for breakdown. The parameters affecting breakdown are investigated in the fabricated 0.1-${\mu}m$ ${\Gamma}$-gate MHEMT device having the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As$ heterostructure on the GaAs wafer using the hydrodynamic transport model of a 2D commercial device simulator. The impact ionization and gate field effect in the fabricated device including deep-level traps are analyzed for breakdown. In addition, Indium mole-fraction-dependent impact ionization rates are proposed empirically for $In_{0.52}Al_{0.48}As/In_xGa_{1-x}As$/GaAs MHEMTs.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.4
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• pp.443-451
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• 2010

This paper describes a fully integrated CMOS low-IF mobile-TV RF tuner for Band-III T-DMB/DAB applications. All functional blocks such as low noise amplifier, mixers, variable gain amplifiers, channel filter, phase locked loop, voltage controlled oscillator and PLL loop filter are integrated. The gain of LNA can be controlled from -10 dB to +15 dB with 4-step resolutions. This provides a high signal-to-noise ratio and high linearity performance at a certain power level of RF input because LNA has a small gain variance. For further improving the linearity and noise performance we have proposed the RF VGA exploiting Schmoock's technique and the mixer with current bleeding, which injects directly the charges to the transconductance stage. The chip is fabricated in a 0.18 um mixed signal CMOS process. The measured gain range of the receiver is -25~+88 dB, the overall noise figure(NF) is 4.02~5.13 dB over the whole T-DMB band of 174~240 MHz, and the measured IIP3 is +2.3 dBm at low gain mode. The tuner rejects the image signal over maximum 63.4 dB. The power consumption is 54 mW at 1.8 V supply voltage. The chip area is $3.0{\times}2.5mm^2$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.68.1-68.1
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• 2012

The best part of graphene is - charge-carriers in it are mass less particles which move in near relativistic speeds. Comparing to other materials, electrons in graphene travel much faster - at speeds of $10^8cm/s$. A graphene sheet is pure enough to ensure that electrons can travel a fair distance before colliding. Electronic devices few nanometers long that would be able to transmit charge at breath taking speeds for a fraction of power compared to present day CMOS transistors. Many researches try to check a possibility to make it a perfect replacement for silicon based devices. Graphene has shown high potential to be used as interconnects in the field of high frequency electrical devices. With all those advantages of graphene, we demonstrate characteristics of electrical and optical properties of graphene such as the effect of graphene geometry on the microwave properties using the measurements of S-parameter in range of 500 MHz - 40 GHz at room temperature condition. We confirm that impedance and resistance decrease with increasing the number of graphene layer and w/L ratio. This result shows proper geometry of graphene to be used as high frequency interconnects. This study also presents the optical properties of graphene oxide (GO), which were deposited in different substrate, or influenced by oxygen plasma, were confirmed using different characterization techniques. 4-6 layers of the polycrystalline GO layers, which were confirmed by High resolution transmission electron microscopy (HRTEM) and electron diffraction analysis, were shown short range order of crystallization by the substrate as well as interlayer effect with an increase in interplanar spacing, which can be attributed to the presence of oxygen functional groups on its layers. X-ray photoelectron Spectroscopy (XPS) and Raman spectroscopy confirms the presence of the $sp^2$ and $sp^3$ hybridization due to the disordered crystal structures of the carbon atoms results from oxidation, and Fourier Transform Infrared spectroscopy (FTIR) and XPS analysis shows the changes in oxygen functional groups with nature of substrate. Moreover, the photoluminescent (PL) peak emission wavelength varies with substrate and the broad energy level distribution produces excitation dependent PL emission in a broad wavelength ranging from 400 to 650 nm. The structural and optical properties of oxygen plasma treated GO films for possible optoelectronic applications were also investigated using various characterization techniques. HRTEM and electron diffraction analysis confirmed that the oxygen plasma treatment results short range order crystallization in GO films with an increase in interplanar spacing, which can be attributed to the presence of oxygen functional groups. In addition, Electron energy loss spectroscopy (EELS) and Raman spectroscopy confirms the presence of the $sp^2$ and $sp^3$ hybridization due to the disordered crystal structures of the carbon atoms results from oxidation and XPS analysis shows that epoxy pairs convert to more stable C=O and O-C=O groups with oxygen plasma treatment. The broad energy level distribution resulting from the broad size distribution of the $sp^2$ clusters produces excitation dependent PL emission in a broad wavelength range from 400 to 650 nm. Our results suggest that substrate influenced, or oxygen treatment GO has higher potential for future optoelectronic devices by its various optical properties and visible PL emission.