• 대한화장품학회지
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• 제34권4호
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• pp.269-274
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• 2008

본 연구를 통해 반도체 산업에서 유래된 마이크로웨이브 증폭 에칭기술(MEE)을 이용하여, 마이카의 표면 구조를 변화시키고 오일 흡유량을 조절할 수 있었다. 마이크로웨이브 에너지가 마이카에 조사되면, 마이카 표면이 몇 분 이내에 에칭이 된다. 에칭의 결과로 마이카의 오일 흡유량이 증가되고, 마이카 $SiO_2$층의 표면 변화에 의해 백색도가 증가한다. 추가적으로, 땀을 흡수한 이후에도 높은 백색도가 유지된다. 마이카의 표면구조의 변화는 불산에 슬러리화된 마이카에 마이크로웨이브 조사를 통해서 이루어졌다. 에칭의 정도는 산의 농도, 조사 시간, 조사 에너지의 양, 슬러리의 농도에 의해 조절되었다. 에칭된 마이카의 표면 구조는 '달' 표면 모양과 유사하게 보인다. 표면적과 거칠기 등의 특성은 Brunauer-Emmett-Teller (BET), atomic force microscopy (AFM), scanning electron microscopy (SEM), Spectrophotometer, goniophometer로 측정되었다.

• Journal of Electrical Engineering and Technology
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• 제7권6호
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• pp.983-989
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• 2012

The purpose of this paper is to decide the optimum synthesis conditions of polycrystalline diamond films according to the ratio of gas mixture. Diamond films were deposited with cyclo-hexane as a carbon precursor by the microwave plasma enhanced chemical vapor deposition process. The optimum oxygen ratio to cyclo-hexane was reached about 125 % under the fixed 0.3% c-hexane in hydrogen. Oxygen plays a role in etching the graphitic components of carbon sp2 bond effectively. By OES measurement, the best synthesis conditions found out about 12.5 % and 15.75 %, which is the emission intensity ratios of CH(B-X) and $H{\beta}$ on $H{\alpha}$, respectively. Also, the electron temperature was similar about 5,000 to 5,200 K in this work.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1349-1351
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• 2001

Polycrystalline diamond films are deposited by using a microwave plama CVC system, where the bias-enhanced nucleation (BEN) method is employed. Effects of the varying microwave power, the surface treatment by hydrogen plasma, and the cyclic hydrogen etching during deposition on the crystallinity as well as on the surface roughness of deposited films are examined by Raman spectroscopy, SEM, and AFM. A novel method for achieving a smoother diamond surface is also suggested through the indirect wafer bonding and back-side polishing.

• 대한화학회지
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• 제45권4호
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• pp.351-356
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• 2001

철, 코발트, 니켈 합금을 이용한 탄소확산-수소플라즈마 에칭법으로 다이아몬드 자체막의 표면을 매우 평탄하게 할 수 있었다. 이 방법에서의 다이아몬드 자체막을 합금과 몰리브데늄 기판 사이에 위치시켜 금속-다이아몬드-몰리브데늄(MDM) 샌드위치 형태의 샘플 세 트를 이루게 하였다. 이 샘플세트를 마이크로 웨이브 플라즈마 장치에 장착하여 수소 플라즈마를 발생시켜서 기판온도가 섭씨 1,000 이상이 되도록 하였다. 이와 같은 과정들은 탄소확산-수소플라즈마 방법이라고 하였다. 다이아몬드 자체막 표면을 에칭한 후 표면 거칠기, 표면형상, 에칭한 다이아몬드 표면속의 불순물의 침투를 조사하였다. 결론적으로, 탄소 확산-수소 플라즈마 에칭법은 전자 디바이스에 응용할 수 있는 매우 평탄한 다이아몬드 표면을 형성시키는 방법임을 알 수 있다.

• 한국표면공학회지
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• 제46권1호
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• pp.29-35
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• 2013

The effect of DC bias on the growth of nanocrystalline diamond films on silicon substrate by microwave plasma chemical vapor deposition has been studied varying the substrate temperature (400, 500, 600, and $700^{\circ}C$), deposition time (0.5, 1, and 2h), and bias voltage (-50, -100, -150, and -200 V) at the microwave power of 1.2 kW, working pressure of 110 torr, and gas ratio of Ar/1%$CH_4$. In the case of low negative bias voltages (-50 and -100 V), the diamond particles were observed to grow to thin film slower than the case without bias. Applying the moderate DC bias is believed to induce the bombardment of energetic carbon and argon ions on the substrate to result in etching the surfaces of growing diamond particles or film. In the case of higher negative voltages (-150 and -200 V), the growth rate of diamond film increased with the increasing DC bias. Applying the higher DC bias increased the number of nucleation sites, and, subsequently, enhanced the film growth rate. Under the -150 V bias, the height (h) of diamond films exhibited an $h=k{\sqrt{t}}$ relationship with deposition time (t), where the growth rate constant (k) showed an Arrhenius relationship with the activation energy of 7.19 kcal/mol. The rate determining step is believed to be the surface diffusion of activated carbon species, but the more subtle theoretical treatment is required for the more precise interpretation.

• 한국진공학회지
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• 제7권s1호
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• pp.167-170
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• 1998

To apply diamond films in microelectromechanical systems(MEMS), it is necessary to develop the patterning technologies of diamond films in the micrometer scale. In this paper, three different kinds of technologies for patterning CVD diamond films carried out by us were demonstrated: selective growth by improved diamond nucleation in DC bias-enhanced microwave plasma chemical vapor deposition (MPCVD) system, selective growth of seeding using diamond-particle-mixed photoresist, and selective etching of oxygen ion beam using Al as the mask. It was show that high selectivity and precise patterns had been achieved, and all the processes were compatible with IC process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.269-272
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• 1995

As methane concentration was varietal, the textures of diamond films deposited on Si(100)substrate could be observed by XRD, SEM and Raman spectroscope. As a result, O$_2$plasma etching has been useful to observe microscopic structure of diamond films by SEM. The cross section of diamond films deposited on Si(100) substrate with 4% concentration of methane to hydrogen was a polycrystal like a pillar. The diamond crystal like a pillar has been oriented to (110) surface and the high quality diamond with FWHM of Raman spectra being 3.8cm$\^$-1/ has been grown. As time goes by deposition time, the preferred orientation increases.

• E2M - 전기 전자와 첨단 소재
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• 제9권3호
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• pp.270-276
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• 1996

As methane concentration was varied, the textures of diamond films deposited on Si(100)substrate were observed by XRD,SEM and Raman spectroscope. As a result, $O_{2}$ plasma etching has been useful to observe microscopic structure of diamond films by SEM. The cross section of diamond films deposited on Si(100)substrate with 4% concentration of methane to hydrogen was a polycrystal like a pillar. The diamond crystal like a pillar has been oriented to (110)surface and the high quality diamond film with FWHM of Raman spectra being 3.8 $cm^{-1}$ / has been grown. As time goes by deposition time, the preferred orientation increases