• 대한의용생체공학회:의공학회지
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• 제28권3호
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• pp.348-354
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• 2007

Polymer actuators, which are also called as smart materials, change their shapes when electrical, chemical, thermal, or magnetic energy is applied to them and are useful in wide variety of applications such as microelectromechanical systems (MEMS), machine components, and artificial muscles. For this study, Polyaniline/carbon-nanotube polymer actuator that is one of electroactive polymer actuators was prepared. Since the nonlinear phenomena of hysteresis and a step response are essential considerations for practical use of polymer actuators, we have investigated the movement of the Polyaniline/carbon-nanotube polymer actuator and have developed an integrated model that can be used for simulating and predicting the hysteresis and a step response during actuation. The Preisach hysteresis model, one of the most popular phenomenological models of hysteresis, were used for describing the hysteretic behavior of Polyaniline/carbon-nanotube polymer actuator while the ARX method, one of system identification techniques, were used for modeling a step response. In this paper, we first expain details in preparation of the Polyaniline/carbon-nanotube polymer then present the mathematical description of our model, the extraction of the parameters, simulation results from the model, and finally a comparison with measured data.

• 로봇학회논문지
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• 제8권1호
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• pp.29-36
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• 2013

This paper presents a sensitivity optimization of a MEMS (microelectromechanical systems) gyroscope for a magnet-gyro system. The magnet-gyro system, which is a guidance system for a AGV (automatic or automated guided vehicle), uses a magnet positioning system and a yaw gyroscope. The magnet positioning system measures magnetism of a cylindrical magnet embedded on the floor, and AGV is guided by the motion direction angle calculated with the measured magnetism. If the magnet positioning system does not measure the magnetism, the AGV is guided by using angular velocity measured with the gyroscope. The gyroscope used for the magnet-gyro system is usually MEMS type. Because the MEMS gyroscope is made from the process technology in semiconductor device fabrication, it has small size, low-power and low price. However, the MEMS gyroscope has drift phenomenon caused by noise and calculation error. Precision ADC (analog to digital converter) and accurate sensitivity are needed to minimize the drift phenomenon. Therefore, this paper proposes the method of the sensitivity optimization of the MEMS gyroscope using DEAS (dynamic encoding algorithm for searches). For experiment, we used the AGV mounted with a laser navigation system which is able to measure accurate position of the AGV and compared result by the sensitivity value calculated by the proposed method with result by the sensitivity in specification of the MEMS gyroscope. In experimental results, we verified that the sensitivity value through the proposed method can calculate more accurate motion direction angle of the AGV.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 G
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• pp.2536-2538
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• 1998

This paper investigates the residual stress of tetraethoxysilane (TEOS) and 7wt% phosphosilicate glass (PSG), which are commonly used as a sacrificial layer or etch mask in the fabrication of microelectromechanical systems (MEMS). In order to measure residual stress, $2{\mu}m$ thick TEOS and PSG stress measurement structures are fabricated. Polysilicon is used as the sacrificial layer. First the residual stress of an as-deposited 7wt% PSG flim and TEOS film are measured to be-0.3115% and -0.435%, respectively, which are quite large. These films are annealed from $500^{\circ}C$ to $800^{\circ}C$. Annealing has the effects of reducing residual stress. In the case of the 7wt% PSG film, the residual stress becomes +0.00715% after annealing at $625^{\circ}C$ for 150 minutes. In the case of TEOS film, the residual stress reduces to -0.2134% after same condition. Incidentally, this condition is the same condition for depositing a $2{\mu}m$ thick polysilicon at $625^{\circ}C$ at our low pressure chemical vapor deposition (LPCVD) furnace.

• Applied Microscopy
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• 제49권
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• pp.3.1-3.7
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• 2019

Graphene, which is one of the most promising materials for its state-of-the-art applications, has received extensive attention because of its superior mechanical properties. However, there is little experimental evidence related to the mechanical properties of graphene at the atomic level because of the challenges associated with transferring atomically-thin two-dimensional (2D) materials onto microelectromechanical systems (MEMS) devices. In this study, we show successful dry transfer with a gel material of a stable, clean, and free-standing exfoliated graphene film onto a push-to-pull (PTP) device, which is a MEMS device used for uniaxial tensile testing in in situ transmission electron microscopy (TEM). Through the results of optical microscopy, Raman spectroscopy, and TEM, we demonstrate high quality exfoliated graphene on the PTP device. Finally, the stress-strain results corresponding to propagating cracks in folded graphene were simultaneously obtained during the tensile tests in TEM. The zigzag and armchair edges of graphene confirmed that the fracture occurred in association with the hexagonal lattice structure of graphene while the tensile testing. In the wake of the results, we envision the dedicated preparation and in situ TEM tensile experiments advance the understanding of the relationship between the mechanical properties and structural characteristics of 2D materials.

• 한국진공학회지
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• 제18권2호
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• pp.85-91
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• 2009

현재 플렉시블 폴리머를 이용한 MEMS (Microelectromechanical Systems) 기술이 빠르게 발전하고 있다. 그 중에서 Polycarbonate (PC), Poly Methyl Methacrylate (PMMA)와 같은 플렉시블 폴리머 재료는 광학적 특성이 우수하고 인체 친화적이며 미세 패턴 제조 공정이 용이하다는 등의 많은 장점을 가지고 있다. 본 연구는 반응성 이온 식각 기술을 이용하여 $O_2$, $SF_6$ 그리고 $CH_4$의 삼성분계 가스의 혼합 비율에 따른 PC와 PMMA의 건식 식각 결과 및 특성 평가에 관한 것이다. 준비한 각각의 기판에 포토리소그래피 방법으로 마스크를 형성하여 샘플을 만들었다. RF 척 파워를 100 W, 총 가스 유량을 10 sccm으로 고정시켜 플라즈마 식각 실험을 실시하였다. 그 결과에 의하면 전체적으로 PMMA의 식각율이 PC보다는 약 2배 정도 높았다. 그 결과는 PC는 PMMA 보다 상대적으로 높은 녹는점을 가지고 있다는 사실과 관계가 있다고 생각한다. 또한 $O_2/SF_6/CH_4$의 삼성분계 가스와 $SF_6/CH_4$, $O_2/SF_6$, $O_3/CH_4$로 나누었을 때 $O_2/SF_6$의 혼합 가스에서 PMMA와 PC의 식각 속도가 가장 높았다 (PC: 5 sccm $O_2$/5 sccm $SF_6$에서 약 350 nm/min, PMMA: 2.5 sccm $O_2$/7.5 sccm $SF_6$에서 약 570 nm/min). SEM을 활용하여 식각된 표면을 분석한 결과 PC는 PMMA보다 상대적으로 식각 표면이 더 매끈하였다. 또한 표면 거칠기 분석결과 PC의 표면 거칠기는 1.9$\sim$3.88 nm이었지만 PMMA의 표면 거칠기는 17.3$\sim$26.1 nm로 현저하게 높았음을 확인할 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.418-418
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• 2008

The electrochemical etching of silicon in HF-based solutions is known to form various types of porous structures. Porous structures are generally classified into three categories according to pore sizes: micropore (below 2 nm in size), mesopore (2 ~ 50 nm), and macropore (above 50 nm). Recently, the formation of macropores has attracted increasing interest because of their promising characteristics for an wide scope of applications such as microelectromechanical systems (MEMS), chemical sensors, biotechnology, photonic crystals, and photovoltaic application. One of the promising applications of macropores is in the field of MEMS. Anisotropic etching is essential step for fabrication of MEMS. Conventional wet etching has advantages such as low processing cost and high throughput, but it is unsuitable to fabricate high-aspect-ratio structures with vertical sidewalls due to its inherent etching characteristics along certain crystal orientations. Reactive ion dry etching is another technique of anisotropic etching. This has excellent ability to fabricate high-aspect-ratio structures with vertical sidewalls and high accuracy. However, its high processing cost is one of the bottlenecks for widely successful commercialization of MEMS. In contrast, by using electrochemical etching method together with pre-patterning by lithographic step, regular macropore arrays with very high-aspect-ratio up to 250 can be obtained. The formed macropores have very smooth surface and side, unlike deep reactive ion etching where surfaces are damaged and wavy. Especially, to make vertical microwire or nanowire arrays (aspect ratio = over 1:100) on silicon wafer with top-down photolithography, it is very difficult to fabricate them with conventional dry etching. The electrochemical etching is the most proper candidate to do it. The pillar structures are demonstrated for n-type silicon and the formation mechanism is well explained, while such a experimental results are few for p-type silicon. In this report, In order to understand the roles played by the kinds of etching solution and mask patterns in the formation of microwire arrays, we have undertaken a systematic study of the solvent effects in mixtures of HF, dimethyl sulfoxide (DMSO), iso-propanol, and mixtures of HF with water on the structure formation on monocrystalline p-type silicon with a resistivity with 10 ~ 20 $\Omega{\cdot}cm$. The different morphological results are presented according to mask patterns and etching solutions.

• 대한전자공학회논문지TC
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• 제41권6호
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• pp.59-68
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• 2004

반도체기술과 무선통신기술 그리고 센서기술의 비약적인 발전에 힘입어 검출기능, 프로세싱 기능, 무선통신기능, 배터리 등을 탑재한 초소형 저가의 정보취득 노드를 양산하는 것이 가능해지면서 센서 네트워크가 보편화되기 시작하였다. 센서 네트워크는 노드를 배치하는 것만으로 자체 라우팅 경로를 설정하고 의미 있는 데이터를 목적지 노드로 전송할 수 있는 자발적인 망이다. 센서 노드들은 대부분 배터리를 구동 전원으로 사용하기 때문에 저전력 동작이 중요하다. 센서 노드는 검출한 데이터를 목적지로 전송하는 역할과 다른 센서 노드들의 라우터 역할을 겸하고 있다. 많은 경우 센서 노드가 검출한 데이터를 전송하는 경우보다 라우터로서의 역할에 더 많은 에너지를 소비하기 때문에 저전력 라우팅은 무엇보다 중요하다. 센서 네트워크에서는 일반 무선 Ad-Hoc 네트워크와 같은 표준이 없기 때문에 본 논문에서는 센서 네트워크에 적용할 수 있는 전력 잔량에 따른 확률적 RREQ 폐기 방법을 적용한 저전력 라우팅 기법을 제안하고 모의실험을 통하여 결과를 전력 잔량에 따른 지연결과와 비교하여 살펴보았다. 실험 결과 제안 방법은 $10-20\%$ 정도 에너지 소모를 줄일 수 있었고 노드들 간에 에너지를 균등하게 소모하는 효과를 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.241-241
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• 2008

Macrofore formation in silicon and other semiconductors using electrochemical etching processes has been, in the last years, a subject of great attention of both theory and practice. Its first reason of concern is new areas of macropore silicone applications arising from microelectromechanical systems processing (MEMS), membrane techniques, solar cells, sensors, photonic crystals, and new technologies like a silicon-on-nothing (SON) technology. Its formation mechanism with a rich variety of controllable microstructures and their many potential applications have been studied extensively recently. Porous silicon is formed by anodic etching of crystalline silicon in hydrofluoric acid. During the etching process holes are required to enable the dissolution of the silicon anode. For p-type silicon, holes are the majority charge carriers, therefore porous silicon can be formed under the action of a positive bias on the silicon anode. For n-type silicon, holes to dissolve silicon is supplied by illuminating n-type silicon with above-band-gap light which allows sufficient generation of holes. To make a desired three-dimensional nano- or micro-structures, pre-structuring the masked surface in KOH solution to form a periodic array of etch pits before electrochemical etching. Due to enhanced electric field, the holes are efficiently collected at the pore tips for etching. The depletion of holes in the space charge region prevents silicon dissolution at the sidewalls, enabling anisotropic etching for the trenches. This is correct theoretical explanation for n-type Si etching. However, there are a few experimental repors in p-type silicon, while a number of theoretical models have been worked out to explain experimental dependence observed. To perform ordered macrofore formaion for p-type silicon, various kinds of mask patterns to make initial KOH etch pits were used. In order to understand the roles played by the kinds of etching solution in the formation of pillar arrays, we have undertaken a systematic study of the solvent effects in mixtures of HF, N-dimethylformamide (DMF), iso-propanol, and mixtures of HF with water on the macrofore structure formation on monocrystalline p-type silicon with a resistivity varying between 10 ~ 0.01 $\Omega$ cm. The etching solution including the iso-propanol produced a best three dimensional pillar structures. The experimental results are discussed on the base of Lehmann's comprehensive model based on SCR width.

• 센서학회지
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• 제8권3호
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• pp.265-273
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• 1999

본 논문에서는 MEMS 공정에 많이 사용되는 tetraethoxysilane (TEOS) 산화막, low temperature oxide (LTO), 7 wt%, 10 wt% phosphosilicate glass (PSG)의 잔류응력을 Euler beam과 bent-beam strain sensor를 제작하여 측정하였다. 이러한 산화막 잔류응력 측정 구조물을 만들기 위해 다결정실리콘을 희생층으로 사용하였으며 $XeF_2$를 이용하여 희생층 식각을 하였다. 먼저 각 산화막의 증착 당시 잔류응력을 측정한 후 $500^{\circ}C$에서 $800^{\circ}C$까지 질소분위기에서 1 시간 동안 열처리하였다. 또 표면미세가공에서 가장 많이 사용되는 $585^{\circ}C$, $625^{\circ}C$ 다결정실리콘 증착 조건에서 열처리하여 산화막의 잔류응력 변화를 측정하였다. 측정 결과 TEOS와 LTO, 7 wt% PSG는 $600^{\circ}C$ 이하에서 압축잔류응력이 줄어들다가 그 이상에서 다시 커지는 반면에 phosphorus 농도가 높은 10 wt% PSG의 경우는 $500^{\circ}C$이상에서 압축잔류응력이 증가하는 것을 확인하였다. 또 7 wt% PSG가 $585^{\circ}C$ 다결정실리콘 증착 시 가장 작은 잔류응력을 나타내었다.