• Title/Summary/Keyword: metallurgical

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The Extraction Method of LDD NMOSFET's Metallurgical Gate Channel Length (LDD NMOSFET의 Metallurgical 게이트 채널길이 추출 방법)

  • Jo, Myung-Suk
    • Journal of IKEEE
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    • v.3 no.1 s.4
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    • pp.118-125
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    • 1999

  • A capacitance method to extract the metallurgical channel length of LDD MOSFET's, which is defined by the length between the metallurgical junction of substrate and source/drain under the gate, is presented. The gate capacitances of the finger type and plate type LDD MOSFET gate test patterns with same total gate area are measured. The gate bias of each pattern is changed, and the capacitances are measured with source, drain, and substrate bias grounded. The differences between two test pattern's capacitance data are plotted. The metallurgical channel length is extracted from the peak data at a maximum point using a simple formula. The numerical simulation using two-dimensional device simulator is performed to verify the proposed method.

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Development and properties of jointed Bi-2223 superconductor tape

  • Kim, Jung-Ho;Ji, Bong-Ki;Park, Hyung-Sang;Kim, Ho-Jin;Oh, Seung-Jin;Kim, Joong-Seok;Joo, Jin-Ho;Nah, Won-Soo
    • 한국초전도학회:학술대회논문집
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    • v.10
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    • pp.298-303
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    • 2000

  • We evaluated the electric properties of Bi-2223 jointed tapes processed by both resistive- and supercondcuting-joint methods. For the resistive-joint, filler materials of wood metal, Pb/Sn, In, and silver paste were used, whereas, for the superconductive-joint, the lap joint method were used. In the resistive-joint tape, it was observed that the electrical properties such as current transport property, n-value, and contact resistance of the tape were significantly related to the resistivity of filler materials. On the other hand, in the superconducting-joint tape, the current transport property was dependent on the uniaxial pressure. Specifically, the current transport property varied 50 to 80% with uniaxial pressure, probably due to the irregular microstructure in the transition region.

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