• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.24-24
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• 2007

We have demonstrated new functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of silver via photo-induced diffusion in thin chalcogenide films is considered. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Silver saturated chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in programmable metallization cell (PMC) devices. In this paper, we investigated electrical and optical properties of Ag-doped chalcogenide thin film on changed thickness of Ag and chalcogenide thin films, which is concerned at Ag-doping effect of PMC cell. As a result, when thickness of Ag and chalcogenide thin film was 30nm and 50nm respectively, device have excellent characteristics.

• 한국전자파학회논문지
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• 제14권10호
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• pp.1004-1010
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• 2003

본 논문에서는 유한한 도체 두께를 갖는 결합선로를 이용하여 1/4파장 역방향 방향성 결합기를 설계하였다. 방향성 결합기를 구성하는 유한 도체 두께를 갖는 결합선로를 해석하기 위한 방법으로 간단하고 빠른 수치해석 방법인 모드정합법을 사용하였다. 본 논문의 해석 결과는 도체 두께를 고려한 역방향 방향성 결합기의 설계가, 도체 두께를 고려하지 않고 설계한 경우 기존에 알려졌던 단점들인 약한 결합특성, 낮은 지향성, 그리고 비현실적인 결합선로의 폭을 극복할 수 있음을 보여준다. 또한, 수치해석 결과로부터 l/4파장 역방향 방향성 결합기에서는 도체 두께의 고려로 강한 결합특성을 만드는 것이 가능하지만, 결합길이가 약간 길어진다는 사실을 확인하였다. 본 논문에서 해석한 유한한 도체 두께는 역방향 방향성 결합기의 새로운 설계 변수로서 사용이 가능하며, 아울러 다양한 마이크로파 집적회로의 설계에도 응용이 가능함을 보여준다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권2호
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• pp.147-152
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• 2016

In this study, we fabricated Ag-based electrochemical metallization memory devices which is also called conductive-bridge random-access memory (CBRAM) in order to investigate the resistive switching behavior depending on the bottom electrode (BE). RRAM cells of two different layer configurations having $Ag/Si_3N_4/TiN$ and $Ag/Si_3N_4/p^+$ Si are studied for metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) structures, respectively. Switching voltages including forming/set/reset are lower for MIM than for MIS structure. It is found that the workfunction different affects the performances.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권1호
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• pp.16-21
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• 2015

In this study, the effects of forming gas post metallization annealing (PMA) on recessed AlGaN/GaN-on-Si MOSHFET were investigated. The device employed an ICPCVD $SiO_2$ film as a gate oxide layer on which a Ni/Au gate was evaporated. The PMA process was carried out at $350^{\circ}C$ in forming gas ambient. It was found that the device instability was improved with significant reduction in interface trap density by forming gas PMA.

• 공업화학
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• 제29권3호
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• pp.253-257
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• 2018

DNA를 기반으로 한 금속 나노와이어는 전기적인 물성은 떨어지지만, 제작 방식이 간단하고, 대면적에서 대량으로 제작할 수 있으며, 유기 반응을 통해 분자 소자 제작의 기판으로도 사용가능한 차세대 재료로 전망된다. 본 총설에서는 DNA 금속화 반응을 이용한 나노와이어의 제작 및 3차원 구조체의 제작 기술에 대해 소개하고, 이와 관련한 연구 현황과 발전 방향에 대해 논의하고자 한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.86-87
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• 2008

In this study, we studied the nature of thin films formed by photodoping chalcogenide materials with for use in programmable metallization cell devices, a type of ReRAM. We investigated the resistance of Ag-doped chalcogenide thin films varied in the applied voltage bias direction from about 1 M$\Omega$ to several hundreds of $\Omega$. As a result of these resistance change effects, it was found that these effects agreed with PMC-RAM. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from the chalcogenide materials.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.1553-1555
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• 2008

Super-hydrophobic treated Polyimide film was used as a flexible substrate for developing a new method of metallization. Hydrophilic patterns were fabricated by IN irradiation through shadow mask. Patterned super-hydrophobic substrate was dipped into a bath containing silver nano ink Silver ink was only coated on hydrophilic patterned area. Metal lines of $600{\mu}m$ pitch were fabricated successfully. However, their thickness was too thin to serve as interconnection. To overcome this problem, iterative dipping was conducted. After repeating five times, the thickness of silver metal lines were increased to over than $2{\mu}$. After heat treatment of silver lines, their resistivities were reduced to order of $30{\mu}{\Omega}$-cm the similar level of values reported in other literatures. So, a new method of metallization has high potential for application of RFID antenna and flexible electronics substrates.

• E2M - 전기 전자와 첨단 소재
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• 제10권10호
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• pp.1034-1040
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• 1997

A solar cell conversion effiency was degraded by grain boundary effect in polycrystalline silicon. Grain boundaries acted as potential barriers as well as recombination centers for the photo-generated carriers. To reduce these effects of the grain boundaries we investigated various influencing factors such as emitter thickness thermal treatment preferential chemical etching of grain boundaries grid design contact metal and top metallization along boundaries. Pretreatment in $N_2$atmosphere and gettering by POCl$_3$and Al were performed to obtain multicrystalline silicon of the reduced defect density. Structural electrical and optical properties of slar cells were characterized before and after each fabrication process. Improved conversion efficiencies of solar cell were obtained by a combination of pretreatment above 90$0^{\circ}C$ emitter layer of 0.43${\mu}{\textrm}{m}$ Al diffusion in to grain boundaries on rear side fine grid finger top Yb metal and buried contact metallization along grain boundaries.

• 한국전기전자재료학회논문지
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• 제22권5호
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• pp.382-385
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• 2009

In this study, we studied switching characteristics of germanium selenide(Ge-Se)/silver(Ag) contact formed by photodoping for use in programmable metallization cell devices. We have been investigated the switching characteristics of Ag-doped chalcogenide thin films. Changed resistance range by direction of applied voltage is about $1\;M{\Omega}$ $\sim$ hundreds of $\Omega$. The cause of these resistance change can be thought the same phenomenon such as resistance variation of PMC-RAM. The results imply that the separated Ag-ions react the atoms or defects in chalcogenide thin films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.157-158
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• 2007

Effects of post-metallization anneal (PMA) on interface trap characteristics of Si-$SiO_2$ are studied. The conventional PMA method utilizes forming gas anneal, where 10% hydrogen in nitrogen atmosphere is used. A new PMA method utilizes hydrogen rich PECVD- silicon nitride $(SiN_x)$ film as a hydrogen diffusion source and a out-diffusion blocking layer. It can be shown through charge pumping current measurement that the new PMA is indeed effective to decrease Si-$SiO_2$ interface trap density.