• Applied Chemistry for Engineering
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• v.5 no.6
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• pp.925-934
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• 1994

Nickel recovered from the spent oil-hydrogenation catalysts was used in hydrogenation catalyst preparation. The spent catalyst contains approximately 21.8% Ni, 0.7% Mg, and small quantities of Al, Fe, and Zn. Nickel recovery was obtained by inorganic acid digestion in the order of HCI>$NHO_3$>$H_2SO_4$. For $HNO_3$, 3hour extraction with 3N solution was satisfactory. In the PH range of 6.5~9.0, Ni recovery was higher, but metallic impurities were found to be coprecipitated. The PH in the range of 7.0~9.0 seems to be the optimum condition for separation to obtain acceptable Ni precipitates without the decrease of purity. The catalysts prepared with reclaimed nickel by wet reduction methods showed catalytic activities close to those prepared using reagent nickel in the oil hydrogenation reaction. The surface areas of the support do not seem to affect the catalytic activity.

• Korean Journal of Materials Research
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• v.11 no.4
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• pp.251-257
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• 2001

A present semiconductor cleaning technology is based upon RCA cleaning, high temperature process which consumes vast chemicals and ultra Pure water(UPW). This technology gives rise to the many environmental issues, therefore some alternatives have been studied. In this study, intentionally contaminated Si wafers were cleaned using the electrolyzed water(EW). The EW was generated by an electrolysis equipment which was composed of anode. cathode, and toddle chambers. Oxidative water and reductive water were obtained in anode and cathode chambers, respectively. In case $NH_4$Cl electrolyte, the oxidation-reduction potential(ORP) and pH for anode water(AW) and cathode water(CW) were measured to be +1050mV and 4.7, and -750mV and 9.8, respectively. For cleaning metallic impurities, AW was confirmed to be more effective than that of CW, and the particle distribution after various particle removal processes was shown to be same distribution.

• Journal of the Korean Applied Science and Technology
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• v.28 no.2
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• pp.135-139
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• 2011

In order to make high-purity ferro-manganese from $Mn_3O_4$ waste dust, the application of aluminothermite process to the reduction of the waste dust was investigated. The mixture from $Mn_3O_4$ dust as metallic source and Al metal powder as the reductant ignited, and reduced with an extremely intense exothermic reaction. The rapid propagation of the aluminothermite reaction occurred spontaneously and stably by ignition of the mixture. The Manganese having some alloy elements emerged as liquids due to the high temperatures reached up to about $2,500^{\circ}C$ and separated from the liquid by their differences of specific gravity. The result of thermite reaction showed the fact that can be obtained high purity ferro-manganese which have over about 90% of manganese content and lower impurities such as C, P, S than those of KS D3712 specification. The recovery of manganese from $Mn_3O_4$ dust was lower level of about 65% than about 75% from manganese ore by electric furnace process, that is due to spatter loss because of its extremely intense thermite reaction. But it will be improved by the process designed to provide CaO as the cooler or to use the Al metal powder having larger particle size distribution.

• Journal of the Society of Naval Architects of Korea
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• v.36 no.4
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• pp.95-104
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• 1999

Use of the ultra thick plate is being continuously increased in large off-shore structures, ships, bridges and skyscraper construction, due to increasingly large-sized steel structures and it seems that this trend will be maintained. But, occurrence of the lamella tearing has been reported in ultra thick plate used for construction. It is reportedly caused by impurities such S(sulfur), P(phosphorus) and others accumulated in the ultra thick plate's centerline in the thickness direction with strip shape or by restraint residual stress caused by the welding. In the ultra thick plate made by continuous casting method, occurrence of lamination is difficult to avoid because of the properties of production procedure. Therefore, with a view to reducing the lamella properties, this report tries tearing in the steel structure in the view of welding strength rather than metallic properties, this report tries to seek the optimum groove and welding procedure by using the computer simulation based on FEM(Finite Element Method).

• Korean Journal of Metals and Materials
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• v.49 no.1
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• pp.79-84
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• 2011

Double-walled carbon nanotubes (DWCNTs) with high purity were produced by the catalytic decomposition of tetrahydrofuran (THF) using a Fe-Mo/MgO catalyst at $800^{\circ}C$. The as-synthesized DWCNTs typically have catalytic impurities and amorphous carbon, which were removed by a two-step purification process consisting of acid treatment and oxidation. In the acid treatment, metallic catalysts were removed in HCl at room temperature for 5 hr with magnetic stirring. Subsequently, the oxidation, using air at $380^{\circ}C$ for 5 hr in the a vertical-type furnace, was used to remove the amorphous carbon particles. The DWCNT suspension was prepared by dispersing the purified DWCNTs in the aqueous sodium dodecyl sulfate solution with horn-type sonication. This was then air-sprayed on ITO glass to fabricate DWCNT field emitters. The field emission properties of DWCNT films related to transmittance were studied. This study provides the possibility of the application of large-area transparent CNT field emission cathodes.

• Korean Journal of Metals and Materials
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• v.48 no.4
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• pp.335-341
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• 2010

High-quality single-walled carbon nanotubes (SWCNTs) were synthesized by catalytic decomposition of $C_2H_2$ using Fe-Mo/MgO catalyst at $800^{\circ}C$. The as-synthesized SWCNTs typically occurred in the form of a bundle with a diameter of 10~20 nm together with amorphous carbon and catalytic impurities, which were removed by a two-step purification process consisting of oxidation and an acid treatment. The oxidation step, using an $O_2$-Ar mixture at $380^{\circ}C$ for 5 hr in a vertical-type furnace and a $HNO_3$ treatment at $100^{\circ}C$ for one hour, was utilized to remove the amorphous carbon particles. Subsequently, metallic catalysts were removed in HCl at room temperature for 5 hr under magnetic stirring. The SWCNT suspension was prepared by dispersing the purified SWCNTs in an aqueous sodium dodecyl benzene sulfonate solution with horn-type sonication. This was then air-sprayed on glass to fabricate CNT field emitters. The samples had a turn-on field value of 4 V/${\mu}m$ and a current density of 0.67 mA/$cm^2$ at 9 V/${\mu}m$. Increasing the HCl treatment time improved the field emission properties.

• Journal of the Korean Chemical Society
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• v.37 no.2
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• pp.228-236
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• 1993

The effect of ferric ion on the reaction of CH_3$MgI with benzylbromide was investigated by determining the product ratio between cross-coupling product, ethylbenzene (A) and homocoupling product, bibenzyl (B) in the presence of ferric ion. When CH_3$MgI prepared with pure magnesium was used, the ratio of A to B was 22 to 78 and with reagent grade magnesium, the ratio became 33 to 67 indicating that metallic impurities in magnesium affect the reaction mechanism to lead less homocoupling product, B. The ratio changes became significant when ferric chloride was added in the reaction mixture in catalytic amounts and the ratio of A to B reached to 80 to 20 at maximum. The reaction in the presence of ferric ion seems to follow mainly an ionic mechanism which involves iron-benzyl bromide ${\pi}$-complex formation. The complex formation is expected to be able to enhance ionic attack of CH_3$MgI on benzyl carbon to give more A.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.278-278
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• 2009

A photovoltaic device consisting of arrays of radial p-n junction wires enables a decoupling of the requirements for light absorption and carrier extraction into orthogonal spatial directions. Each individual p-n junction wire in the cell is long in the direction of incident light, allowing for effective light absorption, but thin in orthogonal direction, allowing for effective carrier collection. To fabricate radial p-n junction solar cells, p or n-type vertical Si wire cores need to be produced. The majority of Si wires are produced by the vapor-liquid-solid (VLS) method. But contamination of the Si wires by metallic impurities such as Au, which is used for metal catalyst in the VLS technique, results in reduction of conversion efficiency of solar cells. To overcome impurity issue, top-down methods like noble metal catalytic etching is an excellent candidate. We used noble metal catalytic etching methods to make Si wire arrays. The used noble metal is two; Au and Pt. The method is noble metal deposition on photolithographycally defined Si surface by sputtering and then etching in various BOE and $H_2O_2$ solutions. The Si substrates were p-type ($10{\sim}20ohm{\cdot}cm$). The areas that noble metal was not deposited due to photo resist covering were not etched in noble metal catalytic etching. The Si wires of several tens of ${\mu}m$ in height were formed in uncovered areas by photo resist. The side surface of Si wires was very rough. When the distance of Si wires is longer than diameter of that Si nanowires are formed between Si wires. Theses Si nanowires can be removed by immersing the specimen in KOH solution. The optimum noble metal thickness exists for Si wires fabrication. The thicker or the thinner noble metal than the optimum thickness could not show well defined Si wire arrays. The solution composition observed in the highest etching rate was BOE(16.3ml)/$H_2O_2$(0.44M) in Au assisted chemical etching method. The morphology difference was compared between Au and Pt metal assisted chemical etching. The efficiencies of radial p-n junction solar Cells made of the Si wire arrays were also measured.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.6
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• pp.225-229
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• 2011

Most of the silicon cutting methods using the multi-wire with the slurry injection have been used for wafers of the crystalline solar cell. But the productivity of slurry injection cutting type falls due to low cutting speeds. Also, the direct contact with the metal wire and silicon block increases the concentration of metallic impurities in the wafer's surface. In addition, the abrasive silicon carbide (SiC) generates pollutants. And production costs are rising because it does not re-use the worn wire. On the other hand, the productivity of the cutting method using the diamond coated wire is about 2 times faster than the slurry injection cutting type. Also, the continuous cutting using the used wire of low wear is possible. And this is a big advantage for reduced production costs. Therefore, the cutting method of the diamond coated wire is more efficient than the slurry injection cutting technique. In this study, each cutting type is analyzed using the surface characteristics of the solar wafer and will describe the effects of the manufacturing process of the solar cell. Finally, we will suggest improvement methods of the solar cell process for using the diamond cutting type wafer.

• Resources Recycling
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• v.19 no.4
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• pp.41-50
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• 2010

A fundamental study was carried out to develop a process for recycling tungsten and cobalt from WC-Co hardmetal sludge generated in the manufacturing process of hardmetal tools. The complete extraction of cobalt and simultaneous formation of tungstic was achieved by treating the sludge using aqua regia. The effect of aqua regia concentration, reaction temperature and time, pulp density on cobalt leaching and tungstic acid formation was investigated. The complete leaching of cobalt was attained at the optimum conditions: 100 vol.% aqua regia concentration, $100^{\circ}C$ temperature, 60 min. reaction time and 400 g/L pulp density. A complete conversion of tungsten carbide of the sludge to tungstic acid was however, obtained at the pulp densities lower than 150 g/L under the above condition. The progress of reaction during the aqua regia treatment of the sludge was monitored through the XRD phase identification of the residue. The metallic impurities in the tungstic acid so produced could be further removed as insoluble residues by dissolving the tungsten values in ammonia solution. The ammonium paratungstate($(NH_4)_{10}{\cdot}H_2W_{12}O_{42}{\cdot}4H_2O$) of 99.85% purity was prepared from the ammonium polytungstate solution by the evaporation crystallization method.