• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.88.2-88.2
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• 2010

Dye-sensitized solar cells (DSSCs) have attracted considerable attention on account of their high solar energy-to-conversion efficiencies and low cost processes compared to conventional p-n junction solar cells. The mechanism of DSSC is based on the injection of electrons from the photo excited dyes into the conduction band of the semiconductor electrode. The oxidized dye is reduced by the hole injection into either the hole conductor or the electrolyte. Thus, the light harvesting effect of dye plays an important role in capturing the photons and generating the electron/hole pair, as well as transferring them to the interface of the semiconductor and the electrolyte, respectively. We used the organic fluorescence materials which can absorb short wavelength light and emit longer wavelength region where dye sensitize effectively. In this work, the DSSCs were fabricated with fluorescence materials added $TiO_2$ photo-electrode which were sensitized with metal-free organic dyes. The photovoltaic performances of fluorescence aided DSSCs were compared, and the recombination dark current curves and the incident photon-to-current (IPCE) efficiencies were measured in order to characterize the effects of the additional light harvesting effect in DSSC. Electro-optical measurements were also used to optimize the fluorescence material contents on TiO2 photo-electrode surface for higher conversion efficiency (${\eta}$), fill factor (FF), open-circuit voltage (VOC) and short-circuit current (ISC). The enhanced light harvesting effect by the judicious choice/design of the fluorescence materials and sensitizing dyes permits the enhancement of photovoltaic performance of DSSC.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.5
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• pp.1-7
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• 2002

Deep sub-micron bulk CMOS circuits require gate electrode materials such as metal silicide and titanium silicide for gate oxides. Many authors have conducted research to improve the quality of the sub-micron gate oxide. However, few have reported on the electrical quality and reliability of an ultra-thin gate. In this paper, we will recommend a novel shallow trench isolation structure and a two-step TiS $i_2$ formation process to improve the corner metal oxide semiconductor field-effect transistor (MOSFET) for sub-0.1${\mu}{\textrm}{m}$ VLSI devices. Differently from using normal LOCOS technology, deep sub-micron CMOS devices using the novel shallow trench isolation (STI) technology have unique "inverse narrow-channel effects" when the channel width of the device is scaled down. The titanium silicide process has problems because fluorine contamination caused by the gate sidewall etching inhibits the silicide reaction and accelerates agglomeration. To resolve these Problems, we developed a novel two-step deposited silicide process. The key point of this process is the deposition and subsequent removal of titanium before the titanium silicide process. It was found by using focused ion beam transmission electron microscopy that the STI structure improved the narrow channel effect and reduced the junction leakage current and threshold voltage at the edge of the channel. In terms of transistor characteristics, we also obtained a low gate voltage variation and a low trap density, saturation current, some more to be large transconductance at the channel for sub-0.1${\mu}{\textrm}{m}$ VLSI devices.

• Journal of Sensor Science and Technology
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• v.23 no.5
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• pp.332-336
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• 2014

In this paper, we propose a complementary metal oxide semiconductor (CMOS) binary image sensor with a gate/body-tied (GBT) PMOSFET-type photodetector for high-speed operation. The GBT photodetector of an active pixel sensor (APS) consists of a floating gate ($n^+$-polysilicon) tied to the body (n-well) of the PMOSFET. The p-n junction photodiode that is used in a conventional APS has a good dynamic range but low photosensitivity. On the other hand, a high-gain GBT photodetector has a high level of photosensitivity but a narrow dynamic range. In addition, the pixel size of the GBT photodetector APS is less than that of the conventional photodiode APS because of its use of a PMOSFET-type photodetector, enabling increased image resolution. A CMOS binary image sensor can be designed with simple circuits, as a complex analog to digital converter (ADC) is not required for binary processing. Because of this feature, the binary image sensor has low power consumption and high speed, with the ability to switch back and forth between a binary mode and an analog mode. The proposed CMOS binary image sensor was simulated and designed using a standard CMOS $0.18{\mu}m$ process.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.1
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• pp.1-4
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• 2001

We have fabricated and evaluated a new Si pin photodetector for APF optical link. The fabricated device has the $p^{+}$-guard ring around the metal-semiconductor contact and the web patterned $p^{+}$-shallow diffused region in the light absorbing area. From the measurements of electo-optical characteristics under the bias of -5 V, the junction capacitance of 4 pF and the dark current of 180 pA were obtained. The optical signal current of 1.22 $\mu$A and the responsivity of 0.55 A/W were obtained when the 2.2 $\mu$W optical power with peak wavelength of 670 nm was incident on the device. The fabricated device showed the maximum spectral response in a spectrum of 650-700 nm. It is expected that the fabricated device can be very useful for detecting the optical signal in the application of red light optics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.12
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• pp.806-811
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• 2017

An all-transparent ultraviolet (UV) photodetector was fabricated by structuring $p-NiO/n-SnO_2/ITO$ on a glass substrate. $SnO_2$ is an important semiconductor material because of its large bandgap, high electron mobility, high transmittance (as high as 80% in the visible range), and high stability under UV light. For these reasons, $SnO_2$ is suitable for a range of applications that involve UV light. In order to form a highly transparent p-n junction for UV detection, $SnO_2$ was deposited onto a device containing NiO as a high-transparent metal conductive oxide for UV detection. We demonstrated that all-transparent UV photodetectors based on $SnO_2$ could provide a definitive photocurrent density of $4nA\;cm^{-2}$ at 0 V under UV light (365 nm) and a low saturation current density of $2.02nA{\times}cm^{-2}$. The device under UV light displayed fast photoresponse with times of 31.69 ms (rise-time) and 35.12 ms (fall-time) and a remarkable photoresponse ratio of 69.37. We analyzed the optical and electrical properties of the $NiO/SnO_2$ device. We demonstrated that the excellent properties of $SnO_2$ are valuable in transparent photoelectric device applications, which can suggest various routes for improving the performance of such devices.

• Korean Journal of Materials Research
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• v.28 no.1
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• pp.38-42
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• 2018

Continuous efforts are being made to improve the efficiency of Si solar cells, which is the prevailing technology at this time. As opposed to the standard front-lit solar cell design, the back-lit design suffers no shading loss because all the metal electrodes are placed on one side close to the pn junction, which is referred to as the front side, and the incoming light enters the denuded back side. In this study, a systematic comparison between the two designs was conducted by means of computer simulation. Medici, a two-dimensional semiconductor device simulation tool, was utilized for this purpose. The $0.6{\mu}m$ wavelength, the peak value for the AM-1.5 illumination, was chosen for the incident photons, and the minority-carrier recombination lifetime (${\tau}$), a key indicator of the Si substrate quality, was the main variable in the simulation on a p-type $150{\mu}m$ thick Si substrate. Qualitatively, minority-carrier recombination affected the short circuit current (Isc) but not the opencircuit voltage (Voc). The latter was most affected by series resistance associated with the electrode locations. Quantitatively, when ${\tau}{\leq}500{\mu}s$, the simulation yielded the solar cell power outputs of $20.7mW{\cdot}cm^{-2}$ and $18.6mW{\cdot}cm^{-2}$, respectively, for the front-lit and back-lit cells, a reasonable 10 % difference. However, when ${\tau}$ < $500{\mu}s$, the difference was 20 % or more, making the back-lit design less than competitive. We concluded that the back-lit design, despite its inherent benefits, is not suitable for a broad range of Si solar cells but may only be applicable in the high-end cells where float-zone (FZ) or magnetic Czochralski (MCZ) Si crystals of the highest quality are used as the substrate.

• Safety and Health at Work
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• v.3 no.4
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• pp.257-267
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• 2012

Occupational neurotoxic diseases have become increasingly common in Taiwan due to industrialization. Over the past 40 years, Taiwan has transformed from an agricultural society to an industrial society. The most common neurotoxic diseases also changed from organophosphate poisoning to heavy metal intoxication, and then to organic solvent and semiconductor agent poisoning. The nervous system is particularly vulnerable to toxic agents because of its high metabolic rate. Neurological manifestations may be transient or permanent, and may range from cognitive dysfunction, cerebellar ataxia, Parkinsonism, sensorimotor neuropathy and autonomic dysfunction to neuromuscular junction disorders. This study attempts to provide a review of the major outbreaks of occupational neurotoxins from 1968 to 2012. A total of 16 occupational neurotoxins, including organophosphates, toxic gases, heavy metals, organic solvents, and other toxic chemicals, were reviewed. Peer-reviewed articles related to the electrophysiology, neuroimaging, treatment and long-term follow up of these neurotoxic diseases were also obtained. The heavy metals involved consisted of lead, manganese, organic tin, mercury, arsenic, and thallium. The organic solvents included n-hexane, toluene, mixed solvents and carbon disulfide. Toxic gases such as carbon monoxide, and hydrogen sulfide were also included, along with toxic chemicals including polychlorinated biphenyls, tetramethylammonium hydroxide, organophosphates, and dimethylamine borane. In addition we attempted to correlate these events to the timeline of industrial development in Taiwan. By researching this topic, the hope is that it may help other developing countries to improve industrial hygiene and promote occupational safety and health care during the process of industrialization.

• Korean Journal of Materials Research
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• v.30 no.10
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• pp.509-514
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• 2020

The two key variables of an Si solar cell, i.e., emitter (n-type window layer) and base (p-type substrate) doping levels or concentrations, are studied using Medici, a 2-dimensional semiconductor device simulation tool. The substrate is p-type and 150 ㎛ thick, the pn junction is 2 ㎛ from the front surface, and the cell is lit on the front surface. The doping concentration ranges from 1 × 10¹⁰ cm^-3 to 1 × 10²⁰ cm^-3 for both emitter and base, resulting in a matrix of 11 by 11 or a total of 121 data points. With respect to increasing donor concentration (Nd) in the emitter, the open-circuit voltage (Voc) is little affected throughout, and the short-circuit current (Isc) is affected only at a very high levels of Nd, exceeding 1 × 10¹⁹ cm^-3, dropping abruptly by about 12%, i.e., from Isc = 6.05 × 10^-9 A·㎛^-1, at Nd = 1 × 10¹⁹ cm^-3 to Isc = 5.35 × 10^-9 A·㎛^-1 at Nd = 1 × 10²⁰ cm^-3, likely due to minority-carrier, or hole, recombination at the very high doping level. With respect to increasing acceptor concentration (Na) in the base, Isc is little affected throughout, but Voc increases steadily, i.e, from Voc = 0.29 V at Na = 1 × 10¹² cm^-3 to 0.69 V at Na = 1 × 10¹⁸ cm^-3. On average, with an order increase in Na, Voc increases by about 0.07 V, likely due to narrowing of the depletion layer and lowering of the carrier recombination at the pn junction. At the maximum output power (Pmax), a peak value of 3.25 × 10^-2 W·cm^-2 or 32.5 mW·cm^-2 is observed at the doping combination of Nd = 1 × 10¹⁹ cm^-3, a level at which Si is degenerate (being metal-like), and Na = 1 × 10¹⁷ cm^-3, and minimum values of near zero are observed at very low levels of Nd ≤ 1 × 10¹³ cm^-3. This wide variation in Pmax, even within a given kind of solar cell, indicates that selecting an optimal combination of donor and acceptor doping concentrations is likely most important in solar cell engineering.