• Bulletin of the Korean Chemical Society
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• v.24 no.5
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• pp.573-578
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• 2003

The structural, magnetic, and transport properties of a mono-layered manganite $La_{0.7}Sr_{1.3}MnO_{4+{\delta}}$ were investigated using variable temperature neutron powder diffraction as well as magnetization and transport measurements. The compound adopts the tetragonal I4/mmm symmetry and exhibits no magnetic reflection in the temperature region of 10 K ≤ T ≤ 300 K. A weak ferromagnetic (FM) transition occurs about 130 K, which almost coincides with the onset of a metal-insulator (M-I) transition. Extra oxygen that occupies the interstitial site between the [(La,Sr)O] layers makes the spacing between the [MnO₂] layers shorten, which enhances the inter-layer coupling and eventually leads to the M-I transition. We also found negative magneto resistance (MR) below the M-I transition temperature, which can be understood on the basis of the percolative transport via FM metallic domains in the antiferromagnetic (AFM) insulating matrix.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.143.2-143.2
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• 2013

Nanomechanical and electrical properties of vanadium dioxide (VO2) thin films across thermal-driven phase transition are investigated with ultra-high vacuum atomic force microscopy. VO2 thin films have been deposited on the n-type heavily doped silicon wafer by pulsed laser deposition. X-ray diffraction reveals that it is textured polycrystalline with preferential orientation of (100) and (120) planes in monoclinic phase. As the temperature increases, the friction decreased at the temperature below the transition temperature, and then the friction increased as increasing temperature above the transition temperature. We attribute this observation to the combined effect of the thermal lubricity and electronic contribution in friction. Furthermore, the dependence of nanoscale conductance on the local pressure was indicated at the various temperatures, and the result was discussed in the view of pressure-induced metal-insulator transition.

• Bulletin of the Korean Chemical Society
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• v.27 no.3
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• pp.363-367
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• 2006

The structure-property relations of ternary copper chalcogenides, $TlCu_{3-x}S_2$ and $\alpha-BaCu_{2-x}S_2$ are examined. The density of states, band dispersions, and Fermi surfaces of these compounds are investigated to verify the reason of the metal-insulator transitions by extended Huckel tight-binding band calculations. The origin of the metalinsulator transitions of non-stoichiometric $TlCu_{3-x}S_2$ and $\alpha-BaCu_{2-x}S_2$ is thought to be the electronic instability induced by their Fermi surface nesting.

• Proceedings of the Optical Society of Korea Conference
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• 2004.02a
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• pp.54-55
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• 2004

• Electronics and Telecommunications Trends
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• v.27 no.5
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• pp.10-17
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• 2012

MIT(Metal-Insulator Transition) 물질은 온도와 전기장과 같은 외부자극에 의해 절연체에서 금속으로 전이할 때 전기적 저항이 급격하게 감소하는 물질을 말한다. 그 감소폭은 약 $10^4{\sim}10^5$배 정도로 이전에 볼 수 없었던 아주 큰 값이다. 또한 이러한 급격한 감소로 인하여 NDR(Negative Difference Resistance) 같은 현상이 발생하며, 외부에서 주어지는 광학적 에너지에 의하여 전이가 일어나기도 한다. 이러한 여러 현상들을 이용하여 전자소자가 개발되고 그에 따른 응용 분야도 활발하게 연구가 진행되고 있다. 이러한 시도는 MIT 물질의 단독으로 제조된 소자뿐만 아니라 기존의 전자소자와 병행하여 더욱 시너지를 발휘할 것으로 예측된다. 본고에서는 MIT 현상의 간략한 설명과 현재 기술의 발전 방향, 간단한 응용소자에 관하여 개괄적으로 기술하고자 한다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.196.1-196.1
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• 2014

VO2 exhibits metal-insulator transition (MIT), of which critical temperature (TC) is about 340 K. There have been many reports that MIT can be induced by UV light as well as heat. Clear mechanism regarding such photo-induced MIT has not been clarified. We have compared the MIT behaviors of VO2 thin film during heating-cooling cycles with and without light. We tried several light sources with different wavelengths (red, blue, and UV). Tc and hysteresis width of the resistance change were influenced by the illumination of the samples. We performed Kelvin probe force microscopy (KPFM) studies, which can reveal the evolution of the local sample work function. In this presentation, we will discuss possible physical origins for the photo-induced effects on the MIT behaviors of the VO2 samples.

• Ceramist
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• v.22 no.1
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• pp.17-26
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• 2019

The metal-to-insulator transition (MIT) with external stimuli is one of the main issues in correlated oxides. The physical properties are extremely sensitive to band filling, because the MIT is attributed to the strong correlation between electrons in narrow d-band. Since hydrogen is the smallest and lightest element, it is not only likely to doped reversibly in oxides, but also acts as a dopant to provide electrons. The correlated oxides showing MIT are structurally expanded after hydrogenation, and their electrical properties are drastically changed. Researches on this phenomenon have been actively carried out to date. They are of great scientific importance, and the use of this material is very diverse, including the development of next-generation hydrogen sensor, or hydrogen-based neuromorphic devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.555-558
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• 2000

Layered perovskite La$_{2-x}$Ca$_{l-x}$Mn$_2$O$_{7}$ phases were synthesized by solid state reaction. Single phase R-P could be obtained in the range of 0.4$_{2-x}$Ca$_{l-x}$Mn$_2$O$_{7}$. About 30% of MR ratio was obtained at 270K when 5 T of magnetic field was applied.ied.ied.ied.

• Bulletin of the Korean Chemical Society
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• v.17 no.1
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• pp.43-45
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• 1996

Structural and electronic properties of an alkali metal fulleride, Rb1C60, was studied. In spite of the chain structure with shortdistance between balls along the crystallographic a-direction, the electronic structure calculation study with the X-ray defined crystal structure shows that Rb1C60 is a three-dimensional metal at room temperature. This result is different from the magnetic experiments in which the compound was found to behave as a quasi-one-dimensional metal. Partial Fermi surface nesting is supposed to be the reason for the metal-insulator transition found in Rb1C60 at ∼50 K.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.169.2-169.2
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• 2015

$VO_2$ is a well-known a metal-to-insulator-transition (MIT) material, accompanied with a first order structural phase transition near room temperature. Because of the structural phase transition and the MIT occur near a same temperature, there is an ongoing argument whether the MIT is induced by the structural phase transition. $VO_2$ exhibits a relatively weak anti-oxidization ability and can be oxidized to higher-valence oxides (e.g., $V_4$ $O_7$ or $V_2$ $O_5$) when annealed at a high temperature in an oxygen-rich atmosphere. We fabricated $VO_2$ films on $Al_2$ $O_3$ (0001) substrates using a DC magnetron sputtering deposition process with carefully control the $O_2$ percentage in an atmosphere. X-ray diffraction measurements from the films showed only (0l0) peaks with no extra peaks, indicating b-oriented films. The temperature-dependent local structural properties of $VO_2$ films were investigated by using in-situ X-ray absorption fine structure (XAFS) measurements at the V K edge. XAFS revealed that the structural phase transition was occurred nearly $70^{\circ}C$ for heating process and reproducible. Resistance measurements as a function of temperature (R-T) demonstrated that the resistance of $VO_2$ films was changed by a factor of 4 near $75^{\circ}C$ which was higher than $68^{\circ}C$ reported from a $VO_2$ bulk. We will discuss the MIT of $VO_2$ films, comparing with the local structural properties determined by XAFS measurements.