• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.3
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• pp.198-206
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• 2013

This paper presents a wide band, fine-resolution digitally controlled oscillator (DCO) with an on-chip 3-D solenoid inductor using the 0.13 ${\mu}m$ digital CMOS process. The on-chip solenoid inductor is vertically constructed by using Metal and Via layers with a horizontal scalability. Compared to a spiral inductor, it has the advantage of occupying a small area and this is due to its 3-D structure. To control the frequency of the DCO, active capacitor and active inductor are tuned digitally. To cover the wide tuning range, a three-step coarse tuning scheme is used. In addition, the DCO gain needs to be calibrated digitally to compensate for gain variations. The DCO with solenoid inductor is fabricated in 0.13 ${\mu}m$ process and the die area of the solenoid inductor is 0.013 $mm^2$. The DCO tuning range is about 54 % at 4.1 GHz, and the power consumption is 6.6 mW from a 1.2 V supply voltage. An effective frequency resolution is 0.14 kHz. The measured phase noise of the DCO output at 5.195 GHz is -110.61 dBc/Hz at 1 MHz offset.

• ETRI Journal
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• v.46 no.3
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• pp.550-563
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• 2024

A novel inductance simulation circuit employing only two dual-output voltage-differencing buffered amplifiers (DO-VDBAs) and a single capacitance (grounded) is proposed in this paper. The reported configuration is a purely resistor-less realization that provides electronically controllable realized inductance through biasing quantities of DO-VDBAs and does not rely on any constraints related to matched values of parameters. This structure exhibits excellent behavior under the influence of tracking errors in DO-VDBAs and does not exhibit instability at high frequencies. The simple and compact metal-oxide semiconductor (MOS) implementation of the DO-VDBAs (eight MOS per DO-VDBA) and adoption of grounded capacitance make the proposed circuit suitable for on-chip realization from the perspective of chip area consumption. The function of the pure grounded inductance is validated through high pass/bandpass filtering applications. To test the proposed design, simulations were performed in the PSPICE environment. Experimental validation was also conducted using the integrated circuit CA3080 and operational amplifier LF-356.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.18 no.6
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• pp.69-74
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• 2018

In this paper, We investigated the effects of mesh structure variations of meshed ground on MCAA(Microstrip Comb Array Antenna). First, we designed MCAA in 24GHz ISM band and we investigated the variations of the gain and the SLL(Side Lobe Level) of the MCAA as we varied the mesh structure of the meshed ground. We varied two variables, mesh size and unfilled rato, which is defined as no metal area ratio in mesh for the investigation. We investigated two types of MCAA. Those are flat MCAA composed of flat radiator and tapered MCAA composed of tapered radiator. Both the antenna gains of flat MCAA and tapered MCAA are decreased as the unfilled rato increased. However, increase of mesh size made more dramatic decrease in antenna gain than increase of unfilled rato. The antenna SLL showed similar trend. But tapered MCAA affected more severely by variation of mesh size than flat MCAA.

• The Journal of the Korea institute of electronic communication sciences
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• v.14 no.1
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• pp.87-96
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• 2019

Flexible organic light-emitting diode (OLED) displays with organic thin-film transistors (OTFTs) backplanes have been studied. A gate driver is required to drive the OLED display. The gate driver is integrated into the panel to reduce the manufacturing cost of the display panel and to simplify the module structure using fabrication methods based on low-temperature, low-cost, and large-area printing processes. In this paper, pseudo complementary metal oxide semiconductor (CMOS) logic gates are implemented using OTFTs for the gate driver integrated in the flexible OLED display. The pseudo CMOS inverter and NAND gates are designed and fabricated on a flexible plastic substrate using inkjet-printed OTFTs and the same process as the display. Moreover, the operation of the logic gates is confirmed by measurement. The measurement results show that the pseudo CMOS inverter can operate at input signal frequencies up to 1 kHz, indicating the possibility of the gate driver being integrated in the flexible OLED display.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.1
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• pp.50-55
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• 2020

Porcelain insulators have been used for a long time in 154 kV power transmission lines. They are likely to be exposed to sudden failure because of product deterioration. This study was conducted to evaluate the quality of porcelain insulators. After stresses were applied, the damaged regions of aged insulators were investigated in terms of chemical composition, material structure, and other properties. For porcelain insulators that were in service for a long time, the mechanical failure load was 126 kN, whereas the average mechanical failure load was 167.3 kN for new products. It was also determined that corrosion occurred at the metal pin part due to the penetration of moisture into the gap between the pin and the ceramic. Statistical analyses of failure were performed to identify the portion of the insulators that were broken. Cristobalite porcelain insulators fabricated without alumina additives had a high failure rate of 54% for the porcelain component. In the case of the addition of Alumina (Al₂O₃) to the porcelain insulators to improve the strength of the ceramic component, a more frequent damage rate of the cap and pin of 73.3% and 27%, respectively, was observed. This study reports on the material component of SiO₂ and the percentage of alumina added, with respect to the mechanical properties of porcelain insulators.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.2 no.4
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• pp.643-652
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• 1998

This paper presents the characteristics of a relay station antenna with the newly designed back-plate structure which is composed of the U-shaped metal plate for suppression of the back lobe by edge diffraction. The back lobe level of the conventional type was about -20 dB in the -z direction ( 180 ) . In order to improve the characteristics, the U-shaped mesh type metal plate is considered, where the design condition of the model antenna satisfies the wide null point angle range with the back lobe level of -30 dB below in the -z direction. The design parameters with the minimum back lobe level such as the dipole length, the distance between dipole elements and the back plate size have been found by using the released NEC Win Pro code. The calculated and measured back lobe Bevel of model antenna have been obtained 48.48 dB and -45 dB at 325 MHz, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.5
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• pp.1-7
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• 2002

Deep sub-micron bulk CMOS circuits require gate electrode materials such as metal silicide and titanium silicide for gate oxides. Many authors have conducted research to improve the quality of the sub-micron gate oxide. However, few have reported on the electrical quality and reliability of an ultra-thin gate. In this paper, we will recommend a novel shallow trench isolation structure and a two-step TiS $i_2$ formation process to improve the corner metal oxide semiconductor field-effect transistor (MOSFET) for sub-0.1${\mu}{\textrm}{m}$ VLSI devices. Differently from using normal LOCOS technology, deep sub-micron CMOS devices using the novel shallow trench isolation (STI) technology have unique "inverse narrow-channel effects" when the channel width of the device is scaled down. The titanium silicide process has problems because fluorine contamination caused by the gate sidewall etching inhibits the silicide reaction and accelerates agglomeration. To resolve these Problems, we developed a novel two-step deposited silicide process. The key point of this process is the deposition and subsequent removal of titanium before the titanium silicide process. It was found by using focused ion beam transmission electron microscopy that the STI structure improved the narrow channel effect and reduced the junction leakage current and threshold voltage at the edge of the channel. In terms of transistor characteristics, we also obtained a low gate voltage variation and a low trap density, saturation current, some more to be large transconductance at the channel for sub-0.1${\mu}{\textrm}{m}$ VLSI devices.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.24 no.9B
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• pp.1668-1675
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• 1999

In this thesis, a narrowband bandpass filter using HTS is proposed for the multiplexer of the satellite communication subsystems. The proposed structure using HTS provides the narrower band and the lower insertion loss characteristics than the conventional parallel-coupled-line bandpass filter. The filter structure using hairpin-line only cause the spurious modes due to the surface waves. But these modes can be lessened by using the hybrid hairpin-line/parallel-coupled-line proposed in this thesis. The narrowband bandpass filters using HTS at the operation frequency of 14.25 GHz are fabricated to have the narrow bandwidth less 1% and the insertion loss less 3dB in comparison with the normal metal microstrip filter with the same three poles. The experimental results show that the filter using HTS has the characteristics of the narrower bandwidth and less insertion loss and can be fabricated with more compact size in comparison with the bandpass filter using normal metal.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.05a
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• pp.125-128
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• 2008

In this paper, a stand-type planar antenna of 900MHz RFID band is designed and fabricated. As the proposed antenna is stand-type use of air permittivity, Bandwidth used ground height at rectangle patch structure and coaxial feed line is widen. Also wideband width can solve problem that RFID tag attached to things happens frequency shift keying phenomenon by liquid, special metal, temperature, humidity etc. Bandwidth of fabricated antenna to VSWR less than 2 is satisfied 11.9% at $890MHz{\sim}1000MHz$. And proposed antenna is circular polarization antenna of operating characteristics that axial ratio is less than 2 and gain is 6dBi.

• Journal of the Semiconductor & Display Technology
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• v.10 no.4
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• pp.131-138
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• 2011

We fabricated distributed feedback InGaAsP/InP laser diodes for optical fiber communication module and characterized the lasing properties in continuous wave operation. The active layer of 7-period InGaAsP(1.127 eV)/InGaAsP(0.954 eV) multi-quantum well structure was grown by the metal-organic chemical vapor deposition. The grating for waveguide was also fabricated by the implementation of the Mach-Zehender holographic method of two laser beams interference of He- Cd laser and the fabricated laser diode has the dimension of the laser length of $400{\mu}m$ and the ridge width of $1.2{\mu}m$. The laser diode shows the threshold current of 3.59 mA, the threshold voltage of 1.059 V. For the room-temperature operation with the current of 13.54 mA and the voltage of 1.12 V, the peak wavelength is about 1309.70 nm and optical power is 13.254 mW.