• Bulletin of the Korean Chemical Society
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• v.22 no.1
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• pp.19-24
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• 2001

A solvent sublation has been studied for the determination of trace Au(III), Pt(IV) and Pd(II) in waste water with their complexes of 2-mercaptobenzothiazole (MBT). Experimental conditions such as the concentration of HCl, the amount of MBT as a ligand, the type and amount of surfactants, bubbling rate and time, and the type of organic solvent were optimized for the solvent sublation, i.e., 25.0 mL of 2.0 M HCl solution and 30mL of 0.4%(w/v) MBT ethanolic solution were added to a 1.0 L sample to form stable complexes. The addition of 4.0 mL of 1 ${\times}$$10^{-3}$ M CTAB (cetyltrimehtylammonium bromide) solution was needed for the effective flotation accomplished by bubbling nitrogen gas at the rate of 40.0 mL/min for 35 minutes. As a solvent, 20.0 mL of MIBK (methylisobuthylketone) was used to extract the floated complexes. The procedure was applied to three kinds of waste waters. Au(III) was determined as 0.68 ng/mL and 0.98 ng/mL respectively for final washed water of two plating industries in Banwol. Pd(II) and Pt(IV) were not detected in any of the three samples. The recovery, which was obtained with analyte-spiked samples, were 95-120%.

• Journal of Radiation Industry
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• v.9 no.4
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• pp.167-170
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• 2015

Radioisotope (Nuclear) battery using $^{63}Ni$ was prepared as beta cell. The electroplated $^{63}Ni$ on Ni foil is fabricated, and beta cell and photovoltaic hybrid battery was designed to use at both day and night in space project. A Ni-plating solution is prepared by dissolving metal particles including $^{62}Ni$ and $^{63}Ni$ from neutron irradiation of ($n,{\gamma}$). Electroplating solution of a chloride bath consists on nickel ions in HCl, $H_3BO_3$, and KOH. The deposition was carried out at current density of $10mA\;cm^{-2}$. The prepared beta source was attached on a PN junction and measured I-V properties. The power output at activity of 0.07 mCi and 0.45 mCi were 0.55 pW and 2.69 nW, respectively.

• Journal of the Korean institute of surface engineering
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• v.54 no.5
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• pp.285-293
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• 2021

High-entropy TiAlCrSiN nano-composite coating was designed to improve mold life for high temperature liquid molding. Alloy design, powder fabrication and single alloying target fabrication for the high-entropy nano-composite coating were carried out. Using the single alloying target, an arc ion plating method was applied to prepare a TiAlCrSiN nano-composite coating had a 30 nm TiAlCrSiN layers are deposited layer by layer, and form about 4 ㎛-thickness of multi-layered coating. TiAlCrSiN nano-composite coating had a high hardness of about 39.9 GPa and a low coefficient of friction of less than about 0.47 in a dry environment. In addition, there was no change in the structure of the coating after the dissolution loss test in the molten metal at a temperature of about 1100 degrees.

• Journal of Electrochemical Science and Technology
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• v.12 no.4
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• pp.387-397
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• 2021

Deep eutectic solvents have been established as feasible metal electroplating solvent alternatives over traditional toxic aqueous plating baths. However, water, either added intentionally or unintentionally, can significantly influence the solvent's physical properties and performance, thereby hindering its industry application. In this study, the hygroscopicity, or the ability to absorb moisture from the environment, of synthesized ethaline (1:2 choline chloride:ethylene glycol) was investigated. The kinematic viscosity, electrical conductivity, electrochemical window, and water content of ethaline were monitored over a 2-week period. Karl Fischer titration tests showed that ethaline exposed to the atmosphere displayed significant hygroscopicity compared to its unexposed counterpart. ¹H NMR spectroscopy revealed that water vapor was readily absorbed at the surface due to the hydrophilic groups present in the ethaline molecule. Water uptake resulted in the decrease in viscosity, increase in electrical conductivity and narrowing of the electrochemical window of ethaline. Solution heating at 100℃ removed the absorbed moisture and allowed the recovery of the solvent's initial properties.

• Progress in Superconductivity and Cryogenics
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• v.25 no.4
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• pp.24-27
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• 2023

Until now, many research activities have been conducted to commercialize high-temperature superconducting (HTS) wires for electric applications. Most of all researchers have focused on enhancing the piece length, critical current density, mechanical strength, and throughput of HTS wires. Recently, HTS magnet for generating high magnetic field shows degraded performance due to the deformation of HTS wire by high electro-magnetic force. The deformation can be derived from widthwise thickness non-uniformity of HTS wire mainly caused by wet processes such as electro-polishing of metal substrate and electro-plating of copper. Gradient sputtering process is designed to improve the thickness uniformity of HTS wire along the width direction. Copper stabilizing layer is deposited on HTS wire covered with specially designed mask. In order to evaluate the thickness uniformity of HTS wire after gradient sputtering process, the thickness distribution across the width is measured by using the optical microscope. The results show that the gradient deposition process is an effective method for improving the thickness uniformity of HTS wire.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.4
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• pp.13-16
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• 2013

A lot of various researches have been going on to use heat spreader for LED module. Nano porous aluminum anodic oxide (AAO) applied LED, which is produced from anodization, is easy and economically advantageous. Convensional LED module is consist of aluminum/adhesive/copper circuit. The polymer adhesive in this module is used as heat spreader. However the thermal emission of LED component is degraded because of low heat conductivity of polymer and also reliability of LED component is reduced. Therefore, AAO in this work was applied to heat spreader of LED module which has higher heat conductivity compare to polymer. Bonding strength between AAO and copper circuit was improved with Ti/Cu seed layer by copper sputtering process (DBC) before the bonding. And this copper circuit has been fabricated by electro plating method. Peel strength of AAO and copper circuit in this work showed range between 1.18~1.45 kgf/cm with anodizing process which is very suitable for high power LED application.

• Composites Research
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• v.28 no.6
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• pp.333-339
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• 2015

Electromagnetic interference shielding composite with low density ($1.18g/cm^3$) was fabricated using electroless plated FeCo magnetic metal hollow fibers and ethylene propylene diene monomer (EPDM) polymer. Aspect ratio of the fibers were controlled and their hollow structure was obtained by heat treatment process. The FeCo hollow fibers were then mixed with EPDM to manufacture the composite. The higher aspect ratio of the magnetic metal hollow fibers resulted in high electromagnetic interference shielding effectiveness (30 dB) of the composite due to its low sheet resistance (30 ohm/sq). The enhanced electromagnetic interference shielding effectiveness was mainly attributed to the formation of conducting network over the percolation threshold by high aspect ratio of fibers as well as an increase of the reflection loss by impedance mismatch owing to low sheet resistance, absorption loss, and multiple internal reflections loss.

• The Journal of Korean Academy of Prosthodontics
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• v.34 no.3
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• pp.620-631
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• 1996

Bonding of resin to cast alloy has traditionally been provided by mechanical retention. But, chemical bonding methods such as silicoating, tin plating, heat treatment, application of 4-META adhesives, have been developed to overcome the problems of the mechanical bonding methods. Silicoating has been used availaby in fixed prosthodontics, but is also reported to be used in removable prosthodontics. The aim of this study is to measure the tensile bond strength between resin and metal, and compare the effect of the type of metal and the grain size of the aluminum oxide on the bond strength, after metal surface roughening, coating of the opaque resin, and curing of heat-curing resin were performed. The test groups were divided into 4 groups according to the cast alloys and the aluminum oxide particles used. Group 1 : Type 4 gold alloy(DM66) blasted with $$50{\mu}m\;Al_{2}O_3$$ Group 2 : Type 4 gold alloy(DM66) blasted with $$250{\mu}m\;Al_{2}O_3$$, Group 3 : Co-Cr alloy(Nobilium) blasted with $$50{\mu}m\;Al_{2}O_3$$ Group 4 : Co-Cr alloy(Nobilium) blasted with $$250{\mu}m\;Al_{2}O_3$$ * 10 test specimens were made on each group. The specimens were thermocycled, and Instron Universal testing machine was used to measure the tensile bond strength of the finished specimens. The results were as follows : 1. Bond strengths showed that the group of gold alloy blasted with $250{\mu}m$ aluminum oxide particle had higher bond strength, and the group of gold alloy blasted with $50{\mu}m$ aluminum oxide particles had lower bond strength than any of the other groups. 2. Gold alloy had significantly higher bond strength when blasted with $250{\mu}m$ aluminum oxide particles than $50{\mu}m$, but. Co-Cr alloy showed no statistically significant difference between the two particle sizes. 3. When blasted with $50{mu}m$ aluminum oxide particles, Co-Cr alloy showed significantly higher bond strength than gold alloy. And, when blasted with $250{\mu}m$ aluminum oxide particles, gold alloy had significantly higher bond strength than Co-Cr alloy. 4. On the examination of the fractured sites, only the group of Co-Cr alloy blasted with $50{\mu}m$ aluminum oxide particles showed a part of residual opaque resin, but all the samples of the other groups fractured between the resin and the metal.

• Korean Journal of Heritage: History & Science
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• v.53 no.2
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• pp.242-253
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• 2020

Six ornamental metal quiver fittings were excavated from stone chamber No.1 of the ancient tombs of Jeongchon, Bokam-ri, Naju. The ornamental quiver fittings are metal, but the body of the quiver was made of organic material, so that it corroded and disappeared in the burial environment. The ornamental metal quiver fittings were made in pairs, and decorated one quiver according to the location they were found in and their forms. The ornamental metal quiver fitting can be divided into two types: A band style ornament (帶輪狀金具) which decorates the arrow pouch, and a board style ornament (板狀金具) which decorates the board connecting the waist belt. Two ornamental metal quiver fittings excavated from wooden coffin 2 of stone chamber No.1, were made in the band style, while the ornamental metal quiver fittings from southeast of stone chamber No.1 were identified as two boardstyle ornaments and two band-style ornaments for what was presumed to be belt loops. Material analysis of the ornamental metal quiver fittings shows that they are made of a gilt bronze plate attached to an iron plate, and the surface is marked with a speck of chisel to make lines and patterns. Chemical composition analysis (XRF) established that 24~40wt% Au and 50~93wt% Cu were detected on the gold surface, and it was confirmed that bronze corrosion had taken place on the gilt surface. SEM-EDS analysis of the gold plating layer identified a working line for glossing, and 7~9wt% Hg and an amalgam of gilt layers was detected, confirming the amalgam gilding. CT and FT-IR analysis established that the band style was double-layered with silk fabric under the iron plate, and there was also a lacquer piece underneath. The band-style ornaments have two layers of silk under the iron plate, along with lacquer pieces. Adding the fabric to the arrow pouch increases adhesion and decorative value. It is assumed that the lacquer pieces indicate that the surface of the lacquered arrow pouch had fallen together with the ornaments. On the other hand, the board-style ornaments have a thick layer of organic matter under the iron plate, but this is difficult to identify and appears to be a remnant of the quiver board. The characteristics of these ornamental metal quiver fittings were similar in Baekje, Silla, and Gaya cultures from the late 4th to the late 5th centuries, and enable us to identify the art of ancient gold craftwork at that time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.239-240
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• 2008

As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.