• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.6
• /
• pp.582-586
• /
• 2005

We have grown GaN layers with in-situ SiN mask by metal organic chemical vapor deposition (MOCVD) and study the physical properties of the GaN layer. We have also investigate the effect of the SiN mask on its optical property. By inserting a SiN mask, (102) the full width at half maximum (FWHM) decreased from 480 arcsec to 409 arcsec and threading dislocation (TD) density decreased from $3.21\times10^9\;cm^{-2}\;to\;9.7\times10^8\;cm^{-2}$. The PL intensity of GaN with SiN mask improved 2 times to that without SiN mask. We have thus shown that the SiN mask improved significantly the physical and optical properties of the GaN layer.

• Journal of the Korean Ceramic Society
• /
• v.33 no.9
• /
• pp.969-976
• /
• 1996

RuO2 thin films were deposited on SiO2(1000 $\AA$)/Si by hot-wall Metal Organic Chemical Vapor Depositon. The crystallinity of RuO2 thin films increased with increasing deposition temperature and the preferred orienta-tion of RuO2 films converted (200) plane to (101) plane with increasing film thicknesses. Such a change in preferred orientation was influenced on the crystallographic structure and the residual stress of RuO2 thin films. The resistivity of the 2700$\AA$-thick RuO2 thin films deposted at 30$0^{\circ}C$ was 52.7$\mu$$\Omega$-cm and they could be applicable to bottom electrodes of high dielectric materials. However the resistivity of RuO2 thin films increased with decreasing film thicknesses. The grain size and the resistivity of RuO2 thin films were densified with increasing the annealing temperature and showed the decrease of resistivity.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2003.12a
• /
• pp.45-49
• /
• 2003

본 논문에서는 gate 산화막을 위한 Hf oxide 박막을 $Hf(dmae)_4$ (dmae=dimethylaminoethoxide) 전구체로 Direct Liquid Injection Metal Organic Chemical Vapor Deposition (DLI-MOCVD)방법을 이용하여 p-type Si(100) 기판 위에 증착하였다. 이 전구체를 이용하여 $150^{\circ}C$의 낮은 증착 온도에서도 낮은 carbon 농도와 roughness를 가지는 양질의 박막을 증착할 수 있었다. 증착된 박막은 비정질 구조를 나타내었지만 annealing 온도를 증가시킴에 따라서 결정성(monoclinic phase)을 나타내었다. $500{\AA}$으로 증착한 박막을 C-V 와 I-V curve를 통하여 전기적 특성을 평가하였다. 열처리 온도가 증가함에 따라 유효유전상수(k)는 증가하지만 열처리 온도가 $900^{\circ}C$ 이상이 되면 계면층의 형성에 의해 유효유전상수는 감소하게 되고 이에 따라 누설 전류도 감소하게 된다. 산소분위기 $800^{\circ}C$에서 annealing한 $HfO_2$ 박막의 유전상수는 20.1이고, 누설 전류 밀도는 SV에서 $2.2\times10^{-6}A/\textrm{cm}^2$ 로 좋은 전기적 특성을 가진다.

• Journal of the Korean Ceramic Society
• /
• v.37 no.11
• /
• pp.1126-1129
• /
• 2000

The crystallographic orientations of $Ba_{0.6}$S $r_{0.4}$Ti $O_3$(BST) thin film deposited by a metal-organic chemical vapor deposition on (111) textured Pt electrode were studied with a transmission electron microscopy. The fully crystallized BST thin film (50nm) has (100) and (110) preferred orientations. A high resolution transmission electron microscopy study has revealed the crystallographic orientation relationships between BST thin film and Pt electrode. These relationships explained the preferred orientation of BST film on (111) textured Pt electrode. With these results, we could represent the atomic arrangement at the BST/Pt interface.e.e.

• Progress in Superconductivity and Cryogenics
• /
• v.10 no.2
• /
• pp.12-15
• /
• 2008

Nano-sized dots have been formed on the buffered metal substrates using the novel approach of the electro-spray deposition, to modulate the substrate surface and induce the columnar defects in REBCO films grown on it. The $BaZrO_3$ precursor solution was synthesized and electro-sprayed out onto the negatively charged substrate surface. Using the electrostatic force, nano-sized dots can be grown and uniformly distributed on the buffered metal substrate. The height of BZO nanodots was observed above the 200nm, which are beneficial to induce the columnar defects onto the BZO as a seed. The density of BZO nanodots was also investigated and ${\sim}7.8/{\mu}m^2$ was obtained. As the deposition distance of electro-spray was shortened there was ${\sim}8times$ increase of density of nanodots. The optimization of process variables in electro-spray deposition are discussed in respect to the superconducting REBCO films processed by the Metal-Organic Deposition with the effective flux pinning properties.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1994.11a
• /
• pp.9-9
• /
• 1994

• Proceedings of the Korea Crystallographic Association Conference
• /
• 2007.11a
• /
• pp.34-34
• /
• 2007

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2007.11a
• /
• pp.60.2-60.2
• /
• 2007

• Proceedings of the Korean Vacuum Society Conference
• /
• 2009.02a
• /
• pp.177.1-177.1
• /
• 2009

• Proceedings of the Korean Ceranic Society Conference
• /
• 2000.04a
• /
• pp.38.1-38.1
• /
• 2000