• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.219-220
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• 2000

We propose a new method for the formation of an aluminum parting layer in the fabrication of field emitter arrays, in which we used a reflow property of aluminum at a lower temperature than the deformation point of glass. After the sputtered aluminum layer on the gate metal was etched for the formation of gate holes, we carried out a rapid thermal annealing process, by which the aluminum slightly diffused into the gate hole. This reflowed aluminum could be used as a parting layer and emitter arrays were easily fabricated using this method.

• Korean Journal of Metals and Materials
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• v.49 no.4
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• pp.304-312
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• 2011

In this study, MOSFET type micro hydrogen gas sensors with platinum catalytic metal gates were designed, fabricated, and their electrical characteristics were analyzed. The devised MOSFET Hydrogen Sensors, called MHS-1 and -2, were designed with a platinum gate for hydrogen gas adsorption, and an additional sensing part for higher gas sensitivity and with a micro heater for operation temperature control. In the electrical characterization of the fabricated Pt-gate MOSFET (MHS-1), the saturated drain current was 3.07 mA at 3.0 V of gate voltage, which value in calculation was most similar to measurement data. The amount of threshold voltage shift and saturated drain current increase to variation of hydrogen gas concentration were calculated and the hydrogen gas sensing properties were anticipated and analyzed.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1214-1218
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• 2006

We introduced simple fabrication process for field emission devices based on carbon nanotubes (CNTs) emitters. Instead of using the ITO material as a transparent electrode, a metal (Au) with thickness of 5-20nm was used. Moreover, the ITO patterning process was eliminated by depositing metal layer, before the CNT printing process. In addition, the thin metal layer on photo resist (PR) layer was used as UV block. We fabricated the CNT field emission arrays of triode structure with simple process. And I-V characteristics of field emission arrays were measured. The maximum current density of $254{\mu}A/cm2$ was achieved when the gate and the anode voltage was kept 150V and 3000V, respectively. The distance between anode and cathode was kept constant.

• Journal of Korea Foundry Society
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• v.27 no.4
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• pp.153-158
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• 2007

Molten metal flow in vacuum die casting was characterized by a numerical analysis. The VOF method was used to simulate the filling behaviors of molten metal during filling process. The various vacuum degrees of no vacuum(760 mmHg), 650, 500, 250 and 60mmHg were artificially applied in cavity. And the filling behaviors of molten metal with the applied vacuum conditions were simulated and compared with those of experiment. The results showed that molten metal was partially filled into cavity when vacuum was applied and the filling length of molten metal in cavity was increased with increasing applied reduced pressure in cavity. Also, the simulated filling behaviors of molten metal were apparently similar to those of experiment, indicating the numerical analysis developed in this study was highly effective. Through the result of fluid flow simulation, both relation equations of filling length and filling velocity with the variation of pressure conditions in cavity were calculated respectively and the internal gas contents of casting was significantly reduced by the modification of vacuum gate system.

• Journal of Korean Society of Industrial and Systems Engineering
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• v.42 no.1
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• pp.1-7
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• 2019

In the modern industrial period, the introduction of mass production was most important progress in civilization. Die-casting process is one of main methods for mass production in the modern industry. The aluminum die-casting in the mold filling process is very complicated where flow momentum is the high velocity of the liquid metal. Actually, it is almost impossible in complex parts exactly to figure the mold filling performance out with the experimental knowledge. The aluminum die-castings are important processes in the automotive industry to produce the lightweight automobile bodies. Due to this condition, the simulation is going to be more critical role in the design procedure. Simulation can give the best solution of a casting system and also enhance the casting quality. The cost and time savings of the casting layout design are the most advantage of Computer Aided Engineering (CAE). Generally, the relations of casting conditions such as injection system, gate system, and cooling system should be considered when designing the casting layout. Due to the various relative matters of the above conditions, product defects such as defect extent and location are significantly difference. In this research by using the simulation software (AnyCasting), CAE simulation was conducted with three layout designs to find out the best alternative for the casting layout design of an automotive Oil Pan_BJ3E. In order to apply the simulation results into the production die-casting mold, they were analyzed and compared carefully. Internal porosities which are caused by air entrapments during the filling process were predicted and also the results of three models were compared with the modifications of the gate system and overflows. Internal porosities which are occurred during the solidification process are predicted with the solidification analysis. And also the results of the modified gate system are compared.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.3
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• pp.196-208
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• 2007

An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.

• Transactions of the Korean Society of Automotive Engineers
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• v.23 no.4
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• pp.388-395
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• 2015

The waste gate valve (WGV) for gasoline vehicles operate in a harsh high-temperature environment. Hence, WGVs are typically made of Inconel 713C, which is a type of Ni-based superalloy. Recently, the metal injection molding (MIM) process has attracted considerable attention for parts used under high-temperature conditions. In this study, an MIM analysis for the head and other parts of the WGV is conducted using a commercial CAE program Moldflow. Further, optimal manufacturing conditions are determined by analyzing flow characteristics at various injection times and locations. Moreover, to improve the accuracy of the analysis results, we compare the actual temperature of the mold during injection processing with that observed through the analysis. As the results, metal injection patterns of analysis are well in accord with these of short shot test. And the temperature variations of analysis is also very similar with those of feedstock when metal injection molding.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.213-225
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• 2002

Metal-Ferroelectric- Insulator- Silicon (MFIS) structured field effect transistor (FET) device was fabricated and characterized. Important issues to realize ferroelectric gate field effect transistor device were summarized in three sections. The choice of interlayer dielectric was made in the consideration of device functionality and chemical reaction between ferroelectric materials and silicon surface during fabrication process. Also, various ferroelectric thin film materials were taken into account to meet desired memory window and process compatibility. Finally, MFIS structured FET device was fabricated and important characteristics were discussed. For feasible integration of current device as random access memory array cell address schemes were also suggested.

• Journal of Korean Society of Industrial and Systems Engineering
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• v.40 no.1
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• pp.35-40
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• 2017

A most important progress in civilization was the introduction of mass production. One of main methods for mass production is die-casting molds. Due to the high velocity of the liquid metal, aluminum die-casting is so complex where flow momentum is critical matter in the mold filling process. Actually in complex parts, it is almost impossible to calculate the exact mold filling performance with using experimental knowledge. To manufacture the lightweight automobile bodies, aluminum die-castings play a definitive role in the automotive part industry. Due to this condition in the design procedure, the simulation is becoming more important. Simulation can make a casting system optimal and also elevate the casting quality with less experiment. The most advantage of using simulation programs is the time and cost saving of the casting layout design. For a die casting mold, generally, the casting layout design should be considered based on the relation among injection system, casting condition, gate system, and cooling system. Also, the extent or the location of product defects was differentiated according to the various relations of the above conditions. In this research, in order to optimize the casting layout design of an automotive Oil Pan_BR2E, Computer Aided Engineering (CAE) simulation was performed with three layout designs by using the simulation software (AnyCasting). The simulation results were analyzed and compared carefully in order to apply them into the production die-casting mold. During the filling process with three models, internal porosities caused by air entrapments were predicted and also compared with the modification of the gate system and overflows. With the solidification analysis, internal porosities occurring during the solidification process were predicted and also compared with the modified gate system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.163-166
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• 2002

We investigated structural and electrical properties of Metal-Oxide-Semiconductor(MOS) structure using Hafnium $oxide(HfO_{2})$ as high-k gate dielectric material. $HfO_{2}$ films are ultrathin gate dielectric material witch have a thickness less than 2.0nm， so it is spotlighted to be substituted $SiO_{2}$ as gate dielectric material. In this paper We have grown $HfO_{2}$ films with pt electrode on P-type Silicon substrate by RF magnetron sputtering system using $HfO_{2}$ target and oserved the property of semiconductor-oxide interface. Using pt electrode, it is necessary to be annealed at ${300^{\circ}C}$. This process is to increase an adhesion ratio between $HfO_{2}$ films with pt electrode. In film deposition process, the deposition time of $HfO_{2}$ films is an important parameter. Structura1 properties are invetigated by AES depth profile, and electrical properties by Capacitance-Voltage characteristic. Interface trap density are measured to observe the interface between $HfO_{2}$ with Si using High-frequency(1MHz) C-V and Quasi - static C-V characteristic.