한국정보디스플레이학회:학술대회논문집
- 2000.01a
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- Pages.219-220
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- 2000
Formation of an Aluminum Parting Layer in the Fabrication of Field Emitter Arrays Using Reflow Method
- Kang, Seung-Youl (Micro-Electronics Lab., Electronics and Telecommunications Research Institute) ;
- Jung, Moon-Youn (Micro-Electronics Lab., Electronics and Telecommunications Research Institute) ;
- Cho, Young-Rae (Micro-Electronics Lab., Electronics and Telecommunications Research Institute) ;
- Song, Yoon-Ho (Micro-Electronics Lab., Electronics and Telecommunications Research Institute) ;
- Lee, Sang-Kyun (Micro-Electronics Lab., Electronics and Telecommunications Research Institute) ;
- Kim, Do-Hyung (Micro-Electronics Lab., Electronics and Telecommunications Research Institute) ;
- Lee, Jin-Ho (Micro-Electronics Lab., Electronics and Telecommunications Research Institute) ;
- Cho, Kyoung-Ik (Micro-Electronics Lab., Electronics and Telecommunications Research Institute)
- Published : 2000.01.13
Abstract
We propose a new method for the formation of an aluminum parting layer in the fabrication of field emitter arrays, in which we used a reflow property of aluminum at a lower temperature than the deformation point of glass. After the sputtered aluminum layer on the gate metal was etched for the formation of gate holes, we carried out a rapid thermal annealing process, by which the aluminum slightly diffused into the gate hole. This reflowed aluminum could be used as a parting layer and emitter arrays were easily fabricated using this method.
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