• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.427-427
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• 2016

Organic-inorganic hybrid perovskite have attracted significant attention as a new revolutionary light absorber for photovoltaic device due to its remarkable characteristics such as long charge diffusion lengths (100-1000nm), low recombination rate, and high extinction coefficient. Recently, power conversion efficiency of perovskite solar cell is above 20% that is approached to crystalline silicon solar cells. Planar heterojunction perovskite solar cells have simple device structure and can be fabricated low temperature process due to absence of mesoporous scaffold that should be annealed over 500 oC. However, in the planar structure, controlling perovskite film qualities such as crystallinity and coverage is important for high performances. Those controlling methods in one-step deposition have been reported such as adding additive, solvent-engineering, using anti-solvent, for pin-hole free perovskite layer to reduce shunting paths connecting between electron transport layer and hole transport layer. Here, we studied the effect of alkali metal halide to control the fabrication process of perovskite film. During the morphology determination step, alkali metal halides can affect film morphologies by intercalating with PbI2 layer and reducing $CH3NH3PbI3{\cdot}DMF$ intermediate phase resulting in needle shape morphology. As types of alkali metal ions, the diverse grain sizes of film were observed due to different crystallization rate depending on the size of alkali metal ions. The pin-hole free perovskite film was obtained with this method, and the resulting perovskite solar cells showed higher performance as > 10% of power conversion efficiency in large size perovskite solar cell as $5{\times}5cm$. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and inductively coupled plasma optical emission spectrometry (ICP-OES) are analyzed to prove the mechanism of perovskite film formation with alkali metal halides.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.7
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• pp.539-544
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• 2013

To study the encapsulation method for heat dissipation of high brightness organic light emitting diode (OLED), red emitting OLED of ITO (150 nm) / 2-TNATA (50 nm) / NPB (30 nm) / $Alq_3$ : 1 vol.% Rubrene (30 nm) / $Alq_3$ (30 nm) / LiF (0.7 nm) / Al (200 nm) structure was fabricated, which on $Alq_3$ (150 nm) / LiF (150 nm) as buffer layer and Al as protective layer was deposited to protect the damage of OLED, and subsequently it was encapsulated using attaching film and metal sheet. The current density, luminance and power efficiency was improved according to thickness of Al protective layer. The emission spectrum and the Commission International de L'Eclairage (CIE) coordinate did not have any effects on encapsulation process using attaching film and metal sheet The lifetime of encapsulated OLED using attaching film and metal sheet was 307 hours in 1,200 nm Al thickness, which was increased according to thickness of Al protective layer, and was improved 7% compared with 287 hours, lifetime of encapsulated OLED using attaching film and flat glass. As a result, it showed the improved current density, luminance, power efficiency and the long lifetime, because the encapsulation method using attaching film and metal sheet could radiate the heat on OLED effectively.

• Journal of Microbiology and Biotechnology
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• v.14 no.5
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• pp.1038-1042
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• 2004

The photoelectric responses of a biodevice consisting of chlorophyll $\alpha$ Langmuir-Blodgett film were investigated. Chlorophyll $\alpha$ Langmuir-Blodgett films were deposited onto ITO and Au coated glass. To confirm film formation, surface analysis of chlorophyll $\alpha$ Langmuir-Blodgett film was carried out by measurement using atomic force microscopy. The metal/insulator/metal structured biodevice was constructed by depositing aluminum onto the chlorophyll $\alpha$ Langmuir-Blodgett film surface. To investigate the photoelectric response, the current-voltage characteristic was measured by the conducting metal tip. The photoswitching function and transient photovoltage characteristics of the proposed device were measured by irradiation with Ar ion laser and $N_2$ pulse laser, respectively. This research suggested that the proposed biodevice consisting of chlorophyll $\alpha$ could be applied to the molecular scale biosensor and/or bioelectronic device.

• Laser Solutions
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• v.2 no.3
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• pp.52-61
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• 1999

The laser induced forward transfer(LIFT) technique employs a pulsed laser to transfer parts of a thin metal film from an optically transparent target onto an arbitrary substrate in close proximity to the metal film on the target. In this work, a two-step method, the combination of LIFT process, in which a Au film deposited on the $Al_2$O$_3$ substrate by Nd:YAG laser and subsequent Au electroless metal plating on the by LIFT process generated Au seed, was presented. The influence of laser parameters, wavelength, laser power, film thickness and overlap ratio of pulse tracks, on the shapes of deposit and conductor line after electroless plating is experimentally studied. As a results, the threshold power densities for ablation, deposition and metallization were determined and comparison of threshold value between the wave length 1064nm and the second harmonic generated 532nm. In odor to determine a possible application in the electronic industry, a smallest conduct spot size, line width and isolated line space were generated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.4
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• pp.422-425
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• 2004

In this study, the AZO thin films were prepared as a function of oxygen gas flow ratio at room temperature by FTS(Facing Targets Sputtering) apparatus using Zn:Al(metal)-Zn:Al(metal) or Zn(metal)-ZnO:Al(ceramic). The film thickness, crystalline and electric properties of AZO thin film was evaluated by $\alpha$-step, XRD and 4-point probe. In the results, the resistivity of AZO thin film was shown the lowest value about 8${\times}$10$^{-2}$ $\Omega$-cm(Zn:Al-Zn:Al), 3${\times}$10$^{-1}$ $\Omega$-cm(Zn-ZnO:Al) at the oxygen gas flow ratio 0.3. And the AZO thin film has good crystalline at oxygen gas flow ration 0.4, using Zn:Al-Zn:Al targets.

• Electrical & Electronic Materials
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• v.10 no.7
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• pp.713-718
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• 1997

Polyaniline free standing films cast from N-methyl-2-pyrrolidinone(NMP) solution, camphorsulfonic acid(HCSA), dodecylbenzensulfonic acid(HDBSA), inorganic matter(carbon black, graphite) and metal(silver) were prepared by processings. The properties of these films such as crystallinity, near-infrared absorption spectra and conductivity were investigated. The HCSA and HDBSA doped polyaniline films cast from m-cresol and chloroform solvents showed the metallic property and high crystallinity, respectively. The value of conductivity in the HCSA doped polyaniline film obtained 180 S/cm. We have obtained the value of conductivity 200 S/cm in the metal(silver) doped polyaniline film, which is higher than that of the HCSA doped polyaniline film. The metal(silver) doped polyaniline film shows good properties as a electromagnetic shielding material.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.434-434
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• 2011

Electrochemical method have been employed in this work to modify the chemical vapour deposited nitrogen doped hydrogen amorphous diamond-like carbon (N-DLC) film to fabricate nickel and copper nano particle modified N-DLC electrodes. The electrochemical behaviour of the metal nano particle modified N-DLC electrodes have been characterized at the presence of glucose in electrolyte. Meanwhile, the N-DLC film structure and the morphology of metal nano particles on the N-DLC surface have been investigated using micro-Raman spectroscopy, X-ray photoelectron spectroscopy and atomic force microscopy. The nickel nano particle modified N-DLC electrode exhibits a high catalytic activity and low background current, while the advantage of copper modified N-DLC electrode is drawn back by copper oxidizations at anodic potentials. The results show that metal nano particle modification of N-DLC surface could be a promising method for controlling the electrochemical properties of N-DLC electrodes.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.79.2-79.2
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• 2012

In this work, vertically aligned metal oxide nanorods(ZnO, $TiO_2$, $WO_3$) were grown onto CuO film at the room temperature. The fabricated nanorods of 90nm~500nm diameter range and $1{\mu}m{\sim}15{\mu}m$ of length range. Growth of metal oxide nanorods only depends on thickness of CuO film in this method, and it is grown at both of room temperature and high temperature. That means, it is much faster mathod to make the vertical metal oxide nanorods than old method such as hydrothermal method.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2021.05a
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• pp.67-68
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• 2021

Social infrastructure facilities can be destroyed instantly when exposed to EMP (ElectroMagnetic Pulse), causing social chaos. However, concrete structures with low electrical conductivity cannot expect EMP shielding effect. Therefore, in this study, a metal sprayed thin film showing excellent EMP shielding performance was applied to a concrete structure to evaluate the metal spray welding efficiency and adhesion performance of the thin film according to the concrete surface treatment method. As a result according to the concrete surface treatment method, It was confirmed that the use of a roughening agent that generates physical irregularities in order to improve the welding efficiency and adhesion performance increases the physical performance of the concrete and metal sprayed thin film.

• Journal of the Korean Vacuum Society
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• v.6 no.S1
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• pp.110-114
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• 1997

Development of metal ion source growth of high quality Cu metal film formation of non-stoichiometric $SnO_2$ films of Si(100), and modification fo polymer surface by low enregy ion beam have been carried out at KIST Ion Beam Lab. A new metal ion source with high ion beam flux has been developed by a hybrid ion beam (HIB) deposition and non-stoichiometric $SnO_2$ films are controlled by supplying energy. The ion assisted reaction (IAR) in which keV ion beam is irradiated in reactive gas environment has been deveolped for modifying the polymers and enhancing adhesion to other materials and advantages of the IAR have been reviewed.