• Transactions on Electrical and Electronic Materials
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• v.1 no.3
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• pp.14-17
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• 2000

Giga bit dynamic random access memory(DRAM) requires the capacitor of high dielectric films. Some metal oxides films have been proposed as the dielectric material . And Pt is one of the most promising electrode materials. However very little has been done in developing the etching technologoy Pt film. Therefore, it is the first priority to develop the technology for plasma etching of Pt film. In this study, the dry etching of Pt film was investigated in Inductively Coupled Plasma(ICP) etching system with Cl$_2$/Ar and HBr/Cl$_2$/Ar gas mixing. X-ray photoelectron spectroscopy (XPS) was used in analysis of sidewall residues for the understanding of etching mechanism. We found the etch residues on the pattern sidewall is mainly Pt-Pt, Pt-Cl and Pt-Br compounds, Etch profile was observed by Scanning Electron Spectroscopy(SEM) . The etch rate of Pt film at 10%, Cl$_2$/90% Ar gas mixing ration was higher than at 100%. Ar. Addition of HBr to Cl$_2$/Ar as an etching gas led to generally higher selectivity to SiO$_2$. And the etch residues were reduced at 5% HBr/5% Cl$_2$/90% Ar gas mixing ration. These pages provide you with an examples of the layout and style which we wish you to adopt during the preparation of your paper, Make the width of abstract to be 14cm.

• Journal of the Korean institute of surface engineering
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• v.53 no.5
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• pp.241-248
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• 2020

The change of the deposition behavior of diamond through a pretreatment process of the base metal prior to diamond deposition using HFCVD was investigated. To improve the specific surface area of the base material, sanding was performed using sandblasting first, and chemical etching treatment was performed to further improve the uniform specific surface area. Chemical etching was performed by immersing the base material in HCl solutions with various etching time. Thereafter, seeding was performed by immersing the sanded and etched base material in a diamond seeding solution. Diamond deposition according to all pretreatment conditions was performed under the same conditions. Methane was used as the carbon source and hydrogen was used as the reaction gas. The most optimal conditions were found by analyzing the improvement of the specific surface area and uniformity, and the optimal diamond seeding solution concentration and immersion time were also obtained for the diamond particle seeding method. As a result, the sandblasted base material was immersed in 20% HCl for 60 minutes at 100 ℃ and chemically etched, and then immersed in a diamond seeding solution of 5 g/L and seeded using ultrasonic waves for 30 minutes. It was possible to obtain optimized economical diamond film growth rates.

• Journal of Sensor Science and Technology
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• v.29 no.6
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• pp.407-411
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• 2020

In this study, we propose an array-type gas sensor with high selectivity and response using multiple oxide semiconductors. The sensor array was composed of SnO₂ and In₂O₃, and the detection characteristics were improved by using Pt, Au, and Pd catalysts. All samples were deposited directly on the Pt interdigitated electrode (IDE) through the e-beam evaporator glancing angle deposition (GAD) method. They grew in the form of well-aligned nanorods at off-axis angles. The prepared SnO₂ and In₂O₃ nanorod samples were exposed to CH₃COCH₃, C₇H₈, and NO₂ gases in a 300℃ dry condition. Au-decorated SnO₂, Au-decorated In₂O₃, and Pd-decorated In₂O₃ exhibited high selectivity for CH₃COCH₃, C₇H₈, and NO₂, respectively. They demonstrated a high detection limit of the sub ppb level computationally. In addition, measurements from each sensor were executed in the 40% relative humidity condition. Although there was a slight reduction in detection response, high selectivity and distinguishable detection characteristics were confirmed.

• Polymer(Korea)
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• v.24 no.3
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• pp.382-388
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• 2000

Polymer electrolyte films consisting of poly(vinylidenefluoride-hexafluoropropylene) (PVdF-HFP), LiClO$_3$ and a mixture of ethylene carbonate (EC) and ${\gamma}$-butyrolactone (GBL) were examined in order to obtain the best compromise between high ionic conductivity, homogeniety, dimensional and electrochemical stability. Measurements of ionic conductivity, differential scanning calorimetry and linear sweep voltammetry have been carried out for various compositions. The highest conductivity of 3.8$\times$10$^{-3}$ S$cm^{-1}$ / at 3$0^{\circ}C$ were obtained for a film of 30(PVdF-HFP)+7.8LiClO$_4$+62.2EC/GBL. From the DSC study, it has been found that the PVdF-HFP gels are stable up to 10$0^{\circ}C$, and the salt lowers the melting temperature of crystalline part of PVdF by interacting sensitively with polymer segments. When Lithium metal is in contact with the gel films, it tends to undergo corrosion and the reaction products accumulate resulting in the formation of a passive film on Li electrode. As the aging time progresses, the interfacial resistance increases continuously. Anodic stability is measured to extend up to about 4.5 V vs. Li.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.237.2-237.2
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• 2013

ReRAM cell, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of conductive filament in a solid electrolyte [1,2]. Especially, Chalcogenide-based ReRAM have become a promising candidate due to the simple structure, high density and low power operation than other types of ReRAM but the uniformity of switching parameter is undesirable. It is because diffusion of ions from anode to cathode in solid electrolyte layer is random [3]. That is to say, the formation of conductive filament is not go through the same paths in each switching cycle which is one of the major obstacles for performance improvement of ReRAM devices. Therefore, to control of nonuniform conductive filament formation is a key point to achieve a high performance ReRAM. In this paper, we demonstrated the enhanced repeatable bipolar resistive switching memory characteristics by spreading the Ag nanocrystals (Ag NCs) on amorphous GeSe layer compared to the conventional Ag/GeSe/Pt structure without Ag NCs. The Ag NCs and Ag top electrode act as a metal supply source of our devices. Excellent resistive switching memory characteristics were obtained and improvement of voltage distribution was achieved from the Al/Ag NCs/GeSe/Pt structure. At the same time, a stable DC endurance (>100 cycles) and an excellent data retention (>104 sec) properties was found from the Al/Ag NCs/GeSe/ Pt structured ReRAMs.

• Resources Recycling
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• v.20 no.2
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• pp.67-73
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• 2011

In this study, for recovery of renewable noble metal from used stack of fuel cell, synthesis of platinum nano particle is established through effect of platinum solution concentration, pH value, reducing agent and dispersing agent at a volume ratio of 1 mM $H_2PtCl_6$:10 mM $NaBH_4$:8 mM Cl4TABr = 1:0.4:0.4(vol.%), pH4, $50^{\circ}C$, 160 rpm and 10min. Less than 5 nm platinum particles were synthesized using Pt leaching solution from used MEA of stack under same condition of method using simulated Pt solution. The characteristics of synthesized nano particles was illustrated by XPS analysis as the reduction of platinum ions into platinum metals(zero-valent).

• Nano
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• v.13 no.12
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• pp.1850141.1-1850141.11
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• 2018

Sodium ion batteries based on the more sodium source reserve than that of lithium have been designed as promising alternatives to lithium ion batteries. However, several problems including unsatisfied specific capacity and serious cyclic stability must be solved before the reality. One of the effective approaches to solve the abovementioned problems is to search for suitable anode materials. In this work, we designed and prepared $FeSe_2$ nanoflakes via a simple hydrothermal method which can be adjusted in composition by Fe precursor. As a potential anode for sodium storage, the optimized $FeSe_2$ electrode was further evaluated in different electrolytes of $NaClO_4$ in propylene carbonate/fluoroethylene carbonate and $NaCF_3SO_3$ in diethylene glycol dimethyl ether. The capacity was about $470mAh\;g^{-1}$ and $535mAh\;g^{-1}$ at $0.5A\;g^{-1}$, respectively, in the voltage between 0.5 V and 2.9 V in the cycle of stabilization phase. Superior performance both in capacity and in stability was obtained in ether-based electrolyte, which affords the property without plugging the intermediates of transition metal dichalcogenides during charge/discharge processes.

• Korean Journal of Materials Research
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• v.29 no.11
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• pp.697-702
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• 2019

In this study, using a wet chemical process, we evaluate the effectiveness of different solution concentrations in removing layers from a solar cell, which is necessary for recovery of high-purity silicon. A 4-step wet etching process is applied to a 6-inch back surface field(BSF) solar cell. The metal electrode is removed in the first and second steps of the process, and the anti-reflection coating(ARC) is removed in the third step. In the fourth step, high purity silicon is recovered by simultaneously removing the emitter and the BSF layer from the solar cell. It is confirmed by inductively coupled plasma mass spectroscopy(ICP-MS) and secondary ion mass spectroscopy(SIMS) analyses that the effectiveness of layer removal increases with increasing chemical concentrations. The purity of silicon recovered through the process, using the optimal concentration for each process, is analyzed using inductively coupled plasma atomic emission spectroscopy(ICP-AES). In addition, the silicon wafer is recovered through optimum etching conditions for silicon recovery, and the solar cell is remanufactured using this recovered silicon wafer. The efficiency of the remanufactured solar cell is very similar to that of a commercial wafer-based solar cell, and sufficient for use in the PV industry.

• Korean Journal of Metals and Materials
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• v.49 no.10
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• pp.811-817
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• 2011

In this study, we have investigated the role of a metal oxide hole injection layer (HIL) between an Indium Tin Oxide (ITO) electrode and an organic hole transporting layer (HTL) in organic light emitting diodes (OLEDs). Nickel Oxide films were deposited at different deposition times of 0 to 60 seconds, thus leading to a thickness from 0 to 15 nm on ITO/glass substrates. To study the influence of NiO film thickness on the properties of OLEDs, the relationships between NiO/ITO morphology and surface properties have been studied by UV-visible spectroscopy measurements and AFM microscopy. The dependences of the I-V-L properties on the thickness of the NiO layers were examined. Comparing these with devices without an NiO buffer layer, turn-on voltage and luminance have been obviously improved by using the NiO buffer layer with a thickness smaller than 10 nm in OLEDs. Moreover, the efficiency of the device ITO/NiO (< 5 nm)/NPB/$Alq_3$/ LiF/Al has increased two times at the same operation voltage (8V). Insertion of a thin NiO layer between the ITO and HTL enhances the hole injection, which can increase the device efficiency and decrease the turn-on voltage, while also decreasing the interface roughness.

• KEPCO Journal on Electric Power and Energy
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• v.7 no.1
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• pp.161-165
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• 2021

In general, SOFCs mainly use Ni-YSZ cermet, a mixture of Ni and YSZ, as an anode material, which is stable in a high-temperature reducing atmosphere. However, when SOFCs have operated at a high temperature for a long time, the structural change of Ni occurs and it results in the problem of reducing durability and efficiency. Accordingly, a development of a new anode material that can replace existing nickel and exhibits similar performance is in progress. In this study, SrTiO₃, which is a perovskite-based mixed conductor and one of the candidate materials, was used. In order to increase the electrical conduction properties, Y_0.08Sr_0.92Fe_0.3Ti_0.7O₃, doped with 0.08 mol of Y³⁺ in Sr-site and 0.03 mol of transition metal Fe³⁺ in Ti-site, was synthesized and its chemical diffusion coefficient and reaction constant were measured. Its electrical conductivity changes were also observed while changing the oxygen partial pressure at a constant temperature. The performance as a candidate electrode material was verified by predicting the defect area through the electrical conductivity pattern according to the oxygen partial pressure.