• International Journal of Korean Welding Society
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• 제1권2호
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• pp.7-11
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• 2001

Almost every die for automobiles must be corrected or remodeled for minor geometrical changes or fur better hardness characteristics by an arc welding process. Although many other kinds of arc welding processes have been automated with robots, the molten metal deposition process for die remodeling still depends entirely on experienced welders. In this study, a database for bead shapes with respect to welding parameters is constructed through experiments to automate molten metal deposition by the arc welding process. Changes in the welding parameters for inclined base metal are studied to consider the effect of die geometries on the welding process.

• 마이크로전자및패키징학회지
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• 제27권4호
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• pp.77-81
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• 2020

Resistive RAM (ReRAM)은 전이금속 산화물의 저항변화 특성을 이용하는 차세대 비휘발 메모리로 전이금속산화물 내의 산소공공의 재분포를 통한 저항변화 특성을 이용한다. 따라서 저항변화 특성을 위해 전이금속산화물 내에는 일정량 이상의 산소공공이 요구되며 이를 위해서는 박막 형성 공정에서 산화 수를 조절할 수 있는 공정이 필요하다. 본 연구에서는 직접패턴이 가능한 photochemical metal organic deposition (PMOD) 공정을 사용하여 UV 노출에 의해 photochemical metal organic precursor의 ligand가 분해되는 과정에서 전기장을 인가하여 박막내의 산화 수를 조절하는 실험을 진행하였다. Electric field assisted PMOD (EFAPMOD) 법을 이용하여 FeOx 박막의 산화 수 조절이 가능함을 x-ray photoelectron spectroscopy (XPS) 분석과 I-V 측정을 통하여 확인하였으며, EFAPMOD 공정 중 인가하는 전압의 크기를 조절하여 박막의 산화 수를 조절할 수 있음을 확인하였다. 따라서 EFAPMOD 공정 중 인가전압의 크기를 이용하여 저항변화 특성에 적합한 적정한 산화수를 가지는 금속산화물 박막을 얻고 그 저항변화 특성을 조정할 수 있음을 확인하였다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.5-18
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• 1996

The solid state cesium ion source os alumino-silicate based zeolite which contains cerium. The material is an ionic conductor. Cesiums are stably stored in the material and one can extract the cesiums by applying electric field across the electrolyte. Cesium ion bombardment has the unique property of producing high negative ion yield. This ion source is used as the primary source for the production of a negative ion without any gas discharge or the need for a carrier gas. The deposition of materials as an ionic species in the energy range of 1.0 to 300eV is recently recognized as a very promising new thin film technique. This energetic non-thermal equilibrium deposition process produces films by “Kinetic Bonding / Energetic Condensation" mechansim not governed by the common place thermo-mechanical reaction. Under these highly non-equilibrium conditions meta-stable materials are realized and the negative ion is considered to be an optimum paeticle or tool for the purpose. This process differs fundamentally from the conventional ion beam assisted deposition (IBAD) technique such that the ion beam energy transfer to the deposition process is directly coupled the process. Since cesium ion beam sputter deposition process is forming materials with high kinetic energy of metal ion beams, the process provider following unique advantages:(1) to synthesize non thermal-equilibrium materials, (2) to form materials at lower processing temperature than used for conventional chemical of physical vapor deposition, (3) to deposit very uniform, dense, and good adhesive films (4) to make higher doposition rate, (5) to control the ion flux and ion energy independently. Solid state cesium ion beam sputter deposition system has been developed. This source is capable of producing variety of metal ion beams such as C, Si, W, Ta, Mo, Al, Au, Ag, Cr etc. Using this deposition system, several researches have been performed. (1) To produce superior quality amorphous diamond films (2) to produce carbon nitirde hard coatings(Carbon nitride is a new material whose hardness is comparable to the diamond and also has a very high thermal stability.) (3) to produce cesiated amorphous diamond thin film coated Si surface exhibiting negative electron affinity characteristics. In this presentation, the principles of solid state cesium ion beam sputter deposition and several applications of negative metal ion source will be introduced.

• 소성∙가공
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• 제27권5호
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• pp.314-322
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• 2018

AlSi12 is a heat-resistant aluminum alloy that is lightweight, corrosion-resistant, machinable and attracting attention as a functional material in aerospace and automotive industries. For that reason, AlSi12 powder has been used for high performance parts through 3D printing technology. The purpose of this study is to observe deposition characteristics of AlSi12 powder in a direct energy deposition (DED) process (one of the metal 3D printing technologies). In this study, deposition characteristics were investigated according to various process parameters such as laser power, powder feed rate, scan speed, and slicing layer thickness. In the single track deposition experiment, an irregular bead shape and balling or humping of molten metal were formed below a laser power of 1,000 W, and the good-shaped bead was obtained at 1.0 g/min powder feed rate. Similar results were observed in multi-layer deposition. Observation of deposited height after multi-layer deposition revealed that over-deposition occurred at all conditions. To prevent over-deposition, slicing layer thickness was experimentally determined at given conditions. From these results, this study presented practical conditions for good surface quality and accurate geometry of deposits.

• 분석과학
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• 제33권3호
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• pp.159-166
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• 2020

진공금속증착법(vacuum metal deposition, 이하 VMD)는 비다공성과 반다공성 표면의 잠재지문을 현출하는데 효과적이다. VMD는 일반적인 기법으로 현출할 수 없거나 어려운 표면에 유류된 지문을 현출하는 경우에서 활용할 수 있다. VMD 기법이 권장되는 표면은 비닐, 폴리머 지폐, 마그네틱 코팅 처리가 된 티켓 등이 있다. 본 연구에서는 택배 봉투로 주로 사용되는 분홍색 고밀도 폴리에틸렌 봉투(HDPE)와 저밀도 폴리에틸렌 봉투(LDPE)에 지문을 유류한 뒤 최소 12시간부터 최대 28일이 경과한 지문을 현출하기 위한 금의 최소 투입량을 탐색하였다. 그리고 그 결과를 흑색분말, 형광분말의 효과와 비교하였다. 또한, 실제로 배송에 사용된 택배 봉투를 수거한 다음 HDPE와 LDPE로 분류하고 pseudo-operation test를 시행하였다. 그 결과, VMD는 HDPE와 LDPE 표면에서 비교적 일관된 지문 현출 결과를 보여주었다.

• Journal of Welding and Joining
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• 제35권3호
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• pp.28-34
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• 2017

The authors derived the criteria on the process parameters of laser depositions with metal powers(SUS316L & IN718) by evaluating the surface and cross-section properties of the deposition layers. The surface characteristics of the deposition layer are investigated through optical microscopy by controlling the process parameters of laser output, powder feeding rate and gas feeding rate. The cross-section characteristics were also analyzed after polishing and chemical etching process. As the gas feeding rate increased, the amount of powder loss increased and the difference in the dilution ratio and heat affected zone depending on laser outputs was observed. In addition, the powder feeding rate used in the experiment did not interfere with the energy absorption of the base material.

• 한국초전도ㆍ저온공학회논문지
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• 제14권4호
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• pp.5-11
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• 2012

In this review article, we focus on various co-evaporation technologies developed for the fabrication of high performance $REBa_2Cu_3O_{7-{\delta}}$ (RE: Y and Rare earth elements, REBCO) superconducting films. Compared with other manufacturing technologies for REBCO films such as sputtering, pulsed laser deposition (PLD), metal-organic deposition (MOD), and metal organic chemical vapor deposition (MOCVD), the co-evaporation method has a strong advantage of higher deposition rate because metal sources can be used as precursor materials. After the first attempt to produce REBCO films by the co-evaporation method in 1987, various co-evaporation technologies for high performance REBCO films have been developed during last several decades. The key points of each co-evaporation technology are reviewed in this article, which enables us to have a good insight into a new high throughput process, called as a Reactive Co-Evaporation by Deposition and Reaction (RCE-DR).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.319.1-319.1
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• 2013

Solid oxide fuel cells (SOFCs) have been recognized as one of emerging renewable energy sources, due to minimized pollutant production and high efficiency in operation. The performance of SOFCs is largely dependent on the electrode polarization which involves the oxidation/reduction in cathodes and anodes along with the charge transport of ions and electronic carriers. Atomic layer deposition is based on the alternate chemical surface reaction occurring at low temperatures with high uniformity and superior step coverage. Such features can be extended into the coating of metal oxide and/or metal layer onto the porous materials. In particular, the atomic layer deposition is can manipulated in controlling the charge transport in terms of triple phase boundaries, in order to control artificially the electrochemical polarization in electrodes of SOFC. The current work applied atomic layer deposition of metal oxides intro the electrodes of SOFCs. The corresponding effect was monitored in terms of the electrochemical characterization. The roles of atomic layer deposition in solid oxide fuel cells are discussed towards optimized towards long-term durability at intermediate temperature.

• 한국초전도ㆍ저온공학회논문지
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• 제10권2호
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• pp.12-15
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• 2008

Nano-sized dots have been formed on the buffered metal substrates using the novel approach of the electro-spray deposition, to modulate the substrate surface and induce the columnar defects in REBCO films grown on it. The $BaZrO_3$ precursor solution was synthesized and electro-sprayed out onto the negatively charged substrate surface. Using the electrostatic force, nano-sized dots can be grown and uniformly distributed on the buffered metal substrate. The height of BZO nanodots was observed above the 200nm, which are beneficial to induce the columnar defects onto the BZO as a seed. The density of BZO nanodots was also investigated and ${\sim}7.8/{\mu}m^2$ was obtained. As the deposition distance of electro-spray was shortened there was ${\sim}8times$ increase of density of nanodots. The optimization of process variables in electro-spray deposition are discussed in respect to the superconducting REBCO films processed by the Metal-Organic Deposition with the effective flux pinning properties.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 추계학술대회 논문집
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• pp.153-156
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• 2003

The multi-layer oxide buffer layer for the coated conductor was deposited on biaxially textured Ni substrates using pulsed laser deposition. Oxygen partial pressure, 4％$H_2$/Ar partial pressure, and deposition temperature were deposition variables investigated to find the optimum deposition conditions. $Y_2$O$_3$seed layer was deposited epitaxially on metal substrate. The full buffer architecture of $Y_2$O$_3$/YSZ/CeO$_2$was successfully prepared on metal substrate.