• 제목/요약/키워드: metal deposition

검색결과 1,618건 처리시간 0.027초

Al 박막의 underlayer로서의 Ionized Physical Vapor Deposition (I-PVD) Ti 또는 I-PVD Ti/Metal-Organic Chemical Vapor Deposition TiN (Ti Prepared by ionized physical vapor deposition (I-PVD) and TiN prepared by metal-organic chemical vapor deposition(MOCVD) as underlayers of aluminum TiN)

  • 이원준;나사균
    • 한국진공학회지
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    • 제9권4호
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    • pp.394-399
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    • 2000
  • Underlayer의 종류 및 두께가 Al 박막의 texture 및 면저항 변화에 미치는 영향을 연구하였다. Al의 underlayer로는 ionized physical vapor deposition(I-PVD)에 의해 제조된 Ti와 I-PVD Ti 위에 metalorganic chemical vapor deposition(MOCVD)에 의해 제조된 TiN을 적층한 구조가 사용되었으며, 각각에 대해 두께를 변화시키면서 Al 박막의 배향성, 면저항을 조사하고, $400^{\circ}C$, $N_2$분리기에서 열처리하면서 면저항의 변화를 조사하였다. I-PVD Ti만을 Al의 underlayer로 사용한 경우, Ti두께가 5 nm이어도 Al 박막이 우수한 <111> 배향성을 나타내었으나, Al-Ti반응 때문에 열처리 후 Al 배선의 면저항이 크게 상승하였다. I-PVD 와 Al 사이에 MOCVD TiN을 적용함에 의해 Al <111> 배향성의 큰 저하없이 Al-Ti 반응에 의한 면저항의 증가를 억제할 수 있었으며, MOCVD TiN의 두께가 4 nm 이하일 때 특히 우수한 Al <111> 배향성을 나타내었다.

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Nucleation, Growth and Properties of $sp^3$ Carbon Films Prepared by Direct $C^-$ Ion Beam Deposition

  • Kim, Seong I.
    • The Korean Journal of Ceramics
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    • 제3권3호
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    • pp.173-176
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    • 1997
  • Direct metal ion beam deposition is considered to be a whole new thin film deposition technique. Unlike other conventional thin film deposition processes, the individual deposition particles carry its own ion beam energies which are directly coupled for the formation of this films. Due to the nature of ion beams, the energies can be controlled precisely and eventually can be tuned for optimizing the process. SKION's negative C- ion beam source is used to investigate the initial nucleation mechanism and growth. Strong C- ion beam energy dependence has been observed. Complete phase control of sp3 and sp3, control of the C/SiC/Si interface layer, control of crystalline and amorphous mode growth, and optimization of the physical properties for corresponding applications can be achieved.

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이온선 스퍼터 증착법에 의하여 제조된 CrOx의 전기적 특성 (The Electrical Characteristics of Chromium Oxide Film Produced by Son Beam Sputter Deposition)

  • 조남제;이규용
    • 한국전기전자재료학회논문지
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    • 제15권6호
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    • pp.518-523
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    • 2002
  • The influences of ion beam energy and reactive oxygen partial pressure on the physical and crystallographic characteristics of transition metal oxide compound(CrOx) film were studied in this paper. Chromium oxide films were deposited onto a cover-glass using ion Beam Sputter Deposition(IBSD) technique according to the various processing parameters. Crystallinity and grain size of as-deposited films were analyzed using XRD analysis. Thickness and Resistivity of the films were measured by $\alpha$-step and 4-point probe measurement. According to the XRD, XPS and resistivity results, the deposited films were the cermet type films which had crystal structure including amorphous oxide(a-oxide) phase and metal Cr phase simultaneously. The increment of the ion beam energy during the deposition process led to decreasing of metal Cr grain size and the rapid change of resistivity above the critical $O_2$ partial pressure.

고용착 GMA 용접의 Arc 안정성 및 용적이행 현상에 미치는 보호gas의 영향 (Effect of Shielding gas Composition on Arc Stability and Transfer mode of High deposition GMA Welding)

  • 경규담;천홍정;이정헌;강봉용;김희진
    • Journal of Welding and Joining
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    • 제15권1호
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    • pp.109-115
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    • 1997
  • The arc stability and the metal transfer mode of high deposition GMA welding were investigated using various compositions of shielding gas with two types of filler, ie solid wire and metal cored wire. As for a solid wire, the transfer mode changed from axial spray to rotational spray with increasing wire feed rate (welding current) and the transition current was different with the gas composition. The gas composition also affected the apparent stability of rotating arc. As for a metal cored wire, on the other hand, no transition occurred and thus spray transfer mode could be applied with the welding current over 500A (deposition rate over 300g/min). Looking for the development of high deposition GMA welding process, above results were discussed in two different ways, one is to elevate the transition current, the other is to stabilize the rotational transfer mode.

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수직보조전계 인가방식에 의한 전기영동 전착막의 제작 (Fabrication of EPD Films by Applying a.c Field Assisted Method)

  • 전용우;박성범;소대화
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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    • pp.107-110
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    • 2002
  • The electrophoretic deposition (EPD) technique have been applied to fabricating superconducting films and wires in former researches of our Lab. However, the particles of EPD films were usually deposited random1y on the metal substrate, the vertically combined a.c and d.c fields were applied to the EPD electrodes for orienting and densifying the particles of high $T_{c}$ superconducting deposition film on the substrate metal. Therefore, the surface states of EPD films by this combined fields could be oriented and affect to the electric properties increasing of superconducting films. The proposed method modified by a.c. assisted field to the conventional electrophoresis system was suitable to obtain improved properties with particle oriented deposition and densification.

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Development of High Flux Metal Ion Plasma Source for the Ion Implantation and Deposition

  • Kim, Do-Yun;Lee, Eui-Wan
    • Journal of Korean Vacuum Science & Technology
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    • 제7권2호
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    • pp.45-56
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    • 2003
  • A high flux metal plasma pulse ion source, which can simultaneously perform ion implantation and deposition, was developed and tested to evaluate its performance using the prototype. Flux of ion source was measured to be 5 A and bi-polar pulse power supply with a peak voltage of 250 V, repetition of 20 Hz and width of 100 ${\mu}\textrm{s}$ has an output current of 2 kA and average power of 2 kW. Trigger power supply is a high voltage pulse generator producing a peak voltage of 12 kV, peak current of 50 A and repetition rate of 20 Hz. The acceleration column for providing target energy up to ion implantation is carefully designed and compatible with UHV (ultra high vacuum) application. Prototype systems including various ion sources are fabricated for the performance test in the vacuum and evaluated to be more competitive than the existing equipments through repeated deposition experiments.

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Cu, Zn, Sn의 스퍼터링 적층방법과 황화 열처리공정이 Cu2ZnSnS4 태양전지재료 특성에 미치는 효과 (Effects of Sputter Deposition Sequence and Sulfurization Process of Cu, Zn, Sn on Properties of Cu2ZnSnS4 Solar Cell Material)

  • 박남규;비나야쿠마;김의태
    • 한국재료학회지
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    • 제23권6호
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    • pp.304-308
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    • 2013
  • The effect of a sputter deposition sequence of Cu, Zn, and Sn metal layers on the properties of $Cu_2ZnSnS_4$ (CZTS) was systematically studied for solar cell applications. The set of Cu/Sn/Zn/Cu multi metal films was deposited on a Mo/$SiO_2$/Si wafer using dc sputtering. CZTS films were prepared through a sulfurization process of the Cu/Sn/Zn/Cu metal layers at $500^{\circ}C$ in a $H_2S$ gas environment. $H_2S$ (0.1%) gas of 200 standard cubic centimeters per minute was supplied in the cold-wall sulfurization reactor. The metal film prepared by one-cycle deposition of Cu(360 nm)/Sn(400 nm)/Zn(400 nm)/Cu(440 nm) had a relatively rough surface due to a well-developed columnar structure growth. A dense and smooth metal surface was achieved for two- or three-cycle deposition of Cu/Sn/Zn/Cu, in which each metal layer thickness was decreased to 200 nm. Moreover, the three-cycle deposition sample showed the best CZTS kesterite structures after 5 hr sulfurization treatment. The two- and three-cycle Cu/Sn/Zn/Cu samples showed high-efficient photoluminescence (PL) spectra after a 3 hr sulfurization treatment, wheres the one-cycle sample yielded poor PL efficiency. The PL spectra of the three-cycle sample showed a broad peak in the range of 700-1000 nm, peaked at 870 nm (1.425 eV). This result is in good agreement with the reported bandgap energy of CZTS.

Study on Graphene Thin Films Grown on Single Crystal Sapphire Substrates Without a Catalytic Metal Using Pulsed Laser Deposition

  • Na, Byoung Jin;Kim, Tae Hwa;Lee, Cheon;Lee, Seok-Hyun
    • Transactions on Electrical and Electronic Materials
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    • 제16권2호
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    • pp.70-73
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    • 2015
  • Many studies have used chemical vapor deposition (CVD) to grow graphene. However, CVD is inefficient in terms of production costs, and inefficient for mass production because a transfer process using a catalytic metal is needed. In this study, graphene thin films were grown on single crystal sapphire substrates without a catalytic metal, using pulsed laser deposition (PLD) to resolve these problems. In addition, the growth of graphene using PLD was confirmed to have a close relationship with the substrate temperature.

금속 나노와이어의 제조와 특성 (Metal nano-wire fabrication and properties)

  • 보보무로드 함라쿠로프;김인수
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2009년도 춘계학술대회 논문집
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    • pp.432-434
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    • 2009
  • Metal nano-wire arrays on Cu-coated seed layers were fabricated by aqueous solution method using sulfate bath at room temperature. The seed layers were coated on Anodic aluminum oxide (AAO) bottom substrates by electrochemical deposition technique, length and diameter of metal nano-wires were dominated by controlling the deposition parameters, such as deposition potential and time, electrolyte temperature. Anodic aluminum oxide (AAO) was used as a template to prepare highly ordered Ni, Fe, Co and Cu multilayer magnetic nano-wire arrays. This template was fabricated with two-step anodizing method, using dissimilar solutions for Al anodizing. The pore of anodic aluminum oxide templates were perfectly hexagonal arranged pore domains. The ordered Ni, Fe, Co and Cu systems nano-wire arrays were characterized by Field Emission Scanning Electron Microscopy (FE-SEM) and Vibrating Sample Magnetometer (VSM). The ordered Ni, Fe, Co and Cu systems nano-wires had different preferred orientation. In addition, these nano-wires showed different magnetization properties under the electrodepositing conditions.

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금형수정 GMA 용접에 있어서 용접조건과 비드 형상과의 상관관계에 관한 연구 (A Study on the Relation between Bead Shape and Welding Parameters of GMA Welding far Die Remodeling)

  • 김지태;나석주;김덕환;서만석
    • Journal of Welding and Joining
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    • 제20권3호
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    • pp.60-66
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    • 2002
  • Almost every die fur automobiles must be corrected or remodeled for minor geometrical changes or for better hardness characteristics by arc welding process. Although many other kinds of arc welding processes have been automated with robots, this molten metal deposition process for die remodeling still depend entirely on experienced welders. In this study, the database for bead shapes with respect to welding parameters are constructed by experiments to automate the molten metal deposition by arc welding process. And the changes of welding parameters for inclined base metal are studied to consider the effect of die geometries fur the welding process.