• Journal of the Korean Chemical Society
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• v.45 no.6
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• pp.507-512
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• 2001

The hydrothermal reaction between lanthanum(Ⅲ) nitrate $(La(NO3)3${\cdot}$6H_2O)$ and benzene-1,3-dicarboxylic acid $(H_2BDC)$ in the presence of 1,2-bis(4-pyridyl)ethane gave a 2-D lanthnum-BDC coordination polymer with an empirical formula of $〔La_4$(BDC)_6(H_2O)_5$〕(H_2O)$ (1). X-ray structure analysis of compound 1 revealed that this polymer contains four distinct La metals. The three La metals are 7-coordinate with three different structures: a capped trigonal prism, a capped octahedron, and a pentagonal bipyramid. The remaining La metal has a 8-coordinate, square antiprismatic structure.

• Korean Journal of Materials Research
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• v.20 no.11
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• pp.623-627
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• 2010

Semiconducting metal oxides have been frequently used as gas sensing materials. While zinc oxide is a popular material for such applications, structures such as nanowires, nanorods and nanotubes, due to their large surface area, are natural candidates for use as gas sensors of higher sensitivity. The compound ZnO has been studied, due to its chemical and thermal stability, for use as an n-type semiconducting gas sensor. ZnO has a large exciton binding energy and a large bandgap energy at room temperature. Also, ZnO is sensitive to toxic and combustible gases. The NO gas properties of zinc oxide-single wall carbon nanotube (ZnO-SWCNT) composites were investigated. Fabrication includes the deposition of porous SWCNTs on thermally oxidized $SiO_2$ substrates followed by sputter deposition of Zn and thermal oxidation at $400^{\circ}C$ in oxygen. The Zn films were controlled to 50 nm thicknesses. The effects of microstructure and gas sensing properties were studied for process optimization through comparison of ZnO-SWCNT composites with ZnO film. The basic sensor response behavior to 10 ppm NO gas were checked at different operation temperatures in the range of $150-300^{\circ}C$. The highest sensor responses were observed at $300^{\circ}C$ in ZnO film and $250^{\circ}C$ in ZnO-SWCNT composites. The ZnO-SWCNT composite sensor showed a sensor response (~1300%) five times higher than that of pure ZnO thin film sensors at an operation temperature of $250^{\circ}C$.

• Journal of Environmental Science International
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• v.20 no.7
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• pp.845-855
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• 2011

The aim of this paper is to correlate the release characteristics of marine and lake sediment with their vicinal oxic conditions. We performed lab-scale simulation experiments using field sediment and water in order to compare the release concentrations and the release rates one another. To provide a few different kinds of oxic environments we used natural air flow and some oxygen releasing compounds such as $CaO_2$ and $MgO_2$. In case of phosphates, in each oxic condition, removal of phosphorus via biological activity and that via salt precipitation with the metal ions lowered the release rates. The behavior of the nitrogen-origin salts seemed to greatly depend on the typical biological actions - growth of biomass, nitrification, and partial denitrification. Generally speaking, the control of releases of $NH_3$-N, $PO_4$-P, T-N and T-P was successful under the oxic conditions meanwhile COD, nitrates and nitrites were difficult to reduce the releases into the bulk water because of the considerable microbial oxidation. Based on typical diffusive mass transfer kinetics the changes of concentrations of the nutrients were computed for qualitative and quantitative comparisons.

• Korean Journal of Materials Research
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• v.17 no.6
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• pp.293-297
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• 2007

Microstructure and tensile strength of the vacuum brazed stainless steel(STS303) and Cu were investigated. For brazing, the BNi-2, 3, 4, 6 and 7 (A.W.S standard) were used as filler metals. The Oxides such as $Cr_2O_3$ and $SiO_2$ were observed at brazed layers between STS303 and Cu matrix. Also, the intermetallic compounds of Cr-B and Ni-P were observed at brazed layers. Brazed STS303-Cu specimens with BNi-2, 3, 4 filler metals showed almost elastic deformation followed by plastic yielding and strain hardening up to a peak stress. On the other hand, it is likely that the fracture of the brazed specimens with BNi-6 and 7 was occurred in elastic range without plastic yielding up to a peak stress. Among these filler metals, the BNi-2 brazed at $1050^{\circ}C$ showed excellent wettability and the highest tensile strength (101.6MPa).

• Journal of Welding and Joining
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• v.27 no.3
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• pp.73-79
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• 2009

This present paper investigated the mechanical properties and the microstructures of each penetration shapes classifying the conduction shape area and the keyhole shape area about electron beam welded 120(T)mm thick plated aluminum 5052 112H. As a result the penetration depth is increased linearly according to the output power, but the aspect ratio is decreased after the regular output power. In the conduction shape area, the Heat affected zone is observed relatively wider than the keyhole shape area. In the material front surface of the welded specimen, the width is decreased but the width in the material rear surface is increased. After the measuring the Micro Vikers Hardness, it showed almost similar hardness range in all parts, and after testing the tensile strength, the ultimate tensile strength is similar to the ultimate tensile strength of the base material in all the specimens, also the fracture point was generated in the base materials of all the samples. In the result of the impact test, impact absorbed energy of the Keyhole shape area is turned up very high, and also shown up the effect about four times of fracture toughness comparing the base material. In the last result of observing the fractographs, typical ductile fraction is shown in each weld metal, and in the basic material, the dimple fraction is shown. The weld metals are shown that there are no other developments of any new chemical compound during the fastness melting and solidification.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.4
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• pp.27-36
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• 2007

In this study, we investigated the interfacial reactions between various Sn-Ag-Cu(SAC) solder alloys and ENIG(Electroless Ni Immersion Gold) and Cu-OSP(Organic Solderability Preservative) pad finish. In the case of the interfacial reaction between Sb added SAC solder and ENlf thinner P-rich Ni layer was formed at the interface. In the case of the interfacial reaction between Ni added SAC solder and Cu-OSP, the uniform $Cu_6Sn_5$, intermetallic compounds(IMCs) were formed and $Cu_6Sn_5$ grain did not grow after multiple reflows. Thinner $Cu_3Sn$ IMCs were farmed at the interface between $Cu_6Sn_5$ and Cu-OSP after $150^{\circ}C$ thermal aging.

• Journal of the Korea Institute of Military Science and Technology
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• v.1 no.1
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• pp.227-237
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• 1998

HgCdTe Is the most versatile material for the developing infrared devices. Not like III-V compound semiconductors or silicon-based photo-detecting materials, HgCdTe has unique characteristics such as adjustable bandgap, very high electron mobility, and large difference between electron and hole mobilities. Many research groups have been interested in this material since early 70's, but mainly due to its thermodynamic difficulties for preparing materials, no single growth technique is appreciated as a standard growth technique in this research field. Solid state recrystallization(SSR), travelling heater method(THM), and Bridgman growth are major techniques used to grow bulk HgCdTe material. Materials with high quality and purity can be grown using these bulk growth techniques, however, due to the large separation between solidus and liquidus line on the phase diagram, it is very difficult to grow large materials with minimun defects. Various epitaxial growth techniques were adopted to get large area HgCdTe and among them liquid phase epitaxy(LPE), metal organic chemical vapor deposition(MOCVD), and molecular beam epitaxy(MBE) are most frequently used techniques. There are also various types of photo-detectors utilizing HgCdTe materials, and photovoltaic and photoconductive devices are most interested types of detectors up to these days. For the larger may detectors, photovoltaic devices have some advantages over power-requiring photoconductive devices. In this paper we reported the main results on the HgCdTe growing and characterization including LPE and MOCVD, device fabrication and its characteristics such as single element and linear array($8{\times}1$ PC, $128{\times}1$ PV and 4120{\times}1$ PC). Also we included the results of the dewar manufacturing, assembling, and optical and environmental test of the detectors.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.3
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• pp.318-326
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• 1996

This study is to investigate a chemical vapor deposition technique of copper film which is expected to be more useful as metallizations of microcircuit fabrication. An experimental equipment was designed and set-up for this study, and a Cu-precursor used that is a metal-organic compound, named (hfac)Cu(I)VTMS ; (hevaflouoroacetylacetonate trimethyvinylsilane copper). Base pressure of the experimental system is in $10^{-6}$ Torr, and the chamber pressure and the substrate temperature can be controlled in the system. Before the deposition of copper thin film, tungsten or titanium nitride film was deposited onto the silicon wafer. Helium has been used as carrier gas to control the deposition rate. As a result, deposition rate was measured as $1,800\;{\AA}/min$ at $220^{\circ}C$ which is higher than the results of previous studies, and the average surface roughness was measured as about $200\;{\AA}$. A deposition selectivity was observed between W or TiN and $SiO_{2}$ substrates below $250^{\circ}C$, and optimum results are observed at $180^{\circ}C$ of substrate temperature and 0.8 Torr of chamber pressure.

• Korean Chemical Engineering Research
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• v.43 no.5
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• pp.566-570
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• 2005

The study on the hydrogenation and isomerization of unsaturated bicyclic hydrcarbon compounds using methylcyclopentadiene dimer (MCPD) was carried out. Exo compound was prepared through isomerization reaction after two hydrogenation reaction steps. In the first hydrogenation reaction which needs one mole of hydrogen, the formation rate of monomer was increased as dimer was decomposed at reaction temperature above $100^{\circ}C$. At first hydrogenation, DHDMCPD [dihydrodi(methylcyclopentadiene)] was formed and second hydrogenation was proceeded to produce THDMCPD [tetrahydrodi(methylcyclopentadiene)], the ratio of exo to endo THDMCPD was varied by the control of 2nd hydrogenation temperature. To improve the process, continuous 1st and 2nd hydrogenation conditions were established by using the 2nd stage heat controllable reactor. Also, catalytic activities were compared by the use of halogenized aluminum, metal halides and solid acids catalysts on the isomerization reaction from endo to exo THDMCPD.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1512-1514
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• 2001

In this work, PZT thin films were etched as a function of $Cl_2$/Ar and additive $CF_4$ into $Cl_2$(80%)/Ar(20%). The etch rates of PZT films were 1600 $\AA$/min at $Cl_2$(80%)/Ar(20%) gas mixing ratio and 1973 $\AA$/min at 30% additive $CF_4$ into $Cl_2$(80%)/Ar(20%). Therefore the etch rate of PZT in $CF_4/Cl_2/Ar$ plasma is faster than in $Cl_2$/Ar. From XPS and SIMS analysis, metal halides and C-O, FCI and $CClF_2$ were detected. The etching of PZT films in Cl-based plasma is primarily chemically assisted ion etching and the remove of nonvolatile etch byproducts is the dominant step. Consequently, we suggest that the increase of Cl radicals and the volatile oxy-compound such as $CO_y$ are made by adding $CF_4$ into $Cl_2$/Ar plasma. Therefore, the etch rate of PZT in $CF_4/Cl_2/Ar$ plasma is faster than in $Cl_2$/Ar. The etched profile of PZT films was obtained above 70$^{\circ}$ by the SEM micrograph.