• 제목/요약/키워드: metal bridge

검색결과 194건 처리시간 0.024초

Fiber Reinforced Inlay Adhesion Bridge

  • Cho, Lee-Ra;Yi, Yang-Jin;Song, Ho-Yong
    • 대한치과보철학회지
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    • 제38권3호
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    • pp.366-374
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    • 2000
  • FRC/ceromer system provides the clinician with a durable, flexible, and esthetic alternative to conventional porcelain fused to metal crowns. FRC is the matrix which is silica-coated and embedded in a resin matrix. The ceromer material which is a second generation indirect composite resin contains silanized, microhybrid inorganic fillers embedded in a light-curing organic matrix. FRC/ceromer restoration has a several advantages: better shock absorption, less wear of occluding teeth, translucency, color stability, bonding ability to dental hard tissues, and resiliency. It has versatility of use including inlay, onlay, single crown, and esthetic veneers. With adhesive technique, it can be used for single tooth replacement in forms of inlay adhesion bridge. In single tooth missing case, conventional PFM bridge has been used for esthetic restoration. However, this restoration has several disadvantages such as high cost, potential framework distortion during fabrication, and difficulty in repairing fractures. Inlay adhesion bridge with FRC/ceromer would be a good alternative treatment plan. This article describes a cases restored with Targis/Vectris inlay adhesion bridge. Tooth preparation guide, fabrication procedure, and cementation procedure of this system will be dealt. The strength/weakness of this restoration will be mentioned, also. If it has been used appropriately in carefully selected case, it can satisfy not only dentist's demand of sparing dental hard tissue but also patient's desire of seeking a esthetic restorations with a natural appearance.

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$LC_SC_P$ 공진 타입의 하프 브리지 인버터 구조를 가지는 전자식 안정기 보호회로 설계 (Design of the Protection circuit for Electric ballast with $LC_SC_P$ resonance type Half-bridge Inverter)

  • 최현희;박종연
    • 전기학회논문지
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    • 제58권8호
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    • pp.1538-1543
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    • 2009
  • The electric ballast for ceramic metal halide lamp needs a protection circuit to prevent from over voltage and over current in the case that the lamp or the electric ballast are in faults. In this paper, cost-effective and high performance protection circuit is proposed for the electric ballast. The proposed protection circuit is adapted to the electric ballast with $LC_SC_P$ resonance type half bridge inverter. The experimental results demonstrate that the proposed circuit can protect effectively under open and short fault conditions.

Weld Defect Formation Phenomena during High Frequency Electric Resistance Welding

  • Choi, Jae-Ho;Chang, Young-Seup;Kim, Yong-Seog
    • Journal of Welding and Joining
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    • 제19권3호
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    • pp.267-273
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    • 2001
  • In this study, welding phenomena involved in formation of penetrators during high frequency electric resistance welding were investigated. High speed cinematography of the process revealer that a molten bridge between neighboring skelp edges forms at apex point and travels along narrow gap toward to welding point at a speed ranging from 100 to 400 m/min. The bridge while moving along the narrow gap swept away oxide containing molten metal from the gap, providing oxide-free surface for a forge-welding at upsetting stand frequency of the budge formation, travel distance and speed of the bridge were affected by the heat input rate into strip. The travel distance and its standard deviation were found to have a strong relationship with the weld defect density. Based on the observation, a new mechanism of the penetrator formation during HF ERW process is proposed.

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치관보철물(齒冠補綴物) 제작(製作)에 사용(使用)되는 Nickel-Chromium계(系) 합금(合金)의 치경부(齒頸部) 변록(邊綠)에 관(關)한 적합성(適合性) (The Margin Fit of Nickel-Chromium Metal Alloys used for the Production of Crown and Bridge Prosthetics)

  • 이인규;최운재
    • 대한치과기공학회지
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    • 제13권1호
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    • pp.9-13
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    • 1991
  • The purpose of this study was to determine the marginal fit of recasting by used nickel-chromium metal alloys, Hi-Crown, New-Crown and CB-80. Ninety crown prosthetics were divided into eighteen groups according to new to old metal ratios. Each crown was seated on its master die and then the marginal gaps were measured under optical microscope($\times$50). All groups were showed good marginal fit, except group 3 of Hi-Crown(156$\mu$m). The results suggest that the marginal fit of Ni-Cr metal alloy casting bodies were good as without concerned to mixed ratios and metals.

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0.18${\mu}{\textrm}{m}$이하 metal layer 사진공정에서의 overlay 보정 (Overlay correction in sub-0.18${\mu}{\textrm}{m}$ metal layer photolithography process)

  • 이미영;이홍주
    • 한국산학기술학회:학술대회논문집
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    • 한국산학기술학회 2002년도 춘계학술발표논문집
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    • pp.106-108
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    • 2002
  • 반도체 physical layout design rule이 작아짐에 따라 Proximity effect와 overlay가 Pattern 구현에 크게 영향을 미치고 있다. Metal layer와 contact의 부족한 overlay margin으로 overlay 불량이 발생하고, 감소한 space margin으로 인해 bridge와 같은 문제가 나타난다. 따라서, resolution을 향상시키고, 최소한의 overlay margin을 확보함으로써 미세 pattern의 구현을 가능하게 한다. 이를 위해 OPC와 attPSM 같은 분해능향상기술이 사용된다. 그러나 attPSM의 사용은 원하지 않는 pattern이 생성되는 sidelobe와 같은 문제가 발생한다. 따라서 serial image simulation올 통해 추출한 rule을 rule-based correction에 적용하여 sidelobe현상을 방지한다. 그리고 overlay margin 부족으로 나타나는 문제는 metal layer와 contact overlap되는 영역의 line edge를 확장하고, rule checking을 통해 최소한의 space margin을 확보하여 해결한다 따라서 overlay error를 rule-based correction을 사용하여 효과적으로 방지한다.

One-step fabrication of a large area wire-grid polarizer by nanotransfer molding

  • Hwang, Jae-K.;Park, Kyung-S.;Sung, Myung-Mo
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.464-464
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    • 2011
  • We report a method to fabricate a large-area metal nanowire-grid polarizer. Liquid-bridge-mediated nanotransfer molding (LB-nTM) is based on the direct transfer of metal nanowires from a mold to a transparent substrate via liquid layer. A metal particle solution is used as an ink in the LB-nTM, which can be used for the formation of metal nanowires. The nanowires have higher depth are preferred for high transmittance. The height of nanowires that we made is about 140 nm. Large-area WGP is fabricated with good average transmittance of 74.89% in our measuring range.

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프리볼트입력용 메탈핼라이드램프 전자식안정기 개발 (Development of Electronic Ballast for Metal Halide Lamp wilts Free Voltage Input)

  • 김기정
    • 조명전기설비학회논문지
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    • 제16권1호
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    • pp.20-26
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    • 2002
  • 고압방전램프에는 고압수은램프, 고압나트륨램프와 메탈핼라이프램프가 있다. 메탈핼라이드램프는 가장 효율 좋을 램프들 중 하나이며 고효율, 고연색성과 집광능력이 좋다. 이 연구의 목적은 AC 100∼277의 프리볼트입력용 전자식안정기를 개발하여 메탈핼라이드(MH70W)를 점등시키는 것이다. 개발된 전자식안정기는 프리볼트입력용컨버터, 플라이백컨버터와 하프브리지인버터, 이그나이터와 보호기 그리고 제어기로 구성되어 있다. 실험 결과 개발된 전자식안정기는 프리볼트입력(AC 100∼277V)에 따라 메탈핼라이드램프(MH70W)가 매우 잘 점등되었다.

Analysis of Pull-in-Voltage and Figure-of-Merit of Capacitive MEMS Switch

  • Saha, Rajesh;Maity, Santanu;Devi, Ngasepam Monica;Bhunia, Chandan Tilak
    • Transactions on Electrical and Electronic Materials
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    • 제17권3호
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    • pp.129-133
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    • 2016
  • Theoretical and graphical analysis of pull-in-voltage and figure of merit for a fixed-fixed capacitive Micro Electromechanical Systems (MEMS) switch is presented in this paper. MEMS switch consists of a thin electrode called bridge suspended over a central line and both ends of the bridge are fixed at the ground planes of a coplanar waveguide (CPW) structure. A thin layer of dielectric material is deposited between the bridge and centre conductor to avoid stiction and provide low impedance path between the electrodes. When an actuation voltage is applied between the electrodes, the metal bridge acquires pull in effect as it crosses one third of distance between them. In this study, we describe behavior of pull-in voltage and figure of merit (or capacitance ratio) of capacitive MEMS switch for five different dielectric materials. The effects of dielectric thicknesses are also considered to calculate the values of pull-in-voltage and capacitance ratio. This work shows that a reduced pull-in-voltage with increase in capacitance ratio can be achieved by using dielectric material of high dielectric constant above the central line of CPW.

사용후 핵연료 차세대관리공정 원격 운전/유지보수용 천정이동 서보 매니퓰레이터 시스템 개발 (Development of a Bridge Transported Servo Manipulator System for the Remote Operation and Maintenance of Advanced Spent Fuel Conditioning Process)

  • 박병석;이종광;이효직;최창환;윤광호;윤지섭
    • 제어로봇시스템학회논문지
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    • 제13권10호
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    • pp.940-948
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    • 2007
  • The Advanced Spent Fuel Conditioning Process(ACP), which is the process of the reduction of uranium oxide by lithium metal in a high temperature molten salt bath for spent fuel, was developed at Korea Atomic Energy Research Institute (KAERI). Since the ACP equipment is located in an intense radiation field (hot cell) as well as in a high temperature, it must be remotely operated and maintained. The ACP hot cell is very narrow so the workspace of the wall-mounted mechanical Master-Slave Manipulators(MSMs) is restricted. A Bridge Transported Servo Manipulator(BTSM) system has been developed to overcome the limitation of an access that is a drawback of the mechanical MSMs. The BTSM system consists ot a bridge crane with telescoping tubeset, a slave manipulator, a master manipulator, and a control system. We applied a bilateral position-position control scheme with friction compensation as force-reflecting controller. In this paper, the transmission characteristics on the tendon-and-pulley train is numerically formulated and analyzed. Also, we evaluate the performance of the force-reflecting servo manipulator.

GaN FET 기반 동기정류기를 적용한 저전압-대전류 DC-DC Converter 효율예측 (A Study on the Efficiency Prediction of Low-Voltage and High-Current dc-dc Converters Using GaN FET-based Synchronous Rectifier)

  • 정재웅;김현빈;김종수;김남준
    • 전력전자학회논문지
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    • 제22권4호
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    • pp.297-304
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    • 2017
  • The purpose of this paper is to analyze losses because of switching devices and the secondary side circuit diodes of 500 W full bridge dc-dc converter by applying gallium nitride (GaN) field-effect transistor (FET), which is one of the wide band gap devices. For the detailed device analysis, we translate the specific resistance relation caused by the GaN FET material property into algebraic expression, and investigate the influence of the GaN FET structure and characteristic on efficiency and system specifications. In addition, we mathematically compare the diode rectifier circuit loss, which is a full bridge dc-dc converter secondary side circuit, with the synchronous rectifier circuit loss using silicon metal-oxide semiconductor (Si MOSFET) or GaN FET, which produce the full bridge dc-dc converter analytical value validity to derive the final efficiency and loss. We also design the heat sink based on the mathematically derived loss value, and suggest the heat sink size by purpose and the heat divergence degree through simulation.