• Journal of Internet Computing and Services
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• v.9 no.6
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• pp.117-125
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• 2008

With increase of concern about the Ubiquitous application, the necessity of the computer system which is miniaturized is becoming larger. The ARM processor is showing a high share from embedded system market. In this paper, ideal method for RTD-1000 controller construction and development is described using ARM microcontroller. Existing RTD-1000 measures distance of disconnection or defect of sensing casket by measuring receiving reflected wave which was sent via copper wire inside the leaking sensing rod. Using this RTD-1000, leakage and breakage of water and oil pipe can be sensed and it reports damage results to the networks. But, existing RTD-1000 wastes hardware resources much and costs a great deal to installation. Also, it needs a cooling device because the heating problem, and has some problem of the secondary memory unit such as the hard disk. So, long tenn maintenance has some problems in the outside install place. In this paper, for the resolving the problem of RTD-1000, RTD-1000A embedded system based on ARM is proposed and simulated.

• Journal of the Institute of Convergence Signal Processing
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• v.6 no.4
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• pp.169-175
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• 2005

In recent, implementation of the embedded system is gradually in the spotlight of world-wide by information technology(IT) engineers. By this time, an implementation of real time system is limited on image acquisition and processing system in practical. In this paper, the USB camera interface system based on the embedded linux OS is implemented using USB 2.0 camera with low cost. This system can obtain image signals into the memory via X-hyper255B processor from USB camera. It is need to initialize USB camera by the Video4Linux for the kernel device driver. From the system image capturing and image processing can be performed. It is confirmed that the image data can be transformed to packet of Network File System(NFS) and connected to the internetwork, then the data can be monitored from the client computer connected to the internetwork.

• Ceramist
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• v.21 no.2
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• pp.4-18
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• 2018

Lastly, neuromorphic computing chip has been extensively studied as the technology that directly mimics efficient calculation algorithm of human brain, enabling a next-generation intelligent hardware system with high speed and low power consumption. Three-terminal based synaptic transistor has relatively low integration density compared to the two-terminal type memristor, while its power consumption can be realized as being so low and its spike plasticity from synapse can be reliably implemented. Also, the strong electrical interaction between two or more synaptic spikes offers the advantage of more precise control of synaptic weights. In this review paper, the results of synaptic transistor mimicking synaptic behavior of the brain are classified according to the channel material, in order of silicon, organic semiconductor, oxide semiconductor, 1D CNT(carbon nanotube) and 2D van der Waals atomic layer present. At the same time, key technologies related to dielectrics and electrolytes introduced to express hysteresis and plasticity are discussed. In addition, we compared the essential electrical characteristics (EPSC, IPSC, PPF, STM, LTM, and STDP) required to implement synaptic transistors in common and the power consumption required for unit synapse operation. Generally, synaptic devices should be integrated with other peripheral circuits such as neurons. Demonstration of this neuromorphic system level needs the linearity of synapse resistance change, the symmetry between potentiation and depression, and multi-level resistance states. Finally, in order to be used as a practical neuromorphic applications, the long-term stability and reliability of the synapse device have to be essentially secured through the retention and the endurance cycling test related to the long-term memory characteristics.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.10
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• pp.438-442
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• 2005

Si nanocrystal (Si NC) memory device has several advantages such as better retention, lower operating voltage, reduced punch-through and consequently a smaller cell area, suppressed leakage current. However, the physical and electrical reasons for this behavior are not completely understood but could be related to interface states of Si NCs. In order to find out this effect, we characterized electrical properties of Si NCs embedded in a SiO$_{2}$ layer by scanning probe microscopy (SPM). The Si NCs were generated by the laser ablation method with compressed Si powder and followed by a sharpening oxidation. In this step Si NCs are capped with a thin oxide layer with the thickness of 1$\~$2 nm for isolation and the size control. The size of 51 NCs is in the range of 10$\~$50 m and the density around 10$^{11}$/cm$^{2}$ It also affects the interface states of Si NCs, resulting in the change of electrical properties. Using a conducting tip, the charge was injected directly into each Si NC, and the image contrast change and dC/dV curve shift due to the trapped charges were monitored. The results were compared with C-V characteristics of the conventional MOS capacitor structure.

• Journal of the Korean Ceramic Society
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• v.32 no.12
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• pp.1408-1416
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• 1995

Microstructure and ferroelectric properties of sol-gel derived PZT(52/48) and PT interlayered PZT(52/48) thin films on Pt/Ti/SiO2/Si substrates were investigated. Films were fabricated using Acetylacetone chelated PT and PZT(52/48) sols. PZT(52/48) thin films annealed at $700^{\circ}C$ for 20 min showed the rosette structure with the size of 1.2~1.6${\mu}{\textrm}{m}$ and the pyrochlore phse was contained. PT interlayered PZT thin films, which is inserted by PbTiO3 thin layer with the thickness of 130 $\AA$ between PZT thin film and electrode, consisted of a single perovskite phase after annealing above 55$0^{\circ}C$. They exhibited the uniform and columnar grains of 0.1~0.16${\mu}{\textrm}{m}$, which are applicable for microelectronic device including non-volatile memory. Typical P-E hysteresis loops could be obtained from PT interlayered PZT thin film at as low as the annealing temperature of 50$0^{\circ}C$. Ferroelectric properties of PT interlayered PZT thin films were improved as increasing annealing temperature up to $700^{\circ}C$, and then deteriorated at 75$0^{\circ}C$. PZT(52/48) and PT interlayered PZT(52/48) thin film annealed at $700^{\circ}C$ for 20 min displayed Ps=38.8$\mu$C/$\textrm{cm}^2$, Pr=10.0$\mu$C/$\textrm{cm}^2$, Ec=65.3 kV/cm and Ps=28.5$\mu$C/$\textrm{cm}^2$, Pr=9.8$\mu$C/$\textrm{cm}^2$, Ec=76.1 kV/cm, respectively.

• Journal of Digital Convergence
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• v.12 no.11
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• pp.265-272
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• 2014

This study suggests a system for preventing and coping with diverse industrial accidents available for taking place in the industrial field by designing a context-aware system of the solar cell equipment with the use of multi-sensor. It installs multi-sensor in the surrounding and major positions of the solar cell equipment, acquires data on the surrounding situations and solar cell equipment from this device, and then save it into the local memory and transmits it to the server. The saved data recognizes a situation based on the context-aware algorithm and judges depending on the perceived result. An administrator comes to have environment available for monitoring the status on the production field and equipments with real time according to the judged outcome through the context-aware algorithm. The context-aware system in the industrial field, which is put today in the ubiquitous environment, will become a service of offering appropriate information for dealing with industrial accidents through real-time inspection.

• Journal of KIISE
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• v.42 no.12
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• pp.1480-1485
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• 2015

As SSDs are increasingly being used as high-performance storage or caches, attention is increasingly paid to the provision of SSDs with Quality-of-Service for I/O request streams of various applications in server systems. Since most SSDs are using the AHCI controller interface on a SATA bus, it is not possible to provide a differentiated service by distinguishing each I/O stream from others within the SSD. However, since a new SSD interface, the NVME controller interface on a PCI Express bus, has been proposed, it is now possible to recognize each I/O stream and schedule I/O requests within the SSD for differentiated services. This paper proposes Flash Operation Group Scheduling within NVME-based flash storage devices, and demonstrates through QEMU-based simulation that we can achieve a proportional bandwidth share for each I/O stream.

• Journal of the Korea Society of Computer and Information
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• v.11 no.1 s.39
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• pp.251-258
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• 2006

When producing a wireless web contents by using wire web contents for PC environment, we should consider how to represent lots of information being suitable with PC environment to wireless devices having narrow performance. Therefore, we propose mobile page editor for manager to select and modify specific contents with the existing wire web page. Also, we try to define an intermediate language based on DID(Digital Item Declaration) of MPEG-21 multimedia framework which defines source of converting information and wireless web contents generating at mobile editor in considering real time service problem when transcoding multimedia information in a web server into wireless device having low resolution, narrow performance of media process, memory, and so on.

• Journal of the Korean Magnetics Society
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• v.16 no.3
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• pp.186-191
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• 2006

Ferromagnetic amorphous $Ni_{16}Fe_{62}Si_8B_{14}$ and $Co_{70.5}Fe_{4.5}Si_{15}B_{10}$ layers have been devised and incorporated as free layers of magnetic tunnel junctions (MTJs) to improve MRAM reading and writing performance. The NiFeSiB and CoFeSiB single-layer film exhibited a lower saturation magnetization ($Ms=800emu/cm^3,\;and\;560emu/cm^3$, respectively) compared to that of a $Co_{90}Fe_{10}(Ms=1400emu/cm^3)$. Because amorphous ferromagnetic materials have lower Ms than crystalline ones, the MTJs incorporating amorphous ferromagnetic materials offer lower switching field ($H_{sw}$) values than that of the traditional CoFe-based MTJ. The double-barrier MTJ with an amorphous NiFeSiB free layer offered smooth surface resulting in low bias voltage dependence, and high $V_h\;and\;V_{bd}$ compared with the values of the traditional CoFe-based MTJ.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.10a
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• pp.834-837
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• 2015

In this paper, we designed the FPGA hardware-based real-time ECG simulator, which generates an analog ECG signal within the range of 0 to 5 volts and described function. The ECG signal generated by the simulator can be applied to laboratory tests, the medical device, and the calibration study in various ways. ECG signals generated by simulator are obtained with conventional 24bit quantization to generate the signal data, and they are sampled and quantized to 1kHz of the 8-bit resolution when used as actual data. The proposed simulator is implemented using xilix Spartan-3 and data are transmitted through an RS-232 between the PC and the FPGA simulator. The transmitted data are stored in the memory and the stored data are printed out with the analog ECG signal through DAC (0808). It can also control the heart rate (HR) via the two buttons level UP-DOWN. We used existing ECG input rating for the evaluation of the designed system and evaluated differential circuit for obtaining QRS waveform and the output signal. We finally could obtained proper the result.