• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
• /
• v.22 no.2
• /
• pp.105-115
• /
• 2024

In this study, we employed a small-scale experiment to demonstrate the introduction of a thin copper heat dissipation plate into a bentonite buffer layer of an engineered barrier system. This experiment designed for spent nuclear fuel disposal can effectively reduce the maximum temperature of the bentonite buffer layer, and ultimately, make it possible to reduce the area of the disposal site. For the experiment, a small-scale engineered barrier system with a copper heat dissipation plate was designed and manufactured. the thickness of the cylindrical buffer was about 2 cm, which was about 1/20 of KAERI Repository System (KRS). At a power supply of 250 W, the maximum buffer temperature reduced to a mere 1.8℃ when the thin copper plate was introduced. However, the maximum surface temperature reduced to a remarkable 9.1℃, when a U-collar copper plate was introduced, which had a good contact with the other barrier layers. Consequently, we conclude that the introduction of the thin copper plate into the engineered barrier system for spent nuclear fuel disposal can effectively reduce the maximum buffer temperature in high-level radioactive waste disposal repositories.

• Nuclear Engineering and Technology
• /
• v.55 no.11
• /
• pp.4173-4180
• /
• 2023

The stability of engineered barriers in high-level radioactive waste disposal systems can be influenced by the decay heat generated by the waste. This study focuses on the thermal analysis of various canister designs to effectively lower the maximum temperature of the engineered barrier. A numerical model was developed and employed to investigate the heat dissipation potential of copper rings placed across the buffer. Various canister designs incorporating copper rings were presented, and numerical analysis was performed to identify the design with the most significant temperature reduction effect. The results confirmed that the temperature of the buffer material was effectively lowered with an increase in the number of copper rings penetrating the buffer. Parametric studies were also conducted to analyze the impact of technical gaps, copper thickness, and collar height on the temperature reduction. The numerical model revealed that the presence of gaps between the components of the engineered barrier significantly increased the buffer temperature. Furthermore, the reduction in buffer temperature varied depending on the location of the gap and collar. The methods proposed in this study for reducing the buffer temperature hold promise for contributing to cost reduction in radioactive waste disposal.

• Electrical & Electronic Materials
• /
• v.7 no.2
• /
• pp.117-122
• /
• 1994

The role of ZnS buffer layer not only suppresses chemical reactions between emission material and insulating material but also alters the luminescence and the crystallinity of the emission layer, if ZnS buffer layer was sandwiched between emission layer and insulating layer of electroluminescent device. In this research, we fabricated ZnS thin film with rf magnetron sputter system by varying rf power 100, 200W, substrate temperature 100, 150, 200, 250.deg. C and post-annealing temperature 200, 300, 400, 500.deg. C and analysed X-ray diffraction pattern, transmission spectra and cross section by SEM photograph for seeking the optimal crystallization condition of ZnS buffer layer. As a result, increasing the rf power, the crystallinity of ZnS thin film was improved. It was found that the ZnS thin film had better properties than anything else when fabricated with the following conditions ; rf power 200W, substrate temperature 150.deg. C, and post-annealing temperature 400.deg. C. ZnS thin film had the transmittance more than 80% in visible range. So it is suitable to use as a buffer layer of electroluminescent devices.

• Journal of Sensor Science and Technology
• /
• v.13 no.4
• /
• pp.277-281
• /
• 2004

$Hg_{1-x}Cd_{x}Te$ (MCT) was grown by hot wall epitaxy. Prior to the MCT growth, the CdTe (111) buffer layer was grown on the GaAs substrate at the temperature of $590^{\circ}C$ for 15 min. When the thickness of the CdTe buffer layer was $5{\mu}m$ or thicker, the full width at half maximum values obtained from the x-ray rocking curves were found to significantly decrease. After a good quality CdTe buffer layer was grown, the MCT epilayers were grown on the CdTe (111)/GaAs substrate at various temperatures in situ. The crystal quality for those epilayers was investigated by means of the x-ray rocking curves and the photocurrent experiment. The photoconductor characterization for the epilayers was also measured. The energy band gap of MCT was determined from the photocurrent measurement and the x composition rates from the temperature dependence of the energy band gap were turned out.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.7
• /
• pp.564-569
• /
• 2002

Heteroepitaxial GaN films were grown on sapphire substrates in order to study the effects of the buffer layer's surface roughness and thermal treatment on the epitaxial layer's quality. For this, GaN buffer layers were grown at $550^{\circ}C$ with various TMGa flow rates and durations of growth, and annealed at $1010^{\circ}C$ for 3 min after the temperature was raised by 23 ~ $92^{\circ}C/min$, and then GaN epitaxial layers were grown at $1000^{\circ}C$. It has been found that the buffer layer's surface roughness and the thermal treatment condition are critical factors on the quality of the epitaxial layer. When a buffer layer was frown with a TMGa flow rate of $24\mu mole/min$ for 30 sec, the surface roughness of the buffer lather was minimum and when the thermal ramping rate was $30.6^{\circ}C/min$ on this layer, the successively grown epitaxial layer's crystalline and optical qualities were optimized with a specular morphology. The minimum full width at half maximum(FWHM) of GaN(0002) x-ray diffraction peak and that of near-band-edge(NBE) peak from a room temperature photoluminescence (PL) were 5 arcmin and 9 nm, respectively.

• Tunnel and Underground Space
• /
• v.31 no.4
• /
• pp.221-242
• /
• 2021

A numerical study of the performance assesment of coupled thermo-hydro-mechanical (THM) processes in improved Korean reference disposal system (KRS⁺) for high-level radioactive waste is conducted using TOUGH2-MP/FLAC3D simulator. Decay heat from high-level radioactive waste increases the temperature of the repository, and it decreases as decay heat is reduced. The maximum temperature of the repository is below a maximum temperature criterion of 100℃. Saturation of bentonite buffer adjacent to the canister is initially reduced due to pore water evaporation induced by temperature increase. Bentonite buffer is saturated 250 years after the disposal of high-level radioactive waste by inflow of groundwater from the surrounding rock mass. Initial saturation of rock mass decreases as groundwater in rock mass is moved to bentnonite buffer by suction, but rock mass is saturated after inflow of groundwater from the far-field area. Stress changes at rock mass are compared to the Mohr-Coulomb failure criterion and the spalling strength in order to investigate the potential rock failure by thermal stress and swelling pressure. Additional simulations are conducted with the reduced spacing of deposition holes. The maximum temperature of bentonite buffer exceeds 100℃ as deposition hole spacing is smaller than 5.5 m. However, temperature of about 56.1% volume of bentonite buffer is below 90℃. The methodology of numerical modeling used in this study can be applied to the performance assessment of coupled THM processes for high-level radioactive waste repositories with various input parameters and geological conditions such as site-specific stress models and geothermal gradients.

• Journal of the Korean Vacuum Society
• /
• v.5 no.3
• /
• pp.258-262
• /
• 1996

We have investigated the changes in magnetoresistive characteristics, interfacial roughness, and preferred orientation with the Fe buffer layer thickness, annealing temperature, and the stacking number of layers variation in Fe/[NiFe/Cu] multilayers by using the 3-gun d.c. magnetron sputtering method. Intensity of the (200) orientation was increased with the increment of the Fe-buffer layer thickness. We found a maximum magnetoresistance ration of 4.7%, when the buffer layer thickness was 70$\AA$, and the field sensitivity also showed a maximum value at the same thickness. We varied the stacking number of multilayers with fixing the Fe buffer layer thickness of 70$\AA$. When the stacking number was 40 layers, maximum MR ratio(5.3%) was observed. With the variation of annealing temperature no change in the MR ratio was found beyond $300^{\circ}C$. But decrement of MR ratio was observed above $300^{\circ}C$. This decrement of the MR ratio was responsible for the increment of paramagnetic mixed layer caused by the diffusion of Cu layer and the change of antiferromagnetic coupling.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.11a
• /
• pp.116-119
• /
• 2003

[ $Hg_{1-x}Cd_xTe$ ] (MCT) was grown by hot wall epitaxy method. Prior to the MCT growth, the CdTe (111) buffer layer was grown on the GaAs substrate at the temperature of 590 C for 15 min. When the thickness of the CdTe buffer layer was 5 m or thicker, the full width at half maximum values obtained from the x-ray rocking curves were found to significantly decrease. After a good quality CdTe buffer layer was grown, the MCT epilayers were grown on the CdTe (111) /GaAs substrate at various temperature in situ. The crystal quality for those epilayers was investigated by means of the x-ray rocking curves and the photocurrent experiment. The photoconductor characterization for the epilayers was also measured. The energy band gap of MCT was determined from the photocurrent measurement and the x composition rates from the temperature dependence of the energy band gap were turned out.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.379-379
• /
• 2010

$Hg_{1_x}Cd_xTe$ (MCT) was grown by hot wall epitaxy. Prior to the MCT growth, the CdTe (111) buffer layer was grown on the GaAs substrate at the temperature of $590^{\circ}C$ for 15 min. When the thickness of the CdTe buffer layer was $5\;{\mu}m$ or thicker, the full width at half maximum values obtained from the x-ray rocking curves were found to significantly decrease. After a good quality CdTe buffer layer was grown, the MCT epilayers were grown on the CdTe (111) /GaAs substrate at various temperatures in situ. The crystal quality for those epilayers was investigated by means of the x-ray rocking curves and the photocurrent experiment. The photoconductor characterization for the epilayers was also measured. The energy band gap of MCT was determined from the photocurrent measurement and the x composition rates from the temperature dependence of the energy band gap were turned out.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.11a
• /
• pp.152-152
• /
• 2003

Hg$\sub$l-x/Cd$\sub$x/Te (MCT) was grown by hot wall epitaxy. Prior to the MCT growth, the CdTe (111) buffer layer was grown on the GaAs substrate at the temperature of 590$^{\circ}C$ for 15 min. When the thickness of the CdTe buffer layer was 5 $\mu\textrm{m}$ or thicker, the full width at half maximum values obtained from the x-ray rocking curves were found to significantly decrease. After a good quality CdTe buffer layer was grown, the MCT epilayers were grown on the CdTe (111) /GaAs substrate at various temperatures in situ. The crystal quality for those epilayers was investigated by means of the x-ray rocking curves and the photocurrent experiment The photoconductor characterization for the epilayers was also measured The energy band gap of MCT was determined from the photocurrent measurement and the x composition rates from the temperature dependence of the energy band gap were turned out