• 방사성폐기물학회지
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• 제22권2호
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• pp.105-115
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• 2024

In this study, we employed a small-scale experiment to demonstrate the introduction of a thin copper heat dissipation plate into a bentonite buffer layer of an engineered barrier system. This experiment designed for spent nuclear fuel disposal can effectively reduce the maximum temperature of the bentonite buffer layer, and ultimately, make it possible to reduce the area of the disposal site. For the experiment, a small-scale engineered barrier system with a copper heat dissipation plate was designed and manufactured. the thickness of the cylindrical buffer was about 2 cm, which was about 1/20 of KAERI Repository System (KRS). At a power supply of 250 W, the maximum buffer temperature reduced to a mere 1.8℃ when the thin copper plate was introduced. However, the maximum surface temperature reduced to a remarkable 9.1℃, when a U-collar copper plate was introduced, which had a good contact with the other barrier layers. Consequently, we conclude that the introduction of the thin copper plate into the engineered barrier system for spent nuclear fuel disposal can effectively reduce the maximum buffer temperature in high-level radioactive waste disposal repositories.

• Nuclear Engineering and Technology
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• 제55권11호
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• pp.4173-4180
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• 2023

The stability of engineered barriers in high-level radioactive waste disposal systems can be influenced by the decay heat generated by the waste. This study focuses on the thermal analysis of various canister designs to effectively lower the maximum temperature of the engineered barrier. A numerical model was developed and employed to investigate the heat dissipation potential of copper rings placed across the buffer. Various canister designs incorporating copper rings were presented, and numerical analysis was performed to identify the design with the most significant temperature reduction effect. The results confirmed that the temperature of the buffer material was effectively lowered with an increase in the number of copper rings penetrating the buffer. Parametric studies were also conducted to analyze the impact of technical gaps, copper thickness, and collar height on the temperature reduction. The numerical model revealed that the presence of gaps between the components of the engineered barrier significantly increased the buffer temperature. Furthermore, the reduction in buffer temperature varied depending on the location of the gap and collar. The methods proposed in this study for reducing the buffer temperature hold promise for contributing to cost reduction in radioactive waste disposal.

• E2M - 전기 전자와 첨단 소재
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• 제7권2호
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• pp.117-122
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• 1994

The role of ZnS buffer layer not only suppresses chemical reactions between emission material and insulating material but also alters the luminescence and the crystallinity of the emission layer, if ZnS buffer layer was sandwiched between emission layer and insulating layer of electroluminescent device. In this research, we fabricated ZnS thin film with rf magnetron sputter system by varying rf power 100, 200W, substrate temperature 100, 150, 200, 250.deg. C and post-annealing temperature 200, 300, 400, 500.deg. C and analysed X-ray diffraction pattern, transmission spectra and cross section by SEM photograph for seeking the optimal crystallization condition of ZnS buffer layer. As a result, increasing the rf power, the crystallinity of ZnS thin film was improved. It was found that the ZnS thin film had better properties than anything else when fabricated with the following conditions ; rf power 200W, substrate temperature 150.deg. C, and post-annealing temperature 400.deg. C. ZnS thin film had the transmittance more than 80% in visible range. So it is suitable to use as a buffer layer of electroluminescent devices.

• 센서학회지
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• 제13권4호
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• pp.277-281
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• 2004

$Hg_{1-x}Cd_{x}Te$ (MCT) was grown by hot wall epitaxy. Prior to the MCT growth, the CdTe (111) buffer layer was grown on the GaAs substrate at the temperature of $590^{\circ}C$ for 15 min. When the thickness of the CdTe buffer layer was $5{\mu}m$ or thicker, the full width at half maximum values obtained from the x-ray rocking curves were found to significantly decrease. After a good quality CdTe buffer layer was grown, the MCT epilayers were grown on the CdTe (111)/GaAs substrate at various temperatures in situ. The crystal quality for those epilayers was investigated by means of the x-ray rocking curves and the photocurrent experiment. The photoconductor characterization for the epilayers was also measured. The energy band gap of MCT was determined from the photocurrent measurement and the x composition rates from the temperature dependence of the energy band gap were turned out.

• 한국전기전자재료학회논문지
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• 제15권7호
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• pp.564-569
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• 2002

Heteroepitaxial GaN films were grown on sapphire substrates in order to study the effects of the buffer layer's surface roughness and thermal treatment on the epitaxial layer's quality. For this, GaN buffer layers were grown at $550^{\circ}C$ with various TMGa flow rates and durations of growth, and annealed at $1010^{\circ}C$ for 3 min after the temperature was raised by 23 ~ $92^{\circ}C/min$, and then GaN epitaxial layers were grown at $1000^{\circ}C$. It has been found that the buffer layer's surface roughness and the thermal treatment condition are critical factors on the quality of the epitaxial layer. When a buffer layer was frown with a TMGa flow rate of $24\mu mole/min$ for 30 sec, the surface roughness of the buffer lather was minimum and when the thermal ramping rate was $30.6^{\circ}C/min$ on this layer, the successively grown epitaxial layer's crystalline and optical qualities were optimized with a specular morphology. The minimum full width at half maximum(FWHM) of GaN(0002) x-ray diffraction peak and that of near-band-edge(NBE) peak from a room temperature photoluminescence (PL) were 5 arcmin and 9 nm, respectively.

• 터널과지하공간
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• 제31권4호
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• pp.221-242
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• 2021

기존의 한국형 기준 처분시스템의 처분 효율을 높인 향상된 한국형 기준 처분시스템(Improved Korean Reference Disposal System, KRS⁺)의 열-수리-역학적 복합거동 성능평가를 위해 TOUGH2-MP/FLAC3D를 이용한 수치모델링 연구가 수행되었다. 사용후핵연료 처분 이후 방사성 붕괴열에 의해 처분시스템의 온도가 상승하고, 방사성 붕괴열이 빠르게 감소함에 따라 온도가 감소하여 최대 온도가 설계기준 온도인 100℃를 넘지 않는 것으로 나타났다. 완충재의 초기 포화도는 온도 상승으로 인한 공극수의 증발로 인해 감소하였다가 주변 암반으로부터 지하수가 유입되어 처분 약 250년 후 포화 상태에 이르렀다. 암반에서는 완충재와 암반의 흡입력의 차이로 인해 암반에서 완충재로 지하수가 유입되어 처분 직후 포화도가 감소하다가 이후 원계 암반으로부터 지하수가 유입되어 포화 상태에 도달했다. 처분시스템 내 열응력과 팽윤압 발생에 의한 주변 암반의 파괴 가능성을 평가하고자 모어-쿨롱 파괴기준식과 스폴링 강도를 사용하였다. KRS⁺ 처분시스템의 처분공의 간격을 감소시키면서 처분시스템의 열적 거동 변화를 확인하였는데, 처분공 간격이 5.5 m 이하에서는 완충재의 설계 기준 온도를 초과하게 된다. 다만, 벤토나이트 완충재 부피의 56.1%의 온도는 90℃ 이하로 유지되었다. 본 연구에서 사용한 수치해석 기법은 향후 응력 모델, 지온 경사 및 입력 물성을 변화시킨 다양한 조건에서의 처분시스템의 THM 복합거동 성능평가에 활용할 수 있을 것으로 판단된다.

• 한국진공학회지
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• 제5권3호
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• pp.258-262
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• 1996

d.c.magnetron sputtering 방법으로 제작된 Fe/[NiFe/Cu] 다층박막을 Fe 기저층의 두께, 적층횟수 및 열처리 온도 변화에 따라 자기저항비가 계면 거칠기 및 우선 배향에 미치는 영향에 대하여 조사하였다. Fe 기저층의 두께가 증가함에 따라 (200) 우선 배향의 세기라 증가하였으며, 자기저항비는 Fe70$\AA$의 두께어서 최대값 4.7%를 보이며 이때 자장감응도도 최대를 나타낸다. Fe 기저층의 두께를 70$\AA$ 으로 고정시키고 적층횟수를 변화시켰을 때 40층에서 최대값 5.3%를 보였다. 열처리 온도에 따른 자기저항비는 $300^{\circ}C$이하에서는 커다란 변화가 없으며, $300^{\circ}C$이상에서는 크게 감소하였는데, 이는 Cu의 확산에 의한 상자성 혼합층의 증가와 반강자성석으로 결함된 자성층간의 배열의 변화가 그 원인이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.116-119
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• 2003

[ $Hg_{1-x}Cd_xTe$ ] (MCT) was grown by hot wall epitaxy method. Prior to the MCT growth, the CdTe (111) buffer layer was grown on the GaAs substrate at the temperature of 590 C for 15 min. When the thickness of the CdTe buffer layer was 5 m or thicker, the full width at half maximum values obtained from the x-ray rocking curves were found to significantly decrease. After a good quality CdTe buffer layer was grown, the MCT epilayers were grown on the CdTe (111) /GaAs substrate at various temperature in situ. The crystal quality for those epilayers was investigated by means of the x-ray rocking curves and the photocurrent experiment. The photoconductor characterization for the epilayers was also measured. The energy band gap of MCT was determined from the photocurrent measurement and the x composition rates from the temperature dependence of the energy band gap were turned out.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.379-379
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• 2010

$Hg_{1_x}Cd_xTe$ (MCT) was grown by hot wall epitaxy. Prior to the MCT growth, the CdTe (111) buffer layer was grown on the GaAs substrate at the temperature of $590^{\circ}C$ for 15 min. When the thickness of the CdTe buffer layer was $5\;{\mu}m$ or thicker, the full width at half maximum values obtained from the x-ray rocking curves were found to significantly decrease. After a good quality CdTe buffer layer was grown, the MCT epilayers were grown on the CdTe (111) /GaAs substrate at various temperatures in situ. The crystal quality for those epilayers was investigated by means of the x-ray rocking curves and the photocurrent experiment. The photoconductor characterization for the epilayers was also measured. The energy band gap of MCT was determined from the photocurrent measurement and the x composition rates from the temperature dependence of the energy band gap were turned out.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.152-152
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• 2003

Hg$\sub$l-x/Cd$\sub$x/Te (MCT) was grown by hot wall epitaxy. Prior to the MCT growth, the CdTe (111) buffer layer was grown on the GaAs substrate at the temperature of 590$^{\circ}C$ for 15 min. When the thickness of the CdTe buffer layer was 5 $\mu\textrm{m}$ or thicker, the full width at half maximum values obtained from the x-ray rocking curves were found to significantly decrease. After a good quality CdTe buffer layer was grown, the MCT epilayers were grown on the CdTe (111) /GaAs substrate at various temperatures in situ. The crystal quality for those epilayers was investigated by means of the x-ray rocking curves and the photocurrent experiment The photoconductor characterization for the epilayers was also measured The energy band gap of MCT was determined from the photocurrent measurement and the x composition rates from the temperature dependence of the energy band gap were turned out