• 대한디지털의료영상학회논문지
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• 제8권1호
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• pp.51-55
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• 2006

moving photocarrier grating(MPG)기술을 이용하여 디지털 X-선 변환물질 a-Se:As 필름에서 As 첨가효과에 관하여 연구하였다. 이 방법은 시료를 조사하기 위하여 주파수를 변화시킨 2개 레이저 빔의 중첩으로 얻어진 움직이는 간섭패턴을 이용한다. 시료의 수송변수는 시료에서 변조 방향으로 유도되는 grating-속도에 의존하는 전류밀도로부터 얻어진다. As 첨가에 따른 a-Se 필름의 전자와 정공 이동도 그리고 재결합 수명을 구하였다. 전자의 이동도는 결함 상태 때문에 As 첨가에 따라 감소하는 반면, 특히 a-Se 필름에 0.3% As 첨가할 때 정공 이동도와 재결합 수명이 증가하였다. MPG 기술로 얻은 As가 첨가된 a-Se 필름의 수송성질을 a-Se:As로 제작한 X-선 detector의 X-선 감도와 비교하였다. 실험결과 0.3% As가 첨가된 a-Se으로 제작한 X-선detector가 가장 우수한 X-선 감도를 나타내었다.

• 대한화학회지
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• 제43권3호
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• pp.315-320
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• 1999

고성능 전계발광(electroluminescent, EL) 소자에 사용되는 발광물질의 개발을 위하여 설계된 발광기능기의 분자구조는 비스스틸렌구조의 발광기능기에 전자주입과 수송을 위한 시안기와 정공주입과 수송을 위한 페닐아민기를 가진 구조이다. 위의 발광기능기로 구성 된 고분자물질, PU-BCN과 저분자물질, D-BCN을 합성하였다. PU-BCN과 D-BCN을 발광층으로 사용하여 만들어진 단층형 소자(SL)의 구조는 Indium-tin oxide(ITO)/발광층/MgAg이고, 적층형소자의 구조는 ITO/발광층/oxadiazole dehvative/MgAg, (DL-E)와 ITO/tri-phenylamine derivative/발광층/MgAg,(DL-H)의 두 종류이다. 동일한 발광기능기를 가진 고분자 발광물질, PU-BCN과 저분자발광물질, D-BCN은 전하주입과 수송성이 띄어난 물질로 평가되었으며, 두 발광물질들은 높은 전류밀도하에서 거의 동일한 발광특성을 보였다. 발광물질들의 최대 발광 피이크는 약 640 nm의 적색 발광영역에서 측정되었다.

• 한국산업정보학회논문지
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• 제10권2호
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• pp.76-81
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• 2005

본 연구에서는 차세대 디스플레이 소자로 각광을 받고 있는 유기발광 소자의 전기적인 특성을 해석적으로 접근하였다. 기본적인 OLED의 동작 메카니즘은 일함수(work function)가 낮은 음극(cathode) 전극으로부터 주입된 전자(electron)와 양극(anode) 전극으로 주입된 정공(hole)이 수송층을 지나 발광층으로 유입되어 여기상태(exciton state)를 거치며 재결합함으로써 발광되는 것으로 알려져 있다. 따라서 음극과 양극을 통해 들어오는 수송자(carrier)들이 원활한 전자-정공 쌍(electron - hole pair)을 이루기 위해 다층 박막 구조로 소자를 제작하여 높은 에너지 장벽을 완만하게 만들고 또한 박막의 두께를 조절하여 정공과 전자의 이동도 밸런스(balance)를 맞추어 수송자-전자와 정공-들이 수송층(CTL : carrier transport layer)을 통해 발광층(EML : emitting material layer)으로 주입을 용이하게 만든다 따라서 본 논문에서는 유기 발광소자의 최적의 발광특성을 얻기 위해서는 수치 해석을 통한 가장 높은 발광 효율을 가지게되는 박막의 두께를 예측하고 예측된 유기발광소자의 수치해석 값이 실제 제작된 소자의 특성 값과 일치하여 타당성이 있음을 증명하고자 한다.

• Advances in nano research
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• 제10권5호
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• pp.415-422
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• 2021

Silicene, a 2D allotrope of silicon, is predicted to be a potential material for future transistor that might be compatible with present silicon fabrication technology. Similar to graphene, silicene exhibits the honeycomb lattice structure. Consequently, silicene is a semimetallic material, preventing its application as a field-effect transistor. Therefore, this work proposes the uniform doping bandgap engineering technique to obtain the n-type silicene nanosheet. By applying nearest neighbour tight-binding approach and parabolic band assumption, the analytical modelling equations for band structure, density of states, electrons and holes concentrations, intrinsic electrons velocity, and ideal ballistic current transport characteristics are computed. All simulations are done by using MATLAB. The results show that a bandgap of 0.66 eV has been induced in uniformly doped silicene with phosphorus (PSi₃NW) in the zigzag direction. Moreover, the relationships between intrinsic velocity to different temperatures and carrier concentration are further studied in this paper. The results show that the ballistic carrier velocity of PSi₃NW is independent on temperature within the degenerate regime. In addition, an ideal room temperature subthreshold swing of 60 mV/dec is extracted from ballistic current-voltage transfer characteristics. In conclusion, the PSi₃NW is a potential nanomaterial for future electronics applications, particularly in the digital switching applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.1046-1049
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• 2002

In this study, We fabricated Organic Electroluminescence device, in order to improve the efficiency of Blue OLED in the full-color OLED. We made two sample. Sample A is that We used TPD(N,N‘-bis(3-methylphenyl)-N,N'-diphenylbenzidine} as hole transport layer(HTL), and Butyl-PBD(2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole) as emitting material layer(EML) and Alq3(8-Hydroxyquinoline, aluminum} as electron transport layer(ETL). Sample B is that we used TPD(N, N'-bis(3-methylphenyl)-N,N'-diphenylbenzidine} as HTL and co-evaporated Butyl-PBD and Alq3 as EML. We investigated the characteristic of brightness and current-:voltage. The sample B that co-evaporated Butyl-PBD and Alq3 as EML improved characteristic of brightness and current-voltage than sample A. Maximum luminescence of sample B is $310cd/m^2$ and threshold voltage is 7V.

• 대한안전경영과학회지
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• 제12권1호
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• pp.35-42
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• 2010

Due to the industrialization and urbanization, the transport of hazardous materials increases, which rises possibilities in occurring prospective accidents in terms of hazardous material transport as well. This study applied the model developed from the previous research to analyze the scale of damage areas from the accidents related to hazardous material accidents, as well as suggested a method to measure automatically the scale of accident including casualties and environmental damage based on the guideline which suggests the quantities of hazardous materials exposed from an accident and was defined in the study of standardization for hazardous material classification. A buffering analysis technique of Geographic Information System (GIS) was applied for that. To apply the model which evaluates the scale of population and exposure to environment on each link, rail network, zones, rail accident data, rail freight trips, and locations of rivers etc were complied as a database for GIS analysis. In conclusion, a method to measure damage areas by the types of hazardous materials was introduced using a Clip and a Special Join technique for overlay analysis.

• 한국ITS학회 논문지
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• 제9권4호
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• pp.22-31
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• 2010

본 논문에서는 메타 인공 물질을 이용한 스플릿 링 공진기를 새롭게 제안하여 2단 필터를 설계 하였다. 제안된 필터는 새로운 공진기의 크기를 자유롭게 조절할 수가 있고, 탭-선로의 위치를 이용하여 대역폭을 쉽게 조절할 수가 있다. 제안된 공진기 및 필터는 군사용 위성통신 대역인 I-밴드의 10 GHz 중심 주파수에서, 공진기의 Qe값은 184이며, 필터의 대폭은 10 %이고, 삽입손실 및 반사손실은 각각 1.43 dB 와 16.8 dB의 값을 얻었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1319-1322
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• 2008

$CsN_3$ was developed as a novel n doping material with air stability and low deposition temperature. Evaporation temperature of $CsN_3$ was similar to that of common hole injection material and it worked well as a n dopant in electron transport layer. Driving voltage was lowered and high power efficiency was obtained in green phosphorescent devices by using $CsN_3$ as a dopant in electron transport layer. It could also be used as a charge generation layer in combination with $MoO_3$. In addition, n doping mechanism study revealed that $CsN_3$ is decomposed into Cs and $N_2$ during evaporation. This is the first work reporting air stable and low temperature evaporable n dopant in organic light-emitting diodes.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.492-496
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• 2001

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e,g. As, Cl). In this paper, We investigated dopants(As, Cl) composition rate to improve dark resistivity and transport properties of charge carrier in amorphous selenium using by direct X-ray conversion material. Alloying a-Se with As inhibits the recrystallization of a-Se but introduces undesirable deep hole traps. then doping with Cl(in the ppm range) compensates for the deep hole traps. We investigated their composition rate in various doping conditions and then obtained optimum dopant composition rate. The result was Se-As 0.3%-c] 30 ppm and X-ray Sensitivity was 0.57 pC/$pixel{\cdot}mR$ at $137{\mu}m{\times}137{\mu}m$ Pixel area.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.230-233
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• 2001

FeSi2/Si Layer were grown using FeSi2, Si wafer by the chemical transport reactio nmethod. The directoptical energy gap was found to be 0.871eV at 300 K. The Hall effect is a physical effect arising in matter carrying electric current inthe presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. IN this paper, we study electrical properties of FeSi2/Si layer. And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important part for it applicationVarious phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.