• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.05a
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• pp.283-284
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• 2010

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.547-552
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• 2003

In mold machining, there are many concave machining regions where chatter and tool deflection occur since MRR (material removal rate) increases as curvature increases even though cutting speed and depth of cut are constant. Boolean operation between stock and tool model is widely used to compute MRR in NC milling simulation. In finish cutting, the side step is reduced to about 0.3mm and tool path length is sometimes over 300m. so Boolean operation takes long computation time and includes much error if the resolution of stock and tool model is larger than the side step. In this paper, curvature of CL(cutter location) surface and side step of tool path is used to compute the feedrate for constant MRR machining. The data structure of CL surface is Z-map generated from NC tool path. The algorithm to get local curvature from discrete data was developed and applied to compute local curvature of CL surface. The side step of tool path was computed by point density map which includes cutter location point density at each grid element. The feedrate computed from curvature and side step is inserted to new tool path to regulate MRR. The resultants wire applied to feedrate optimization system which generates new tool path with feedrate from NC codes for finish cutting. The system was applied to speaker mold machining. The finishing time was reduced to 12.6%. tool wear was reduced from 2mm to 1.1mm and chatter marks and over cut on corner were removed.

• Transactions of Materials Processing
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• v.13 no.3
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• pp.225-229
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• 2004

Chemical Mechanical Polishing(CMP) process becomes one of the most important semiconductor processes. But the basic mechanism of CMP still does not established. Slurry fluid dynamics that there is a slurry film between a wafer and a pad and contact mechanics that a wafer and a pad contact directly are the two main studies for CMP. This paper based on the latter one, especially on the abrasion wear model. Material Removal Rate(MRR) is calculated using the trajectory length of every point on a wafer during the process time. Both the rotational velocity of a wafer and a pad and the wafer oscillation velocity which has omitted in other studies are considered. For the purpose of the verification of our simulation, we used the experimental results of S.H.Li et al. The simulation results show that the tendency of the calculated MRR using the relative velocity is very similar to the experimental results and that the oscillation effect on MRR at a real CMP condition is lower than 1.5%, which is higher than the relative velocity effect of wafer, and that the velocity factor. not the velocity itself, should be taken into consideration in the CMP wear model.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.1
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• pp.11-17
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• 2010

This study investigates the non-traditional manufacturing process of dry wire electrical discharge machining (EDM) in which liquid dielectric is replaced by a gaseous medium. Wire EDM experiments of thin workpieces were conducted both in wet and dry EDM conditions to examine the effects of spark cycle (T), spark on-time ($T_{on}$), thickness of work pieces, and work material on machining performance. The material removal rate (MRR) in the dry wire EDM case was much lower than that in the wet wire EDM case. In addition, the thickness of workpiece and work-material were found to be critical factors influencing the MRR for dry EDM process. The relative ratios of spark, arc and short circuit were also calculated and compared to examine the effectiveness of processes of dry and wet wire EDM.

• Tribology and Lubricants
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• v.30 no.3
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• pp.139-145
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• 2014

Nowadays, most micro-patterns are manufactured during flow line production. However, a conventional rotary chemical mechanical polishing (CMP) system has a limited throughput for the fabrication of large and flexible electronics. To overcome this problem, we propose a novel linear roll-CMP system for the planarization of large-area electronics. In this paper, we present a statistical analysis on the linear roll-CMP process of copper-clad laminate (CCL) to determine the impacts of process parameters on the material removal rate (MRR) and its non-uniformity (NU). In the linear roll-CMP process, process parameters such as the slurry flow rate, roll speed, table feed rate, and down force affect the MRR and NU. To determine the polishing characteristics of roll-CMP, we use Taguchi's orthogonal array L16 (44) for the experimental design and F-values obtained by the analysis of variance (ANOVA). We investigate the signal-to-noise (S/N) ratio to identify the prominent control parameters. The "higher is better" for the MRR and "lower is better" for the NU were selected for obtaining optimum CMP performance characteristics. The experimental and statistical results indicate that the down force and roll speed mainly affect the MRR and the down force and table feed rate determine the NU in the linear roll-CMP process. However, over 186.3 N of down force deteriorates the NU because of the bending of substrate. Roll speed has little relationship to the NU and the table feed rate does not impact on the MRR. This study provides information on the design parameter of roll-CMP machine and process optimization.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.06a
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• pp.95-96
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• 2009

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.7 no.1
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• pp.34-40
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• 1998

Conductive metal matrix composite(MMC) material of 30% silicon carbide particulated based on aluminum matrix was machined by die sinking electrical discharge machining(EDM) process according to different current and duty factor for reverse polarity of electrode. Material removal rate(MRR) was examined by process under various operation conditions. The surface morphology was evaluated by surface roughness parameter and scanning electron microscopy(SEM) research. The MRR was suddenly increased over 11 ampere of current, and it was slightly changed over 0.3 of duty factor. The maximum surface roughness of EDMed surface was affected by the duty factor. The SEM photograghs of EDMed surface showed wide recast distribution region of melting materials as increased of current and duty factor.

• Journal of the Semiconductor & Display Technology
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• v.6 no.3
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• pp.1-6
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• 2007

The integrated thermal-chemical-mechanical (TCM) material removal model presented in the companion paper is dynamically simulated in this work. The model is applied to a Cu CMP process for the simulation and the results of the three individual ingredients composing the model are presented separately first. These results are then incorporated to calculate the total material removal rate (MRR) of the Cu CMP. It is shown that the non-linear trend of MRR with respect to the applied mechanical power (i.e., non-Prestonian behavior), which is not well explained with the models established in principle on conventional contact mechanics, may be due to the chemical reaction(s) varying non-linearly with the temperature in the wafer.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.04a
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• pp.827-831
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• 1997

Conductive veramic matrix composite(CMC) workpiece of TiC 33%/Al /sab 2/O /sab 3/ 66% Y /sab 2/ O /sab 3/ was machined by die sinking electrical discharge machining(EDM) according to different pulse duration and suty factor for reverse polarity of electrode. Material removal rate(MRR) was examined by process under various operating conditions. The surface morphology was evaluated by surface roughness values and scanning electron microscopy(SEM) research. The more MRR was obtained according to increase pulse duration and duty factor. Also the maximum surface roughness(Rmax) of EDMed surface was slightly changed with increased pulse duration and duty factor. The SEM photographs of EDMed surface showed wide recast wide recast distribution region of melting materials in purse duration 0.130(ms) than 0.048(ms).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.482-483
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• 2009

In chemical mechanical planarization (CMP) process, the uniformity of stress acting on wafer surface is a key factor for uniform material removal of thin film especially in the oxide CMP. In this paper, we analyze the stress on the contact region between wafer and pad with finite-element analysis (FEA). The setting pressure acting on wafer back side was $500g/cm^2$ and the retainer pressure was changed from 300 to $700g/cm^2$. The polishing test is also done with the same conditions. The material removal rate profiles well-matched with stress distribution.