• Journal of Advanced Marine Engineering and Technology
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• v.22 no.6
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• pp.809-815
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• 1998

This study has been performed to investigate MRR(metal removal rate) surface roughness with various pulse-on duration using the copper and graphite electrode according to the electrode size on the heat treated STD 11 which is extensively used for metallic molding steel in the EDM. The results obtained are as follow ;a)MRR increases a lot when pulse-on duration is 100 $\mu{s}$ or less but MRR has little difference with pulse-on duration of 100 $\mu{s}$ or more b) According to the increase of Pulse-on duration the large the electrode size the more MRR c) Safe discharge is needed to make maximum of MRR and the metallic organization must be complicated for discharge induction. d) Actual machining time is longer than theoretical machining time at the short pulse-on duration because of skin effect of current. e) Graphite electrode needs the larger electric discharge energy than copper electrode to remove remained chips completely.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.12
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• pp.183-190
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• 2003

In this paper, investigated are the machining characteristics such as material removal rate and machining time with respect to discharge area and capacitance in micro electrical discharge machining (MEDM). As discharge area determined by the electrode size and capacitance change, the optimal feedrate to allow the minimum machining time changes. The smaller discharge area is, the lower MRR becomes because of the area effect. As the capacitance increases, MRR also increases. However there is the limit capacitance beyond which the MRR does not increase anymore. As the discharge area increases, the limit capacitance also increases.

• Tribology and Lubricants
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• v.34 no.6
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• pp.209-216
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• 2018

Sapphire is a substrate material that is widely used in optical and electronic devices. However, the processing of sapphire into a substrate takes a long time owing to its high hardness and chemical inertness. In order to process the sapphire ingot into a substrate, ingot growth, multiwire sawing, lapping, and polishing are required. The lap grinding process using pellets is known as one of the ways to improve the efficiency of sapphire substrate processing. The lap grinding process ensures high processing efficiency while utilizing two-body abrasion, unlike the lapping process which utilizes three-body abrasion by particles. However, the lap grinding process has a high material removal rate (MRR), while its weakness is in obtaining the required surface roughness for the final polishing process. In this study, we examine the effects of free abrasives in lap grinding on the material removal characteristics of sapphire substrate. Before conducting the lap grinding experiments, it was confirmed that the addition of free abrasives changed the friction force through the pin-on-disk wear test. The MRR and roughness reduction rate are experimentally studied to verify the effects of free abrasive concentration on deionized water. The addition of free abrasives (colloidal silica) in the lap grinding process can improve surface roughness by three-body abrasion along with two-body abrasion by diamond grits.

• Tribology and Lubricants
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• v.39 no.2
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• pp.72-75
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• 2023

Silicon carbide (SiC) is used as a substrate material for power semiconductors; however, SiC chemical mechanical polishing (CMP) requires considerable time owing to its chemical stability and high hardness. Therefore, researchers are attempting to increase the material removal rate (MRR) of SiC CMP using various methods. Mixed-abrasive CMP (MAS CMP) is one method of increasing the material removal efficiency of CMP by mixing two or more particles. The aim of this research is to study the mathematical modeling of the MRR of MAS CMP of SiC with SiO₂ and TiO₂ particles. With a total particle concentration of 32 wt, using 80-nm SiO₂ particles and 25-nm TiO₂ particles maximizes the MRR at 8 wt of the TiO₂ particle concentration. In the case of 5 nm TiO₂ particles, the MRR tends to increase with an increase in TiO₂ concentration. In the case of particle size 10-25 nm TiO₂, as the particle concentration increases, the MRR increases to a certain level and then decreases again. TiO₂ particles of 25 nm or more continuously decreased MRR as the particle concentration increased. In the model proposed in this study, the MRR of MAS CMP of SiC increases linearly with changes in pressure and relative speed, which shows the same result as the Preston's equation. These results can contribute to the future design of MAS; however, the model needs to be verified and improved in future experiments.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1996.04a
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• pp.3-7
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• 1996

Metal Matrix Composite(MMC) material of 30% SiC particulate based on A1 matrix was machined by drilling and Electrical Discharge Machining (EDM) processes. When drilling process was executed, surface fracture due to brittle property near the bottom was found. It was also found the possiblity of difficult shape of EDM process for MMC material, but few the research about basic EDM characteristics. Material Removal Rate(MRR) was examined for different conditions and the surface morphology was evaluated by roughness values and Scanning Electron Microscopy(SEM) research. The higher the current is, the more MRR was obtained but the higher MRR was showed around 0.45 duty factor. The average roughness of EDMed surface was slightly changed with increased pulse current and increases with duty factor. The SEM photographs of EDMed surface showed recast region after melting.

• Tribology and Lubricants
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• v.33 no.5
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• pp.214-219
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• 2017

Abrasive fluidized bed machining (AFBM) is similar to general abrasive fluidized machining (AFM) in that it can perform polishing of the outer and inner surfaces of a 3-dimensional shape by the flow of particles. However, in the case of AFM, the shear force generated by the flow of the particles causes material removal, while in AFBM, the abrasive particles are suspended in the chamber to form a bed. AFBM can be used for deburring, polishing, edge contouring, shot peening, and cleaning of mechanical parts. Most studies on AFBM are limited to metals, and research on application of AFBM to plastic materials has not been performed yet. Therefore, in this study, we investigate the effect of rotating speed of the specimen and the air flow rate on the material removal characteristics during AFBM of polyacetal with a horizontal AFBM machine. The material removal rate (MRR) increases linearly with increase of the rotating speed of the main shaft because of the shear force between the particles of the fluidized bed and the rotation of the workpiece. The reduction in surface roughness tends to increase as the rotating speed of the main shaft increases. As the air flow rate increases, the MRR tends to decrease. At a flow rate of 70 L/min or more, the MRR remains almost constant. The reduction of the surface roughness of the specimen is found to decrease with increasing air flow rate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.5
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• pp.358-363
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• 2010

The polishing pad is important element for polishing characteristic such as material removal rate(MRR) and within wafer non-uniformity(WIWNU) in the chemical mechanical planarization(CMP). The result of the viscoelasticity measurement shows that 1st elastic modulus is increased and 2nd elastic modulus is decreased when the top pad is thickened. The finite element analysis(FEA) was conducted to predict characteristic of polishing behavior according to the pad thickness. The result of polishing experiment was similar with the FEA, and it shows that the 1st elastic modulus affects instantaneous deformation of pad related to MRR. And the 2nd elastic modulus has an effect on WIWNU due to the viscoelasticity deformation of pad.

• Tribology and Lubricants
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• v.37 no.6
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• pp.208-212
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• 2021

Chemical mechanical polishing (CMP) is a key technology used for the global planarization of thin films in semiconductor production and smoothing the surface of substrate materials. CMP is a type of hybrid process using a material removal mechanism that forms a chemically reacted layer on the surface of a material owing to chemical elements included in a slurry and mechanically removes the chemically reacted layer using abrasive particles. Sapphire is known as a material that requires considerable time to remove materials through CMP owing to its high hardness and chemical stability. This study introduces a technology using electrolytic ionization and ultraviolet (UV) light in sapphire CMP and compares it with the existing CMP method from the perspective of the material removal rate (MRR). The technology proposed in the study experimentally confirms that the MRR of sapphire CMP can be increased by approximately 29.9, which is judged as a result of the generation of hydroxyl radicals (·OH) in the slurry. In the future, studies from various perspectives, such as the material removal mechanism and surface chemical reaction analysis of CMP technology using electrolytic ionization and UV, are required, and a tribological approach is also required to understand the mechanical removal of chemically reacted layers.

• The Journal of Bigdata
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• v.4 no.2
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• pp.61-71
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• 2019

Chemical Mechanical Planarization (CMP) process that planarizes semiconductor wafer's surface by polishing is difficult to manage reliably since it is under various chemicals and physical machinery. In CMP process, Material Removal Rate (MRR) is often used for a quality indicator, and it is important to predict MRR in managing CMP process stably. In this study, we introduce prediction models using machine learning techniques of analyzing time-series sensor data collected in CMP process, and the classification models that are used to interpret process quality conditions. In addition, we find meaningful variables affecting process quality and explain process variables' conditions to keep process quality high by analyzing classification result.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.19 no.2
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• pp.184-190
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• 2010

Recently, the polishing process using magnetorheological fluids(MR fluids) has been focused as a new ultra-precision polishing technology for micro and optical parts such as aspheric lenses, etc. This method uses MR fluid as a polishing media which contains required micro abrasives. In the MR polishing process, the surface roughness and material removal rate of a workpiece are affected by the process parameters, such as the properties of used nonmagnetic abrasives(particle material, size, aspect ratio and density, etc.), rotating wheel speed, imposed magnetic flux density and feed rate, etc. The objective of this research is to predict MRR according to the polishing conditions based on the multiple regression analysis. Three polishing parameters such as wheel speed, feed rates and current value were optimized. For experimental works, an orthogonal array L27(313) was used based on DOE(Design of Experiments), and ANOVA(Analysis of Variance) was carried out. Finally, it was possible to recognize that the sequence of the factors affecting MRR correspond to feed rate, current and wheel speed, and to determine a combination of optimal polishing conditions.