• Journal of Power Electronics
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• v.18 no.4
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• pp.1255-1267
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• 2018

Parasitic parameters have a larger influence on Silicon Carbide (SiC) devices with an increase of the switching frequency. This limits full utilization of the performance advantages of the low switching losses in high frequency applications. By combining a theoretical analysis with a experimental parametric study, a mathematic model considering the parasitic inductance and parasitic capacitance is developed for the basic switching circuit of a SiC MOSFET. The main factors affecting the switching characteristics are explored. Moreover, a fast-switching double pulse test platform is built to measure the individual influences of each parasitic parameters on the switching characteristics. In addition, guidelines are revealed through experimental results. Due to the limits of the practical layout in the high-speed switching circuits of SiC devices, the matching relations are developed and an optimized layout design method for the parasitic inductance is proposed under a constant length of the switching loop. The design criteria are concluded based on the impact of the parasitic parameters. This provides guidelines for layout design considerations of SiC-based high-speed switching circuits.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.3 no.1
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• pp.24-30
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• 2010

In this paper, a novel electrically small monopole type resonant antenna is proposed. The very short length monopole (${\iota}{\approx}{\lambda}_g/15$ ) acts as a capacitive element and the slot on the ground structure acts as an inductive element, hence the combined system with these two elements thus form an LC resonator. The equivalent circuit model of the antenna structure was used to analysis and qualify the design correctness. Although the proposed antenna has very small size, it shows good performances. The measured maximum gain and radiation efficiency of the fabricated antenna at the frequency of 2.1 GHz was 3.6 dBi and 77.8 %, respectively.

• Journal of Advanced Navigation Technology
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• v.17 no.2
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• pp.177-182
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• 2013

In this paper, printed antenna which can be applied to a built-in wireless module of the security controller operating at global positioning system(GPS) L1 frequency band(1.575GHz) is proposed. The proposed antenna is basically composed of a microstrip patch antenna with inserting feed. In particular left and right slots which are respectively asymmetric are used for impedance matching, whereas slot with one open-end and shorting point are used on the bottom plane to set operating frequency and enhance bandwidth. It is observed at the desired GPS L1 frequency band that the radiation efficiency and gain of the proposed antenna are 90% and more than 4.8dBi respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.1 s.92
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• pp.40-48
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• 2005

In this paper, we explore the inductively coupled concept and propose a class of electrically small planar antennas. The antennas are optimized using NEC in conjunction with a Pareto GA. These antennas show good efficiency and bandwidth performance without any additional matching network. Several optimized designs are fabricated and measured. We explain the operating principle of these antennas using a simple lumped element circuit model. The proposed antennas are translated as printed lines on Duroid for RFID tag antennas.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.233-236
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• 1989

This paper deals with the expert system using network configuration and input information composed of protective relays and tripped circuit breakers. This system has knowlegebase independent on network dimension because network representation consists of the type of the matrix. Therefore, the knowlege of network representation is simplified, the space of knowlege is reduced, the addition of facts to the knowlege is easy and the expansion of facts is possible. In this paper, the network representation is defined to system matrix. This expert system based on the system matrix diagnoses normal, abnormal operations of protective devices as well as possible fault sections. The brach and bound search technique is used: breadth first technique mixed with depth first technique of primitive PROLOG search technique. This system will be used for real time operations. This expert system obtaines the solution using the pattern matching in working memory without no listing approach for rule control. This paper is written in PROLOG, the A.I. language.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.6
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• pp.489-493
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• 1999

In this paper, an analysis of microstrip-slotline transition is performed using a 3D vector Finite Element Method(FEM). Artificial anistropic absorber technique is employed to implement an matching boundary condition in FEM. On the base of the analysis, power divider/combiner is designed. The structure of the power combiner already developed are Branch-line coupler, Rat-race coupler, Wilkinson coupler, Lange coupler, etc. Which are all planar, If the frequency goes up, the coupling efficiency of these planar couplers is decreased on account of skin loss. Especially, in millimeter-wave band, the efficiency of more than two ways combiner is radically reduced, so that application in power amplifier circuit is almost impossible, Microstrip-slotline transition structure is a power combining technique integrated into wave-guide, so that the loss is small and the efficiency is high. Theoretically, we can mount several transistors into the power-combiner. This makes it possible to develop a high power amplifier. The numerically calculated performances of the device that is, we believe, the best are compared to the experimental results in Ka-Band(26.5GHz-40GHz).

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.47 no.2
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• pp.80-85
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• 2010

In this paper, the efficiency of power amplifier has been maximized by the application of EER structure, and the linearity has been improved by using metamaterial structure. This paper has proposed a design of power amplifier in class-F to get the PAE, and to control dynamic power using envelope detector. CRLH structure gets high-linearity by removing harmonics arisen from the mismatching of matching circuit. The PAE and the 3rd order IMD have been improved 5.93 %, 12.83 dB compared with those of conventional Class-F amplifier, respectively.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.1137-1140
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• 2002

A V-band low-noise amplifiers (LNA) based on the Millimeter-wave monolithic integrated circuit (MIMIC) technology were fabricated using high performance 0.1 $\mu\textrm{m}$ $\Gamma$-shaped pseudomorphic high electron mobility transistors (PHEMT＇s), coplanar waveguide (CPW) structures and the integrated process for passive and active devices. The low-noise designs resulted in a two-stage MIMIC LNA with a high S$\sub$21/ gain of 14.9 dB and a good matching at 60 ㎓. 20 dBm of IP3 and 3.9 dB of minimum noise figure were also obtained from the LNA. The 2-stage LNA was designed in a chip size of 2.3 ${\times}$1.4 mm$^2$by using 70 $\mu\textrm{m}$ ${\times}$2 PHEMT’s. These results demonstrate that a good low-noise performance and simultaneously with a high gain performance is achievable with GaAs PHEMT's in the 60 ㎓ band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.7 no.1
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• pp.43-52
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• 1996

Nonreciprocal twin-toroid ferrite phase shifter is designed, fabricated, and tested. ABCD matrix method is used to design the phase shifter and to compute its optimum dimen- sions. Quarter-wave two-section impedance matching transformers are utilized in order to match the impedance of the empty guide to that of the ferrite-loaded guide. Driving circuit controls the current needed to drive the phase shifter. Measured insertion loss and VSWR characteristics within the operaring band(9.1GHz ~ 9.5GHz) are less than 1.2dB and 1.15, respectively. After temperature compensation technique is appied to the phase shifter, the measured phase error of the phase shifter is less than $\pm4$ between $-10^{\circ}C\;and\;+60^{\circ}C$.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.10 no.5
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• pp.71-78
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• 2011

In this paper, we describe the design and implementation of a high efficiency and broad-band Class-J mode power amplifier using gallium nitride(GaN) high-electron mobility transistor(HEMT). The matching circuit of proposed class-J mode power amplifier for 2nd harmonic impedance designed to provide pure reactance alone. The measurement results show that output power of $40{\pm}1$ dBm, power-added efficiency of 50%, and drain efficiency of 60% for a continuous wave signal at 1.4 to 2.6 GHz.