• 전기화학회지
• /
• 제3권2호
• /
• pp.115-120
• /
• 2000

양극 물질로 산화바나듐 박막, 고체전해질로는 LiPON 박막 그리고 음극 물질로는 리튬 금속 박막을 선택하여 $Li/LiPON/V_2O_5/Pt$ 구조의 전고상 박막 전지를 제작하였고 전지 특성을 평가하였다. 산화바나듐 박막은 여러 산소 분압에서 직류 반응성 스퍼터링으로 증착하여 전기화학적 특성을 분석한 결과 $20\%\;O_2/Ar$비에서 가장 우수한 가역 특성을 나타내었다. 직류 반응성 스퍼터링에 의해 산화바나듐 박막을 제작한 후 진공을 그대로 유지한 상태에서 r.f. 반응성 스퍼터링에 의해 LiPON 고체전해질 박막을 증착하였다. 그 후 dry room내에서 진공 열증착법에 의해 리튬 금속 박막을 증착하여 전고상의 박막 전지를 제작하였다. $Li/LiPON/V_2O_5$ 박막 전지를 전압 범위와 전류 밀도를 변화시켜 충방전 시험을 행한 결과 $7{\mu}A/cm^2$의 전류 밀도와 3.6-2.7 V의 전압범위에서 가장 우수한 가역 특성을 나타내었다. $Li/LiPON/V_2O_5$박막 전지로 초시계를 구동 시켰으며 이는 in-situ공정에 의해 제작된 박막 전지가 소자 에너지원으로의 응용 가능성을 보여 주었다.

• 한국자기학회지
• /
• 제6권3호
• /
• pp.151-157
• /
• 1996

반응가스의 분압과 압력비($P_{CH4}/P_{CH4}+P_{N2}$)가 FeTaNC 박막의 연자기특성에 미치는 영향을 조사하였다. 반응가스분압 5%에서 가장 우수한 연자기특성을 나타내었는데 포화자속밀도는 $N_{2}$ 가스와 $CH_{4}$ 가스가 혼합($P_{CH4}$ : 20%~100%)된 조성에서 15~17 kG의 높은 값을 나타내었으며 보자력과 투자율(5 MHz)도 각각 0.3~0.5 Oe, 2000~4000의 값을 나타내었다. 또한, 반응가스분압 10%에서도 $P_{CH4}$이 30%에서 100%로 조성이 변함에 따라 포화자속밀도 15 kG, 보자력 0.18~0.4 Oe, 투자율(5 MHz) 2000~4000의 우수한 연자기 특성을 얻을 수 있었다. 반응가스분압 15%에서 포화자속밀도는 15 kG 정도로 일정하였으나 보자력과 투자율 (5 MHz)은 ($P_{CH4}/P_{CH4}+P_{N2}$) < 0.5 구간에서 보자력 > 0.5 Oe, 투자율(5 MHz) < 1000,($P_{CH4}/P_{CH4}+P_{N2}$) > 0.5 구간에서 보자력 < 0.5 Oe, 투자율(5 MHz) > 1000을 나타내었다. 반면 반응가스분압 20%에서는 과다한 반응가스 첨가에 의해 높은 보자력과 낮은 투자율을 나타내어 연자기특성을 얻을 수 없었다. 따라서 Ta 8%의 조성에서 반응가스분압이 20%에서 5%로 감소할수록 연자기특성이 크게 향상된 것으로 고찰되었다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2001년도 추계학술대회 논문집 전기물성,응용부문
• /
• pp.23-25
• /
• 2001

In this work, the $Ta_2O_5$ thin films were deposited on Pt/n-Si substrate by reactive magnetron sputtering and the RTA treatment at temperatures range from 650 to $750^{\circ}C$ in $O_2$ and vacuum. X-ray diffraction analysis, FE SEM, dielectric properties and leakage current density have been used to study the structural and electrical properties of the $Ta_2O_5$ thin films. XRD result showed that as- deposited films were amorphous and the annealed films crystallized (<$700^{\circ}C$) into ${\beta}-Ta_2O_5$. The crystallinity increased with temperature in terms of an increase in the intensity of the diffracted peaks(${\beta}-Ta_2O_5$) and annealing in oxygen reduced defect dang1ing Ta-O bonds. As deposited $Ta_2O_5$ films show the leakage current density $10^{-7}$ to $10^{-8}$ (A/$cm^2)$ at low electric fields (<200 kV/cm) However, it was found leakage current density of $Ta_2O_5$ thin films decreased with $O_2$ ambient annealing. The dielectric constant of the as deposited $Ta_2O_5$ thin films was ${\varepsilon}_r$ $9{\sim}11$ but the dielectric constant was increased after RTA treatment in $O_2$ ambient more then in vacuum.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 추계학술대회 논문집
• /
• pp.112-112
• /
• 2009

In this study, the effect of a long post-deposition thermal annealing(600 and 1000 $^{\circ}C$) on the surface acoustic wave (SAW) properties of polycrystalline (poly) aluminum-nitride (AlN) thin films grown on a 3C-SiC buffer layer was investigates. The poly-AlN thin films with a (0002) preferred orientation were deposited on the substrates by using a pulsed reactive magnetron sputtering system. Experimental results show that the texture degree of AlN thin film was reduced along the increase in annealing temperature, which caused the decrease in the electromechanical coupling coefficient ($k^2$). The SAW velocity also was decreased slightly by the increase in root mean square (RMS) roughness over annealing temperature. However, the residual stress in films almost was not affect by thermal annealing process due to small lattice mismatch different and similar coefficient temperature expansion (CTE) between AlN and 3C-SiC. After the AlN film annealed at 1000 $^{\circ}C$, the insertion loss of an $IDT/AlN/3C-SiC/SiO_2/Si$ structure (-16.44 dB) was reduced by 8.79 dB in comparison with that of the as-deposited film (-25.23 dB). The improvement in the insertion loss of the film was fined according to the decrease in the grain size. The characteristics of AlN thin films were also evaluated using Fourier transform-infrared spectroscopy (FT-IR) spectra and X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM) images.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
• /
• pp.32-35
• /
• 2000

Oxide-nitride-oxide(ONO) structures were formed by sequential radio frequency reactive magnetron sputtering method. The chemical composition and structure of these films were studied by using of secondary ion mass spectroscopy(SIMS) and Auger electron spectroscopy(AES) SIMS and AES experiments show the existence of nitridation at the SiO$_2$/Si substrate. The electrical characteristics of ONO films were evaluated by I-V and high frequency C-V measurements When the ONO films were annealed at 90$0^{\circ}C$ for 30 sec in $N_2$ ambient, the breakdown voltage increased and flat-band voltage decreased under high electric field.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 하계학술대회 논문집
• /
• pp.235-235
• /
• 2009

This paper describes the influence of a polycrystalline (poly) 3C-SiC buffer layer on the surface acoustic wave (SAW) properties of poly aluminum nitride (AlN) thin films by comparing the center frequency, insertion loss, the electromechanical coupling coefficient ($k^2$), andthetemperaturecoefficientoffrequency(TCF) of an IDT/AlN/3C-SiC structure with those of an IDT/AlN/Si structure, The poly-AlN thin films with an (0002)-preferred orientation were deposited on a silicon (Si) substrate using a pulsed reactive magnetron sputtering system. Results show that the insertion loss (21.92 dB) and TCF (-18 ppm/$^{\circ}C$) of the IDT/AlN/3C-SiC structure were improved by a closely matched coefficient of thermal expansion (CTE) and small lattice mismatch (1 %) between the AlN and 3C-SiC. However, a drawback is that the $k^2(0.79%)$ and SAW velocity(5020m/s) of the AlN/3C-SiC SAW device were reduced by appearing in some non-(0002)AlN planes such as the (10 $\bar{1}$ 2) and (10 $\bar{1}$ 3) AlN planes in the AlN/SiC film. Although disadvantages were shown to exist, the use of the AlN/3C-SiC structure for SAW applications at high temperatures is possible. The characteristics of the AlN thin films were also evaluated using FT-IR spectra, XRD, and AFM images.

• 한국재료학회지
• /
• 제21권2호
• /
• pp.95-99
• /
• 2011

The microstructure and Cu diffusion barrier property of Ta-Si-N films for various Si and N compositions were studied. Ta-Si-N films of a wide range of compositions (Si: 0~30 at.%, N: 0~55 at.%) were deposited by DC magnetron reactive sputtering of Ta and Si targets. Deposition rates of Ta and Si films as a function of DC target current density for various $N_2/(Ar+N_2)$ flow rate ratios were investigated. The composition of Ta-Si-N films was examined by wavelength dispersive spectroscopy (WDS). The variation of the microstructure of Ta-Si-N films with Si and N composition was examined by X-ray diffraction (XRD). The degree of crystallinity of Ta-Si-N films decreased with increasing Si and N composition. The Cu diffusion barrier property of Ta-Si-N films with more than sixty compositions was investigated. The Cu(100 nm)/Ta-Si-N(30 nm)/Si structure was used to investigate the Cu diffusion barrier property of Ta-Si-N films. The microstructure of all Cu/Ta-Si-N/Si structures after heat treatment for 1 hour at various temperatures was examined by XRD. A contour map that shows the diffusion barrier failure temperature for Cu as a function of Si and N composition was completed. At Si compositions ranging from 0 to 15 at.%, the Cu diffusion barrier property was best when the composition ratio of Ta + Si and N was almost identical.

• 한국정보통신학회:학술대회논문집
• /
• 한국해양정보통신학회 2000년도 추계종합학술대회
• /
• pp.494-498
• /
• 2000

RuO$_2$ thin films are prepared by RF magnetron reactive sputtering and their characteristics of crystallization, microstructure, surface roughness and resistivity are studied with various $O_2$/ (Ar+O$_2$) ratios and substrate temperatures. As $O_2$/(Ar+O$_2$) ratio decreases and substrate temperature increases, the preferred growing plane of RuO$_2$ thin films are changed from (110) to (101) plane. With increase of the $O_2$/(Ar+O$_2$) ratio from 20% to 50%, the surface roughness and the resistivity of RuO$_2$ thin films increase from 2.38nm to 7.81 nm, and from 103.6 $\mu$$\Omega$-cm to 227 $\mu$$\Omega$-cm, respectively, but the deposition rate decreases from 47 nm/min to 17 nm/min. On the other hand, as the substrate temperature increases from room temperature to 500 $^{\circ}C$, resistivity decreases from 210.5 $\mu$$\Omega$-cm to 93.7 $\mu$$\Omega$-cm. RuO$_2$ thin film deposited at 300 $^{\circ}C$ shows a excellent surface roughness of 2.38 nm. As the annealing temperature increases in the range between 400 $^{\circ}C$ and 650 $^{\circ}C$, the resistivity decreases because of the improvement of crystallinity. We find that RuO$_2$ thin film deposited at 20% of $O_2$/(Ar+O$_2$) ratio and 300 t of substrate temperature shows excellent combination of surface smoothness and low resistivity so that it is well Qualified for bottom electrodes for ferroelectric thin films.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 반도체재료
• /
• pp.79-83
• /
• 2001

In order to compare the barrier properties of Ta-N/Si(001) with those of Ta-N/Ta/Si(001), we studied structural properties of films grown by RF magnetron sputtering with various $Ar/N_2$ ratios. To evaluate the barrier properties, the samples were annealed in a vacuum chamber. Ex-situ x-ray scattering measurements were done using an in-house x-ray system. With increasing nitrogen ratio in Ta-N/Si(001), the barrier property of Ta-N/Si(001) was enhanced, finally failed at $750^{\circ}C$ due to the crystallization and silicide formation. Compared with Ta-N/Si(001), Ta-N/Ta/Si(001) forms silicides at $650^{\circ}C$. However it does not crystallize even at $750^{\circ}C$. With increasing nitrogen composition in Ta-N/Ta/Si(001), the formation of tantalum silicide was reduced and the surface roughness was improved. To observe the surface morphology of Ta-N/Ta/Si(001) during annealing, we performed an in-situ x-ray scattering experiment using synchrotron radiation of the 5C2 at Pohang Light Source(PLS). Addition of Ta layer between Ta-N and Si(001) improved the surface morphology and reduced the surface degradation at high temperatures. In addition, increasing $N_2/Ar$ flow ratio reduced the formation of tantalum silicide and enhanced the barrier properties.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.275.2-275.2
• /
• 2014

현재 자동차 분야에서 차량 경량화의 한 수단으로 자동차용 유리를 고강도 투명 플라스틱 소재인 Polycarbonate(PC)로 대체하고자 하는 연구가 이루어지고 있다. 하지만, PC의 낮은 내마모 특성과 자외선에 의한 열화 및 변색 현상은 해결하여야 할 문제점으로 지적되고 있으며, 에너지 소비 저감을 위하여 적외선 영역 반사율(reflectance)이 높은 저방사(low emissivity) 특성이 요구되고 있다. 본 연구에서는, ICP-assisted reactive magnetron sputtering 장비를 이용하여 투과율(transmittance)이 확보되고, 고경도 특성을 갖는 Al-Si-N와 300 nm 파장 이하의 자외선 차단 특성이 있는 SiN:H 그리고 저방사 특성을 위해 Al을 증착하였고, 박막의 증착 순서는 SiN:H 박막을 가장 아래에 증착하고 그 위에 Al/Al-Si-N 박막을 다층으로 형성하였다. 박막의 chemical state와 crystallinity를 확인하기 위하여 XPS(X-ray Photoelectron Spectroscopy), XRD (X-ray Diffraction)를 이용하여 분석하였다. Knoop ${\mu}$-hardness tester와 Taber tester를 이용하여 경도 및 내마모 특성을 분석하였다. 제작된 샘플의 Al-Si-N 박막 경도는 Si 비율에 따라 다른 경도 특성을 갖는데, 실제 Si/(Al+Si) 비율이 24%에서 최대 31 GPa의 경도 값을 갖는 것을 확인하였다. UV-Vis Spectrometer를 이용하여 250 nm~700 nm 파장의 투과율을 측정하였고, 자외선 영역의 경우 SiN:H 박막에 의해 300 nm 이하의 파장에서 2% 이하의 투과율을 확인하였다. 그리고 FT-IR(Fourier Transform Infrared Spectroscopy)를 이용하여 $2.5{\mu}m{\sim}15{\mu}m$ 파장의 반사율을 이용하여 방사율을 측정하였는데, 3*(Al/Al-Si-N) 구조의 다층 박막의 경우 방사율은 0.27로 측정되었다.