• Proceedings of the Korean Magnestics Society Conference
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• 2010.06a
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• pp.79-79
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• 2010

Semimetallic bismuth (Bi) has been extensively investigated over the last decade since it exhibits very intriguing transport properties due to their highly anisotropic Fermi surface, low carrier concentration, long carrier mean free path l, and small effective carrier mass $m^*$. In particular, the great interest in Bi nanowires lies in the development of nanowire fabrication methods and the opportunity for exploring novel low-dimensional phenomena as well as practical application such as thermoelectricity[1]. In this work, we introduce a self-assembled interconnection of nanostructures produced by an on-film formation of nanowires (OFF-ON) method in order to form a highly ohmic Bi nanobridge. A Bi thin film was first deposited on a thermally oxidized Si (100) substrate at a rate of $40\;{\AA}/s$ by radio frequency (RF) sputtering at 300 K. The sputter system was kept in an ultra high vacuum (UHV) of $10^{-6}$ Torr before deposition, and sputtering was performed under an Ar gas pressure of 2m Torr for 180s. For the lateral growth of Bi nanowires, we sputtered a thin Cr (or $SiO_2$) layer on top of the Bi film. The Bi thin films were subsequently put into a custom-made vacuum furnace for thermal annealing to grow Bi nanowires by the OFF-ON method. After thermal annealing, the Bi nanowires cannot be pushed out from the topside of the Bi films due to the Cr (or $SiO_2$) layer. Instead, Bi nanowires grow laterally as a mean s of releasing the compressive stress. We fabricated a self-assembled Bi nanobridge (d=192 nm) device in-situ using OFF-ON through annealing at $250^{\circ}C$ for 10hours. From I-V measurements taken on the Bi nanobridge device, contacts to the nanobridge were found highly ohmic. The quality of the Bi nanobridge was also proved by the high MR of 123% obtained from transverse MR measurements. These results manifest the possibility of self-assembled nanowire interconnection between various nanostructures for a variety of applications and provide a simple device fabrication method to investigate transport properties on nanowires without complex patterning and etching processes.

• Journal of the Korean Vacuum Society
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• v.16 no.4
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• pp.262-266
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• 2007

Polycrystalline $Mn_xFe_{3-x}O_4$ thin films were synthesized on Si(100) substrates using sol-gel method and the effects of Mn substitution on the structural, magnetic, and magnetotransport properties were analyzed. X-ray diffraction revealed that cubic structure is maintained up to x = 1.78 with increasing lattice constant for increasing x. Such increase of the lattice constant is attributable to the substitution of $Mn^{2+}$ (with larger ionic radius) ions into tetrahedral $Fe^{3+}$(with smaller ionic radius) sites. VSM measurements revealed that $M_s$ does not vary significantly with x, qualitatively explainable by comparing spin magnetic moments of Mn and Fe ions. On the other hand, $H_c$ was found to decrease with increasing x, attributable to the decrease of magnetic anisotropy due to the decrease of $Fe^{2+}$ density through $Mn^{2+}$ substitution. Magnetoresistance (MR) of the $Mn_xFe_{3-x}O_4$ films was found to decrease with increasing x. Analysis of the MR data in comparison with the VSM results gives an indication of the tunneling of spin-polarized carriers through the grain boundaries of the polycrystalline samples at low external field and spin-flip of the carriers at high external field.

• Journal of the Korean Magnetics Society
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• v.10 no.1
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• pp.37-41
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• 2000

We investigated the magnetoresistance effect and the exchange coupling of antiferromagnetic Fe$_2$O$_3$ spin-valve film. The X-ray diffractions of the spin-valve films having a different thickness of a $\alpha$-Fe$_2$O$_3$ were measured. The exchange coupling field (H$_{ex}$) between Fe$_2$O$_3$ and pinned NiFe layer was increased from 13.5 Oe to 84.5 Oe, as the thickness of Fe$_2$O$_3$ increased from 400 $\AA$ to 800 $\AA$. The surface roughness of $\alpha$-Fe$_2$O$_3$spin-valves increased with the increase of $\alpha$-Fe$_2$O$_3$thickness. Therefore, the increase of H$_{ex}$ will be due to the increase of the interface roughness. The MR ratios as a function of Fe$_2$O$_3$ thickness was not changed. And H$_{ex}$ increased by the increment of magnetostatic coupling between Fe$_2$O$_3$ and NiFe (pinned-layer) due to the increment of interface roughness. H$_{ex}$ depends on the surface roughness, but the magnetoresistance ratio doesn't doesn't.

• Journal of the Korean Magnetics Society
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• v.16 no.5
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• pp.240-244
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• 2006

In this paper, magnetic properties and annealing behavior of spin valve structures using Mo(MoN) layers as underlayers were studied varying the thickness of the underlayers. The spin valve structure was consisted of Si substrate/$SiO_2(2,000{\AA})/Mo(MoN)(t{\AA})/NiFe(21\;{\AA})/CoFe(28\;{\AA})/Cu(22\;{\AA})/CoFe(18\;{\AA})/IrMn(65\;{\AA})/Ta(25\;{\AA})$. Also, MoN films were deposited on Si substrates and their thermal annealing behavior was analyzed. The resistivity of the MoN film increased as the $N_2$ gas flow rate was increased. After annealing at $600^{\circ}C$, XRD results did not show peaks of silicides. XPS results indicated MoN film deposited with 5 sccm of $N_2$ gas flow rate was more stable than the film deposited with 1 sccm of $N_2$ gas flow rate. The variations of MR ratio and magnetic exchange coupling fold were small for the spin valve structures using Mo(MoN) underlayers up to thickness of45 ${\AA}$. MR ratio of spin valves using MoN underlayers deposited with various $N_2$ gas flow rate was about 7.0% at RT and increased to about 7.5% after annealing at $220^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased to about 3.5%. Variation of $N_2$ gas flow rate up to 5 sccm did not change the MR ratio and $H_{ex}$ appreciably.

• Journal of the Korean Magnetics Society
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• v.12 no.6
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• pp.231-234
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• 2002

Magnetic properties are investigated for top- and bottom-type spin valves of Si/SiO$_2$/NiO(60nm)/Co(2.5nm)/Cu(1.95nm)/Co(4.5nm)/NOL(t nm; Nano Oxide layer). The MR ratios of the bottom-type spin valves with NOL are larger than those of the top-type spin valves. However, the enhancement of the former is lower than the latter. Both of spin-valves also showed almost constant Ap and smaller p. Enhanced MR ratios of spin valves with NOL result mainly from small values of with constant Ap which due to specular diffusive electron scattering at NOL(NiO)/metal interfaces.

• Journal of the Korean Ceramic Society
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• v.39 no.3
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• pp.294-298
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• 2002

Polycrystalline $La_{2.1}Sr_{1.9}Mn_3O_{10}$ with layered perovskite structure have been successfully synthesized and investigated with respect to their thermoelectric, electric and magnetic properties. The large magnetoresistance (MR) effect with $-{\Delta}{\rho}/{\rho}_0$ of ∼120% at 0.85T was observed in a wide temperature range below a cusp temperature in resistivity of about 120K, which is well below the magnetic $T_C$. At high temperature, a singnificant difference between the activation energy deduced from the electrical resistivity and thermoelectric power, a characteristic of small polaron, is observed. All of the experimental data can be well explained on the basis of the small polaron model.

• Korean Journal of Materials Research
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• v.12 no.3
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• pp.200-204
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• 2002

We fabricated TMR devices which have double oxidized tunnel barrier using plasma oxidation method to form homogeneously oxidized AlO tunnel barrier. We sputtered 10 $\AA$-bottom Al layer and oxidized it by varying oxidation time for 5, 10, 20 sec. Subsequent sputtering of 13 $\AA$ - Al was performed and the matallic layer was oxidized for 120 sec. The electrical resistance changed from 700$\Omega$ to 2700$\Omega$ with increase of oxidation time, while variation of MR ratio was little spreading 27~31% which is larger than that of TMR device of ordinary single tunnel barrier. We calculated effective barrier height and width by measuring I-V curves, from which we found the barrier height was 1.3~1.5 eV, sufficient for tunnel barrier, and the barrier width(<16.2 $\AA$) was smaller than that of directly measured value by the tunneling electron microscopy. Our results may be caused by insufficient oxidation of Al precursor into $Al_2O_3$. However, double oxidized tunnel barriers were superior to conventional single tunnel barrier in uniformity and density. We found that the external magnetic field to switch spin direction of ferromagnetic layer of pinned layer breaking ferro-antiferro exchange coupling was increased as bottom layer oxidation time increased. Our results imply that we were able to improve MR ratio and tune switching field by employing double oxidized tunnel barrier process.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.40 no.2
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• pp.349-354
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• 2015

This paper is about utilizing magnetic sensor to measure magnetic signal and analyze the form of magnetic signal for vehicle detection. For magnetic sensor, MR sensor from Honeywell company was used, and Helmholtz coil of which 3 axis' length is 1.2 m was manufactured to check the capability of the sensor and estimate its ability to detect the magnetic field. Vehicle detection was performed in following steps: installing sensor in road lane and non-road lane; estimating magnetic field when the vehicle is run by the driver; and estimating magnetic field of 7 different vehicles with different sizes. Also, sensor was installed at SUV and small-sized vehicle's park and non-park area to analyze the form of magnetic field. Lastly, the form of magnetic field made by different parts of the vehicle was analyzed. Based on the analysis, the form of magnetic field's magnetic peak value was bigger for road lane than non-road lane, complicated form was useful to distinguish the road lane above the installed sensor and the location of the running car, and the types of vehicle could be sorted because the variance of the magnetic field was bigger for bigger size of the vehicle. Also, it was confirmed that the forms of vehicle in parts-by-parts estimates.

• Journal of Magnetics
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• v.9 no.1
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• pp.13-16
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• 2004

Magnetic tunnel junctions (MTJs) comprising amorphous CoNbZr layers have been investigated. $Co_{85.5}Nb_8Zr_{6.5}$(in at. %) layers were employed to substitute the traditionally used Ta layers with an emphasis given on under-standing underlayer effect. The typical junction structure was $SiO_2/CoNbZr$ or Ta 2/CoFe 8/IrMn 7.5/CoFe 3/Al 1.6 + oxidation/CoFe 3/CoNbZr or Ta 2 (nm). For both as-deposited state and after annealing, the CoNbZr-underlayered structure showed superior surface smoothness up to the tunnel barrier than Ta-underlayerd one (rms roughness of 0.16 vs. 0.34 nm). CoNbZr-based MTJs was proven beneficial for increasing thermal stability and increasing $V_h$ (the bias voltage where MR ratio becomes half) characteristics than Ta-based MTJs. This is because the CoNbZr-based junctions offer smoother interface structure than the Ta-based one.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.06a
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• pp.21-21
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• 2003

Microstructure and magnetic transport phenomina in rf sputtered AlN/Co type ten-layered discontinuous films of nanoscaled [AlN (3 nm)/Co (t nm)]...$\sub$10/ with t$\sub$Co/=1.0∼2.0 nm have been investigated. The microstructure and tunneling magnetic resistance of the samples are strongly dependent on the thickness of Co layer. Negative tunneling magneto-resistance due to the spin-dependent transport has been observed along the current-in-plane configuration in the samples having the Co layers below 1.6 nm thick. When the thickness of Co layer was less than 1,2 nm, randomly oriented granular Co particles were completely isolated and embedded in amorphous AlN matrix, and the films showed the superparamagnetic behavior with a high MR value of Δ$\rho$/$\rho$$\sub$0/=1.8 %. As t$\sub$Co/ increases, a transition from the regime of co-existence of superparamagnetic and ferromagnetic behaviors to ferromagnetic behavior was observed. Tunneling barrier called "decay length for tunneling" for the films having the thickness of Co layer from 1.4 to 1.6 nm was measured to be ranged from 0.004 to 0.021 ${\AA}$$\^$-1/.