• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.550-552
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• 2003

We prepared $Co_{77}Cr_{20}Ta_3$ Magnetic layer for perpendicular magnetic recording media with introduce Two-step methode and Amorphous Si Underlayer on slide glass substrate. The thickness of magnetic layer were 100nm, and Underlayer were varied from 5 to 100 nm. The multi layer Properties of crystal structure were examined with XRD. Prepared thin films showed improvement of dispersion angle of c-axis orientation ${\Delta}{\theta}_{50}$ caused by inserting Buffer-layer and amorphous Si underlayer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.8
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• pp.681-687
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• 2000

Magnetic Characteristics of an InSb hall device of multilayered structures were investigated. For the measurement of electrical properties of the hall device InSb thin films fabricated with series and parallel multilayers wee evaporated. Hall coefficient hall mobility carrier density and hall voltage were measured as a function of the intensity of magnetic field. We found that the XRD analysis of InSb thin film showed good properties at 20$0^{\circ}C$ 60 minutes. Resistance of ohmic contact was increased linearly due to increasing current. Hall voltages at 0.01 T showed 5$\times$10$^{-4}$ [V] and $1.5\times$10$^{-3}$ [V]. Some of device fabrication technique and analysis of magnetic characteristics were discussed.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.214-215
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• 2002

High saturation magnetization (B$\_$s/) and excellent high frequency characteristics of magnetic thin films has been recognized as the most important requirement for further miniaturization and higher frequency operation in magnetic devices, such as magnetic heads and magnetic sensors. Up to now, Fe-X-N (X =Ti, Hf, and Al etc.) films with B$\_$s/ of 15 ∼ 19 kG and coercivity (H$\_$c/) of 0.5 ∼ 5.0 Oe have been successfully fabricated and proven to satisfy various requirements as a potential candidate for thin film head materials. (omitted)

• Journal of Magnetics
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• v.11 no.2
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• pp.74-76
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• 2006

Dynamic behaviors of transverse domain walls (TDWs) in rectangular shaped thin-film magnetic nanowires with different widths under applied magnetic fields less than the Walker field were studied by micromagnetic simulations. It was found that the velocity of stable TDWs in the viscous region increases from 147 to 419 m/s and their mass decreases from $6.24{\times}10^{-23}\;to\;2.70{\times}10^{-23}kg$ with increasing strength of the applied magnetic field ranging from 5 to 20 Oe for the nanowire with a dimension of 10 nm in thickness and $5{\mu}m$ in length, and 50 nm in width. With increasing the width of nanowires from 50 to 125 nm at a specific field strength of 5 Oe, the TDW's velocity also increases from 147 to 246 m/s and its mass decreases from $6.24{\times}10^{-23}\;to\;5.91{\times}10^{-23}kg$.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.60-60
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• 2011

Giant magnetoresistance (GMR), tunneling magnetoresistance (TMR), and magnetic random-access memory (MRAM) are currently active research areas in spintronics. The high magnetoresistance and the high spin polarization (P) of electrons in the ferromagnetic electrodes of tunnel junction or intermediate layers are required. Magnetite, Fe3O4, is predicted to possess as half-metallic nature, P ~ 100% spin polarization, and has a high Curie temperature (TC~850 K). Experiments demonstrated that the P~($80{\pm}5$)%, ~($60{\pm}5$)%, and ~40-55% for epitaxial (111), (110) and (001)-oriented Fe3O4 thin films, respectively. Epitaxial Fe3O4 films may enable us to investigate the effects of half metals on the spin transport without grain-boundary scattering.In addition, it has been reported that the Verwey transition (TV, a first order metal-insulator transition) of 120 K in bulk Fe3O4 is strongly affected by many parameters such as stoichiometry and stress, etc. Here we report that the growth modes, magnetism and transport properties of Fe3O4 thin films were strongly dependent on the oxygen pressure during film growth. The average roughness decreases from 1.021 to 0.263 nm for the oxygen pressure increase from $2.3{\times}10-7$ to $8.2{\times}10^{-6}$ Torr, respectively. The 120 K Verwey transition in Fe3O4 was disappeared for the sample grown under high oxygen pressure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.883-887
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• 2006

In order to attain high-rate deposition of Mn-Zn ferrite thin film for soft magnetic underlayer in perpendicular magnetic recording media, a reactive sputtering using powder-metal targets under the mixture gas of Ar and $O_{2}$ was performed. It was succeeded that Mn-Zn ferrite films with (111) crystal orientation were deposited on Pt(111) underlayer without any annealing process. The film revealed 3.4 kG of 4 ${\pi}Ms$, 70 Oe of coercivity. The deposition rate of the new method was 16 times as high as that of the conventional method using ferrite target.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.200-201
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• 2002

Recently, a countermeasure for the electromagnetic noise emission on RF integrated transmission line using the loss generation of ferromagnetic thin films is briefly suggested$\^$1,2/. Without the magnetic film, the noise harmonics of the signal pass through the transmission line with only a little attenuation. The ideal role of magnetic film is not to raise insertion losses in the pass-band and to give as large attenuation as possible to eliminate the noise harmonics at the stop-band, the frequency range higher than the meaningful signal as shown in Fig. 1. and Fig. 2. (omitted)

• Journal of the Korean Magnetics Society
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• v.21 no.3
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• pp.93-98
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• 2011

We successfully grew $La_{0.35}Pr_{0.35}Ca_{0.3}MnO_3$(LPCMO)/$LaAlO_3$(LAO) thin film using Laser Molecular-Beam Epitaxy and studied post-growth annealing effects ($750^{\circ}C$, 5 h) on its crystal structural and magnetic properties. Whereas the single-layered LPCMO and LPCMO/STO superlattice thin films show rough surface before and after the post-growth annealing, LPCMO/LAO superlattice shows a relatively very flat surface even after the post-growth annealing. The enhancement of ferromagnetism of LPCMO/LAO superlattice after the post-growth annealing was remarkable compared to the single-layered LPCMO thin film. The coercive and saturation magnetic field of the single-layed LPCMO thin film were decreased after the post-annealing. However, for LPCMO/LAO superlattice, a same coercive and increased saturation magnetic field were exhibited after post-growth annealing. We suggest that these peculiar observations are originate from the super-structure of LPCMO and LAO.

• Journal of Korean Ophthalmic Optics Society
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• v.12 no.2
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• pp.13-17
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• 2007

Magnetoresistance(MR) in ferromagnetic thin film to make thermal evaporating method in various angle configurations were observed. The degree of transition from positive magnetoresistance to negative magnetoresistance is observed to 34 degree in anisotropy magnetoresistance experiment. In the angle configuration such that the film sample was placed perpendicular to the magnetic field, the difference of FDMP and degree of transition in iron and nickel films is observed due to the fundamental difference of magnetic easy axis.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.8
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• pp.14-18
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• 2018

Generally. the Ohmic's law is an important factor to increase the conductivity in a micro device. So it is also known that the Ohmic contact in a semiconductor device is import. The PN junction as a structure of semiconductor involves the depletion layer, and this depletion layer induces the non linear electrical properties and also makes the Schottky contact as an intrinsic characteristics of semiconductor. To research the conduction effect of insulators in the semiconductor device, $SiO_2$ thin film and $V_2O_5/SiO_2$ thin film were researched by using the current-voltage system. In the nano electro-magnetic system, the $SiO_2$ thin film as a insulator had the non linear Schottky contact, and the as deposited $V_2O_5$ thin film had the linear Ohmic contact owing to the $SiO_2$ thin film with superior insulator's properties, which decreases the leakage current. In the positive voltage, the capacitance of $SiO_2$ thin film was very low, but that of $V_2O_5$ thin film increased with increasing the voltage. In the normal electric field system, it was confirmed that the conductivity of $V_2O_5$ thin film was increased by the effect of $SiO_2$ thin film. It was confirmed that the Schottky contact of semiconductors enhanced the performance of electrical properties to increased the conductivity.