• 한국재료학회:학술대회논문집
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• 한국재료학회 1999년도 춘계학술발표강연 및 눈문개요집
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• pp.97-97
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• 1999

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.13-16
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• 2000

In this study, we have fabricated nonequilibrium $Fe_{85.6}Zr_{3.3}B_{5.7}Ag_{5.4}$ thin film, which contains an additional insoluble element Ag, by using DC magnetron sputtering method. We have investigated the magnetic properties of amorphous $Fe_{85.6}Zr_{3.3}B_{5.7}Ag_{5.4}$ thin film as a function of rotational field annealing(RFA). After deposition, the amorphous $Fe_{85.6}Zr_{3.3}B_{5.7}Ag_{5.4}$ thin film annealed by rotational field annealing method at $350^{\circ}C$ for an hour was founded to have high permeability of 8680 of 100 MHz, 0.2 mOe, low coercivity of 0.86 De and very low core loss of 1.3 W/cc at 1 MHz, 0.1T.

• Journal of Magnetics
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• 제6권4호
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• pp.129-131
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• 2001

In order to investigate the effect of the interface on GMR, [NiFe(25 ${\AA}$)/Cu(24${\AA}$)]$_2$/Si thin film was epitaxially grown on HF-treated Si (001) substrate using a DC magnetron sputtering method. Typical GMR effects could be observed in epitaxial film with a weak antiferromagnetic exchange coupling while non epitaxial film showed unsaturated and broad MR curves probably due to inter-diffusion between NiFe and Cu layers. Ferromagnetic resonance (FMR) experiment showed two distinct absorption peaks in all films. Each peak was revealed to come from each NiFe layer with different magnetic property. In FMR measurement very clear interface in epitaxial films could be confirmed by a lower value of line width (ΔH) and higher M$\sub$s/ of epitaxial film than those of non epitaxial films, respectively.

• 한국자기학회지
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• 제15권1호
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• pp.17-20
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• 2005

RF magnetron sputtering 법으로 Co-Fe-Al-O계 박막을 상온에서 제작하여 산소분압에 따른 포화자화, 보자력, 이방성자계, 고주파에서의 투자율(1 GHz)을 조사하였다. 최적조건인 4%의 산소분압에서 제조한 $Co_{69.9}Fe_{20.5}A_{14.4O_{5.2}$ 박막은 포화자속밀도 18.1kG, 보자력 0.82 Oe, 이방성자계 24 Oe, 실효 투자율(1 GHz) 1,024의 우수한 연자성을 나타내었다. Co-Fe-Al-OrP 박막의 전기비저항은 산소분압이 560.7 ${\mu}{\omega}cm$ 이었다. 따라서 약 560.7${\mu}{\omega}cm$의 높은 전기바저항과 24 Oe의 높은 이방성 자계 때문에 $Co_{69.9}Fe_{20.5}A_{14.4O_{5.2}$ 박막이 고주파에서 우수한 연자기적 성질을 가지는 것으로 판단된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.81-84
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• 2004

The NiCr is an important material for present thin-film resistor application owing to its low TCR and thermal stability. In this work, the NiCr thin films were deposited on coming glass substrate by reactive magnetron sputtering and the annealing at temperatures range from 300 to $500^{\circ}C$ for 20 min in vacuum. X-ray, AFM, $R_s$(surface leakage current) have been used to study the structural and electrical properties of the NiCr thin films. The high precision NiCr thin films resistor with TCR(temperature coefficient of resistance) of less then $10\;ppm/^{\circ}C$ was obtained under in in-situ annealing at $300^{\circ}C$ on Cr buffer layer substrate. It is clear that the NiCr thin-films resistor electrical properties are low TCR related with it's annealing and buffer layer condition. NiCr thin film resistor having a good thermal stability and low TCR properties are expected for the application to the dielectric material of passive component.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.41-41
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• 1998

Rare earth metal films have been used as a buffer layer for growing ferroelectric t thin film or a seed layer for magnetic multilayer. But when it was deposited on s semiconductor substrates for the application of magneto-optic (MO) storage media, it i is difficult to exactly measure magnetic cons떠nts due to shunting current, and so it n needs to grow metal films on insulator substrate to reduce such effect. Recently, it w was reported that ultra-thin Pt layer were epitaxially grown on A12O:J by ion beam s sputtering in 비떠 high vacuum and it can be used as a seed layer for the growth of C Co-contained magnetic multilayer. In this stu$\phi$, Pt thin film were epi떠xially grown on AI2D3 ($\alpha$)OJ) by RF magnetron s sputtering. The crystalline structure was analyzed by transmission electron microscope ( (TEM) and Rutherford Back Scattering (RBS)/Ion Channeling. In TEM study, Pt was b believed to be twinned on AI잉3($\alpha$)01) su$\pi$ace about Pt(ll1) plane.Moreover, RBS c channeling spectra showed that minimum scattering yield of Pt(111)/AI2O:J(1$\alpha$)OJ) was 4 4% and Pt(11J)/AI2D3($\alpha$)OJ) had 3-fold symmetry.

• 한국자기학회지
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• 제19권4호
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• pp.147-151
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• 2009

전도성 저항특성이 우수한 비정질 CoFeHfO재료의 자화곡선 및 토오크 측정으로부터 포화자화량 및 일축이방성상수를 도출하였으며, 이들 결과를 Landau-Lifshitz-Gilbert(LLG) 이론에 적용하여 마이크로파대역의 복소투자율 특성을 분석하였다. LLG 분석 결과 CoFeHfO 박막 재료의 감쇠상수(damping factor)는 ${\alpha}$ = 0.014로 매우 작은 값을 보였다. 이는 CoFeHfO 재료 내에 존재하는 다양한 자성상(magnetic phase)들 중 감쇠상수가 현저히 작은 자성상들에 의하여 유발되었음을 자기장의 세기에 따른 FMR(ferromagnetic resonance) 신호의 선폭 분석을 통하여 알 수 있었다.

• 한국전기전자재료학회논문지
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• 제21권9호
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• pp.818-824
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• 2008

The Separated Pulsed Laser Deposition (SPLD) technique uses two chambers that are separated by a conic metallic wall with a central orifice. The pressures of ablation chamber and deposition chamber were controlled by the differential vacuum system. We deposited zinc oxide (ZnO) thin films by SPLD method to obtain high quality thin films. When the bias voltage of +500 V was applied between a substrate and an orifice, the ZnO thin film was deposited efficiently. The deposited ZnO thin film at ablation chamber gas pressure of Ar 5 mTorr showed the sharpest ultraviolet absorption edge indicatory the band gap of about 3.1 eV. ZnO thin films were deposited using effect of electric and magnetic fields in the SPLD method. E${\times}$B drift happened by an electric fields and a magnetic fields, activated plasma plume, as a result the film surface became very smooth. When the bias voltage of +500 V and magnet of 0,1 T were applied the ZnO thin films surface state showed high quality. Grain size was 41.99 nm and RMS was 0.84 nm.

• 한국자기학회지
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• 제16권4호
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• pp.197-200
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• 2006

RF magnetron reactive sputtering법으로 CoFeHfO 박막을 상온에서 제작하여 산소분압에 따른 포화자화, 보자력, 이방성자계를 조사하였다. 최적조건인 산소분압 8%에서 제조한 $Co_{39}Fe_{34}Hf_{9.5}O_{17.5}$ 박막은 포자자속밀도($4{\pi}M_s$) 19kG, 보자력($H_c$) 0.37Oe, 이방성자계($H_k$) 48.62Oe의 우수한 연자성을 나타내었다. CoFeHfO 박막의 전기비저항은 산소분압이 늘어남에 따라 증가하는 경향을 나타내었으며 우수한 연자기적 성질을 가지는 $Co_{39}Fe_{34}Hf_{9.5}O_{17.5}$ 박막의 경우, 300 ${\mu}{\Omega}cm$의 높은 전기비저항과 48.62 Oe의 높은 이방성자계 때문에 $Co_{39}Fe_{34}Hf_{9.5}O_{17.5}$박막이 고주파에서 우수한 연자기 특성을 가지는 것으로 사료된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2007년도 제32회 학술대회 초록집
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• pp.172-172
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• 2007