• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.167-167
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• 2011

Magnetic random access memory (MRAM) is one of the prospective semiconductor memories for next generation. It has the excellent features including nonvolatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack is composed of various magnetic materials, metals, and a tunneling barrier layer. For the successful realization of high density MRAM, the etching process of magnetic materials should be developed. Among various magnetic materials, FePt has been used for pinned layer of MTJ stack. The previous etch study of FePt magnetic thin films was carried out using $CH_4/O_2/NH_3$. It reported only the etch characteristics with respect to the variation of RF bias powers. In this study, the etch characteristics of FePt thin films have been investigated using an inductively coupled plasma reactive ion etcher in various etch chemistries containing $CH_4$/Ar and $CH_4/O_2/Ar$ gas mixes. TiN thin film was employed as a hard mask. FePt thin films are etched by varying the gas concentration. The etch characteristics have been investigated in terms of etch rate, etch selectivity and etch profile. Furthermore, x-ray photoelectron spectroscopy is applied to elucidate the etch mechanism of FePt thin films in $CH_4$/Ar and $CH_4/O_2/Ar$ chemistries.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.54-58
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• 2002

The present paper is to investigate the phase stability and soft magnetic properties of amorphous CoNbZr films when Pd is added as a substitution for CoNbZr alloys. The films were prepared by a RF magnetron sputtering method. The CoNbZrPd films deposited on Si wafers exhibited amorphous structures being independent upon the amount of Pd added in the films. On the addition of 4.34% Pd, the excellent soft magnetic characteristics of the films were observed with a coercive force of 0.54 Oe and an anisotropy field of 11 Oe, whereas a coercive force of 1 Oe and an anisotropy field of 3.5 Oe were shown in the film without the addition of Pd. The increased anisotropy field and low coercive force of the films may be attributed to the occupancy of Pd in the preferred sites parallel to the external magnetic field applied on the deposition process. A permeability of about 1100 was kept constant in the operation frequency ranging up to 100 MHz, which can be explained by the Landau-Lifshitz formula.

• Applied Science and Convergence Technology
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• v.23 no.3
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• pp.128-133
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• 2014

We study the ballistic spin transport properties in a two-dimensional electron gas system in the presence of magnetic barriers using a transfer matrix method. We concentrate on the size-effect of the magnetic barriers parallel to a two-dimensional electron gas plane. We calculate the transmission probability of the ballistic spin transport in the magnetic barrier structure while varying the width of the magnetic barriers. It is shown that resonant tunneling oscillation is affected by the width and height of the magnetic barriers sensitively as well as by the inter-spacing of the barriers. We also consider the effect of additional electrostatic modulation on the top of the magnetic barriers, which could enhance the current spin polarization. Because all-semiconductor-based devices are free from the resistance mismatch problem, a resonant tunneling structure using the two-dimensional electron gas system with electric-magnetic modulation would play an important role in future spintronics applications. From the results here, we provide information on the physical parameters of a device to produce well-defined spin-polarized current.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.185.2-185.2
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• 2007

• 한국전자현미경학회:학술대회논문집
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• 2004.11a
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• pp.66-71
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• 2004

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.51.1-51.1
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• 2008

• 월간산업보건
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• s.368
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• pp.16-16
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• 2018

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.20 no.12
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• pp.1128-1138
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• 2010

One of the typical problems in the precise vibration is resonance characteristics at low frequency disturbance due to a heavy mass. An electro-magnetic(EM) air spring is a kind of vibration control unit and active isolator. The EM air spring in this study aims at removing the low frequency resonance for semiconductor manufacturing. The mechanical and electronic parts in the active isolator are designed to operate under a weight of 2.5 tons. The EM spring is floated using air pressure in a pneumatic elastic chamber and actuated by EM levitation force. The actuator consists of a EM coil and a permanent magnetic plate which are installed inside of the chamber. An air mount was constructed for the experiment with a stone surface plate, 4 active air springs, 4 gap sensors, a DSP controller, and a multi-channel power amp. A PD control method and operating logic was applied to the DSP. Simulation using 1/4 model was carried out and compared with the experiments. The time duration and maximum peak at resonance frequency can be reduced sharply by the proposed system. The results show that the active system can avoid the resonance caused by the natural frequency of the passive system.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.387-387
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• 2013

Currently, the flash memory and the dynamic random access memory (DRAM) have been used in a variety of applications. However, the downsizing of devices and the increasing density of recording medias are now in progress. So there are many demands for development of new semiconductor memory for next generation. Magnetic random access memory (MRAM) is one of the prospective semiconductor memories with excellent features including non-volatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM is composed of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack consists of various magnetic materials, metals, and a tunneling barrier layer. Recently, MgO thin films have attracted a great attention as the prominent candidates for a tunneling barrier layer in the MTJ stack instead of the conventional Al2O3 films, because it has low Gibbs energy, low dielectric constant and high tunneling magnetoresistance value. For the successful etching of high density MRAM, the etching characteristics of MgO thin films as a tunneling barrier layer should be developed. In this study, the etch characteristics of MgO thin films have been investigated in various gas mixes using an inductively coupled plasma reactive ion etching (ICPRIE). The Cl2/Ar, CH3OH/Ar, and CH4/Ar gas mix were employed to find an optimized etching gas for MgO thin film etching. TiN thin films were employed as a hard mask to increase the etch selectivity. The etch rates were obtained using surface profilometer and etch profiles were observed by using the field emission scanning electron microscopy (FESEM).

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.415-418
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• 2005

In the semiconductor and optical industry, a new transport system which can replace the conventional transport systems is required. The transport systems are driven by the magnetic field and conveyer belts. The magnetic field may damage semiconductor and the contact force may scratch the optical lens. The ultrasonic wave driven system can solve these problems. In this semiconductor and optical industry, the non-contact system is required fur reducing the damages. The ultrasonic transportation is the solution of the problem. In this paper, the ultrasonic levitation system fur levitating object are proposed. The 3D vibration profiles of the beam are measured by Laser scanning Vibrometer fur verifying the vibration characteristics of the system and the amplitudes of the beam and the levitation heights of object are measured for evaluating the performance.