• Title/Summary/Keyword: magnetic semiconductor

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Crystallization and Magnetic Properties of Iron Doped La-Ba-Mn-O (Fe이 치환된 LaBaMnO계 산화물의 중성자 회절 및 Messbauer분광학연구)

  • Choi, Kang-Ryong;Kim, Sam-Jin;Shim, In-Bo;Kim, Chul-Sung
    • Journal of the Korean Magnetics Society
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    • v.14 no.1
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    • pp.38-44
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    • 2004
  • The iron doped colossal magnetoresistance materials with La-Ba-Mn-O perovskites structure have been synthesized by chemical reaction of sol-gel methods. Their crystallographic and magnetic properties have been studied with x-ray diffraction, VSM, RBS, Mossbauer spectroscopy, and magnetoresistance measurements. The crystal structure of the La$\_$0.67/Ba$\_$0.33/Mn$\_$0.99/Fe$\_$0.01/ $O_3$ at room temperature was determined to be orthorhombic of Pnma. The lattice parameters a$\_$0/ and c$\_$0/ increased gradually, but b$\_$0/ deceased with increase of iron substitution. The magnetization and coercivity deceased, also the Curie temperature decreased from 360 K as x increased from 0.00 to 0.05. Magnetoresistence measurements were carried out, and the maximum MR ($\Delta$$\rho$/$\rho$(0)) was observed at 281 K, about 9.5 % in 10 kOe. The temperature of maximum resistance (R$\_$MAX/) decreased with increasing substitution of Fe ions and a semiconductor-metal transition temperature (T$\_$SC-M/) decreased too. This phenomena show that ferromagnetic transition temperature decreased by substituting Fe for Mn ions, it decreases double exchange interaction. This result accords with magnetic structure of neutron diffraction. Mossbauer spectra of La$\_$0.67/Ba$\_$0.33/Mn$\_$0.99/Fe$\_$0.01/ $O_3$were taken at various temperatures ranging from 15 to 350 K. With lowering temperature of the sample, two magnetic phases were increased and finally it showed the two sharp sextets of spectra at 15 K. The isomer shift at all temperature range is about 0.3 mm/s relative to Fe metal, which means that both Fe ions are Fe$\^$3+/ states.Fe$\^$3+/ states.

New Approaches for Overcoming Current Issues of Plasma Sputtering Process During Organic-electronics Device Fabrication: Plasma Damage Free and Room Temperature Process for High Quality Metal Oxide Thin Film

  • Hong, Mun-Pyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.100-101
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    • 2012
  • The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

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Growth of Zn0.4Fe2.6O4 Thin Films using Pulsed Laser Deposition and their Crystal Structural and Magnetic Properties (Pulsed Laser Deposition을 이용한 Zn0.4Fe2.6O4 박막의 합성과 그 결정성 및 자기적 특성의 연구)

  • Jang, A.N.;Song, J.H.;Park, C.Y.
    • Journal of the Korean Magnetics Society
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    • v.21 no.3
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    • pp.88-92
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    • 2011
  • We grew $Zn_{0.4}Fe_{2.6}O_4$ thin films using Pulsed Laser Deposition and studied their crystal structure and magnetical characteristics as a function of growth temperature ($T_g$). For the film with $T_g=300^{\circ}C$, X-ray reflections from ${\alpha}-Fe_2O_3$ and ZnO were observed. However, when $T_g$ was increased from 300 to $500^{\circ}C$, crystal structure of inverse spinel was stabilized with the crystal orientation of $Zn_{0.4}Fe_{2.6}O_4(111)/Al_2O_3(0001)$ without any detection of ${\alpha}-Fe_2O_3$ and ZnO phases. The surface morphology shows flattening behavior with increasing $T_g$ from 300 to $500^{\circ}C$. These observations indicate that Zn is substituted into tetrahedron A-site of the inverse-spinel $Fe_3O_4$. M-H curves exhibit clear ferromagnetism for the sample with $T_g=500^{\circ}C$ whereas no ferromagnetism is observed for the film with $T_g=300^{\circ}C$.

Evaluation of Adhesive Strength for Nano-Structured Thin Film by Scanning Acoustic Microscope (초음파 현미경을 이용한 나노 박막의 접합 강도 평가)

  • Park, Tae-Sung;Kwak, Dong-Ryul;Park, Ik-Keun;Miyasaka, Chiaki
    • Journal of the Korean Society for Nondestructive Testing
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    • v.32 no.4
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    • pp.393-400
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    • 2012
  • In recent years, nano-structured thin film systems are often applied in industries such as MEMS/NEMS device, optical coating, semiconductor or like this. Thin films are used for many and varied purpose to provide resistance to abrasion, erosion, corrosion, or high temperature oxidation and also to provide special magnetic or dielectric properties. Quite a number of articles to evaluate the characterization of thin film structure such as film density, film grain size, film elastic properties, and film/substrate interface condition were reported. Among them, the evaluation of film adhesive to substrate has been of great interest. In this study, we fabricated the polymeric thin film system with different adhesive conditions to evaluate the adhesive condition of the thin film. The nano-structured thin film system was fabricated by spin coating method. And then V(z) curve technique was applied to evaluate adhesive condition of the interface by measuring the surface acoustic wave(SAW) velocity by scanning acoustic microscope(SAM). Furthermore, a nano-scratch technique was applied to the systems to obtain correlations between the velocity of the SAW propagating within the system including the interface and the shear adhesive force. The results show a good correlation between the SAW velocities measured by acoustic spectroscope and the critical load measured by the nano-scratch test. Consequently, V(z) curve method showed potentials for characterizing the adhesive conditions at the interface by acoustic microscope.

Formation and Characteristics of the Fluorocarbonated SiOF Film by $O_2$/FTES-Helicon Plasma CVD Method

  • Kyoung-Suk Oh;Min-Sung Kang;Chi-Kyu Choi;Seok-Min Yun
    • Proceedings of the Korean Vacuum Society Conference
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    • 1998.02a
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    • pp.77-77
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    • 1998
  • Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.

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Crystal Structure and Electrical Transport Characteristics of ${La_{1-x}}{Sr_x}{MnO_{3-{\delta}}}$(0.19$\leq$x$\leq$0.31) Thin Films (${La_{1-x}}{Sr_x}{MnO_{3-{\delta}}}$(0.19$\leq$x$\leq$0.31) 박막의 결정구조 및 전기전도 특성)

  • Heo, H.;Lim, S.J.;Cho, N-H.
    • Korean Journal of Materials Research
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    • v.10 no.6
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    • pp.437-444
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    • 2000
  • We investigated the effect of substrate temperature, chemical composition and post-deposition heat-treatment on the crystal structure and electrical transport of $La_{1-x}Sr_xMnO_{3-{\delta}}$(0.19${\leq}x{\leq}$0.31) thin films. As-prepared $La_{1-x}Sr_xMnO_{3-{\delta}}$ films grown at $500^{\circ}C$ by sputter techniques were found to have the pseudo-tetragonal system(a/c=0.97) and a highly preferential <001> orientation. The films were changed to be of the cubic system by post-deposition annealing at around $900^{\circ}C$. A main target of $La_{0.67}Sr_{0.33}MnO_3$ as well as auxliary targets of $La_{0.3}Sr_{0.7}MnO_3$ ceramics were co-sputtered to control the chemical composition of the film. The Sr content(x) of the film ranged from 0.19 to 0.31, depending on the number of the auxiliary target. When x increased from 0.19 to 0.31, the electrical resistivity of the film decreased and the transition temperature between metal and semiconductor shifted to higher temperature. With a magnetic field of 0.18 T, the magneto-resistance ratio (MR(%) = (${\rho}_o-{\rho}_H/{\rho}_H$) of the $La_{0.69}Sr_{0.31}MnO_3$ thin film was about 390%.

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A topological metal at the surface of an ultrathin BiSb alloy film

  • Hirahara, T.;Sakamoto, Y.;Saisyu, Y.;Miyazaki, H.;Kimura, S.;Okuda, T.;Matsuda, I.;Murakami, S.;Hasegawa, S.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.14-15
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    • 2010
  • Recently there has been growing interest in topological insulators or the quantum spin Hall (QSH) phase, which are insulating materials with bulk band gaps but have metallic edge states that are formed topologically and robust against any non-magnetic impurity [1]. In a three-dimensional material, the two-dimensional surface states correspond to the edge states (topological metal) and their intriguing nature in terms of electronic and spin structures have been experimentally observed in bulk Bi1-xSbx single crystals [2,3,4]. However, if we want to know the transport properties of these topological metals, high purity samples as well as very low temperature will be needed because of the contribution from bulk states or impurity effects. In a recent report, it was also shown that an intriguing coupling between the surface and bulk states will occur [5]. A simple solution to this bothersome problem is to prepare a topological metal on an ultrathin film, in which the surface-to-bulk ratio is drastically increased. Therefore in the present study, we have investigated if there is a method to make an ultrathin Bi1-xSbx film on a semiconductor substrate. From reflection high-energy electron diffraction observation, it was found that single crystal Bi1-xSbx films (0${\sim}30\;{\AA}A$ can be prepared on Si(111)-$7{\times}7$. The transport properties of such films were characterized by in situ monolithic micro four-point probes [6]. The temperature dependence of the resistivity for the x=0.1 samples was insulating when the film thickness was $240\;{\AA}A$. However, it became metallic as the thickness was reduced down to $30\;{\AA}A$, indicating surface-state dominant electrical conduction. Figure 1 shows the Fermi surface of $40\;{\AA}A$ thick Bi0.92Sb0.08 (a) and Bi0.84Sb0.16 (b) films mapped by angle-resolved photoemission spectroscopy. The basic features of the electronic structure of these surface states were shown to be the same as those found on bulk surfaces, meaning that topological metals can be prepared at the surface of an ultrathin film. The details will be given in the presentation.

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Development of analytical method for the isotope purity of pure D2 gas using high-precision magnetic sector mass spectrometer

  • Chang, Jinwoo;Lee, Jin Bok;Kim, Jin Seog;Lee, Jin-Hong;Hong, Kiryong
    • Analytical Science and Technology
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    • v.35 no.5
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    • pp.205-211
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    • 2022
  • Deuterium (D) is an isotope with one more neutron number than hydrogen (H). Heavy elements rarely change their chemical properties with little effect even if the number of neutrons increases, but low-mass elements change their vibration energy, diffusion rate, and reaction rate because the effect cannot be ignored, which is called an isotope effect. Recently, in the semiconductor and display industries, there is a trend to replace hydrogen gas (H2) with deuterium gas (D2) in order to improve process stability and product quality by using the isotope effect. In addition, as the demand for D2 in industries increases, domestic gas producers are making efforts to produce and supply D2 on their own. In the case of high purity D2, most of them are produced by electrolysis of heavy water (D2O), and among D2, hydrogen deuteride (HD) molecules are present as isotope impurities. Therefore, in order to maximize the isotope effect of hydrogen in the electronic industry, HD, which is an isotope impurity of D2 used in the process, should be small amount. To this end, purity analysis of D2 for industrial processing is essential. In this study, HD quantitative analysis of D2 for high purity D2 purity analysis was established and hydrogen isotope RM (Reference material) was developed. Since hydrogen isotopes are difficult to analyze with general gas analysis instrument, they were analyzed using a high-precision mass spectrometer (Gas/MS, Finnigan MAT271). High purity HD gas was injected into Gas/MS, sensitivity was determined by a signal according to pressure, and HD concentrations in two bottles of D2 were quantified using the corresponding sensitivity. The amount fraction of HD in each D2 was (4518 ± 275) μmol/mol, (2282 ± 144) μmol/mol. D2, which quantifies HD amount using the developed quantitative analysis method, will be manufactured with hydrogen isotope RM and distributed for quality management and maintenance of electronic industries and gas producers in the future.

Comparative analysis on darcy-forchheimer flow of 3-D MHD hybrid nanofluid (MoS2-Fe3O4/H2O) incorporating melting heat and mass transfer over a rotating disk with dufour and soret effects

  • A.M. Abd-Alla;Esraa N. Thabet;S.M.M.El-Kabeir;H. A. Hosham;Shimaa E. Waheed
    • Advances in nano research
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    • v.16 no.4
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    • pp.325-340
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    • 2024
  • There are several novel uses for dispersing many nanoparticles into a conventional fluid, including dynamic sealing, damping, heat dissipation, microfluidics, and more. Therefore, melting heat and mass transfer characteristics of a 3-D MHD Hybrid Nanofluid flow over a rotating disc with presenting dufour and soret effects are assessed numerically in this study. In this instance, we investigated both ferric sulfate and molybdenum disulfide as nanoparticles suspended within base fluid water. The governing partial differential equations are transformed into linked higher-order non-linear ordinary differential equations by the local similarity transformation. The collection of these deduced equations is then resolved using a Chebyshev spectral collocation-based algorithm built into the Mathematica software. To demonstrate how different instances of hybrid/ nanofluid are impacted by changes in temperature, velocity, and the distribution of nanoparticle concentration, examples of graphical and numerical data are given. For many values of the material parameters, the computational findings are shown. Simulations conducted for different physical parameters in the model show that adding hybrid nanoparticle to the fluid mixture increases heat transfer in comparison to simple nanofluids. It has been identified that hybrid nanoparticles, as opposed to single-type nanoparticles, need to be taken into consideration to create an effective thermal system. Furthermore, porosity lowers the velocities of simple and hybrid nanofluids in both cases. Additionally, results show that the drag force from skin friction causes the nanoparticle fluid to travel more slowly than the hybrid nanoparticle fluid. The findings also demonstrate that suction factors like magnetic and porosity parameters, as well as nanoparticles, raise the skin friction coefficient. Furthermore, It indicates that the outcomes from different flow scenarios correlate and are in strong agreement with the findings from the published literature. Bar chart depictions are altered by changes in flow rates. Moreover, the results confirm doctors' views to prescribe hybrid nanoparticle and particle nanoparticle contents for achalasia patients and also those who suffer from esophageal stricture and tumors. The results of this study can also be applied to the energy generated by the melting disc surface, which has a variety of industrial uses. These include, but are not limited to, the preparation of semiconductor materials, the solidification of magma, the melting of permafrost, and the refreezing of frozen land.