• Applied Science and Convergence Technology
• /
• v.24 no.5
• /
• pp.156-161
• /
• 2015

Application of magnetic fields is important to characterize the carrier dynamics in semiconductor quantum structures. We performed photoluminescence (PL) measurements from an InGaP-AlInGaP single quantum well under pulsed magnetic fields to 50 T. The zero field interband PL transition energy matches well with the self-consistent Poisson-$Schr{\ddot{o}}dinger$ equation. We attempted to analyze the dimensionality of the quantum well by using the diamagnetic shift of the magnetoexciton. The real quantum well has finite thickness that causes the quasi-two-dimensional behavior of the exciton diamagnetic shift. The PL intensity diminishes with increasing magnetic field because of the exciton motion in the presence of magnetic field.

• Journal of Korean Society of Occupational and Environmental Hygiene
• /
• v.22 no.1
• /
• pp.42-51
• /
• 2012

Objectives: To compare the exposure level of extremely low frequency (ELF) magnetic fields among semiconductor workers, shipyard welders and office workers. Methods: To measure the ELF magnetic field concentration, EMDEX LITE (Enertech, USA) were used and monitored for eight hours continuously. Five companies handling the electric and magnetic field (EMF) source were investigated, which the exposure groups were classified into three groups: semiconductor workers, welders, and office workers. Welder group was chosen as a high exposed group and office group as a low exposed group. Results: The arithmetic mean (${\pm}SD$) and geometric mean (GSD) of personal exposure level of semiconductor workers were 0.73 (${\pm}1.33$) ${\mu}T$, 0.43 (2.88) ${\mu}T$, respectively. The ceiling value ranged between 0.18 and 123.2 ${\mu}T$. Welders were exposed high with the arithmetic mean value of 3.46 (${\pm}\;13.46$) ${\mu}T$ and geometric mean value of 0.45 (4.70) ${\mu}T$, respectively, and ceiling value range of 75.5~129.6 ${\mu}T$. The exposure levels of office workers were low compared to other exposed groups; the arithmetic mean 0.05 (${\pm}0.13$) ${\mu}T$, geometric mean 0.03 (2.38) ${\mu}T$ and ceiling value range 0.37~3.35 ${\mu}T$. This study revealed statistically significant differences of the mean ELF magnetic field exposure doses among three groups (p < 0.01). Conclusions: The average ELF magnetic field exposure doses of semiconductor workers were much higher than those of office workers in control group, but were lower than those of welders in high exposure group.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
• /
• 2007.11a
• /
• pp.1241-1246
• /
• 2007

In recent years, the semiconductor industry and the optical industry are developed rapidly. The recent demands have expanded for optical components such as the optical lens, the optical semiconductor and the measuring instrument. Object transport systems are driven typically by the magnetic field and the conveyer belt. Recent industry requires more faster and efficient transport system. However, conventional transport systems are not adequate for transportation of optical elements and semiconductors. The conveyor belts can damage precision optical elements by the contact force and magnetic systems can destroy the inner structure of semiconductor by the magnetic field. In this paper, the levitation transport system using ultrasonic wave is developed for transporting precision elements without damages. The steady state flexural vibration of the beam is expressed using Euler-Bernoulli beam theory. The transport direction of an object is examined according to phase difference and frequency. The theoretical results are verified by experiments.

• Journal of the Semiconductor & Display Technology
• /
• v.14 no.2
• /
• pp.35-40
• /
• 2015

This paper presents the sensorless position control of the Permanent Magnet Synchronous Motor (PMSM) using stator flux estimation and Phase Lock Loop (PLL). The field current and the torque current are required in order to perform the vector control of the PMSM. At this time, it is necessary for the torque to know the exact position of the magnetic flux generated by the permanent magnet, because the torque must be applied torque current in the direction orthogonal to the permanent magnet. In general the speed of the PMSM is controlled by using a magnetic position sensor. However, this paper, we estimates the stator flux by using the PLL method without the magnetic position sensor. This method is simple and easy, in addition it has the advantage of a stabile estimation of the rotor. Finally the proposed algorithm was confirmed by experimental results and showed the good performance.

• Journal of the Semiconductor & Display Technology
• /
• v.22 no.1
• /
• pp.118-123
• /
• 2023

Partially magnetized capacitively coupled plasma (CCP) sources are investigated using a two-dimensional kinetic simulation code named EDIPIC-2D. A converging numerical solution was obtained for CCP with a 60 MHz power source, while properly capturing the dynamics of electrons and power absorption over a single RF period. The effects of magnetic fields with different orientations were evaluated. Axial magnetic fields caused changes in the spatial distribution of plasma density, affecting the loss channel. Transverse magnetic fields enhanced stochastic heating near the powered electrode, leading to an increase in plasma density while the significant E×B drift loss compensated for this rise.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2007.05a
• /
• pp.202.2-202.2
• /
• 2007

• Proceedings of the Korean Magnestics Society Conference
• /
• 2011.06a
• /
• pp.91-92
• /
• 2011

• Proceedings of the Korean Magnestics Society Conference
• /
• 2011.06a
• /
• pp.90-90
• /
• 2011

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.03a
• /
• pp.19-19
• /
• 2003

The injection of spins into nonmagnetic semiconductors has recently attracted great interest due to the potential to create new classes of spin-dependent electronic devices. A recent strategy to achieve control over the spin degree of freedom is based on dilute ferromagnetic semiconductors. Ferromagnetism has been reported in various semiconductor groups including II-Ⅵ, III-V, IV and II-IV,-V$_2$, which will be reviewed. On the other hand, to date the low solubility of magnetic ions in non-magnetic semiconductor hosts and/or low Curie temperature have limited the opportunities. Therefore the search for other promising ferromagnetic semiconducting materials, with high magnetic moments and high Curie temperatures (Tc), is of the utmost importance. In this talk, we also introduce new pure ferromagnetic semiconductors, MnGeP$_2$ and MnGeAs$_2$, exhibiting ferromagnetism and a magnetic moment per Mn at 5K larger than 2.40 ${\mu}$B. The calculated electronic structures using the FLAPW method show an indirect energy gap of 0.24 and 0.06 eV, respectively. We have observed spin injection in MnGeP$_2$ and MnGeAs$_2$ magnetic tunnel junctions through semiconducting barriers.

• Proceedings of the KIPE Conference
• /
• 1998.10a
• /
• pp.859-864
• /
• 1998

Compact and small size, reliable and failsafe operation and low cost featuring fault current limiter causing the designer to take a close look into the use of passive fault current limiter(FCL) for the protection of power semiconductor devices in power electronic systems. This paper has identified the main parameters responsible for the development of ideal passive magnetic current limiter. The effect of those parameters on the range of operation and the voltage-current characteristics of the magnetic current limiter has been studied using tableau approach. Desirable characteristics are discussed and the simulation results are presented.