[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.5757/ASCT.2015.24.5.156

Diamagnetic Shift of a InGaP-AlInGaP Semiconductor Single Quantum Well under Pulsed-magnetic Fields

Choi, B.K. (Department of Applied Physics and Institute of Nanosensor and Biotechnology, Dankook University)
Kim, Yongmin (Korea Institute of Science and Technology)
Song, J.D. (Department of Applied Physics and Institute of Nanosensor and Biotechnology, Dankook University)

Publication Information

Applied Science and Convergence Technology / v.24, no.5, 2015 , pp. 156-161 More about this Journal

Abstract

Application of magnetic fields is important to characterize the carrier dynamics in semiconductor quantum structures. We performed photoluminescence (PL) measurements from an InGaP-AlInGaP single quantum well under pulsed magnetic fields to 50 T. The zero field interband PL transition energy matches well with the self-consistent Poisson- $Schr{\ddot{o}}dinger$ equation. We attempted to analyze the dimensionality of the quantum well by using the diamagnetic shift of the magnetoexciton. The real quantum well has finite thickness that causes the quasi-two-dimensional behavior of the exciton diamagnetic shift. The PL intensity diminishes with increasing magnetic field because of the exciton motion in the presence of magnetic field.

Keywords

Photoluminescence; Magnetic field; Quantum well; Diamagnetic shift;

Citations & Related Records

Times Cited By KSCI : 2 (Citation Analysis)

Reference
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