• 제목/요약/키워드: magnetic layer

검색결과 943건 처리시간 0.02초

Magneto-Optical Kerr Effect Enhancement Methods for Nanostructures

  • Kim, D.H.;You, Chun-Yeol
    • Journal of Magnetics
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    • 제14권1호
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    • pp.31-35
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    • 2009
  • Herein, the Magneto-Optical Kerr Effect (MOKE) signal enhancement in nanostructures in investigated. It is well known that the MOKE signals of ferromagnetic thin films are enhanced with an additional dielectric layer due to multiple reflections. The MOKE signal is modulated with the additional dielectric layer thickness and is at a maximum when reflectivity is at a minimum. This is not always true in the nanostructures due to the contribution from the non-magnetic substrate portion, especially when substrate reflectivity is minimized and the dependence of the additional dielectric layer thickness for the nanostructure is changed in the case of the continuous thin film. We showed that the MOKE signal for nanostructures could be enhanced with a properly designed, dielectric layer in addition to the anti-reflection coated substrates.

PCB 기판에 내장된 마이크로 플럭스게이트 센서 (Embedded Micro Fluxgate Sensor in Printed Circuit Board (PCB))

  • 최원열;황준식;강명삼;최상언
    • 한국전기전자재료학회논문지
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    • 제15권8호
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    • pp.702-707
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    • 2002
  • This paper presents a micro fluxgate sensor in printed circuit board (PCB). The fluxgate sensor consists of five PCB stack layers including one layer magnetic core and four layers of excitation and pick-up coils. The center layer as a magnetic core is made of a micro patterned amorphous magnetic ribbon and the core has a rectangular-ring shape. The amorphous magnetic core is easily saturated due to the low coercive field and closed magnetic path for the excitation field. Four outer layers as an excitation and pick-up coils have a planar solenoid structure. The chip size of the fabricated sensing element is 7.3$\times$5.7$\textrm{mm}^2$. Excellent linear response over the range of -100$\mu$T to +100$\mu$T is obtained with 540V/T sensitivity at excitation square wave of 3 $V_{p-p}$ and 360kHz. The very low power consumption of ~8mW was measured. This magnetic sensing element, which measures the lower fields than 50$\mu$T, is very useful for various applications such as: portable navigation systems, military research, medical research, and space research.h.

Hall probe를 이용한 비접촉 임계전류 측정 (Non-contact critical current measurement using hall probe)

  • 김호섭;이남진;하동우;백승규;김태형;고락길;하홍수;오상수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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    • pp.7-8
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    • 2009
  • Non-contact critical current measurement apparatus was developed using hall probe which measures the magnetic field distribution across the width of superconducting tape. The hall probe consists of 7 independent hall sensors which lie in a line 600 ${\mu}m$. The difference between maximum and minimum magnetic field in the magnetic filed distribution is a main parameter to determine the critical current. As preliminary research, we calculated the magnetic field intensity at the middle sensor, which is a minimum magnetic field and generated by the circular shielding current modeled by Bean model. We confirmed that there are some parameters that affect on the minimum magnetic field; the distance between superconducting layer and hall sensor, the width of superconducting tape, and the critical current distribution across the width of superconducting tape. Among these parameters, the distance between superconducting layer and hall sensor highly influences on the minimum magnetic field.

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SWR as Tool for Determination of the Surface Magnetic Anisotropy Energy Constant

  • Maksymowicz, L.J.;Lubecka, M.;Jablonski, R.
    • Journal of Magnetics
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    • 제3권4호
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    • pp.105-111
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    • 1998
  • The low energy excitations of spin waves (SWR) in thin films can be used for determination of the surface anisotropy constant and the nonhomogeneities of magnetization in the close-to-surface layer. The dispersion relation in SWR is sensitive on the geometry of experiment. We report on temperature dependence of surface magnetic anisotropy energy constant in magnetic semiconductor thin films of$ CdCr_{2-2x}In_{2x}Se_4$ at spin glass state. Samples were deposited by rf sputtering technique on Corning glass substrate in controlled temperature conditions. Coexistence of the infinite ferromagnetic network (IFN) and finite spin slusters (FSC) in spin glass state (SG) is know phenomena. Some behavior typical for long range magnetic ordering is expected in samples at SG state. The spin wave resonance experiment (microwave spectrometer at X-band) with excited surface modes was applied to describe the energy state of surface spins. We determined the surface magnetic anisotropy energy constant versus temperature using the surface inhomogeneities model of magnetic thin films. It was found that two components contribute to the surface magnetic anisotropy energy. One originates from the exchange interaction term due to the lack of translation symmetry for surface spin as well as from the originates from the exchange interaction term due to the lack of translation symmetry for surface spin as well as from the stray field of the surface roughness. The second one comes from the demagnetizing field of close-to surface layer with grad M. Both term linearly decrease when temperature is increased from 5 to 123 K, but dominant contribution is from the first component.

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NiFe/Cu 계면에 삽입된 Co 층이 NiFe/Cu/Co 스핀밸브 박막의 거대자기저항 특성과 자기이방성에 미치는 영향 (Effects of Ultrathin Co Insertion Layer on Magnetic Anisotropy and GMR Properties of NiFe/Cu/Co Spin Valve Thin Films)

  • 김형준;조권구;주승기
    • 한국자기학회지
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    • 제9권5호
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    • pp.251-255
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    • 1999
  • 4$^{\circ}$기울어진 Si(111) 웨이퍼를 기판으로 사용하여 Cu(50$\AA$) 바닥층 위에 외부 자장의 인가없이 iFe(60$\AA$)/Co(0$\AA$$\leq$x$\AA$$\leq$15$\AA$)/Cu(60$\AA$)/Co(30$\AA$) 스핀밸브 박막을 형성하여, NiFe/Cu 계면에 삽입된 Co 층에 따른 스핀밸브 박막의 거대자기저항 특성의 변화와 NiFe 층의 자기이방성의 변화를 관찰하였다. NiFe/Cu 계면에 극히 얇은 Co층이 삽입됨에 따라, 스핀밸브 박막의 자기저항비는 약 1.5%에서 3.5%로 약 2배이상 증가하였고, NiFe층의 자화용이축이 90$^{\circ}$전이하여 Co(30$\AA$)층의 자화용이축과 같은 방향으로 정렬됨이 관찰되었다. 따라서, 극히 얇은 Co 층이 NiFe/Cu 계면에 삽입된 스핀밸브 박막에서 향상된 각형성(squareness)을 나타내는 자기저항곡선을 관찰할 수 있었으며, 이는 MRAM을 비롯한 디지털 자기저항소자 응용에 적합한 것으로 판단되었다. 또한, NiFe 박막을 동일한 기판과 바닥층에 형성하여, NiFe 박막과 Cu 바닥층이 이루는 계면에 Co 층의 삽입 유무에 따른 XRD 측정을 한 결과, NiFe/Cu 계면에 존재하는 Co층에 상관없이 NiFe 박막은(220) 배향을 타나냈었으며, 이로부터 극히 얇은 Co층의 삽입에 따른 NiFe층의 자기이방성의 변화는 NiFe/Cu 계면에서 NiFe/Co 계면으로 바뀜에 따른 계면 효과에 의한 것으로 사료되었다.

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반응성 스퍼터링에 의해 제조된 Fe-Hf-N 박막의 연자기 특성에 미치는 열처리 영향 (The Effect of Annealing on Soft Magnetic Properties of Ee-Hf-N Thin Films Prepared by Reactive Sputtering)

  • 김경일;김병호;김병국;제해준
    • 한국자기학회지
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    • 제10권4호
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    • pp.165-170
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    • 2000
  • Fe-Hf-N 연자성 박막의 물리적, 자기적 특성에 미치는 열처리 영향에 대하여 고찰하였다. Fe-Hf-N 연자성 박막을 질소분위기에서 열처리 할 경우 표면에 Fe$_2$O$_3$-Fe$_3$O$_4$으로 구성된 산화층이 생성되었고, 이 산화층 아래 Fe-Hf-O-N층이 생성되었다. 열처리 온도의 증가에 따라 Fe$_2$O$_3$-Fe$_3$O$_4$ 산화층과 Fe-Hf-O-N 층의 두께가 증가하였고, Fe$_2$O$_3$-Fe$_3$O$_4$산화층을 제외한 박막의 두께는 열처리전과 같았다. 열처리한 박막에서 표면에 생성된 Fe$_2$O$_3$-Fe$_3$O$_4$산화층의 두께를 제외하고 계산한 박막의 연자기 특성은 열처리 전의 연자기 특성에 비해 약간 떨어지는 것으로 나타났다. 그러므로, Fe-Hf-O-N층은 박막 전체의 연자기 특성을 크게 떨어뜨리지 않으며, 열처리 후 박막 전체의 연자기 특성은 Fe-Hf-O-N과 Fe-Hf-N의 다층막의 연자기 특성을 나타내는 것으로 생각된다.

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고밀도 자기기록매체용 Cr/CoPtCr/$SiO_2$ 다층박막의 자기적 성질 (Magnetic Properties of Cr/CoPtCr/$SiO_2$Thin Films for High Density Magnetic Recording Media)

  • 최훈;홍연기;김종오
    • 한국재료학회지
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    • 제8권6호
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    • pp.560-564
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    • 1998
  • RF magnetron sputtering법으로 Cr을 하지층으로 하여 CoPrCr 자성층을 성막한 후 보호층으로 $SiO_2$를 증착한 Cr/CoPtCr/$SiO_2$ 다층박막을 상온에서 제조하여 자기적 성질을 조사하였다. Cr 하지층 두께가 증가함에 따라 보자력이 증가하다가 거의 일정한 값을 얻었으며 최대 보자력값은 860 Oe였다. 보자력의 증가원인은 자성상의 면내 배향화와 자성 결정립간의 자기적인 분리에 의한다고 생각된다. 시편을 각 온도별로 열처리 함으로써 보자력이 크게 증가하였으며,$ 550^{\circ}C$에서 1시간 열처리한 박막의 보자력은 1650 Oe였다.

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Computer Simulation of Switching Characteristics and Magnetization Flop in Magnetic Tunnel Junctions Exchange Biased by Synthetic Antiferromagnets

  • Lim, S.H.;Uhm, Y.R.
    • Journal of Magnetics
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    • 제6권4호
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    • pp.132-141
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    • 2001
  • The switching characteristics and the magnetization-flop behavior in magnetic tunnel junctions exchange biased by synthetic antiferromagnets (SyAFs) are investigated by using a computer simulations based on a single-domain multilayer model. The bias field acting on the free layer is found to be sensitive to the thickness of neighboring layers, and the thickness dependence of the bias field is greater at smaller cell dimensions due to larger magnetostatic interactions. The resistance to magnetization flop increases with decreasing cell size due to increased shape anisotropy. When the cell dimensions are small and the synthetic antiferromagnet is weakly, or not pinned, the magnetization directions of the two layers sandwiching the insulating layer are aligned antiparallel due to a strong magnetostatic interaction, resulting in an abnormal magneto resistance (MR) change from the high-MR state to zero, irrespective of the direction of the free-layer switching. The threshold field for magnetization-flop is found to increase linearly with increasing antiferromagnetic exchange coupling in the synthetic antiferromagnet. Irrespective of the magnetic parameters and cell sizes, magnetization flop does not exist near zero applied field, indicating that magnetization flop is driven by the Zeeman energy.

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