• Title/Summary/Keyword: magnetic interference

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Mössbauer Studies of Changed Interaction on Cr Ions in Chromite (Chromite 물질의 자기상호작용에 관한 뫼스바우어 분광연구)

  • Choi, Kang-Ryong;Kim, Chul-Sung
    • Journal of the Korean Magnetics Society
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    • v.17 no.1
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    • pp.47-50
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    • 2007
  • [ $ZnCr_2O_4$ ] shows geometrically frustrated magnet. Recently, $CoCr_2O_4$ has been investigated for multiferroic property and dielectric anomalies by spin-current model. Polycrystalline $CoCr_2O_4$ and $CoCrFeO_4$ compounds was prepared by wet-chemical process. Crystallographic and magnetic properties of $CoCr_2O_4$ and $CoCrFeO_4$ were investigate by using the x-ray diffractometer(XRD), vibrating sample magnetometer(VSM), superconducting quantum interference device magnetometer(SQUID), and $M\"{o}ssbauer$ spectroscopy. The crystal structure was found to be single-phase cubic spinel with space group of Fd3m. The lattice constants of $CoCr_2O_4$ and $CoCrFeO_4$ $a_0$ were determined to be 8.340 and 8.377 ${\AA}$, respectively. The ferrimagnetic transition temperature for the both samples were observed at 97 K and 320 K. The $M\"{o}ssbauer$ absorption spectra at 4.2 K show that the well developed two sextets are superposed with small difference of hyperfine field($H_{hf1}=507\;and\;H_{hf2}=492\;kOe$). Isomer shift values($\delta$) of the two sextets are found to be 0.33 and 0.34 mm/s relative to the Fe metal, respectively, which are consistent with the high spin $Fe^{3+}$ charge state.

Quadratic Sigmoid Neural Equalizer (이차 시그모이드 신경망 등화기)

  • Choi, Soo-Yong;Ong, Sung-Hwan;You, Cheol-Woo;Hong, Dae-Sik
    • Journal of the Korean Institute of Telematics and Electronics S
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    • v.36S no.1
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    • pp.123-132
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    • 1999
  • In this paper, a quadratic sigmoid neural equalizer(QSNE) is proposed to improve the performance of conventional neural equalizer in terms of bit error probability by using a quadratic sigmoid function as the activation function of neural networks. Conventional neural equalizers which have been used to compensate for nonlinear distortions adopt the sigmoid function. In the case of sigmoid neural equalizer, each neuron has one linear decision boundary. So many neurons are required when the neural equalizer has to separate complicated structure. But in case of the proposed QSNF and quadratic sigmoid neural decision feedback equalizer(QSNDFE), each neuron separates decision region with two parallel lines. Therefore, QSNE and QSNDFE have better performance and simpler structure than the conventional neural equalizers in terms of bit error probability. When the proposed QSNDFE is applied to communication systems and digital magnetic recording systems, it is an improvement of approximately 1.5dB~8.3dB in signal to moise ratio(SNR) over the conventional decision feedback equalizer(DEF) and neural decision feedback equalizer(NDFE). As intersymbol interference(ISI) and nonlinear distortions become severer, QSNDFE shows astounding SNR shows astounding SNR performance gain over the conventional equalizers in the same bit error probability.

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A DC-DC Converter Design for OLED Display Module (OLED Display Module용 DC-DC 변환기 설계)

  • Lee, Tae-Yeong;Park, Jeong-Hun;Kim, Jeong-Hoon;Kim, Tae-Hoon;Vu, Cao Tuan;Kim, Jeong-Ho;Ban, Hyeong-Jin;Yang, Gweon;Kim, Hyoung-Gon;Ha, Pan-Bong;Kim, Young-Hee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.12 no.3
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    • pp.517-526
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    • 2008
  • A one-chip DC-DC converter circuit for OLED(Organic Light-Emitting Diode) display module of automotive clusters is newly proposed. OLED panel driving voltage circuit, which is a charge-pump type, has improved characteristics in miniaturization, low cost and EMI(Electro-Magnetic Interference) compared with DC-DC converter of PWM(Pulse Width Modulator) type. By using bulk-potential biasing circuit, charge loss due to parasitic PNP BJT formed in charge pumping, is prevented. In addition, the current dissipation in start-up circuit of band-gap reference voltage generator is reduced by 42% and the layout area of ring oscillator is reduced by using a logic voltage VLP in ring oscillator circuit using VDD supply voltage. The driving current of VDD, OLED driving voltage, is over 40mA, which is required in OLED panels. The test chip is being manufactured using $0.25{\mu}m$ high-voltage process and the layout area is $477{\mu}m{\times}653{\mu}m$.