• Journal of the Korean institute of surface engineering
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• v.23 no.3
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• pp.150-159
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• 1990

The magnetic properties of electrodeposited iron and cobalt films on porous aluminum oxide film were examined. There exists perpendicular magnetic anisotropy due to the shape anisotropy. The coercivity and squareness ratio of films were strongly dependent on deposited particle diameter. The effect of packing fraction on squareness ratio was also apprecible. Unlike the iron-deposited films, the magnetic properties of cobalt films were changed by preferred orientation because of it's large crystal ansotropy constant.(about 10 times of Fe) The Fe deposited films were found to be more suitable for perpendicular magenetic recording media bacause perpendicular coercivity, squareness ratio and the ratio of perpendicular coercivity to horizontal ones of iron films are greater than those of cobalt films.

• Korean Journal of Materials Research
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• v.12 no.11
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• pp.880-882
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• 2002

We have prepared magnetic thin films of FeSiB by sputtering and examined microstructure and magnetic properties of the annealed films in order to investigate the feasibility of the films to microsensor application. Effects of vacuum annealing on the magnetic properties of $Fe_{84}$$Si_{6}$$B_{10}$ films have been examined as a function of temperature. The heating rate and the holding time were 10 K/min and 1 hour, respectively. Vacuum condition was held during cooling to prevent oxidation of the films. The coercivity did not show any noticeable change (~1500 A/m), although the grain size of the crystalline phase in the annealed films increased gradually up to about 16 nm until 673 K. However, both the grain size and the coercivity increased steeply when the annealing temperature increased over 723 K. Since the saturation magnetization is closely related to the phase evolution, the variation of the saturation magnetization of the annealed films was similar to that of the ribbon materials; the thin films were transformed from amorphous to crystalline with $\alpha$-(Fe,Si) phase by increasing annealing temperature.

• Journal of Magnetics
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• v.13 no.3
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• pp.92-96
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• 2008

There are few reports of high frequency loss behavior in the near-field for magnetic films with semiconducting properties, even though semiconducting magnetic materials, such as soft magnetic amorphous alloys and nanocrystalline thin films, have been demonstrated. The electromagnetic loss behavior of multilayer magnetic films with semiconducting properties on the microstrip line in quasi-microwave frequency band was analyzed numerically using a commercial finite-element based electromagnetic solver. The large increase in the absorption performance and broadband characteristics of the semiconducting/insulating layer magnetic films examined in this study were attributed to an increase in the loss factor of resistive loss. The electromagnetic reflection increased significantly with increasing conductivity, and the loss power deteriorated significantly. The numerical results of the magnetic field distribution showed that a strong radiated signal on the microstrip line was emitted with increasing conductivity and decreasing film thickness due to re-reflection of the radiated wave from the surface of the magnetic film, even though the emitted levels varied with film thickness.

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.532-538
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• 2000

A double rectangular spiral inductor is fabricated using FeTaN films. The inductor is composed of internal coils sandwiched by magnetic layers. Characteristics of inductor performance are investigated with an emphasis on planarization of magnetic films. In the absence of the planarization process, the grating topology of upper magnetic films over coil arrays degrades the soft magnetic properties and the inductor performance. It also induces a longitudinal magnetic anisotropy with the easy axis aligned to the magnetic flux direction. This alignment prevents the upper magnetic films from contributing to the total induction. Glass bonding is a viable method for achieving a completely planar inductor structure. The planar inductor with glass bonding shows excellent performance : inductance of 1.1 H, Q factor of 7 (at 5 MHz), and the dc current capability up to 100 mA.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.165-169
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• 2001

Carbon nitride films were grown on Si (100) substrate by a laser-electric discharge method with and without a magnetic field assistance. The magnetic field leads to vapor plume plasma expending upon the ambient arc discharge plasma area. Influence of the magnetic field has resulted in increase of a crystallite size in the films due to bombardment (heating) of Si substrates by energetic carbon and nitrogen species generated during cyclotron motion of electrons in the discharge zone. Many crystalline grains were observed in the morphology of the deposited films by scanning electron microscopy. In order to determine the structural crystalline parameters, X-ray diffraction (XRD) was used to analysis the grown films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.2
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• pp.184-189
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• 2002

Carbon nitride films were grown on Si (100) substrate by a laser-electric discharge method with/without a magnetic field assistance. The magnetic field leads to vapor plume plasma expending upon the ambient arc discharge plasma area. Influence of the magnetic field has resulted in increased of a crystallite size int he films due to bombardment (heating) of Si substrates by energetic carbon and nitrogen species generated during cyclotron motion of electrons in the discharge zone. The surface morphology of the films with a deposition time of 2 hours was studied using a scanning electron microscopy (SEM). In order to determine the structural crystalline parameters, X-ray diffraction (XRD) was used to analysis the grown films.

• Journal of the Semiconductor & Display Technology
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• v.15 no.3
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• pp.30-34
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• 2016

We investigated magnetic field, discharged voltage, and as-deposited film uniformity at facing targets sputtering (FTS) system with magnetic field type: i) concentrated and ii) distributed magnetic field type. And Al doped ZnO (AZO) films were prepared at two magnetic field type such as concentrated magnetic field type and distributed magnetic field type, respectively. Discharge voltage at the distribution type is lower than concentration type due to low magnetic flux (middle magnetic flux: Concentration 1200 G and Distribution 600 G). The films deposited at the distributed magnetic field were more uniform than concentration type. All of prepared AZO films had a resistivity of under $10^{-4}[{\Omega}{\cdot}cm]$ and a transmittance of more than 85 % in the visible range.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.824-828
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• 1996

Co-based alloy thin films ddeposited by fcing targets sputtering(FTS) were investigated for use in high-density magnetic recording media to determine how their magnetic properties are dependent on the sputtering conditions, and thus to find appropriate parameters that allow the sputtering and thin films to meet the specificiations for magnetic properties. FTS can discharge at lower working gas pressure than other sputtering methods such as dcmagnetron sputteing because the plasma is sufficiently confined by a magnetic field applied perpendicular to both of the target planes, which results in plasma-free substrates. Co-Cr-Ta films were deposited by FTS on glass and silicon substrates at substrate temperature between room temperature and $350^{\circ}C$, and at argon gas pressure between 0.1 and 10mTorr. The films were also deposited on polyimide tapes at substrate temperature of $130^{\circ}C$ and argon gas pressure of 1 mTorr. The effective advantages of Ta as an additional element were investigated, using the same films on the tapes. As a result of the experiment, it was found that better magnetic properties were obtained in the ranges of higher temperature and lower argon gas pressure with background pressure in thr range of $1.5 \times 10^{-6}$ Torr. Ta addition at 2 to 4 atomic percent almost havled the Co-Cr grain sizes, indicating that Ta addition at an appropriate atomic percent is effective for improving the microstructure and characteristics of Co-Cr films.

• Proceedings of the Korean Magnestics Society Conference
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• 2013.05a
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• pp.18-18
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• 2013

A FeRh alloy is a well-known efficient magnetocaloric material and some experimental and theoretical studies of bulk FeRh have been reported already by several groups. In this study we report first-principles calculations on magnetic properties of different thickness FeRh thin films in order to investigate the possibility to enhance further the magnetocaloric efficiency. We used Vienna Ab-initio Simulation Package (VASP) code. We found that the FeRh thin films have quite different magnetic properties from the bulk when the thickness is thinner than 6-atomic-layers. While bulk FeRh has a G-type antiferromagnetic (AFM) state, thin films which are thinner than 6-atomic-layers have an A-type AFM state or a ferromagnetic(FM) state. We will discuss possibility of magnetic phase transitions of the FeRh thin films in the view point of a magnetocaloric effect. And we found 4-, 5-, 6-layers films with Fe surface and 7-layers film with Rh surface are FM and they have dozens eV magnetocrystalline anisotropy (MCA) energy. MCA energy leads to determine energy barrier when magnetic states are changed by external magnetic field.

• Proceeding of EDISON Challenge
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• 2013.04a
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• pp.294-298
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• 2013

A FeRh alloy is a well-known efficient magnetocaloric material and some experimental and theoretical studies of bulk FeRh have been reported already by several groups. In this study we report first-principles calculations on magnetic properties of different thickness FeRh thin films in order to investigate the possibility to enhance further the magnetocaloric efficiency. We used two methods of a Vienna Ab-initio Simulation Package (VASP) code and SIESTA package. We found that the FeRh thin films have quite different magnetic properties from the bulk when the thickness is thinner than 6-atomic-layers. While bulk FeRh has a G-type antiferromagnetic(AFM) state, thin films which are thinner than 6-atomic-layers have an A-type AFM state or a ferromagnetic (FM) state. We will discuss possibility of magnetic phase transitions of the FeRh thin films in the view point of a magnetocaloric effect. And we found 4-, 5-, 6-layers films with Fe surface and 7-layers film with Rh surface are FM and they have relatively small magnetocrystalline anisotropy (MCA) energy about less than 70 meV. The small MCA energy leads to reduction of the strength of magnetic field in operating a magnetic refrigerator.